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61. 发明授权

US07528681B2 Acoustic devices using an AlGaN piezoelectric region 失效
标题翻译：使用AlGaN压电区域的声学器件
公开(公告)号：US07528681B2
公开(公告)日：2009-05-05
申请号：US11312035
申请日：2005-12-20
申请人： Clifford F. Knollenberg , Michael Kneissl , Noble M. Johnson
发明人： Clifford F. Knollenberg , Michael Kneissl , Noble M. Johnson
IPC分类号： H03H9/25 , H03H3/02 , H03H9/54
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/173 , H03H9/587 , Y10T29/42
摘要： Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region.In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.
摘要翻译：提供一种形成基于声学的装置的方法，包括形成具有第一表面和第二表面的AlGaN区域。第一电极沉积在AlGaN区域的第一表面上，然后第二电极沉积在AlGaN区域的第二表面上。在本申请的另一方面，通过外延层过度生长工艺形成AlGaN区域。

62. 发明授权

US07436269B2 Acoustically coupled resonators and method of making the same 有权
标题翻译：声耦合谐振器及其制作方法
公开(公告)号：US07436269B2
公开(公告)日：2008-10-14
申请号：US11109596
申请日：2005-04-18
申请人： Kun Wang , Paul D. Bradley , Richard C. Ruby
发明人： Kun Wang , Paul D. Bradley , Richard C. Ruby
IPC分类号： H03H9/70 , H03H9/54
CPC分类号： H03H9/587 , H03H3/02 , H03H7/1708 , H03H9/0095 , H03H9/0571 , H03H9/583 , H03H9/584 , H03H9/706 , H03H2003/0428 , Y10T29/49002
摘要： An apparatus includes a substrate with a cavity and a two-stage resonator filter fabricated over the cavity. The two-stage resonator filter includes a first stage and a second stage. The first stage includes a first resonator and a second resonator, the second resonator acoustically coupled to the first resonator. The second stage includes a third resonator and a fourth resonator, the fourth resonator acoustically coupled to the third resonator. The second resonator and the third resonators are electrically coupled. A decoupling layer couples the first resonator and the second resonator. The decoupling layer extends between the third resonator and the fourth resonator. The first resonator and the fourth resonator are above the substrate. The decoupling layer is above the first resonator and the fourth resonator. The second resonator and the third resonators are above the decoupling layer.
摘要翻译：一种装置包括具有空腔的衬底和在空腔上制造的两级谐振器滤波器。两级谐振滤波器包括第一级和第二级。第一级包括第一谐振器和第二谐振器，第二谐振器声耦合到第一谐振器。第二级包括第三谐振器和第四谐振器，第四谐振器声耦合到第三谐振器。第二谐振器和第三谐振器电耦合。去耦层耦合第一谐振器和第二谐振器。解耦层在第三谐振器和第四谐振器之间延伸。第一谐振器和第四谐振器在衬底之上。去耦层位于第一谐振器和第四谐振器之上。第二谐振器和第三谐振器在去耦层之上。

63. 发明申请

US20080129417A1 Ladder type filter 审中-公开
标题翻译：梯型过滤器
公开(公告)号：US20080129417A1
公开(公告)日：2008-06-05
申请号：US11907704
申请日：2007-10-16
申请人： Shinji Taniguchi , Tokihiro Nishihara , Tsuyoshi Yokoyama , Masafumi Iwaki , Go Endo , Yasuyuki Saitou , Hisanori Ehara , Masanori Ueda
发明人： Shinji Taniguchi , Tokihiro Nishihara , Tsuyoshi Yokoyama , Masafumi Iwaki , Go Endo , Yasuyuki Saitou , Hisanori Ehara , Masanori Ueda
IPC分类号： H03H9/56
CPC分类号： H03H9/205 , H03H3/00 , H03H3/0073 , H03H3/04 , H03H9/0211 , H03H9/02118 , H03H9/02133 , H03H9/02149 , H03H9/131 , H03H9/132 , H03H9/15 , H03H9/173 , H03H9/174 , H03H9/178 , H03H9/54 , H03H9/568 , H03H9/587 , H03H9/588 , H03H9/605 , H03H9/6483 , H03H2003/021 , H03H2003/023 , H03H2003/0414 , H03H2003/0471 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/49124 , Y10T29/49208 , Y10T29/49224
摘要： A ladder filter includes a series resonator having a first film laminate in which an upper electrode and a lower electrode face each other across a piezoelectric film, and a first film provided on the first film laminate, and a parallel resonator having a second film laminate having a structure similar to that of the first film laminate, a second film provided on the second film laminate, and another first film identical to the first film.
摘要翻译：梯形滤波器包括串联谐振器，其具有第一膜层叠体，其中上电极和下电极在压电膜上彼此面对，第一膜设置在第一膜层叠体上，并且具有第二膜层叠体，类似于第一膜层压体的结构，设置在第二膜层压体上的第二膜和与第一膜相同的另一第一膜。

