专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20030012984A1 Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors 审中-公开
标题翻译：用于III-V族氮化物半导体后续外延生长的缓冲层和生长方法
公开(公告)号：US20030012984A1
公开(公告)日：2003-01-16
申请号：US09904129
申请日：2001-07-11
发明人： Tetsuzo Ueda
IPC分类号： B32B009/00 , C30B023/02
CPC分类号： H01L21/0262 , C30B7/005 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02447 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/0254 , H01L21/02623
摘要： An improved epitaxial wafer and growth method of III-V nitrides (III-V compound semiconductor which contains nitrogen as a group-V element, written as InGaAlBNAsP alloy, typically GaN, AlN, InN, or ternary alloy system of two of the three) on large diameter substrates with flat surfaces and better crystal quality is provided. A III-V nitrides alloy thin film is formed by spin-coating on substrates. Liquid containing group III elements and nitrogen is spread on substrates. Then the substrate is coated with thin film from the liquid by spinning it at certain rotation speeds. The film and substrate is annealed to crystallize the spin-coated film in a gas atmosphere, where the gas atmosphere includes a gas, where the gas includes nitrogen as an element. This film is used as a buffer layer for subsequent epitaxial growth of large area III-V nitrides to obtain flat surfaces together with good crystal quality and uniformity. Oxide buffer layer such as zinc oxide, magnesium oxide, aluminum oxide is also spin-coated and annealed in a gas atmosphere in which a gas contains oxygen as an clement. III-V Nitride is overgrown on the crystallized oxide buffer layer.
摘要翻译： III-V族氮化物的改进的外延晶片和生长方法（III-V族化合物半导体，其含有氮作为V族元素，被称为InGaAlBNAsP合金，典型地为GaN，AlN，InN或三种合金中的两种的三元合金系）在具有平坦表面的大直径基材和更好的晶体质量的情况下提供。通过在基板上旋涂形成III-V族氮化物合金薄膜。含有III族元素和氮的液体扩散在基材上。然后，通过在一定的转速下旋转基板，从液体中涂覆薄膜。对膜和衬底进行退火，以在气体气氛中气旋气氛中结晶旋涂，其中气体气体包括气体，其中气体包括氮作为元素。该膜用作缓冲层，用于随后的大面积III-V氮化物的外延生长，以获得平坦的表面以及良好的晶体质量和均匀性。氧化锌，氧化镁，氧化铝等氧化物缓冲层也在气体含有氧气的气体气氛中旋涂，退火。 III-V氮化物在结晶的氧化物缓冲层上长满。

62. 发明公开

US20240332017A1 LIQUID METAL PRINTED 2D ULTRAHIGH MOBILITY CONDUCTING OXIDE TRANSISTORS 审中-公开
公开(公告)号：US20240332017A1
公开(公告)日：2024-10-03
申请号：US18579031
申请日：2022-07-14
申请人： TRUSTEES OF DARTMOUTH COLLEGE
发明人： William SCHEIDELER , Andrew HAMLIN
IPC分类号： H01L21/02 , H01L29/24 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02623 , H01L21/02565 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： In a liquid printing method, a second workpiece is applied onto a first workpiece. A metal on the second workpiece contacts a dielectric on the first workpiece thereby forming an alloyed oxide film. This can be used to form a liquid metal printed 2D alloyed oxide film transistor. The alloyed oxide film can be InOx or other materials.

63. 发明授权

US11865773B2 Additive process for circular printing of electronic devices 有权
公开(公告)号：US11865773B2
公开(公告)日：2024-01-09
申请号：US16680153
申请日：2019-11-11
申请人： Texas Instruments Incorporated
发明人： Daniel Lee Revier , Sean Ping Chang , Benjamin Stassen Cook
IPC分类号： B29C64/165 , B33Y80/00 , B33Y10/00 , B33Y70/00 , B33Y30/00 , B28B1/00 , H01L21/02 , H01L21/288 , H01L21/67 , B22F10/00 , B22F10/14 , B22F12/37 , B22F12/53 , B22F12/55 , B22F12/57 , B22F12/41 , B29L31/34 , B22F12/00 , B22F12/49
CPC分类号： B29C64/165 , B22F10/00 , B22F10/14 , B22F12/37 , B22F12/53 , B22F12/55 , B22F12/57 , B28B1/001 , B33Y10/00 , B33Y30/00 , B33Y70/00 , B33Y80/00 , H01L21/0217 , H01L21/02164 , H01L21/02288 , H01L21/02532 , H01L21/02595 , H01L21/02623 , H01L21/288 , H01L21/6715 , B22F12/226 , B22F12/41 , B22F12/49 , B29L2031/34 , B22F2999/00 , B22F10/30 , B22F12/55 , B22F12/57
摘要： A layer of additive material is formed in a circular printing area on a substrate using additive sources distributed across a printing zone. The additive sources form predetermined discrete amounts of the additive material. The substrate and the additive sources are rotated with respect to each other around a center of rotation, so that a pattern of the additive material is formed in a circular printing area on the substrate. Each additive source receives actuation waveforms at an actuation frequency that is proportional to a distance of the additive source from the center of rotation. The actuation waveforms include formation signals, with a maximum of one formation signal in each cycle of the actuation frequency. The formation signals result in the additive sources forming the predetermined discrete amounts of the additive material on the substrate.

