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61. 发明申请

US20140023796A1 PLASMA CVD APPARATUS, PLASMA CVD METHOD, REACTIVE SPUTTERING APPARATUS, AND REACTIVE SPUTTERING METHOD 审中-公开
标题翻译：等离子体CVD装置，等离子体CVD方法，反应溅射装置和反应溅射方法
公开(公告)号：US20140023796A1
公开(公告)日：2014-01-23
申请号：US14007519
申请日：2012-02-14
申请人： Hiroe Ejiri , Keitaro Sakamoto , Fumiyasu Nomura , Masanori Ueda
发明人： Hiroe Ejiri , Keitaro Sakamoto , Fumiyasu Nomura , Masanori Ueda
IPC分类号： C23C14/00 , C23C16/455
CPC分类号： C23C14/0063 , C23C14/0068 , C23C14/562 , C23C16/401 , C23C16/402 , C23C16/455 , C23C16/45517 , C23C16/50 , C23C16/545 , H01J37/32559 , H01J37/32568 , H01J37/32752 , H01J37/3277 , H01J37/3405 , H01J37/3417 , H01J2237/3321 , H01J2237/3325
摘要： A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate.
摘要翻译：一种等离子体CVD装置，其特征在于，在所述真空室中具有真空室，主辊和等离子体产生电极，其特征在于，在沿着所述主辊的表面输送的长基板的表面上形成有薄膜。在长基板的纵向上的上游侧和下游侧设置有沿长基板的横向延伸的至少一个侧壁，并且侧壁围绕主辊与等离子体产生电极之间的成膜空间。侧壁与等离子体产生电极电绝缘。在长基板的机器方向上的上游侧或下游侧的侧壁设置有由长基板的横向排列的供气孔形成的气体供给孔的至少一个原料。

62. 发明申请

US20130344240A1 DEPOSITION OF ULTRA-THIN INORGANIC OXIDE COATINGS ON PACKAGING 有权
公开(公告)号：US20130344240A1
公开(公告)日：2013-12-26
申请号：US13923899
申请日：2013-06-21
申请人： FRITO-LAY NORTH AMERICA, INC.
发明人： Robert GODFROID , Glenn JORDAN , Anthony Robert KNOERZER , Kenneth Scott LAVERDURE , Eldridge M. MOUNT, III
IPC分类号： B65D65/42
CPC分类号： B65D65/42 , C23C16/02 , C23C16/0218 , C23C16/0272 , C23C16/401 , C23C16/403 , C23C16/463 , C23C16/513 , C23C16/545 , C23C16/56
摘要： An apparatus and method for depositing an ultra-thin inorganic coating on to a packaging film substrate is disclosed. Flame pretreatment enhances the quality of the inorganic coating. Multiple coating layers may be deposited onto the substrate by passing the substrate over various one or more flame head configurations in either a stand-alone or in-line manufacturing environment.

63. 发明申请

US20130323436A1 PROCESS FOR PRODUCING MULTILAYERED GAS-BARRIER FILM 审中-公开
标题翻译：生产多层气体阻隔膜的方法
公开(公告)号：US20130323436A1
公开(公告)日：2013-12-05
申请号：US13963227
申请日：2013-08-09
申请人： MITSUBISHI PLASTICS, INC.
发明人： Shigenobu YOSHIDA , Chiharu Okawara , Kota Ozeki
IPC分类号： C09D5/00
CPC分类号： C09D5/00 , B05D1/62 , B05D7/56 , B05D2252/02 , B05D2350/60 , C23C14/10 , C23C14/562 , C23C16/401 , C23C16/545 , C23C28/00
摘要： Provided are a method for producing a film, which is satisfactory in productivity, exhibits high gas-barrier property immediately after production, and has excellent adhesive strength between constituent layers while maintaining the excellent gas-barrier property, and a gas-barrier film, which is obtained by the method. The method for producing a gas-barrier film includes the steps of: (1) forming an inorganic thin film by a vacuum deposition method on at least one surface of a base film; (2) forming a thin film by a plasma CVD method on the inorganic thin film formed in the step (1); and (3) forming an inorganic thin film by the vacuum deposition method on the thin film formed in the step (2), in which each of the steps (1) and (3), and the step (2) are sequentially carried out at a pressure of 1×10−7 to 1 Pa, and at a pressure of 1×10−3 to 1×102 Pa, respectively.
摘要翻译：本发明提供一种膜的制造方法，其生产率良好，生产后立即显示出高的阻气性，并且在保持优异的阻气性的同时具有优异的组成层之间的粘合强度和阻气膜，通过该方法获得。制造阻气膜的方法包括以下步骤：（1）通过真空沉积法在基膜的至少一个表面上形成无机薄膜; （2）在步骤（1）中形成的无机薄膜上通过等离子体CVD法形成薄膜; 和（3）通过真空沉积法在步骤（2）中形成的薄膜上形成无机薄膜，其中步骤（1）和（3）和步骤（2）中的每一个依次进行压力为1×10-7〜1Pa，压力为1×10-3〜1×102Pa。

