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61. 发明申请

US20100243913A1 PRE-ALIGNED NOZZLE/SKIMMER 审中-公开
标题翻译：预对准喷嘴/ SKIMMER
公开(公告)号：US20100243913A1
公开(公告)日：2010-09-30
申请号：US12415883
申请日：2009-03-31
申请人： Robert K. Becker , Avrum Freytsis
发明人： Robert K. Becker , Avrum Freytsis
IPC分类号： H01J27/00 , G21K1/00 , A61N5/00
CPC分类号： H01J37/3002 , G21K2201/00 , H01J37/08 , H01J37/30 , H01J2237/006 , H01J2237/061 , H01J2237/0812 , Y10T29/49769 , Y10T29/49826
摘要： The pre-aligned nozzle/skimmer module includes an internal pre-aligned nozzle assembly and internal pre-aligned skimmer cartridge assembly to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module can be pre-aligned to more accurately position the GCIB. The pre-aligned nozzle/skimmer module more accurately controls the formation of the gas clusters of a pre-aligned Gas Cluster Ion Beam (GCIB).
摘要翻译：预对准喷嘴/分离器模块包括内部预对准喷嘴组件和内部预对准撇渣器组件，以更精确地控制气体聚簇离子束（GCIB）的形成。喷嘴/撇渣器模块可以进行预对准，以更精确地定位GCIB。预对齐喷嘴/分离器模块更精确地控制预对准气体簇离子束（GCIB）的气体簇的形成。

62. 发明申请

US20100200946A1 Method for forming trench isolation using a gas cluster ion beam growth process 有权
标题翻译：使用气体团簇离子束生长过程形成沟槽隔离的方法
公开(公告)号：US20100200946A1
公开(公告)日：2010-08-12
申请号：US12367697
申请日：2009-02-09
申请人： John J. Hautala
发明人： John J. Hautala
IPC分类号： H01L27/04 , H01L21/762
CPC分类号： H01L21/76224 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02321 , H01L21/31608
摘要： A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by growing a dielectric layer in at least one region on the substrate.
摘要翻译：描述了使用气体簇离子束（GCIB）在衬底上形成浅沟槽隔离的方法。该方法包括生成GCIB，并且通过在衬底上的至少一个区域中生长介电层，通过GCIB照射衬底以形成浅沟槽隔离结构。

63. 发明申请

US20100193708A1 METHOD OF FORMING TRENCH ISOLATION USING A MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESS 有权
标题翻译：使用多个喷嘴气体聚集体离子束工艺形成热分离的方法
公开(公告)号：US20100193708A1
公开(公告)日：2010-08-05
申请号：US12428973
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： A61N5/00
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
摘要翻译：公开了使用多喷嘴和撇渣器组件在基底上生长，改性，沉积或掺杂层的操作方法，用于在气体簇离子束（GCIB）系统中引入工艺气体混合物或多种工艺气体混合物。还公开了一种在衬底上形成浅沟槽隔离（STI）结构的方法，例如使用具有两个单独气体供应的多喷嘴系统的SiO 2 STI结构，例如提供含硅气体和含氧气体，含气。

64. 发明授权

US07696495B2 Method and device for adjusting a beam property in a gas cluster ion beam system 有权
标题翻译：用于调整气体簇离子束系统中的束特性的方法和装置
公开(公告)号：US07696495B2
公开(公告)日：2010-04-13
申请号：US11864302
申请日：2007-09-28
申请人： Michael E. Mack , Yan Shao
发明人： Michael E. Mack , Yan Shao
IPC分类号： H01J37/317 , H01J37/08
CPC分类号： H01J37/08 , H01J37/305 , H01J2237/045 , H01J2237/061 , H01J2237/0812 , H01J2237/083
摘要： A method and device for adjusting a beam property, such as a beam size, a beam shape or a beam divergence angle, in a gas cluster beam prior to ionization of the gas cluster beam is described. A gas cluster ion beam (GCIB) source is provided, comprising a nozzle assembly having a gas source, a stagnation chamber and a nozzle that is configured to introduce under high pressure one or more gases through the nozzle to a vacuum vessel in order to produce a gas cluster beam. Additionally, the GCIB source comprises a gas skimmer positioned downstream from the nozzle assembly that is configured to reduce the number of energetic, smaller particles in the gas cluster beam. Furthermore, the GCIB source comprises a beam adjustment device positioned downstream from the gas skimmer that is configured to adjust at least one beam property of the gas cluster beam, and an ionizer positioned downstream from the beam adjustment device that is configured to ionize the gas cluster beam to produce a GCIB.
摘要翻译：描述了在气体簇束离子化之前在气体簇束中调整光束特性（诸如光束大小，光束形状或光束发散角）的方法和装置。提供了一种气体簇离子束（GCIB）源，其包括具有气体源，停滞室和喷嘴的喷嘴组件，其构造成在高压下将一种或多种气体通过喷嘴引入真空容器以产生气体束束。另外，GCIB源包括位于喷嘴组件下游的气体分离器，该气体分离器构造成减少气体簇束中能量较小的颗粒的数量。此外，GCIB源包括位于气体分离器下游的光束调节装置，其配置成调整气体束束的至少一个光束特性，以及位于光束调节装置的下游的离子发生器，该离子发生器配置成电离气体团光束产生GCIB。

