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61. 发明授权

US09882153B2 Organic monolayer passivation and silicon heterojunction photovoltaic devices using the same 有权
公开(公告)号：US09882153B2
公开(公告)日：2018-01-30
申请号：US14749956
申请日：2015-06-25
申请人： International Business Machines Corporation
发明人： Ali Afzali-Ardakani , Bahman Hekmatshoartabari , Davood Shahrjerdi
IPC分类号： H01L31/07 , H01L51/42 , H01L51/00 , H01L51/44
CPC分类号： H01L51/4213 , H01L51/0017 , H01L51/005 , H01L51/441 , Y02E10/549
摘要： A method for inorganic surface passivation in a photovoltaic device includes etching a native oxide over an inorganic substrate, the inorganic substrate having a surface; and forming an organic monolayer on the surface of the inorganic substrate to form a heterojunction, the organic monolayer having the following formula: ˜X—Y, wherein X is an oxygen or a sulfur; Y is an alkyl chain, an alkenyl chain, or an alkynyl chain; and X covalently bonds to the surface of the inorganic substrate by a covalent bond.

62. 发明申请

US20170323990A1 SCHOTTKY UV SOLAR CELL 审中-公开
公开(公告)号：US20170323990A1
公开(公告)日：2017-11-09
申请号：US15659150
申请日：2017-07-25
申请人： Hongbin Yu , Sandwip Dey , Xiao Di Sun Zhou , Ebraheem Azhar
发明人： Hongbin Yu , Sandwip Dey , Xiao Di Sun Zhou , Ebraheem Azhar
IPC分类号： H01L31/054 , H01L31/18 , H01L31/073 , G02F1/133 , H01L31/0224 , G02F1/163 , G02F1/153 , H01L31/07
CPC分类号： H01L31/054 , G02F1/13306 , G02F1/15 , G02F1/1533 , G02F1/163 , G02F2001/13324 , H01L31/022491 , H01L31/07 , H01L31/073 , H01L31/1828 , H01L31/1884 , H02S20/26 , Y02B10/10 , Y02E10/52
摘要： Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.

63. 发明申请

US20170162738A9 METALLIC PHOTOVOLTAICS 审中-公开
公开(公告)号：US20170162738A9
公开(公告)日：2017-06-08
申请号：US14550167
申请日：2014-11-21
申请人： Massachusetts Institute of Technology
发明人： Jesse H Mills , Jeremy S. Coombs , Joshua L. Wilson , Mark A. Hollis , Franz Busse , Kenneth Alexander Diest
IPC分类号： H01L31/07 , H01L31/18 , H01L31/054
CPC分类号： H01L31/07 , H01L31/0547 , H01L31/056 , H01L31/0687 , H01L31/18 , Y02E10/52 , Y02E10/544
摘要： According to some aspects, an apparatus for converting electromagnetic radiation into electric power is provided, comprising a first layer comprising a first semiconductor material, an absorber in contact with the first layer, a second layer comprising a second semiconductor material, the second layer being in contact with the absorber, and a reflector to reflect at least a portion of electromagnetic radiation passing through the second layer. According to some aspects, a method of forming an apparatus for converting electromagnetic radiation into electric power is provided, comprising forming a reflector on a substrate, forming a first layer in contact with the reflector, the first layer comprising a first semiconductor material, forming an absorber in contact with the first layer, and forming a second layer in contact with the absorber, the second layer comprising a second semiconductor material.

64. 发明授权

US09502503B2 Nanotube semiconductor devices 有权
公开(公告)号：US09502503B2
公开(公告)日：2016-11-22
申请号：US15097162
申请日：2016-04-12
申请人： Alpha and Omega Semiconductor Incorporated
发明人： Hamza Yilmaz , Xiaobin Wang , Anup Bhalla , John Chen , Hong Chang
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07 , H01L31/108 , H01L29/74 , H01L31/111 , H01L29/08 , H01L29/739 , H01L29/78 , H01L29/872 , H01L29/861 , H01L29/06 , H01L27/06 , H01L29/10 , H01L21/265 , H01L29/40
CPC分类号： H01L29/0886 , H01L21/26586 , H01L27/0623 , H01L27/0629 , H01L27/0664 , H01L29/0615 , H01L29/0619 , H01L29/063 , H01L29/0634 , H01L29/0638 , H01L29/0649 , H01L29/0653 , H01L29/0676 , H01L29/0688 , H01L29/0692 , H01L29/0696 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/36 , H01L29/365 , H01L29/402 , H01L29/404 , H01L29/41741 , H01L29/41775 , H01L29/4236 , H01L29/42368 , H01L29/66136 , H01L29/66143 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7827 , H01L29/861 , H01L29/8613 , H01L29/872 , H01L29/8725
摘要： Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first epitaxial layer and a second epitaxial layer formed on mesas of the semiconductor layer. The thicknesses and doping concentrations of the first and second epitaxial layers and the mesa are selected to achieve charge balance in operation. In another embodiment, the semiconductor body is lightly doped and the thicknesses and doping concentrations of the first and second epitaxial layers are selected to achieve charge balance in operation.

