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61. 发明授权

US4695857A Superlattice semiconductor having high carrier density 失效
标题翻译：具有高载流子密度的超晶格半导体
公开(公告)号：US4695857A
公开(公告)日：1987-09-22
申请号：US624333
申请日：1984-06-25
申请人： Toshio Baba , Takashi Mizutani , Masaki Ogawa
发明人： Toshio Baba , Takashi Mizutani , Masaki Ogawa
IPC分类号： H01L21/314 , H01L29/08 , H01L29/15 , H01L29/737 , H01L29/778 , H01L31/0352 , H01L33/06 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/347 , H01L29/267 , H01L29/205 , H01L29/207
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/314 , H01L29/0843 , H01L29/0891 , H01L29/152 , H01L29/155 , H01L29/7376 , H01L29/7781 , H01L29/7787 , H01L31/035236 , H01L31/035254 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/3432 , H01S5/347 , Y10S148/064 , Y10S148/065 , Y10S148/072 , Y10S148/16
摘要： The superlattice type semiconductor material has a multilayered structure of first layers of semiconductor containing impurities and having a thickness thinner than electron or hole wavelength and second layers of semiconductor free from impurities or insulator having such a thickness that electrons or holes may penetrate by tunneling effect, the first and second layers being alternately piled. Electrons or holes distribute uniformly over the entire of the multilayered structure to show a property of uniform semiconductor material.
摘要翻译：超晶格型半导体材料具有含有杂质且厚度小于电子或空穴波长的第一半导体层的半导体结构和不具有电子或空穴可以通过隧道效应渗透的杂质或绝缘体的第二半导体层，第一和第二层交替堆叠。电子或空穴在整个多层结构上均匀分布，以显示均匀的半导体材料的性质。

62. 发明申请

US20180040743A1 SEMICONDUCTOR DEVICE INCLUDING A RESONANT TUNNELING DIODE STRUCTURE WITH ELECTRON MEAN FREE PATH CONTROL LAYERS 审中-公开
公开(公告)号：US20180040743A1
公开(公告)日：2018-02-08
申请号：US15670266
申请日：2017-08-07
申请人： ATOMERA INCORPORATED
发明人： ROBERT J. MEARS , Hideki Takeuchi , Marek Hytha
IPC分类号： H01L29/88 , H01L29/861 , H01L29/66 , H01L29/15
CPC分类号： H01L29/7376 , H01L27/092 , H01L29/1054 , H01L29/152 , H01L29/155 , H01L29/157 , H01L29/161 , H01L29/36 , H01L29/66007 , H01L29/6603 , H01L29/66121 , H01L29/66151 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , H01L29/8618 , H01L29/882
摘要： A semiconductor device including at least one double-barrier resonant tunneling diode (DBRTD) is provided. The at least one DBRTD may include a first doped semiconductor layer, and a first barrier layer on the first doped semiconductor layer and including a superlattice. The DBRTD may further include a first intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the first intrinsic semiconductor layer and also including the superlattice, a second intrinsic semiconductor layer on the second barrier layer, a third barrier layer on the second intrinsic semiconductor layer and also including the superlattice. A third intrinsic semiconductor layer may be on the third barrier layer, a fourth barrier layer may be on the third intrinsic semiconductor layer and also including the superlattice, a second doped semiconductor layer on the fourth barrier layer.

63. 发明申请

US20150014630A1 TUNNELING DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：隧道装置及其制造方法
公开(公告)号：US20150014630A1
公开(公告)日：2015-01-15
申请号：US14188862
申请日：2014-02-25
申请人： Samsung Electronics Co., Ltd.
发明人： Jun-hee CHOI , Won-jong YOO , Seung-hwan LEE , Min-sup CHOI , Xiao Chi LIU , Ji-a LEE
IPC分类号： H01L29/775 , H01L29/16 , H01L29/66
CPC分类号： H01L29/1606 , H01L29/6603 , H01L29/7311 , H01L29/7376 , H01L29/88
摘要： A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer.
摘要翻译：隧道装置可以包括隧道势垒层，在隧道势垒层的第一表面上包括第一导电类型二维材料的第一材料层和在第二表面上包括第二导电类型二维材料的第二材料层的隧道势垒层。隧穿装置可以使用通过第一材料层和第二材料层之间的隧道势垒层的隧穿电流。

64. 发明申请

US20140167098A1 Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures 有权
标题翻译：量子隧穿装置和具有晶格不匹配的半导体结构的电路
公开(公告)号：US20140167098A1
公开(公告)日：2014-06-19
申请号：US14109478
申请日：2013-12-17
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L27/11
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译：结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。方法实施方案包括在晶格不匹配的材料上形成隧穿装置。

65. 发明申请

US20120309113A1 Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures 有权
标题翻译：量子隧穿装置和具有晶格不匹配的半导体结构的电路
公开(公告)号：US20120309113A1
公开(公告)日：2012-12-06
申请号：US13544661
申请日：2012-07-09
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L43/06 , H01L21/20
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译：结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。方法实施方案包括在晶格不匹配的材料上形成隧穿装置。