64. 发明申请

US20180040764A1 SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY 审中-公开
公开(公告)号：US20180040764A1
公开(公告)日：2018-02-08
申请号：US15662201
申请日：2017-07-27
申请人： QMAT, Inc.
发明人： Francois J. HENLEY
IPC分类号： H01L33/00 , H01L21/324 , H01L21/683 , H01L21/265 , C23C16/34 , C30B29/06 , C30B29/36 , C30B25/18 , C30B19/12 , C23C16/02 , H01L21/02 , C30B29/40
CPC分类号： H01L33/0079 , C23C16/0209 , C23C16/0227 , C23C16/34 , C30B19/12 , C30B25/183 , C30B25/186 , C30B29/06 , C30B29/36 , C30B29/406 , H01L21/02425 , H01L21/02447 , H01L21/0245 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/0254 , H01L21/0262 , H01L21/02623 , H01L21/2654 , H01L21/3245 , H01L21/6835 , H01L21/76251 , H01L21/76254 , H01L33/007 , H01L2221/68363 , H01L2221/68368
摘要： Embodiments relate to fabricating a wafer including a thin, high-quality single crystal GaN layer serving as a template for formation of additional GaN material. A bulk ingot of GaN material is subjected to implantation to form a subsurface cleave region. The implanted bulk material is bonded to a substrate having lattice and/or Coefficient of Thermal Expansion (CTE) properties compatible with GaN. Examples of such substrate materials can include but are not limited to AlN and Mullite. The GaN seed layer is transferred by a controlled cleaving process from the implanted bulk material to the substrate surface. The resulting combination of the substrate and the GaN seed layer, can form a template for subsequent growth of overlying high quality GaN. Growth of high-quality GaN can take place utilizing techniques such as Liquid Phase Epitaxy (LPE) or gas phase epitaxy, e.g., Metallo-Organic Chemical Vapor Deposition (MOCVD) or Hydride Vapor Phase Epitaxy (HVPE).

65. 发明授权

US09859442B2 Metal oxide semiconductor layer forming composition, and method for producing metal oxide semiconductor layer using same 有权
公开(公告)号：US09859442B2
公开(公告)日：2018-01-02
申请号：US15325842
申请日：2015-07-14
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Shinichi Maeda
IPC分类号： C01G15/00 , H01L29/786 , C09D5/24 , C09D1/00 , H01L21/02 , H01L29/66 , H01L29/24
CPC分类号： H01L29/7869 , C01G15/00 , C01P2006/40 , C09D1/00 , C09D5/24 , H01L21/02565 , H01L21/02623 , H01L21/02664 , H01L29/24 , H01L29/66969
摘要： The invention provides a metal oxide semiconductor layer forming composition containing a solvent represented by formula [1]: (wherein R1 represents a C2 to C3 linear or branched alkylene group, and R2 represents a C1 to C3 linear or branched alkyl group) and an inorganic metal salt.

66. 发明申请

US20170309731A1 SEPARATION METHOD AND MANUFACTURING METHOD OF FLEXIBLE DEVICE 审中-公开
公开(公告)号：US20170309731A1
公开(公告)日：2017-10-26
申请号：US15486545
申请日：2017-04-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Junpei YANAKA , Seiji YASUMOTO , Masakatsu OHNO , Hiroki ADACHI
IPC分类号： H01L29/66 , H01L21/02 , H01L21/311
CPC分类号： H01L29/66969 , H01L21/02532 , H01L21/02609 , H01L21/02623 , H01L21/31116
摘要： A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 μm or more and 3 μm or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.