64. 发明授权

US08529700B2 Apparatus for gaseous vapor deposition 失效
标题翻译：气相沉积装置
公开(公告)号：US08529700B2
公开(公告)日：2013-09-10
申请号：US12550832
申请日：2009-08-31
申请人： Peter Francis Carcia , Richard Dale Kinard , Robert Scott McLean , Geoffrey Nunes , Kirstin H. Shilkitus
发明人： Peter Francis Carcia , Richard Dale Kinard , Robert Scott McLean , Geoffrey Nunes , Kirstin H. Shilkitus
IPC分类号： C23C16/00
CPC分类号： C23C16/545 , B33Y80/00 , B65H18/00 , B65H2301/51145 , B65H2801/87 , C23C16/45506 , C23C16/45544 , C23C16/45582 , C23C16/45591 , C23C16/458
摘要： A vapor deposition apparatus includes an insert within which a material is deposited on the surface of a film. A cassette includes end plates each having a rib that edgewise receive a spiral wrapping of a film at least 300 mm wide. Spaces between turns of the wrapping define a gas flow channel and spaces between adjacent turns of one rib define inlet openings that communicate with the channel. Each rib has a predetermined width dimension, a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The spacing between end plates is at least 300 mm and is also greater than the film width at deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the end plate spacing. A diverging flow director contacts one end plate to directing gaseous fluid toward the inlet openings in that end plate.
摘要翻译：气相沉积设备包括一个插入件，材料沉积在薄膜的表面上。盒式磁带包括端板，每个端板具有边缘，其沿边缘容纳至少300mm宽的膜的螺旋卷绕。包裹圈之间的空间限定了气体流动通道，并且一个肋的相邻匝之间的间隔限定了与通道连通的入口开口。每个肋具有至少2:1的预定宽度尺寸，预定平均厚度尺寸和宽至厚纵横比。端板之间的间距至少为300mm，并且也大于沉积温度下的膜宽度。每个肋的宽度尺寸在端板间距的约0.5％至约2.0％之间。分流导流器接触一个端板以将气态流体引向该端板中的入口开口。

65. 发明申请

US20130164452A1 APPARATUS AND METHOD FOR COATING GLASS SUBSTRATE 审中-公开
标题翻译：涂层玻璃基材的设备和方法
公开(公告)号：US20130164452A1
公开(公告)日：2013-06-27
申请号：US13702505
申请日：2010-06-21
申请人： Markku Rajala , Kauko Janka , Sami Kauppinen , Anssi Hovinen
发明人： Markku Rajala , Kauko Janka , Sami Kauppinen , Anssi Hovinen
IPC分类号： C03C17/00
CPC分类号： C23C16/4486 , B05B5/005 , B05B5/03 , B05B5/043 , C03C17/002 , C23C16/452 , C23C16/545
摘要： A method and apparatus for coating a substrate using one or more liquid starting materials. The substrate is coated by atomizing one or more liquid starting materials into droplets and vaporizing the droplets in a deposition chamber for before the starting materials react on the surface of the substrate. The droplets are guided towards the substrate with electrical forces before the droplets are vaporized.
摘要翻译：一种使用一种或多种液体起始材料涂覆基材的方法和设备。通过将一种或多种液体起始材料雾化成液滴并使沉积室中的液滴蒸发来涂覆基底，以使起始材料在基底表面上反应。在液滴蒸发之前，液滴通过电力引向基板。

