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    • 64. 发明申请
    • SUPPLY BOOST DEVICE
    • 供应升压装置
    • US20160308533A1
    • 2016-10-20
    • US14688897
    • 2015-04-16
    • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    • Ying-Yu HSUChien-Chun TSAIYu-Nan SHIH
    • H03K19/0185
    • H03K19/018521
    • A device is disclosed that includes a driver circuit and a control circuit. The driver circuit is configured to provide an output signal according to an input signal, and operated with a first voltage and a second voltage. The driver circuit includes a pull up unit and a pull down unit configured to pull up and pull down a voltage level of the output signal, respectively. The control circuit is configured to selectively enable one of the pull up unit and the pull down unit according to the input signal, so as to adjust the voltage level of the output signal. The control circuit is further configured to drive the enabled one of the pull up unit and the pull down unit in a voltage mode or a current mode selectively according to the voltage level of the output signal, the first voltage and the second voltage.
    • 公开了一种包括驱动电路和控制电路的装置。 驱动器电路被配置为根据输入信号提供输出信号,并且以第一电压和第二电压进行操作。 驱动器电路包括分别上拉和下拉输出信号电压电平的上拉单元和下拉单元。 控制电路被配置为根据输入信号选择性地使能上拉单元和下拉单元中的一个,以便调节输出信号的电压电平。 控制电路还被配置为根据输出信号的电压电平,第一电压和第二电压选择性地以电压模式或电流模式驱动上拉单元和下拉单元中的使能的一个。
    • 67. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE REGARDING THE DETECTION OF DEGRADATION
    • 关于降解检测的半导体集成电路设备
    • US20160226493A1
    • 2016-08-04
    • US15040817
    • 2016-02-10
    • SK hynix Inc.
    • Jeong Tae HWANGJin Youp CHAYoung Sik HEO
    • H03K19/0185G01R31/28H03K17/687
    • H03K19/018521G01R31/2856H03K17/102
    • A semiconductor integrated circuit device may include a target PMOS transistor, a target NMOS transistor, a first stress-applying circuit, a second stress-applying circuit, a third stress-applying circuit and a fourth stress-applying circuit. An inverter may include the target PMOS transistor and the NMOS transistor. The first stress-applying circuit may be configured to apply a first DC level to a gate of the target PMOS transistor. The second stress-applying circuit may be configured to apply a second DC level to a gate of the target NMOS transistor. The third stress-applying circuit may be configured to apply an AC voltage shape to the gate of the target NMOS transistor. The fourth stress-applying circuit may be configured to apply the AC voltage to a drain of the target NMOS transistor.
    • 半导体集成电路器件可以包括目标PMOS晶体管,目标NMOS晶体管,第一应力施加电路,第二应力施加电路,第三应力施加电路和第四应力施加电路。 反相器可以包括目标PMOS晶体管和NMOS晶体管。 第一应力施加电路可以被配置为将第一DC电平施加到目标PMOS晶体管的栅极。 第二应力施加电路可以被配置为将第二DC电平施加到目标NMOS晶体管的栅极。 第三应力施加电路可以被配置为向目标NMOS晶体管的栅极施加AC电压形状。 第四应力施加电路可以被配置为将AC电压施加到目标NMOS晶体管的漏极。
    • 68. 发明授权
    • Voltage level shifter for high voltage applications
    • 用于高压应用的电压电平转换器
    • US09407242B2
    • 2016-08-02
    • US14743828
    • 2015-06-18
    • FREESCALE SEMICONDUCTOR, INC.
    • Liang QiuWenzhong Zhang
    • H03K3/00H03K3/356
    • H03K3/356H03K3/356113H03K19/018521
    • A voltage level shifter for high voltage applications has a low voltage domain current mirror having first and second branches. A high voltage switch and a resistor are connected in series with the second branch. An output stage provides an output signal that is a function of a voltage difference across the resistor, and the output stage and the resistor are in the high voltage domain. Assertion of an input signal in the low voltage domain develops a first current in the first branch, and causes the high voltage switch to pass in the resistor a second current from the second branch that is a function of the first current and develops the voltage difference across the resistor. Only the high voltage switch needs to have high breakdown voltage characteristics.
