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61. 发明申请

US20070008050A1 Bulk acoustic resonator including a resonance part with dimple and fabrication method therefor 失效
标题翻译：包括具有凹坑的共振部分的体声波谐振器及其制造方法
公开(公告)号：US20070008050A1
公开(公告)日：2007-01-11
申请号：US11397704
申请日：2006-04-05
申请人： Kyu-dong Jung , Jong-oh Kwon , Woon-bae Kim , In-sang Song
发明人： Kyu-dong Jung , Jong-oh Kwon , Woon-bae Kim , In-sang Song
IPC分类号： H03H9/54
CPC分类号： H03H9/173 , H03H3/02 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： A bulk acoustic resonance and a method for fabricating the bulk acoustic resonator, the bulk acoustic resonator including: a substrate including an upper surface defining a predetermined area including a cavity; a resonance part positioned above the cavity and including a surface comprising a dimple; and an anchor part connecting the resonance part to the substrate. The resonance part includes: a lower electrode including a lower surface including a predetermined dimpled area and an upper surface opposite to the predetermined dimpled area; a piezoelectric layer stacked on the upper surface of the lower electrode; and an upper electrode stacked on the piezoelectric layer. Because direction of the vibration of the resonator is adjustable by adjusting position, area, and the number of the dimples, process freedom can be improved.
摘要翻译：一种体声共振和一种用于制造体声波谐振器的方法，所述体声波谐振器包括：基板，包括限定包括空腔的预定区域的上表面; 谐振部分，其位于空腔上方并包括包括凹坑的表面; 以及将共振部分连接到基板的锚固部分。共振部包括：下电极，其包括具有预定凹坑区域的下表面和与预定凹坑区域相对的上表面; 压电层，堆叠在下电极的上表面上; 以及堆叠在压电层上的上电极。由于通过调节位置，面积和凹坑的数量来调节谐振器的振动方向，可以提高工艺自由度。

62. 发明授权

US07161283B1 Method for placing metal contacts underneath FBAR resonators 有权
标题翻译：在FBAR谐振器下面放置金属触点的方法
公开(公告)号：US07161283B1
公开(公告)日：2007-01-09
申请号：US11174364
申请日：2005-06-30
申请人： Frank S. Geefay
发明人： Frank S. Geefay
IPC分类号： H01L41/047 , H01L41/053
CPC分类号： H03H9/173 , H03H3/02 , H03H9/0547 , H03H2003/021
摘要： A device includes a device substrate defining a pit in a topside of the device substrate, a film bulk-wave acoustic resonator (FBAR) mounted over the pit on the device substrate, a first contact pad on a backside of the device substrate that is coupled to a bottom electrode of the FBAR, and a second contact pad on the backside of the device substrate that is coupled to a top electrode of the FBAR.
摘要翻译：一种器件包括在器件衬底的顶侧中限定凹坑的器件衬底，安装在器件衬底上的凹坑上的膜体波声共振器（FBAR），在器件衬底背面的第一接触焊盘，到FBAR的底部电极，以及耦合到FBAR的顶部电极的器件衬底的背面上的第二接触焊盘。

63. 发明申请

US20060001508A1 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR 失效
标题翻译：薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
公开(公告)号：US20060001508A1
公开(公告)日：2006-01-05
申请号：US11169645
申请日：2005-06-30
申请人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
IPC分类号： H03H9/56
CPC分类号： H03H9/02094 , H03H3/04 , H03H9/02133 , H03H9/173 , H03H9/174 , H03H9/703 , H03H2003/021 , H03H2003/023
摘要： A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
摘要翻译：薄膜体声波谐振器包括具有空腔的基板; 部分地固定在基板上的底部电极，底部电极的一部分机械地悬挂在空腔上方; 设置在底部电极上的压电层; 以及设置在压电体层上的顶电极，其具有沿着压电体层的厚度方向取向的晶轴，所述晶轴的取向分布的半峰全宽小于或等于约6度。