64. 发明授权

US07378922B2 Piezoelectric filter 有权
标题翻译：压电滤波器
公开(公告)号：US07378922B2
公开(公告)日：2008-05-27
申请号：US11655129
申请日：2007-01-19
申请人： Ryuichi Kubo , Takahiro Oguchi , Hajime Yamada
发明人： Ryuichi Kubo , Takahiro Oguchi , Hajime Yamada
IPC分类号： H03H9/54 , H03H9/64 , H03H9/70
CPC分类号： H03H9/587 , B81B2201/0271 , B81C1/00238 , H03H9/105 , H03H9/1092 , H03H9/564
摘要： A piezoelectric filter that includes a first substrate having at least one first piezoelectric resonator disposed on a main surface thereof; a second substrate having at least one second piezoelectric resonator disposed on a main surface thereof. A connection pattern extends around the first piezoelectric resonator and the second piezoelectric resonator and is disposed between the first substrate and the second substrate such that the main surface of the first substrate faces the main surface of the second substrate, and the first piezoelectric resonator is remote from the second piezoelectric resonator. A connecting layer bonds a pad disposed on the main surface of the first substrate to a pad disposed on the main surface of the second substrate, and is electrically connected to the first piezoelectric resonator and the second piezoelectric resonator.
摘要翻译：一种压电滤波器，包括：第一基板，具有设置在其主表面上的至少一个第一压电谐振器; 第二基板，其具有设置在其主表面上的至少一个第二压电谐振器。连接图案围绕第一压电谐振器和第二压电谐振器延伸并且设置在第一基板和第二基板之间，使得第一基板的主表面面向第二基板的主表面，并且第一压电谐振器是远程的从第二压电谐振器。连接层将设置在第一基板的主表面上的焊盘与设置在第二基板的主表面上的焊盘接合，并且电连接到第一压电谐振器和第二压电谐振器。

65. 发明申请

US20070176710A1 Impedance transforming bulk acoustic wave baluns 有权
标题翻译：阻抗变换体积声波平衡不平衡变压器
公开(公告)号：US20070176710A1
公开(公告)日：2007-08-02
申请号：US11343117
申请日：2006-01-30
申请人： Tiberiu Jamneala , John Larson , Richard Ruby
发明人： Tiberiu Jamneala , John Larson , Richard Ruby
IPC分类号： H03H9/56
CPC分类号： H03H9/584 , H03H9/0095 , H03H9/587 , H03H9/589
摘要： A bulk acoustic wave device includes an acoustic decoupler between first and second film bulk acoustic resonators (FBARs). The first FBAR is resonant at a resonant frequency of the device and includes first and second planar electrodes abutting opposite sides of a first resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to a propagation axis normal to the first and second electrodes. The first FBAR has a first electrical impedance parallel to the propagation axis. The second FBAR is resonant at the resonant frequency and includes third and fourth planar electrodes abutting opposite sides of a second resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to the propagation axis. The second FBAR has a second electrical impedance parallel to the propagation axis and different from the first electrical impedance.
摘要翻译：体声波器件包括第一和第二膜体声波谐振器（FBAR）之间的声耦合器。第一FBAR以该器件的谐振频率谐振，并且包括第一和第二平面电极，该第一和第二平面电极邻接第一谐振器体的相对侧，第一谐振器体积不含任何中间电极，并且包含压电材料，该压电材料设置为平行于垂直于第一谐振器的传播轴的声振动，第二电极。第一个FBAR具有平行于传播轴的第一个电阻抗。第二FBAR在谐振频率下谐振，并且包括第三和第四平面电极，其邻接没有任何中间电极的第二谐振器体的相对侧，并且包含被设置用于平行于传播轴的声学振动的压电材料。第二FBAR具有平行于传播轴线并且不同于第一电阻抗的第二电阻抗。

66. 发明申请

US20070170565A1 RF module, multi RF module including the RF module, and method of manufacturing the RF module 有权
标题翻译： RF模块，包括RF模块的多RF模块和RF模块的制造方法
公开(公告)号：US20070170565A1
公开(公告)日：2007-07-26
申请号：US11634247
申请日：2006-12-06
申请人： Seog-woo Hong , In-sang Song , Byeong-ju Ha , Hae-seok Park , Jun-sik Hwang , Joo-ho Lee
发明人： Seog-woo Hong , In-sang Song , Byeong-ju Ha , Hae-seok Park , Jun-sik Hwang , Joo-ho Lee
IPC分类号： H01L23/02
CPC分类号： H03H9/0547 , H01L2924/0002 , H03H9/587 , H01L2924/00
摘要： A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.
摘要翻译：射频（RF）模块和包括其的多RF模块包括基底基板，能够处理形成在基底基板上的RF信号的第一元件，能够处理从第一元件分离并布置在第一元件上的RF信号的第二元件，与所述基底衬底耦合以封装所述第一和第二元件的帽衬底，所述第一和第二元件包括将所述第一和第二元件电连接到外部的多个通孔，以及封装并连接所述基底衬底和所述帽衬底的焊盘，以及将第一和第二元件电连接到贯通电极。