    • 用于高电压应用的电压电平转换器具有具有第一和第二分支的低电压域电流镜。 高压开关和电阻与第二支路串联。 输出级提供作为电阻器两端的电压差的函数的输出信号,并且输出级和电阻器处于高电压域。 在低电压域中输入信号的断言在第一分支中形成第一电流,并且使得高压开关从第二分支传递电阻器到第二电流的第二电流,该第二分支是第一电流的函数,并且产生电压差 跨过电阻 只有高压开关需要具有较高的击穿电压特性。
    • 69. 发明申请
    • SERIALIZING TRANSMITTER
    • 串行发送器
    • US20160218753A1
    • 2016-07-28
    • US14604643
    • 2015-01-23
    • Microsoft Technology Licensing, LLC
    • Alan S. Fiedler
    • H04B1/04
    • H04B1/04H03K19/0005H03K19/018521H04B1/0057
    • In embodiments of a serializing transmitter, the serializing transmitter includes N multiplexing drive units, each configured to generate a series of output pulses derived from input data signals and multi-phase clock signals, and each multiplexing drive unit including a pulse-controlled push-pull output driver having first and second inputs and an output. Each multiplexing driver unit further includes a first M:1 pulse-generating multiplexer having an output coupled to the first input of the pulse-controlled push-pull output driver, and a second M:1 pulse-generating multiplexer having an output coupled to the second input of the pulse-controlled push-pull output driver, wherein each of the first and second M:1 pulse-generating multiplexers has four or fewer clock inputs.
    • 在串行发射机的实施例中,串行发射机包括N个复用驱动单元,每个复用驱动单元被配置为产生从输入数据信号和多相时钟信号导出的一系列输出脉冲,并且每个复用驱动单元包括脉冲控制的推挽 输出驱动器具有第一和第二输入和输出。 每个复用驱动器单元还包括具有耦合到脉冲控制的推挽输出驱动器的第一输入的输出的第一M:1脉冲产生多路复用器和第二M:1脉冲产生多路复用器,其输出耦合到 脉冲控制推挽输出驱动器的第二输入,其中第一和第二M:1脉冲发生多路复用器中的每一个具有四个或更少的时钟输入。
    • 70. 发明授权
    • Level-shift circuits compatible with multiple supply voltage
    • 电平转换电路与多电源电压兼容
    • US09391619B2
    • 2016-07-12
    • US14326747
    • 2014-07-09
    • VIA Alliance Semiconductor Co., Ltd.
    • Qiang SiCheng Liu
    • H03K3/00H03K19/0175
    • H03K17/08122H03K19/0175H03K19/018521
    • A level-shift circuit, receiving a supply voltage and a input signal, includes a pre-stage voltage conversion circuit and a post-stage voltage conversion circuit. The pre-stage voltage conversion circuit includes a first voltage protection module generating an inner conversion voltage and a first voltage conversion module converting the input signal into a pre-stage output signal according to the inner conversion voltage. The post-stage voltage conversion circuit includes a second voltage protection module generating a first inverse output signal, a first output signal, a second inverse output signal, and a second output signal. The transistors of the pre-stage voltage conversion circuit and the post-stage voltage conversion circuit have a punch-through voltage. The level-shift makes the stress of the transistors less than the punch-through voltage when the supply voltage is greater than the punch-through voltage, and remains the driving capability when being less than the punch-through voltage.
    • 接收电源电压和输入信号的电平移位电路包括前级电压转换电路和后级电压转换电路。 前级电压转换电路包括产生内部转换电压的第一电压保护模块和根据内部转换电压将输入信号转换成前级输出信号的第一电压转换模块。 后级电压转换电路包括产生第一反相输出信号,第一输出信号,第二反相输出信号和第二输出信号的第二电压保护模块。 前级电压转换电路和后级电压转换电路的晶体管具有穿通电压。 当电源电压大于穿通电压时,电平漂移使得晶体管的应力小于穿通电压,并且当小于穿通电压时,其保持驱动能力。