66. 发明申请

US20120068157A1 Transistor Having Graphene Base 有权
标题翻译：晶体管有石墨烯基
公开(公告)号：US20120068157A1
公开(公告)日：2012-03-22
申请号：US13238728
申请日：2011-09-21
申请人： Francis J. Kub
发明人： Francis J. Kub
IPC分类号： H01L29/15 , H01L29/737 , B82Y99/00
CPC分类号： H01L29/7376 , B82Y10/00 , H01L29/1004 , H01L29/157 , H01L29/1606 , H01L29/1608 , H01L29/66037 , H01L29/66068 , H01L29/7371
摘要： A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the collector. The transistor also can further include an emitter transition layer at the emitter interface with the base and/or a collector transition layer at the base interface with the collector. The electrons injected into the graphene material base layer can be “hot electrons” having an energy E substantially greater than EF, the Fermi energy in the graphene material base layer or can be “non-hot electrons” having an energy E approximately equal to than EF. The electrons can have the properties of ballistic transit through the base layer.
摘要翻译：提供具有用于将电子输送到集电器中的石墨烯基底的晶体管器件。晶体管由包含电子发射体，电子收集器和由位于发射极和集电极之间的一层或多层石墨烯组成的石墨烯材料基底层的异质结构构成。晶体管还可以在与集电极的基极界面处的基极和/或集电极过渡层的发射极接口处进一步包括发射极过渡层。注入到石墨烯材料基底层中的电子可以是具有基本上大于EF的能量E的“热电子”，石墨烯材料基底层中的费米能量或者可以是具有等于E的能量E的“非热电子” EF。电子可以具有穿过基层的弹道转运的性质。

67. 发明授权

US07875958B2 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures 有权
标题翻译：量子隧穿器件和具有晶格失配的半导体结构的电路
公开(公告)号：US07875958B2
公开(公告)日：2011-01-25
申请号：US11862850
申请日：2007-09-27
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L29/30
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译：结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。方法实施方案包括在晶格不匹配的材料上形成隧穿装置。

68. 发明申请

US20080246023A1 Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions 审中-公开
标题翻译：基于双阻挡隧道结共振隧穿效应的晶体管
公开(公告)号：US20080246023A1
公开(公告)日：2008-10-09
申请号：US11663684
申请日：2005-04-08
申请人： Zhongming Zeng , Xiufeng Han , Jiafeng Feng , Tianxing Wang , Guanxiang Du , Feifei Li , Wenshan Zhan
发明人： Zhongming Zeng , Xiufeng Han , Jiafeng Feng , Tianxing Wang , Guanxiang Du , Feifei Li , Wenshan Zhan
IPC分类号： H01L29/06 , H01L27/082
CPC分类号： H01L29/66984 , B82Y10/00 , H01L29/7376
摘要： The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm2˜10000 μm2; the thickness of the base is comparable to the electron mean free path of material in the layer; the magnetization orientation is unbounded in one and only one pole of said emitter, base and collector. Because the double-barrier structure is used, it overcomes the Schottky potential between the base and the collector. Wherein the base current is a modulating signal, the collector signal is modulated to be similar to the base current's modulating mode by changing the magnetization orientation of the base or the collector, i.e., the resonant tunneling effect occurs. An amplified signal can be obtained under the suitable conditions.
摘要翻译：本发明涉及一种基于双阻挡隧道结的谐振隧道效应的晶体管，包括：衬底，发射极，基极，集电极和第一和第二隧道势垒层; 其中所述第一隧道势垒层位于所述发射极和所述基极之间，并且所述第二隧穿势垒层位于所述基极和所述集电极之间; 此外，形成在发射极和基极之间以及基极和集电极之间的隧道结的接合面分别为1μm2〜10000μm2。基底的厚度与层中材料的电子平均自由程相当; 磁化方向在所述发射极，基极和集电极的一个且仅一个极中是无界的。因为使用双重阻挡结构，它克服了基极和集电极之间的肖特基电位。其中基极电流是调制信号，通过改变基极或集电极的磁化取向，即发生谐振隧穿效应，将集电极信号调制成与基极电流的调制模式相似。在合适的条件下可以获得放大的信号。

69. 发明申请

US20080073641A1 QUANTUM TUNNELING DEVICES AND CIRCUITS WITH LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES 有权
标题翻译：量子隧道装置和电路与狭窄的半导体结构
公开(公告)号：US20080073641A1
公开(公告)日：2008-03-27
申请号：US11862850
申请日：2007-09-27
申请人： Zhiyuan Cheng , Calvin Sheen
发明人： Zhiyuan Cheng , Calvin Sheen
IPC分类号： H01L29/88 , H01L21/329 , H01L27/06
CPC分类号： H03M1/12 , B82Y10/00 , G06F1/04 , G11C11/16 , G11C11/161 , H01L21/0237 , H01L21/02521 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02636 , H01L27/0629 , H01L27/0641 , H01L27/11 , H01L27/24 , H01L29/04 , H01L29/0895 , H01L29/122 , H01L29/267 , H01L29/36 , H01L29/7376 , H01L29/7378 , H01L29/7786 , H01L29/882 , H03K5/2427 , Y10S438/979
摘要： Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
摘要翻译：结构包括设置在第一和第二晶格失配的半导体材料上的隧道装置。方法实施方案包括在晶格不匹配的材料上形成隧穿装置。

70. 发明授权

US06929987B2 Microelectronic device fabrication method 失效
标题翻译：微电子器件制造方法
公开(公告)号：US06929987B2
公开(公告)日：2005-08-16
申请号：US10746620
申请日：2003-12-23
申请人： Jeong-Sun Moon
发明人： Jeong-Sun Moon
IPC分类号： H01L21/335 , H01L21/338 , H01L29/737
CPC分类号： H01L29/66863 , H01L29/66462 , H01L29/7376
摘要： In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the first channel, and then a metallic contact disposed on top of the ledge portion is diffused into the first channel by ohmic alloying to form an electrode in the first channel.
摘要翻译：在形成具有形成在第二沟道层的一部分上的第一沟道层的半导体器件的方法中，蚀刻第一沟道下面的第二沟道的一部分，以在第一沟道中形成悬垂凸缘，然后是布置在凸缘部分顶部的金属触头通过欧姆合金化扩散到第一通道中，以在第一通道中形成电极。

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