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    • 62. 发明授权
    • Method of treating the slag from a copper converter
    • 从铜转炉处理炉渣的方法
    • US4707185A
    • 1987-11-17
    • US823631
    • 1986-01-29
    • Takayoshi KimuraSeiichi TsuyuguchiYoshiaka Mori
    • Takayoshi KimuraSeiichi TsuyuguchiYoshiaka Mori
    • C22B7/04C22B15/00C22B15/04C22B15/06
    • C22B15/006C22B15/0036C22B15/0043C22B15/0054
    • A method of treating the slag from a copper converter comprises introducing the molten slag from a copper converter into a furnace having tuyeres through which air can be blown into the molten slag, blowing into the slag through the tuyeres at least 6% by weight of pulverized coal with air or oxygen-enriched air having an oxygen content of 21 to 40% by volume to separate molten metallic copper from the slag, the amount of the air having a ratio of 0.3 to 0.7 to theoretical combustion of the coal, adding a source of sulfur to the separated copper to form a molten matte, maintaining the matte at a reduced pressure not exceeding 0.6 mm Hg for at least five minutes in a vacuum refining apparatus to remove impurities from the matte by volatilization, and treating the refined matte in a copper converter used for the treatment of a matte produced by a smelting furnace.
    • 从铜转化器处理炉渣的方法包括将来自铜转炉的熔渣引入到具有风口的炉子中,空气可以通过该风口吹入熔渣中,通过风嘴吹入至少6重量%粉碎的炉渣中 煤与空气或富氧空气的氧含量为21至40体积%以将熔融的金属铜与炉渣分离,空气的量与煤的理论燃烧比例为0.3至0.7,添加源 的硫分散到分离的铜以形成熔融的哑光,在真空精炼装置中将锍保持在不超过0.6mm Hg的压力下至少5分钟,以通过挥发除去锍中的杂质,并将处理的精细锍 铜转炉用于处理冶炼炉生产的无光泽。
    • 64. 发明授权
    • Production of finely-divided particulate bismuth oxide
    • 细碎的颗粒状氧化铋的生产
    • US4675171A
    • 1987-06-23
    • US805098
    • 1985-12-05
    • Shigeki KuboOsamu Yamamoto
    • Shigeki KuboOsamu Yamamoto
    • B01J12/02B22F9/12C01B13/20C01B19/00C01G29/00C01B27/00
    • C01B19/004B01J12/02B22F9/12C01B13/20C01G29/00C01P2004/32C01P2004/61C01P2004/62
    • Finely-divided particulate bismuth oxide is produced by the steps of heating bismuth at 800.degree. C. or above in a first compartment of a sealed vessel divided into two compartments by a partition wall, the two compartments communicating with each other by a hole provided on the partition wall, feeding an inert gas such as nitrogen and argon into the first compartment so that the bismuth vapor formed by heating bismuth has a bismuth concentration of 0.1 to 0.5 g/liter, blowing air into the bismuth vapor introduced from the first compartment into the second compartment through the hole on the partition wall, permitting the air to mix with the bismuth vapor to form bismuth oxide and simultaneously cooling the thus formed bismuth oxide to 250.degree. to 300.degree. C., discharging by suction the bismuth oxide from the sealed vessel at a flow rate of 1 to 5 m/sec, and cooling the discharged bismuth oxide by supplying cooling air outside the sealed vessel.
    • 精细分散的颗粒状氧化铋是通过以下步骤制造的:通过在分隔壁分成两个隔室的密封容器的第一隔室中将800℃或更高的铋加热的步骤,两个隔室通过设置在 分隔壁将氮气和氩气等惰性气体供给到第一隔室,使得通过加热铋形成的铋蒸气的铋浓度为0.1〜0.5g / l,将空气吹入从第一隔室引入的铋蒸气 第二隔室通过分隔壁上的孔,允许空气与铋蒸气混合以形成氧化铋,同时将由此形成的氧化铋冷却至250℃至300℃,通过从密封的氧化铋中抽出氧化铋 容器,以1〜5m /秒的流速,通过在密封容器外部供给冷却空气来冷却排出的氧化铋。
    • 68. 发明授权
    • Manufacturing a carrier tape or tapes
    • 制造载带或磁带
    • US4512843A
    • 1985-04-23
    • US535862
    • 1983-09-26
    • Shu Miyazaki
    • Shu Miyazaki
    • H01L21/48C23F1/02B44C1/22C03C15/00C03C25/06
    • H01L21/4828H01L2924/0002
    • A method of manufacturing a carrier tape for use in the continuous production of integrated circuits includes the formation of finger leads and sprocket holes in a metallic foil tape. The method includes the steps of stamping perforations adjacent the edges of the tape (Step B), coating both sides of the tape with a photoresist layer (6) (Step C), and then exposing the photoresist layers to light which has passed through a patterned mask (Step D). Sensitized or non-sensitized portions (7,8) of the photoresist layers are dissolved (Step E), and the uncovered portions of the metallic foil tape etched away (Step F) to leave a carrier tape which after dissolving the remaining photoresist, comprises a tape of a required width having apertures corresponding to finger lead patterns and sprocket hole patterns embodied in the original mask. By providing perforations in the margins of the starting material, the tape can be accurately located during the exposure step without having to pre-form sprocket holes. Such pre-formed sprocket holes are liable to be damaged in the exposure step, leading to inaccuracies when integrated circuit chips are brought into contact with the finger leads. The method can be applied to the manufacture of several carrier tapes formed side-by-side from a single, relatively wide metallic foil tape material.
    • 制造用于连续生产集成电路的载带的方法包括在金属箔带中形成指状引线和链轮孔。 该方法包括以下步骤:邻近带的边缘冲压穿孔(步骤B),用光致抗蚀剂层(6)涂覆带的两侧(步骤C),然后将光致抗蚀剂层暴露于通过 图案面膜(步骤D)。 溶解光致抗蚀剂层的致敏部分或非致敏部分(7,8)(步骤E),并且将金属箔带的未覆盖部分蚀刻掉(步骤F),留下在残留的光致抗蚀剂溶解后的载带, 所需宽度的带具有对应于原始掩模中实施的手指引线图案和链轮孔图案的孔。 通过在起始材料的边缘处提供穿孔,可以在曝光步骤期间精确地定位带,而不必预先形成链轮孔。 这种预先形成的链轮孔容易在曝光步骤中被损坏,导致集成电路芯片与指状导线接触时的不精确。 该方法可以应用于从单个相对宽的金属箔带材料并排形成的多个载带的制造。