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    • 62. 发明申请
    • SURFACE ACOUSTIC WAVE DEVICE AND FILTER
    • 表面声波设备和滤波器
    • US20150123746A1
    • 2015-05-07
    • US14482272
    • 2014-09-10
    • TAIYO YUDEN CO., LTD.
    • Kentaro NAKAMURAHidetaro NAKAZAWAShogo INOUEJun TSUTSUMI
    • H03H9/64H01L41/047H03H9/25
    • H03H9/6489H03H3/08H03H9/02818
    • A surface acoustic wave device includes: a pair of comb-like electrodes formed on a piezoelectric substrate, each of which includes electrode fingers, dummy electrode fingers and a bus bar to which the electrode fingers and the dummy electrode fingers are connected, the electrode fingers and the dummy electrode fingers of one of the pair of comb-like electrodes facing the dummy electrode fingers and the electrode fingers of the other com-like electrode, respectively; and additional films extending in the form of a strip in a first direction in which the electrode fingers are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other comb-like electrode.
    • 表面声波装置包括:形成在压电基板上的一对梳状电极,每一个都包括电极指,虚拟电极指和连接有电极指和虚拟电极指的汇流条,电极指 并且一对梳状电极中的一个的虚拟电极指分别面对虚拟电极指和另一个com状电极的电极指; 以及在电极指并排布置的第一方向上以带状形式延伸的附加膜,每个附加膜覆盖由一对梳子之一的电极指的端部限定的至少部分间隙 电极和另一梳状电极的虚拟电极指的端部。
    • 63. 发明申请
    • ACOUSTIC WAVE ELEMENT, BRANCHING FILTER AND COMMUNICATION MODULE
    • 声音波形元件,分支滤波器和通信模块
    • US20150070227A1
    • 2015-03-12
    • US14397169
    • 2013-04-24
    • KYOCERA Corporation
    • Tetsuya KishinoTsuyoshi Nakai
    • H03H9/02H01L41/047
    • H03H9/02992H01L41/047H03H9/0009H03H9/0038H03H9/02818H03H9/0542H03H9/0576H03H9/1452H03H9/14544H03H9/14573H03H9/725
    • SAW element has a substrate; an IDT having a first comb-shaped electrode and a second comb-shaped electrode located on an upper surface of the substrate; and a capacitance element located on the upper surface of the substrate. The capacitance element has a first counter electrode connected to the first comb-shaped electrode and a second counter electrode connected to the second comb-shaped electrode and facing the first counter electrode across a third gaps. The direction from the first counter electrode through the third gaps toward the second counter electrode is a reverse direction from the direction from the first comb-shaped electrode through the gaps toward the second comb-shaped electrode. If it is assumed that the gap and width of the gap are di and wi, and the gap and width of the third gap are Dj and Wj, the following formula holds: 0
    • SAW元件具有基板; IDT,其具有位于所述基板的上表面上的第一梳状电极和第二梳状电极; 以及位于基板的上表面上的电容元件。 电容元件具有连接到第一梳状电极的第一对电极和连接到第二梳状电极并且跨越第三间隙面向第一对电极的第二对电极。 从第一对电极到第三间隙朝向第二对置电极的方向是从第一梳状电极通过间隙朝向第二梳状电极的方向的相反方向。 如果假定间隙的间隙和宽度为di和wi,并且第三间隙的间隙和宽度为Dj和Wj,则下式保持:0 <&Sgr(Wj / Dj2)<2&Sgr;(wi / di2)
    • 67. 发明申请
    • ACOUSTIC WAVE ELEMENT AND ACOUSTIC WAVE ELEMENT SENSOR
    • 声波元件和声波元件传感器
    • US20120146457A1
    • 2012-06-14
    • US13391416
    • 2010-08-30
    • Rei GotoHidekazu NakanishiHiroyuki Nakamura
    • Rei GotoHidekazu NakanishiHiroyuki Nakamura
    • H01L41/08
    • H03H9/0222G01N29/022G01N2291/0423H03H9/02818H03H9/02984
    • An acoustic wave element includes a piezoelectric body, an input IDT electrode, an output IDT electrode, a propagation path provided between the input IDT electrode and the output IDT electrode, a first dielectric layer provided on the piezoelectric body so as to cover the input IDT electrode and the output IDT electrode, and a reactive portion provided on the propagation path and reacting to a substance to be detected or a binding substance that binds with the substance to be detected. The main acoustic wave becomes, in the input IDT electrode and the output IDT electrode, a boundary acoustic wave that propagates between the piezoelectric body and the first dielectric layer, and becomes, in the propagation path, a surface acoustic wave that propagates on an upper surface of the propagation path. With this structure, deterioration of the element characteristic is suppressed.