66. 发明申请

US20130157062A1 LAMINATE AND PROCESS FOR PRODUCING LAMINATE 审中-公开
标题翻译：层压板和生产层压板的方法
公开(公告)号：US20130157062A1
公开(公告)日：2013-06-20
申请号：US13765171
申请日：2013-02-12
申请人： Asahi Glass Company, Limited
发明人： Naoto KIHARA , Takuya NAKAO
IPC分类号： C23C16/44 , C23C16/32 , C23C16/34 , H01L31/0203 , C23C16/40
CPC分类号： C23C16/44 , C23C16/308 , C23C16/32 , C23C16/325 , C23C16/34 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/403 , C23C16/545 , H01L31/0203 , H01L31/0481 , Y02E10/50 , Y10T428/3154
摘要： Provision of a laminate excellent in weather resistance and gas barrier property and also excellent in adhesion between layers and its durability; and a process for producing such a laminate.A laminate which comprises a substrate sheet containing a fluororesin, and a gas barrier layer containing, as the main component, an inorganic compound composed of a metal and at least one member selected from the group consisting of oxygen, nitrogen and carbon, the gas barrier layer being directly laminated on at least one surface of the substrate sheet; wherein in a C1s spectrum of a surface of the substrate sheet on which the gas barrier layer is laminated, that is measured by X-ray photoelectron spectroscopy, the position of the highest peak present within a binding energy range of from 289 to 291 eV is present within a range of from 290.1 to 290.6 eV.
摘要翻译：提供耐候性和阻气性优异且层间粘合性优异的层压材料及其耐久性; 以及这种层压体的制造方法。一种层压体，其包含含有氟树脂的基材片和阻气层，所述阻气层含有由金属构成的无机化合物和选自氧，氮和碳的至少一种，所述阻气层层直接层压在基片的至少一个表面上; 其中，通过X射线光电子能谱法测定层叠有阻气层的基板的表面的C1s光谱，存在于289〜291eV的结合能范围内的最高峰的位置为存在于290.1至290.6eV的范围内。

67. 发明申请

US20130089665A1 SELF-LIMITING REACTION DEPOSITION APPARATUS AND SELF-LIMITING REACTION DEPOSITION METHOD 审中-公开
标题翻译：自限制反应沉积装置和自限制反应沉积方法
公开(公告)号：US20130089665A1
公开(公告)日：2013-04-11
申请号：US13615737
申请日：2012-09-14
申请人： Hiroya Takenaka , Ryoichi Hiratsuka , Masaaki Sekine , Takuji Matsuo , Hidetoshi Honda
发明人： Hiroya Takenaka , Ryoichi Hiratsuka , Masaaki Sekine , Takuji Matsuo , Hidetoshi Honda
IPC分类号： C23C16/54 , C23C16/46 , C23C16/458
CPC分类号： C23C16/45551 , C23C16/545
摘要： A self-limiting reaction deposition apparatus includes a first guide roller, a second guide roller, and at least one first head. The first guide roller changes, while supporting a first surface of a base material conveyed by a roll-to-roll process, a conveying direction of the base material from a first direction to a second direction that is not parallel to the first direction. The second guide roller changes, while supporting the first surface of the base material, the conveying direction of the base material from the second direction to a third direction that is not parallel to the second direction. The at least one first head is disposed between the first guide roller and the second guide roller, faces a second surface opposite to the first surface of the base material, and discharges, towards the second surface, a raw material gas for self-limiting reaction deposition.
摘要翻译：自限制反应沉积设备包括第一引导辊，第二引导辊和至少一个第一头。第一引导辊在支撑通过卷绕处理传送的基材的第一表面的同时，改变基材从第一方向到不与第一方向平行的第二方向的输送方向。第二引导辊在支撑基材的第一表面的同时，改变基材从第二方向到不与第二方向平行的第三方向的输送方向。所述至少一个第一头设置在所述第一引导辊和所述第二引导辊之间，面向与所述基材的第一表面相对的第二表面，并且朝向所述第二表面排出用于自限制反应的原料气体沉积

68. 发明申请

US20130064978A1 VACUUM ROLL-TO-ROLL DEVICE AND MANUFACTURING METHOD FOR ROLL-TYPE SUBSTRATE 有权
标题翻译：真空辊轧辊装置及其制造方法
公开(公告)号：US20130064978A1
公开(公告)日：2013-03-14
申请号：US13435626
申请日：2012-03-30
申请人： Sang-Mi KIM , Gug Rae JO , Jae Hyuk CHANG , Seung-Jun LEE , Seung-Min LEE , Dae-Young LEE , Ki-Beom LEE
发明人： Sang-Mi KIM , Gug Rae JO , Jae Hyuk CHANG , Seung-Jun LEE , Seung-Min LEE , Dae-Young LEE , Ki-Beom LEE
IPC分类号： B05D3/12 , B65H18/08 , B65H35/02
CPC分类号： B65H18/103 , B01J3/02 , B01J3/03 , B05C11/115 , B65H2301/41487 , B65H2801/61 , C23C14/562 , C23C14/564 , C23C14/568 , C23C16/545 , D06B23/18
摘要： A vacuum roll-to-roll device includes: a first chamber; a second chamber neighboring the first chamber; a shutter disposed between the first chamber and the second chamber; a sealing member attached to the shutter; and a roll-type substrate which moves from the first chamber to the second chamber through the sealing member. A thickness of a lateral side of the roll-type substrate decreases in a direction toward an edge thereof.
摘要翻译：真空卷对卷装置包括：第一室; 邻近第一室的第二室; 设置在所述第一室和所述第二室之间的快门; 附接到所述活门的密封构件; 以及通过密封构件从第一室移动到第二室的辊型基板。辊型基板的侧面的厚度在朝向其边缘的方向上减小。