67. 发明申请

US20070139141A1 Acoustic devices using an AIGaN piezoelectric region 失效
标题翻译：使用AIGaN压电区域的声学装置
公开(公告)号：US20070139141A1
公开(公告)日：2007-06-21
申请号：US11312035
申请日：2005-12-20
申请人： Clifford Knollenberg , Michael Kneissl , Noble Johnson
发明人： Clifford Knollenberg , Michael Kneissl , Noble Johnson
IPC分类号： H03H9/56
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/173 , H03H9/587 , Y10T29/42
摘要： Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region. In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.
摘要翻译：提供一种形成基于声学的装置的方法，包括形成具有第一表面和第二表面的AlGaN区域。第一电极沉积在AlGaN区域的第一表面上，然后第二电极沉积在AlGaN区域的第二表面上。在本申请的另一方面，通过外延层过度生长工艺形成AlGaN区域。

68. 发明申请

US20070120625A1 Film bulk acoustic resonator (FBAR) devices with temperature compensation 有权
标题翻译：具有温度补偿的薄膜体声波谐振器（FBAR）器件
公开(公告)号：US20070120625A1
公开(公告)日：2007-05-31
申请号：US11291674
申请日：2005-11-30
申请人： John Larson , John Choy , Donald Lee , Kevin Grannen , Hongjun Feng , Carrie Rogers , U.C. Sridharan
发明人： John Larson , John Choy , Donald Lee , Kevin Grannen , Hongjun Feng , Carrie Rogers , U.C. Sridharan
IPC分类号： H03H9/58
CPC分类号： H03H3/04 , H03H9/02102 , H03H9/131 , H03H9/132 , H03H9/173 , H03H9/584 , H03H9/587 , H03H9/605 , H03H2003/021 , H03H2003/0407
摘要： The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.
摘要翻译：温度补偿膜体声波谐振器（FBAR）装置包括FBAR堆叠，其包括以具有温度系数的谐振频率和包含掺杂二氧化硅的温度补偿层为特征的FBAR。 FBAR包括相对的平面电极和电极之间的压电元件。压电元件具有温度系数，FBAR的谐振频率的温度系数至少部分地取决于该温度系数。

69. 发明申请

US20070085631A1 Acoustic galvanic isolator incorporating film acoustically-coupled transformer 有权
标题翻译：声学电隔离器结合膜声耦合变压器
公开(公告)号：US20070085631A1
公开(公告)日：2007-04-19
申请号：US11253463
申请日：2005-10-18
申请人： John Larson , Ian Hardcastle
发明人： John Larson , Ian Hardcastle
IPC分类号： H03H9/00
CPC分类号： H03H9/584 , H03H9/132 , H03H9/587 , H03H9/605
摘要： Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and, connected between the modulator and the demodulator, an electrically-isolating acoustic coupler comprising an electrically-isolating film acoustically-coupled transformer (FACT).
摘要翻译：声学电流隔离器的实施例包括载波信号源，连接以接收信息信号的调制器和载波信号，解调器，以及连接在调制器和解调器之间的电隔离声耦合器，包括电隔离膜声耦合变压器（FACT）。

70. 发明申请

US20070085447A1 Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator 有权
标题翻译：声学电隔离器结合了具有声学谐振电绝缘体的单绝缘去耦堆叠体声共振器
公开(公告)号：US20070085447A1
公开(公告)日：2007-04-19
申请号：US11253508
申请日：2005-10-18
申请人： John Larson
发明人： John Larson
IPC分类号： H01L41/107
CPC分类号： H04B11/00 , H01L41/107 , H03H9/132 , H03H9/584 , H03H9/587
摘要： Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and an electrically-isolating acoustic coupler connected between the modulator and the demodulator. The acoustic coupler comprises no more than one decoupled stacked bulk acoustic resonator (IDSBAR). An electrically-isolating acoustic coupler based on a single IDSBAR is physically small and is inexpensive to fabricate yet is capable of passing information signals having data rates in excess of 100 Mbit/s and has a substantial breakdown voltage between its inputs and its outputs.
摘要翻译：声学电流隔离器的实施例包括载波信号源，连接以接收信息信号的调制器和载波信号，解调器和连接在调制器和解调器之间的电隔离声耦合器。声耦合器包括不超过一个解耦堆叠体声波谐振器（IDSBAR）。基于单个IDSBAR的电隔离声学耦合器在物理上是小的并且制造成本低，但是能够传递具有超过100Mbit / s的数据速率的信息信号，并且在其输入和其输出之间具有显着的击穿电压。

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