    • 声波元件包括压电体,输入IDT电极,输出IDT电极,设置在输入IDT电极和输出IDT电极之间的传播路径,设置在压电体上以覆盖输入IDT的第一介电层 电极和输出IDT电极,以及设置在传播路径上并与被检测物质或与待检测物质结合的结合物质反应的反应部分。 在输入IDT电极和输出IDT电极中,主声波成为在压电体和第一电介质层之间传播的声界面波,并且在传播路径中成为在上部传播的表面声波 传播路径的表面。 由此,能够抑制元件特性的劣化。
    • 69. 发明授权
    • Saw filter device
    • 锯片过滤器
    • US07626475B2
    • 2009-12-01
    • US12132033
    • 2008-06-03
    • Yasumawa Taniguchi
    • Yasumawa Taniguchi
    • H03H9/64
    • H03H9/02559H03H9/02818H03H9/6409H03H9/6483H03H9/6493
    • A SAW filter device includes a SAW filter chip in which one-port surface acoustic wave resonators each including an IDT made of Al or an Al alloy, are provided on a θ-rotated Y-cut X-propagation LiNbO3 substrate. The cutting angle θ of the θ-rotated Y-cut X-propagation LiNbO3 substrate is in the range between about 50° and about 55°. The normalized film thickness of the IDT 100h/λ (%) (h denotes the thickness of the IDT and λ denotes the wavelength of a surface acoustic wave) is in the range between about 2% and about 4%. The duty ratio of the IDT is equal to or less than about 0.4.
    • SAW滤波器装置包括SAW滤波器芯片,其中在θ旋转的Y切X传播LiNbO 3衬底上设置有各自包括由Al或Al合金制成的IDT的单端口声表面波谐振器。 θ旋转Y切X传播LiNbO 3基板的切割角度θ在约50°至约55°的范围内。 IDT的标准化膜厚度100h /λ(%)(h表示IDT的厚度,λ表示声表面波的波长)在约2%至约4%的范围内。 IDT的占空比等于或小于约0.4。
    • 70. 发明授权
    • Surface acoustic wave device and communication apparatus
    • 声表面波装置及通信装置
    • US06429569B1
    • 2002-08-06
    • US09613777
    • 2000-07-11
    • Michio Kadota
    • Michio Kadota
    • H01L4108
    • H03H9/6446H03H9/0028H03H9/008H03H9/02622H03H9/02669H03H9/02716H03H9/02795H03H9/02818H03H9/25H03H9/6433
    • A surface acoustic wave device includes a piezoelectric substrate, a first interdigital transducer, a second interdigital transducer and a first coupler. The first and second interdigital transducers are,arranged on the surface of the piezoelectric substrate such that the second interdigital transducer is offset from a direction in which a surface acoustic wave excited by the first IDT propagates. A first edge is provided on the piezoelectric substrate to reflect the excited surface acoustic wave to the first and second interdigital transducers, and the first coupler having a plurality of metal strips on the piezoelectric substrate is provided between the first edge of the piezoelectric substrate and at least one of the first and second interdigital transducers so as to be adjacent to the first and second interdigital transducers. The surface acoustic wave device operates using a shear horizontal surface wave.
    • 表面声波装置包括压电基片,第一叉指换能器,第二叉指换能器和第一耦合器。 第一和第二叉指换能器布置在压电基片的表面上,使得第二叉指式换能器偏离由第一IDT激发的表面声波传播的方向。 在压电基板上设置第一边缘以将激发的表面声波反射到第一和第二叉指式换能器,并且在压电基板上具有多个金属条的第一耦合器设置在压电基板的第一边缘和 第一和第二叉指换能器中的至少一个以便与第一和第二叉指换能器相邻。 表面声波装置使用剪切水平表面波进行操作。