65. 发明申请

US20100072393A1 SELF-BIASING ACTIVE LOAD CIRCUIT AND RELATED POWER SUPPLY FOR USE IN A CHARGED PARTICLE BEAM PROCESSING SYSTEM 有权
标题翻译：自偏置有源负载电路和相关电源供充电颗粒光束处理系统
公开(公告)号：US20100072393A1
公开(公告)日：2010-03-25
申请号：US12235874
申请日：2008-09-23
申请人： Kenneth P. Regan
发明人： Kenneth P. Regan
IPC分类号： H01J27/00 , H02M3/156
CPC分类号： H01J27/022 , H01J2237/0812 , Y10T307/406
摘要： A load circuit device having a self-biasing active load circuit, and a related high voltage power supply configured to bias an optical element in a charged particle beam processing system, such as a gas cluster ion beam (GCIB) processing system. The high voltage power supply comprises a variable voltage supply having a load terminal at a load potential and a reference terminal at a reference potential, and a self-biasing active load circuit connected between the load terminal and the reference terminal, and configured to sustain a variable voltage drop between the load potential and the reference potential while maintaining a substantially constant current.
摘要翻译：一种具有自偏置有源负载电路的负载电路装置和被配置为偏置诸如气体簇离子束（GCIB）处理系统的带电粒子束处理系统中的光学元件的相关高压电源。高电压电源包括具有负载电位的负载端子和参考电位的参考端子的可变电压电源，以及连接在负载端子和参考端子之间的自偏置有源负载电路，并且被配置为维持在保持基本上恒定的电流的同时，负载电位和参考电位之间的可变电压降。

66. 发明授权

US07626183B2 Methods for modifying features of a workpiece using a gas cluster ion beam 有权
标题翻译：使用气体团簇离子束改变工件特征的方法
公开(公告)号：US07626183B2
公开(公告)日：2009-12-01
申请号：US11850423
申请日：2007-09-05
申请人： Reinhard Wagner , Wesley Skinner
发明人： Reinhard Wagner , Wesley Skinner
IPC分类号： G21K5/04 , G21K5/10
CPC分类号： H01J37/3053 , H01J37/302 , H01J2237/0812 , H01J2237/30461 , H01L21/2633 , H01L21/28123 , H01L21/3065 , H01L22/12 , H01L22/14 , H01L22/20 , H01L27/1087 , H01L29/66181
摘要： Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.
摘要翻译：这里通常描述使用气体簇离子束改变工件上的表面特征的方法的实施例。可以描述和要求保护其他实施例。

67. 发明申请

US20090087579A1 METHOD FOR DIRECTIONAL DEPOSITION USING A GAS CLUSTER ION BEAM 有权
标题翻译：使用气体聚集体离子束的方向沉积方法
公开(公告)号：US20090087579A1
公开(公告)日：2009-04-02
申请号：US11864330
申请日：2007-09-28
申请人： John J. Hautala
发明人： John J. Hautala
IPC分类号： C23C14/14
CPC分类号： C23C14/221 , H01J2237/0812
摘要： A method for depositing material on a substrate is described. The method comprises directionally depositing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor to the thin film, wherein the deposition occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and deposition is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.
摘要翻译：描述了在衬底上沉积材料的方法。该方法包括使用从薄膜的前体源形成的气体簇离子束（GCIB）在衬底的一个或多个表面上定向沉积薄膜，其中沉积发生在基本上垂直于入射方向定向的表面上的GCIB，并且在基本上平行于入射方向取向的表面上基本上避免了沉积。