67. 发明申请

US20170110328A1 POLYMER, ORGANIC LAYER COMPOSITION, AND METHOD OF FORMING PATTERNS 审中-公开
公开(公告)号：US20170110328A1
公开(公告)日：2017-04-20
申请号：US15264664
申请日：2016-09-14
申请人： SAMSUNG SDI CO., LTD.
发明人： Hyo Young KWON , Ran NAMGUNG , Dominea RATHWELL , Hyeonil JUNG
IPC分类号： H01L21/308 , H01L21/027 , H01L21/324 , H01L21/306 , C08G73/06 , G03F7/11 , C08G75/32 , G03F7/20 , G03F7/30 , G03F7/16 , G03F7/039 , G03F7/00 , H01L21/02 , C08G73/22
CPC分类号： H01L21/3081 , C08G14/02 , C08G14/04 , C08G14/06 , C08G73/0672 , C08G73/18 , C08G73/22 , C08G75/32 , C09D161/34 , C09D179/04 , G03F7/0035 , G03F7/0392 , G03F7/11 , G03F7/168 , G03F7/20 , G03F7/30 , H01L21/02532 , H01L21/02623 , H01L21/0274 , H01L21/0276 , H01L21/0332 , H01L21/30604 , H01L21/3085 , H01L21/324
摘要： A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1:

68. 发明授权

US09502502B2 Semiconductor devices and methods of manufacture thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09502502B2
公开(公告)日：2016-11-22
申请号：US14658719
申请日：2015-03-16
申请人： Taiwan Semiconductor Manufacturing Company, Ltd. , National Chiao Tung University
发明人： Samuel C. Pan , Chao-Hsin Chien , Chen-Han Chou
IPC分类号： H01L21/00 , H01L29/00 , H01L29/08 , H01L21/02 , H01L29/06 , H01L29/66 , H01L21/308 , H01L29/78
CPC分类号： H01L29/0847 , H01L21/0206 , H01L21/02274 , H01L21/0257 , H01L21/02623 , H01L21/02631 , H01L21/02636 , H01L21/308 , H01L29/0653 , H01L29/66545 , H01L29/66568 , H01L29/66795 , H01L29/78 , H01L29/7851
摘要： Semiconductor devices and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a semiconductor device may include: patterning a substrate to have a first region and a second region extending from the first region of the substrate; depositing an isolation layer over a surface of the first region of the substrate; and epitaxially forming source/drain regions over the isolation layer and adjacent to sidewalls of the second region of the substrate.
摘要翻译：描述半导体器件及其制造方法。在一个实施例中，制造半导体器件的方法可以包括：图案化衬底以具有从衬底的第一区域延伸的第一区域和第二区域; 在衬底的第一区域的表面上沉积隔离层; 并且在所述隔离层上并且邻近所述衬底的第二区域的侧壁外延形成源极/漏极区域。

69. 发明授权

US09478708B2 Embedded gallium—nitride in silicon 有权
标题翻译：硅中嵌入氮化镓
公开(公告)号：US09478708B2
公开(公告)日：2016-10-25
申请号：US14644393
申请日：2015-03-11
申请人： International Business Machines Corporation
发明人： William J. Gallagher , Effendi Leobandung , Devendra K. Sadana , Ghavam G. Shahidi
IPC分类号： H01L21/00 , H01L33/32 , H01L21/762 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L33/00
CPC分类号： H01L21/02694 , H01L21/02002 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L21/0332 , H01L21/3065 , H01L21/3083 , H01L21/31116 , H01L21/47573 , H01L21/76283 , H01L33/0025 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/20 , H01L33/32
摘要： A method and structure for integrating gallium nitride into a semiconductor substrate. The method may also include means for isolating the gallium nitride from the semiconductor substrate.
摘要翻译：一种将氮化镓整合到半导体衬底中的方法和结构。该方法还可以包括用于从半导体衬底隔离氮化镓的装置。

70. 发明申请

US20160293415A1 ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER WAFER FOR MAKING IT 有权
标题翻译：使用III类氮化物半导体的电子器件及其制造方法和外延多层波导制造
公开(公告)号：US20160293415A1
公开(公告)日：2016-10-06
申请号：US14460065
申请日：2014-08-14
申请人： SIXPOINT MATERIALS, INC. , Seoul Semiconductor Co., Ltd
发明人： TADAO HASHIMOTO
IPC分类号： H01L21/02 , H01L29/778 , H01L29/205 , H01L29/32 , H01L29/66 , H01L29/20
CPC分类号： H01L21/0254 , C23C16/303 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02584 , H01L21/0262 , H01L21/02623 , H01L21/02694 , H01L29/0646 , H01L29/0653 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/32 , H01L29/41766 , H01L29/66462 , H01L29/7784 , H01L29/7828 , H01L29/8122 , H01L29/8611 , H01L29/872
摘要： The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
摘要翻译：本发明公开了一种使用通过氨热法制造的III族氮化物衬底的电子器件。通过利用具有位错密度小于105cm -2的氨基生长的基底的高电子浓度，结合Ga1-x-yAlxInyN（0≤x≤1,0≤y≤1）的高纯度有源层生长通过气相法，器件可以获得高电平的击穿电压以及低导通电阻。为了实现氨热生长的基底和高纯度活性层之间的良好匹配，任选地引入过渡层。有源层比由有源层中的器件结构产生的耗尽区厚。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式