65. 发明授权

US09349796B2 Nanotube semiconductor devices 有权
标题翻译：纳米管半导体器件
公开(公告)号：US09349796B2
公开(公告)日：2016-05-24
申请号：US14965009
申请日：2015-12-10
申请人： Alpha and Omega Semiconductor Incorporated
发明人： Hamza Yilmaz , Xiaobin Wang , Anup Bhalla , John Chen , Hong Chang
IPC分类号： H01L29/74 , H01L31/111 , H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07 , H01L31/108 , H01L29/08 , H01L29/78 , H01L29/06 , H01L29/36 , H01L29/10 , H01L29/417 , H01L29/739 , H01L29/872 , H01L29/861 , H01L29/423
CPC分类号： H01L29/0886 , H01L21/26586 , H01L27/0623 , H01L27/0629 , H01L27/0664 , H01L29/0615 , H01L29/0619 , H01L29/063 , H01L29/0634 , H01L29/0638 , H01L29/0649 , H01L29/0653 , H01L29/0676 , H01L29/0688 , H01L29/0692 , H01L29/0696 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/36 , H01L29/365 , H01L29/402 , H01L29/404 , H01L29/41741 , H01L29/41775 , H01L29/4236 , H01L29/42368 , H01L29/66136 , H01L29/66143 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7827 , H01L29/861 , H01L29/8613 , H01L29/872 , H01L29/8725
摘要： Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first epitaxial layer and a second epitaxial layer formed on mesas of the semiconductor layer. The thicknesses and doping concentrations of the first and second epitaxial layers and the mesa are selected to achieve charge balance in operation. In another embodiment, the semiconductor body is lightly doped and the thicknesses and doping concentrations of the first and second epitaxial layers are selected to achieve charge balance in operation.
摘要翻译：半导体器件包括形成在半导体层中形成的台面的侧壁上的薄外延层（纳米管）。在一个实施例中，半导体器件包括形成在半导体层的台面上的第一外延层和第二外延层。选择第一和第二外延层和台面的厚度和掺杂浓度以在操作中实现电荷平衡。在另一个实施例中，半导体本体被轻掺杂，并且选择第一和第二外延层的厚度和掺杂浓度以在操作中实现电荷平衡。

66. 发明授权

US09336919B2 Methods for preparing colloidal nanocrystal-based thin films 有权
标题翻译：制备胶态纳米晶体薄膜的方法
公开(公告)号：US09336919B2
公开(公告)日：2016-05-10
申请号：US13969863
申请日：2013-08-19
申请人： The Trustees of the University of Pennsylvania
发明人： Cherie R. Kagan , Aaron T. Fafarman , Ji-Hyuk Choi , Weon-kyu Koh , David K. Kim , Soong Ju Oh , Yuming Lai , Sung-Hoon Hong , Sangameshwar Rao Saudari , Christopher B. Murray
IPC分类号： H01B1/06 , B05D1/18 , B82Y10/00 , B82Y40/00 , H01L29/41 , H01L29/786 , H01L31/032 , H01L31/07 , H01L29/06 , H01L29/12 , H01L29/18
CPC分类号： H01L31/07 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01B1/06 , H01L29/0665 , H01L29/127 , H01L29/18 , H01L29/22 , H01L29/2203 , H01L29/24 , H01L29/413 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78603 , H01L29/78681 , H01L31/0324 , H01L31/18 , Y02E10/50 , Y10S977/891 , Y10S977/938 , Y10S977/954
摘要： Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.
摘要翻译：公开了使用硫属化合物（xCN）的配体交换配体以形成胶态纳米晶体（NC）的方法及使用其的装置。可以通过将NCs组装成薄膜并将薄膜浸入含有基于xCN的配体的溶液中来交换配体。可以通过将基于xCN的溶液与NC的分散体混合，将混合物絮凝，离心混合物，弃上清液，向溶液中加入溶剂，并将溶剂和沉淀物分散以形成分散的NC，交换 xCN配体。具有xCN基配体的NC可用于形成薄膜器件和/或其它电子，光电子和光子器件。还公开了包含基于纳米晶体的薄膜的器件以及用于形成这种器件的方法。这些器件可以通过将NC沉积到衬底上以形成NC薄膜而构成，然后通过蒸发和热扩散来掺杂薄膜。