64. 发明授权

US06965281B2 FBAR, FBAR based duplexer device and manufacturing method thereof 失效
标题翻译： FBAR，基于FBAR的双工器及其制造方法
公开(公告)号：US06965281B2
公开(公告)日：2005-11-15
申请号：US10756318
申请日：2004-01-14
申请人： Kook Hyun Sunwoo , Jong Oh Kwon
发明人： Kook Hyun Sunwoo , Jong Oh Kwon
IPC分类号： H01L41/22 , H01L41/09 , H01L41/23 , H01L41/29 , H01L41/312 , H01L41/338 , H03H3/02 , H03H9/10 , H03H9/17 , H03H9/70 , H03H9/56
CPC分类号： H03H9/105 , H03H3/02 , H03H9/0571 , H03H9/706 , H03H2003/021
摘要： Disclosed herein is a film bulk acoustic resonator (FBAR), an FBAR based duplexer device, and a manufacturing method thereof, which a plurality of sacrificial layer units are formed on a substrate wafer so as to be spaced apart from one another at regular distances, and device functional portions are formed on the sacrificial layer units, respectively. The device functional portions have a piezoelectric layer unit and a plurality of electrodes. Then, side wall and roof of protective formed by the use of dry film. After hardening the dry film, the wafer is cut into a plurality of the wafer sections so as to contain the device functional portions, respectively.
摘要翻译：本文公开了一种薄膜体声波谐振器（FBAR），基于FBAR的双工器件及其制造方法，其中多个牺牲层单元形成在基板晶片上，以便以规则的距离彼此间隔开，并且在牺牲层单元上分别形成器件功能部分。器件功能部分具有压电层单元和多个电极。然后，侧墙和屋顶采用干膜形成保护膜。硬化干膜后，将晶片切割成多个晶片部分，以分别容纳器件功能部分。

65. 发明申请

US20050184627A1 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US20050184627A1
公开(公告)日：2005-08-25
申请号：US11043257
申请日：2005-01-27
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/047 , H01L41/22 , H03H3/02 , H03H9/02 , H03H9/15 , H03H9/17
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

66. 发明授权

US06839946B2 Method for fabricating a thin film bulk acoustic wave resonator (FBAR) on a glass substrate 有权
标题翻译：在玻璃基板上制造薄膜体声波谐振器（FBAR）的方法
公开(公告)号：US06839946B2
公开(公告)日：2005-01-11
申请号：US10278612
申请日：2002-10-22
申请人： Markku Antero Ylilammi , Meeri Talvikki Partanen
发明人： Markku Antero Ylilammi , Meeri Talvikki Partanen
IPC分类号： H01L41/09 , H01L41/22 , H03H3/02 , H03H9/17 , H04R17/00 , H01L41/04 , H01L41/08 , H01L41/18
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165
摘要： A method for fabricating a Thin Film Bulk Acoustic Wave Resonator (FBAR). The method comprises the steps of: (A) forming a sacrificial layer comprising one of a metal and a polymer over a selected portion of a substrate; (B) forming a protective layer on the sacrificial layer and on selected portions of the substrate; (C) forming a bottom electrode layer on a selected portion of the protective layer; (D) forming a piezoelectric layer on a selected portion of the bottom electrode layer and on a selected portion of the protective layer; (E) forming a top electrode on a selected portion of the piezoelectric layer; and (F) removing the sacrificial layer to form an air gap. The use of a metal or a polymer material to form sacrificial layers has several advantages over the use of zinc-oxide (ZnO) to form such layers. In accordance with a further aspect of the invention, an FBAR is provided which includes a glass substrate. The use of glass to form substrates offers several advantages over the use of other materials to form substrates. By example, most types of glass are less expensive than semiconductor materials, and exhibit low permittivity characteristics, and low parasitic capacitances. In addition, most glass materials are substantially loss free when being used in microwave frequency applications.
摘要翻译：一种制造薄膜体声波谐振器（FBAR）的方法。该方法包括以下步骤：（A）在衬底的选定部分上形成包含金属和聚合物之一的牺牲层; （B）在所述牺牲层上和所述衬底的选定部分上形成保护层; （C）在所述保护层的选定部分上形成底部电极层; （D）在所述底电极层的选定部分和所述保护层的选定部分上形成压电层; （E）在所述压电层的选定部分上形成顶部电极; 和（F）去除牺牲层以形成气隙。使用金属或聚合物材料来形成牺牲层相比于使用氧化锌（ZnO）形成这样的层具有几个优点。根据本发明的另一方面，提供了一种包括玻璃基板的FBAR。使用玻璃形成基材提供了优于使用其它材料形成基材的几个优点。例如，大多数类型的玻璃比半导体材料便宜，并且具有低介电常数特性和低寄生电容。此外，当用于微波频率应用时，大多数玻璃材料基本上是无损的。

67. 发明授权

US06794212B2 Method and apparatus for fabricating a thin film bulk acoustic resonator 有权
标题翻译：用于制造薄膜体声波谐振器的方法和装置
公开(公告)号：US06794212B2
公开(公告)日：2004-09-21
申请号：US10180111
申请日：2002-06-27
申请人： Chwan-Ying Lee
发明人： Chwan-Ying Lee
IPC分类号： H01L2100
CPC分类号： H03H3/02 , H03H9/173 , H03H2003/021
摘要： A method for fabricating a thin film bulk acoustic resonator (FBAR) is able to simplify the conventional fabricating step. Particularly, a chamber is defined between a substrate and of the resonator without need for a polishing processes and filling processes. Therefore, the present invention is able to have a high fabricating ability, a high production rate and a short fabricating time.
摘要翻译：制造薄膜体声波谐振器（FBAR）的方法能够简化传统的制造步骤。特别地，在衬底和谐振器之间限定了腔室，而不需要抛光工艺和填充工艺。因此，本发明能够具有制造能力高，制造速度快，制造时间短的优点。

