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    • 63. 发明申请
    • Low-Rate Inexpensive Digital Gamma-Ray Imaging/Inspection System
    • 低价廉价数字伽玛射线成像/检测系统
    • US20160084967A1
    • 2016-03-24
    • US14493982
    • 2014-09-23
    • Sharpxview AS
    • Einar NYGARD
    • G01T1/20G01N23/04G01T1/202G01T1/208
    • G01T1/2018G01N23/04G01N23/18G01N2223/202G01N2223/301G01N2223/3303G01N2223/628G01N2223/646G01T1/202G01T1/208G01T7/00
    • A γ-ray scanner includes a Solid-State Single-Photon Detector (“SSSPD”) and a γ-ray source, which may be a radioisotope such as Americium oxide (Am-241) that may not require certification since it has a low intensity that is safe even over extended periods of exposure to a human body. The γ-ray scanner may be used for monitoring a fixed object such as a pipe and includes an imaging assembly having a stationary annular gantry surrounding the pipe and an armature that fixedly supports the γ-source and the detector in mutual opposed alignment, so that they are constrained to move together. The armature rides around an inside periphery of the gantry, while the armature or the gantry moves laterally in a direction parallel to a rotation axis of the armature so as to move the γ-ray beam around and along the pipe.
    • γ射线扫描仪包括固体单光子检测器(“SSSPD”)和γ射线源,其可以是可能不需要认证的放射性同位素,例如氧化oxide(Am-241),因为它具有低的 强度即使在长时间暴露于人体时也是安全的。 γ射线扫描器可以用于监测诸如管道的固定物体,并且包括具有围绕管的固定环形龙门架的成像组件和以相互对准的方式固定地支撑γ源和检测器的电枢,使得 它们被限制在一起移动。 电枢围绕台架的内周围,同时电枢或龙门架沿与电枢的旋转轴线平行的方向横向移动,以使γ射线束沿着管道移动。
    • 65. 发明申请
    • X-ray fluorescence analysis of thin-film coverage defects
    • 薄膜覆盖缺陷的X射线荧光分析
    • US20150185170A1
    • 2015-07-02
    • US14140709
    • 2013-12-26
    • Intermolecular Inc.
    • Edwin Adhiprakasha
    • G01N23/22C23F1/30C03C15/00
    • G01N23/22B24B37/013C03C15/00C23F1/00G01N23/223G01N2223/61G01N2223/646H01L22/12H01L22/26
    • X-ray fluorescence (XRF) monitoring of characteristic peaks while etching thin-film layers can reveal coverage defects and thickness nonuniformity in the top film. To measure coverage and uniformity while screening candidate layer materials and processes, the candidate layers may be formed above an underlayer of a different composition. A wet etchant that selectively etches the underlayer faster than the candidate layer is applied to the candidate layer, and the XRF spectrum is monitored. Pinholes, cracks, islands, and nonuniform thickness in the candidate layer produce characteristic features in the time-dependent behavior of XRF peaks from the underlayer and/or the candidate layer. “Etch/XRF” tests can be used to rapidly and objectively identify the most uniform contiguous candidate layers to advance to further screening or production. XRF may also be calibrated against a known thickness indicator to detect the approach of a desired endpoint in an etch process.
    • 蚀刻薄膜层时的特征峰的X射线荧光(XRF)监测可以揭示顶膜的覆盖缺陷和厚度不均匀性。 为了在筛选候选层材料和工艺的同时测量覆盖率和均匀性,候选层可以形成在不同组成的底层之上。 将候选层选择性地蚀刻底层的湿蚀刻剂施加到候选层,并且监测XRF谱。 候选层中的针孔,裂纹,岛和不均匀厚度在底层和/或候选层的XRF峰的时间依赖性行为中产生特征。 “Etch / XRF”测试可用于快速和客观地识别最均匀的连续候选层,以进一步筛选或生产。 XRF也可以针对已知的厚度指示器进行校准,以在蚀刻过程中检测所需端点的接近。