67. 发明申请

US20160013349A1 Photoelectric Conversion Device and Method for Manufacturing Photoelectric Conversion Device 审中-公开
标题翻译：光电转换装置及光电转换装置的制造方法
公开(公告)号：US20160013349A1
公开(公告)日：2016-01-14
申请号：US14772266
申请日：2014-02-28
申请人： Yoriyasu OZAKI
发明人： Yoriyasu Ozaki
IPC分类号： H01L31/07 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/07 , H01L31/0216 , H01L31/03529 , H01L31/055 , H01L31/1864 , Y02E10/52
摘要： A photoelectric conversion device includes a photoelectric conversion part, a first electrode, and a second electrode. The photoelectric conversion part includes a first layer and a second layer. The first and second layers are joined to each other to form a Schottky junction. The first electrode is formed on the first layer. The second electrode is formed on the second layer without electrical contact with the first layer in order to extract photocarriers, which move along an interface of the Schottky junction, in conjunction with the first electrode.
摘要翻译：光电转换装置包括光电转换部分，第一电极和第二电极。光电转换部包括第一层和第二层。第一和第二层彼此连接以形成肖特基结。第一电极形成在第一层上。第二电极形成在第二层上，而不与第一层电接触，以便提取沿着肖特基结的界面与第一电极一起移动的光载流子。

68. 发明授权

US09219184B2 Avalanche photodiodes with defect-assisted silicon absorption regions 有权
标题翻译：具有缺陷辅助硅吸收区的雪崩光电二极管
公开(公告)号：US09219184B2
公开(公告)日：2015-12-22
申请号：US14396419
申请日：2012-07-25
申请人： Zhihong Huang , Charles M. Santori , Marco Fiorentino , Raymond G. Beausoleil
发明人： Zhihong Huang , Charles M. Santori , Marco Fiorentino , Raymond G. Beausoleil
IPC分类号： H01L31/07 , H01L31/107 , H01L31/028 , H01L31/02 , H01L31/0224 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/107 , G02B2006/12061 , H01L31/02027 , H01L31/022416 , H01L31/02325 , H01L31/028 , H01L31/03529 , H01L31/1075 , H01L31/1804 , Y02E10/547
摘要： An avalanche photodiode with a defect-assisted silicon absorption region. An example includes a substrate; a layer of silicon on the substrate, the layer of silicon including a positively-doped region, a negatively-doped region, and an absorption region between the positively-doped and negatively-doped regions, the absorption region including defects in its crystal structure; and contacts in electrical communication with the positively-doped and negatively-doped regions to receive a bias potential.
摘要翻译：具有缺陷辅助硅吸收区域的雪崩光电二极管。一个例子包括基底; 衬底上的硅层，包含正掺杂区域的硅层，负掺杂区域和正掺杂区域和负掺杂区域之间的吸收区域，所述吸收区域包括其晶体结构的缺陷; 以及与正掺杂区域和负掺杂区域电连通的接触以接收偏置电位。

69. 发明授权

US09196780B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US09196780B2
公开(公告)日：2015-11-24
申请号：US14582505
申请日：2014-12-24
申请人： SANYO Electric Co., Ltd.
发明人： Yutaka Kirihata , Masato Nakasu , Naoya Sotani
IPC分类号： H01L31/07 , H01L31/075 , H01L31/0352 , H01L31/068 , H01L31/0747 , H01L31/18
CPC分类号： H01L31/075 , H01L31/03529 , H01L31/0682 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type.
摘要翻译：公开了一种太阳能电池，其包括由半导体材料制成的衬底，位于衬底的一个区域上并具有一种导电型的第一非晶半导体层，放置在衬底的另一区域上的第二非晶半导体层导电类型，设置在第一非晶半导体层上方的基本上本征的i型非晶半导体层，设置在i型非晶半导体层上并具有另一种导电类型的第三非晶半导体层，位于第一非晶半导体层之间的第一晶体半导体层第一非晶半导体层和i型非晶半导体层，并且是一种导电类型，以及第二晶体半导体层，设置在第一晶体半导体层和i型非晶半导体层之间，并且是另一导电类型。

70. 发明授权

US09105787B2 Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures 有权
标题翻译：使用高纵横比纳米结构提高光伏器件效率的技术
公开(公告)号：US09105787B2
公开(公告)日：2015-08-11
申请号：US14020253
申请日：2013-09-06
申请人： International Business Machines Corporation
发明人： Supratik Guha , Oki Gunawan
IPC分类号： H01L31/0232 , H01L31/07 , H01L31/0224 , H01L31/0352 , H01L31/18 , H01L31/0256
CPC分类号： H01L31/07 , H01L31/022425 , H01L31/02327 , H01L31/0256 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.
摘要翻译：提供了用于提高效率的光伏器件和技术。一方面，提供一种光电器件。光电器件包括具有光活性层和与光活性层相邻的非光活性层的光电池，以便在光敏层和非光活性层之间形成异质结; 以及在光活性层的一个或多个表面上的多个高纵横比纳米结构。多个高纵横比纳米结构被配置为用作入射光的散射介质。多个高纵横比纳米结构也可以被配置为在入射光中产生光学共振效应。

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