68. 发明授权

US07377228B2 System for and method of gas cluster ion beam processing 有权
标题翻译：气体簇离子束处理系统及方法
公开(公告)号：US07377228B2
公开(公告)日：2008-05-27
申请号：US10667006
申请日：2003-09-19
申请人： Michael E. Mack
发明人： Michael E. Mack
IPC分类号： C23C16/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/026 , C23C16/452 , H01J37/08 , H01J37/317 , H01J2237/0041 , H01J2237/0812
摘要： System and method of gas-cluster ion beam processing is realized by incorporating improved beam and workpiece neutralizing components. Larger GCIB current transport is enabled by low energy electron neutralization of space charge of the GCIB. The larger currents transport greater quantities of gas in the GCIB. A vented faraday cup beam measurement system maintains beam dosimetry accuracy despite the high gas transport load.
摘要翻译：通过结合改进的梁和工件中和组件实现气体簇离子束处理的系统和方法。通过GCIB的空间电荷的低能量电子中和来实现更大的GCIB电流传输。较大的电流在GCIB中运送更多的气体。排气法拉第杯梁测量系统保持射束剂量测定精度，尽管气体输送负荷较高。

69. 发明授权

US07345856B2 Method and apparatus for arc suppression in scanned ion beam processing equipment 有权
标题翻译：扫描离子束处理设备中电弧抑制的方法和装置
公开(公告)号：US07345856B2
公开(公告)日：2008-03-18
申请号：US11259549
申请日：2005-10-25
申请人： Kenneth P. Regan
发明人： Kenneth P. Regan
IPC分类号： H02H3/00 , H02H7/00
CPC分类号： H01J37/3171 , H01J27/026 , H01J37/08 , H01J37/241 , H01J37/302 , H01J37/3056 , H01J2237/0206 , H01J2237/0812 , H02H7/003
摘要： In an ion bean acceleration system, transient electrical arc suppression and ion beam accelerator biasing circuitry. Two-terminal circuitry, connectable in series, for suppressing arcs by automatically sensing arc conditions and switch from at least a first operating state providing a relatively low resistance electrical pathway for current between source and load terminals to at least a second, relatively high resistance electrical pathway. Selection of circuit component characteristics permits controlling the delay in returning from the second state to the first state after the arc has been suppressed.
摘要翻译：在离子豆加速系统中，瞬态电弧抑制和离子束加速器偏置电路。两端子电路，可串联连接，用于通过自动感测电弧条件并从至少第一工作状态切换来抑制电弧，从而提供用于源极和负载端子之间的电流的相对较低电阻的电路，至少第二相对高电阻的电途径。选择电路元件特性允许控制在电弧被抑制之后从第二状态返回到第一状态的延迟。

70. 发明申请

US20070184655A1 Copper Interconnect Wiring and Method and Apparatus for Forming Thereof 有权
标题翻译：铜互连接线及其形成方法和装置
公开(公告)号：US20070184655A1
公开(公告)日：2007-08-09
申请号：US11671813
申请日：2007-02-06
申请人： Arthur Learn , Steven Sherman , Robert Geffken , John Hautala
发明人： Arthur Learn , Steven Sherman , Robert Geffken , John Hautala
IPC分类号： H01L21/44
CPC分类号： H01L21/32136 , C23C14/0605 , C23C14/0635 , C23C14/0652 , C23C14/221 , C23C16/26 , C23C16/325 , C23C16/345 , C23C16/513 , H01J2237/0812 , H01L21/02074 , H01L21/02301 , H01L21/02304 , H01L21/321 , H01L21/67207 , H01L21/76801 , H01L21/76822 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76865 , H01L21/76867 , H01L21/76883 , H01L21/76886 , H01L2924/0002 , H01L2924/00
摘要： Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods and apparatus for forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided. Various cluster tool configurations including gas-cluster ion-beam processing modules for copper capping, cleaning, etching, and film formation steps are disclosed.
摘要翻译：在用于集成电路的互连结构中的铜互连布线层的表面上的覆盖层或层，以及通过应用气体簇离子束处理形成用于集成电路的改进的集成互连结构的方法和装置。减少铜扩散和改善电迁移寿命，避免使用选择性金属封盖技术及其伴随产量问题。公开了包括用于铜封盖，清洗，蚀刻和成膜步骤的气体簇离子束处理模块的各种簇工具配置。

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