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    • 66. 发明申请
    • Mesoporous Single Crystal Semiconductors
    • 介孔单晶半导体
    • US20150034150A1
    • 2015-02-05
    • US14383070
    • 2013-03-01
    • Isis Innovation Limited
    • Henry James SnaithEdward James Crossland
    • C30B7/10C30B7/14H01L21/02C30B29/22C30B29/46H01G9/20C30B29/16
    • C30B7/10C30B7/00C30B7/14C30B29/16C30B29/22C30B29/46C30B29/60C30B33/02H01G9/2031H01L21/02422H01L21/02428H01L21/02521H01L21/02565H01L21/0259H01L21/02595H01L21/02628H01L31/032H01L31/0322H01L31/0326H01L31/18H01L51/4226Y02E10/541Y02E10/549Y02P70/521Y10T428/2982
    • The invention provides a process for producing a mesoporous single crystal of a semiconductor, wherein the shortest external dimension of said single crystal, measured along any of the crystallographic principal axes of said single crystal, is x, wherein x is equal to or greater than 50 nm, which process comprises growing a single crystal of a semiconductor within a mesoporous template material until said shortest external dimension of the single crystal is equal to or greater than x. Further provided is a mesoporous single crystal obtainable by the process of the invention. The invention also provides a mesoporous single crystal of a semiconductor, wherein the shortest external dimension of said single crystal measured along any of the principal axes of said single crystal is equal to or greater than 50 nm. Further provided is a composition comprising a plurality of mesoporous single crystals of the invention. The invention also provides a semiconducting layer of a mesoporous single crystal of the invention. Further provided is a semiconducting device comprising one or more mesoporous single crystals of the invention. The device may for instance be a photovoltaic device, a photodiode, a solar cell, a photo detector, a light-sensitive transistor, a phototransistor, a solid-state triode, a battery electrode, a light-emitting device or a light-emitting diode. The invention also provides the use of a mesoporous single crystal of the invention as a semiconducting material in a semiconducting device.
    • 本发明提供一种制造半导体的介孔单晶的方法,其中所述单晶的最短外部尺寸是沿着所述单晶的任何结晶主轴测得的,其中x等于或大于50 nm,该方法包括在介孔模板材料中生长半导体的单晶,直到单晶的最短外部尺寸等于或大于x。 还提供了可通过本发明的方法获得的介孔单晶。 本发明还提供一种半导体的介孔单晶,其中沿着所述单晶的任何主轴测量的所述单晶的最短外形尺寸等于或大于50nm。 还提供了包含本发明的多个介孔单晶的组合物。 本发明还提供本发明的介孔单晶的半导体层。 还提供了包含本发明的一种或多种介孔单晶的半导体器件。 该装置可以例如是光电器件,光电二极管,太阳能电池,光电检测器,感光晶体管,光电晶体管,固态三极管,电池电极,发光器件或发光 二极管。 本发明还提供本发明的介孔单晶作为半导体器件中的半导体材料的用途。
    • 68. 发明授权
    • Colloidal nanocrystal ensembles with narrow linewidth band gap photoluminescence and methods of synthesizing colloidal semiconductor nanocrystals
    • 具有窄线宽带隙光致发光的胶体纳米晶体集合和合成胶体半导体纳米晶体的方法
    • US08932489B2
    • 2015-01-13
    • US13058239
    • 2009-08-11
    • Kui YuJianying Ouyang
    • Kui YuJianying Ouyang
    • C09K11/02C09K11/08C09K11/70C09K11/77C09K11/56C09K11/54C30B29/46C30B29/48C30B7/14B82Y30/00
    • C09K11/883B82Y30/00C09K11/565C09K11/70C30B7/14C30B29/46C30B29/48
    • A method of synthesizing colloidal semiconductor nanocrystals involves contacting a source of at least one semi-conductor cation element (Group 11-14, more preferably Group 12-14, more preferably 12 or 14, more preferably Cd, Zn, Hg or Pb, most preferably Cd) with a source of at least one Group 15, or 16 element in the presence of a ligand forming compound containing a carboxylic acid moiety in a reaction medium comprising a solvent that is substantially noncoordinating with respect to the at least one cation, the ligand forming compound and the source of at least one cation element having a molar ratio of 1:1 or less. The cation element source is preferably bonded to two low carbon acids. Some of the low carbon acids are substituted with the ligand forming compound to produce a cation precursor that is more soluble in the noncoordinating solvent. The method produces novel ensembles of colloidal semiconductor nanocrystals that have narrow linewidth absorption and bandgap photoluminescence spectra indicating that the colloidal semiconductor nanocrystals are of substantially a single size. The single size families are produced for CdSe, CdTe, CdS, CdSeTe, and CdP.
    • 合成胶体半导体纳米晶体的方法包括使至少一种半导体阳离子元素(第11-14族,更优选12-14族,更优选12或14个,更优选Cd,Zn,Hg或Pb 优选Cd),在含有相对于至少一个阳离子基本上不协调的溶剂的反应介质中,在含有羧酸部分的配体形成化合物存在下,具有至少一个第15族或16族元素的源, 配体形成化合物和摩尔比为1:1或更低的至少一种阳离子元素的源。 阳离子元素源优选与两个低碳酸键合。 一些低碳酸被形成配体的化合物取代,以产生更易溶于非配位溶剂的阳离子前体。 该方法产生具有窄线宽吸收和带隙光致发光光谱的胶体半导体纳米晶体的新颖集合,表明胶体半导体纳米晶体基本上是单一尺寸。 单个尺寸的系列产品用于CdSe,CdTe,CdS,CdSeTe和CdP。
    • 69. 发明授权
    • Method for producing phenol-BPA adduct crystals
    • 生产苯酚双酚A加合物晶体的方法
    • US08702863B2
    • 2014-04-22
    • US13782590
    • 2013-03-01
    • Badger Licensing LLC
    • Stephen W. Fetsko
    • C30B7/14
    • C07C37/84B01D9/0009C07C39/16
    • A method for the evaporative production of phenol-BPA adduct crystals in a crystallizer is provided. First, a supersaturated BPA solution is introduced into a crystallizer that includes a cylindrical vessel and a concentrically-disposed draft tube that defines an annular space between the vessel and tube. Next, the BPA solution is circulated through the draft tube and annular space while a coolant is uniformly distributed in the circulating flow by radially injecting a volatile hydrocarbon compound at between about 30% and 60% of a radial extent of the annular space of to form a BPA mixture. Phenol-BPA adduct crystals are produced in the vessel by evaporating the volatile hydrocarbon compound out of the BPA mixture. The method provides a consistent and uniform concentration of coolant across the surface of the boiling zone that prevents or at least reduces unwanted crystal nucleation.
    • 提供了一种在结晶器中蒸发生产苯酚 - BPA加合物晶体的方法。 首先,将过饱和BPA溶液引入结晶器中,该结晶器包括圆柱形容器和在容器和管之间限定环形空间的同心设置的通气管。 接下来,BPA溶液通过引流管和环形空间循环,同时通过在环形空间的径向范围的约30%至60%之间径向注入挥发性烃化合物,均匀分布在循环流中,形成 BPA混合物 通过将挥发性烃化合物从BPA混合物中蒸发而在容器中产生苯酚-BPA加合物晶体。 该方法提供了在沸腾区域的表面上一致且均匀的冷却剂浓度,其防止或至少减少了不想要的晶体成核。