69. 发明申请

US20130034689A1 Inorganic Nanocoating Primed Organic Film 审中-公开
标题翻译：无机纳米化有机底漆
公开(公告)号：US20130034689A1
公开(公告)日：2013-02-07
申请号：US13204523
申请日：2011-08-05
申请人： Andrew Tye Hunt , Yongdong Jiang
发明人： Andrew Tye Hunt , Yongdong Jiang
IPC分类号： B32B3/00 , B32B9/04 , B32B7/02 , B32B27/36 , B32B27/00
CPC分类号： B32B27/08 , B32B27/281 , B32B27/302 , B32B27/32 , B32B27/36 , B32B2250/24 , B32B2255/10 , B32B2255/20 , B32B2307/716 , B32B2307/7242 , B32B2439/00 , C23C14/02 , C23C14/024 , C23C14/20 , C23C14/562 , C23C16/0209 , C23C16/402 , C23C16/453 , C23C16/545 , C23C16/56 , C23C28/322 , C23C28/345 , Y10T428/24355 , Y10T428/2495 , Y10T428/265 , Y10T428/31721 , Y10T428/31786 , Y10T428/31855
摘要： An inorganic nanolayer surface coated polymer film product is disclosed with enhancements such as improved metallization capability, low cost, low polymer additives and modifiers, improved recyclability, and good web properties. Also method for priming a flexible film substrate to enhance the reactivity or wettability of the substrate for metallization is disclosed. A substrate film is coated with one or more nanolayers of a metal or metal oxide applied by CCVD and/or PECVD at open atmosphere. The deposited coating acts to enhance the surface energy of the film substrate and to and reduce the surface gauge variation of the substrate or supporting film, thereby enhancing the wettability of the film substrate for metallization and/or to improve the anti-block characteristics of the film. The deposited coatings may also act as a barrier layer for lowering the permeability of light, gas and vapor transmission through the substrate.
摘要翻译：公开了无机纳米层表面涂覆的聚合物膜产品，其具有改进的金属化能力，低成本，低聚合物添加剂和改性剂，改善的可循环性和良好的网性能。公开了一种用于引发柔性膜基底以提高用于金属化的基底的反应性或润湿性的方法。在敞开的气氛下，用一个或多个通过CCVD和/或PECVD施加的金属或金属氧化物的纳米层涂覆基底膜。沉积的涂层用于增强膜基材的表面能，并降低基材或支撑膜的表面规格变化，从而提高用于金属化的膜基材的润湿性和/或改善薄膜基材的抗块特性电影。沉积的涂层还可以用作阻挡层，用于降低通过基底的光，气体和蒸气透过率的渗透性。

70. 发明授权

US08368075B2 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US08368075B2
公开(公告)日：2013-02-05
申请号：US12946224
申请日：2010-11-15
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L21/0262 , C23C16/509 , C23C16/545 , H01J37/32091 , H01J37/32165 , H01J37/32541 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02661 , H01L21/67207 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： As an electrode area of a plasma CVD apparatus is enlarged, influence of the surface standing wave remarkably appears, and there is a problem in that in-plane uniformity of quality and a thickness of a thin film formed over a glass substrate is degraded. Two or more high-frequency electric powers with different frequencies are supplied to an electrode for producing glow discharge plasma in a reaction chamber. With glow discharge plasma produced by supplying the high-frequency electric powers with different frequencies, a semiconductor thin film or an insulating thin film is formed. High-frequency electric powers with different frequencies (different wavelengths), which are superimposed on each other, are applied to an electrode in a plasma CVD apparatus, so that increase in plasma density and uniformity for preventing effect of surface standing wave of plasma are attained.
摘要翻译：随着等离子体CVD装置的电极面积的扩大，表面驻波的影响显着地出现，并且存在质量的面内均匀性和在玻璃基板上形成的薄膜的厚度劣化的问题。将两个以上的具有不同频率的高频电力供给到用于在反应室中产生辉光放电等离子体的电极。通过以不同的频率供给高频电力产生的辉光放电等离子体，形成半导体薄膜或绝缘薄膜。在等离子体CVD装置中的电极上施加具有彼此叠加的不同频率（不同波长）的高频电力，从而获得等离子体密度和均匀性的增加，以防止等离子体表面驻波的影响。

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