68. 发明申请

US20030193269A1 Film bulk acoustic resonator and method of forming the same 有权
标题翻译：薄膜体声波谐振器及其形成方法
公开(公告)号：US20030193269A1
公开(公告)日：2003-10-16
申请号：US10320361
申请日：2002-12-17
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Jae Wook Jang , Kuk Hyun Sunwoo
IPC分类号： H01L041/08
CPC分类号： H03H9/173 , H03H3/04 , H03H2003/021 , H03H2003/0442
摘要： A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.
摘要翻译：薄膜体声波谐振器（FBAR）包括在基板上的绝缘层，以防止信号被传输到基板。 FBAR包括对应于激活区域的膜层的一部分，以调节共振频带并提高共振频带的透射增益，膜层的部分被部分蚀刻以具有小于另一部分的厚度膜层。形成FBAR的方法包括形成由多晶硅制成的牺牲层，使用干蚀刻工艺形成气隙，并形成通孔。该方法防止了在常规气隙形成过程中发生的结构问题，并提供要控制的通孔的位置和数量。

69. 发明申请

US20030102773A1 Method for fabricating a thin film bulk acoustic wave resonator (FBAR) on a glass substrate 有权
标题翻译：在玻璃基板上制造薄膜体声波谐振器（FBAR）的方法
公开(公告)号：US20030102773A1
公开(公告)日：2003-06-05
申请号：US10278612
申请日：2002-10-22
发明人： Markku Antero Ylilammi , Meeri Talvikki Partanen
IPC分类号： H02N002/00
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165
摘要： A method for fabricating a Thin Film Bulk Acoustic Wave Resonator (FBAR). The method comprises the steps of: (A) forming a sacrificial layer comprising one of a metal and a polymer over a selected portion of a substrate; (B) forming a protective layer on the sacrificial layer and on selected portions of the substrate; (C) forming a bottom electrode layer on a selected portion of the protective layer; (D) forming a piezoelectric layer on a selected portion of the bottom electrode layer and on a selected portion of the protective layer; (E) forming a top electrode on a selected portion of the piezoelectric layer; and (F) removing the sacrificial layer to form an air gap. The use of a metal or a polymer material to form sacrificial layers has several advantages over the use of zinc-oxide (ZnO) to form such layers. In accordance with a further aspect of the invention, an FBAR is provided which includes a glass substrate. The use of glass to form substrates offers several advantages over the use of other materials to form substrates. By example, most types of glass are less expensive than semiconductor materials, and exhibit low permittivity characteristics, and low parasitic capacitances. In addition, most glass materials are substantially loss free when being used in microwave frequency applications.
摘要翻译：一种制造薄膜体声波谐振器（FBAR）的方法。该方法包括以下步骤：（A）在衬底的选定部分上形成包含金属和聚合物之一的牺牲层; （B）在所述牺牲层上和所述衬底的选定部分上形成保护层; （C）在所述保护层的选定部分上形成底部电极层; （D）在所述底电极层的选定部分和所述保护层的选定部分上形成压电层; （E）在所述压电层的选定部分上形成顶部电极; 和（F）去除牺牲层以形成气隙。使用金属或聚合物材料来形成牺牲层相比于使用氧化锌（ZnO）形成这样的层具有几个优点。根据本发明的另一方面，提供了一种包括玻璃基板的FBAR。使用玻璃形成基材提供了优于使用其它材料形成基材的几个优点。例如，大多数类型的玻璃比半导体材料便宜，并且具有低介电常数特性和低寄生电容。此外，当用于微波频率应用时，大多数玻璃材料基本上是无损的。

70. 发明申请

US20030003612A1 Method and apparatus for fabricating a thin film bulk acoustic resonator 有权
标题翻译：用于制造薄膜体声波谐振器的方法和装置
公开(公告)号：US20030003612A1
公开(公告)日：2003-01-02
申请号：US10180111
申请日：2002-06-27
发明人： Chwan-Ying Lee
IPC分类号： H01L021/00
CPC分类号： H03H3/02 , H03H9/173 , H03H2003/021
摘要： A method for fabricating a thin film bulk acoustic resonator (FBAR) is able to simplify the conventional fabricating step. Particularly, a chamber is defined between a substrate and of the resonator without need for a polishing processes and filling processes. Therefore, the present invention is able to have a high fabricating ability, a high production rate and a short fabricating time.
摘要翻译：制造薄膜体声波谐振器（FBAR）的方法能够简化传统的制造步骤。特别地，在衬底和谐振器之间限定了腔室，而不需要抛光工艺和填充工艺。因此，本发明能够具有高的制造能力，高生产率和短的制造时间。

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