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    • 61. 发明授权
    • Pre-amplifier in focal plane detector array
    • 焦平面检测器阵列中的前置放大器
    • US4791286A
    • 1988-12-13
    • US42686
    • 1987-04-27
    • Llewellyn E. Wall
    • Llewellyn E. Wall
    • H03F3/08H01J40/14
    • H03F3/082
    • Circuitry for a focal plane pre-amplifier is disclosed in which the input of the pre-amplifier is switched between the signal from its photo-detector and a connection to ground. During the ground-connected interval, the pre-amplifier transistor is temporarily diode-connected in such a way that the transistor's voltage is stored on a capacitor, which is connected between the incoming photo-detector signal and the input of the pre-amplifier transistor. During the photo-detector connected interval, the voltage stored on the capacitor is subtracted from the voltage signal supplied by the photo-detector.
    • 公开了一种用于焦平面前置放大器的电路,其中前置放大器的输入在其光检测器的信号和与地之间的连接之间切换。 在接地间隔期间,前置放​​大器晶体管暂时二极管连接,使得晶体管的电压存储在电容器上,电容器连接在输入光电检测器信号和前置放大器晶体管的输入端之间 。 在光电检测器连接间隔期间,从光电检测器提供的电压信号中减去存储在电容器上的电压。
    • 62. 发明授权
    • High-density electronic modules--process and product
    • 高密度电子模块 - 工艺和产品
    • US4706166A
    • 1987-11-10
    • US856835
    • 1986-04-25
    • Tiong C. Go
    • Tiong C. Go
    • H01L25/065H05K5/00H05K7/10H05K7/12
    • H05K5/0091H01L25/0657H01L2225/06517H01L2225/06527H01L2225/06551H01L2225/06582H01L2924/0002
    • A high-density electronic module is disclosed, which is suitable for use as a DRAM, SRAM, ROM, logic unit, arithmetic unit, etc. It is formed by stacking integrated-circuit chips, each of which carries integrated circuitry. The chips are glued together, with their leads along one edge, so that all the leads of the stack are exposed on an access plane. Bonding bumps are formed at appropriate points on the access plane. A supporting substrate, formed of a light transparent material, such as silicon, is provided with suitable circuitry and bonding bumps on its face. A layer of insulation is applied to either the access plane or the substrate face, preferably the latter. The bonding bumps on the insulation-carrying surface are formed after the insulation has been applied. The substrated face is placed on the access plane of the stack, their bonding bumps are microscopically aligned, and then bonded together under heat and/or pressure. A layer of thermally conductive (but electrically non-conductive) adhesive material is inserted between the substrate and stack. The substrate and stack combination is then placed and wire bonded in a protective container having leads extending therethrough for external connection.
    • 公开了一种适用于DRAM,SRAM,ROM,逻辑单元,运算单元等的高密度电子模块。它是通过堆叠集成电路芯片形成的,每个芯片承载集成电路。 芯片被胶合在一起,其引线沿着一个边缘,使得堆叠的所有引线暴露在接入平面上。 接合凸块形成在接近平面上的适当点处。 由诸如硅的透光材料形成的支撑衬底在其表面上设置有合适的电路和接合凸块。 绝缘层被施加到接入面或衬底面,优选地是后者。 在施加绝缘体之后,形成绝缘承载表面上的接合凸块。 将下面的表面放置在堆叠的存取平面上,将它们的焊接凸块微观对准,然后在加热和/或压力下粘结在一起。 一层导热(但不导电)的粘合剂材料插入在基片和叠层之间。 然后将衬底和堆叠组合放置并且线接合在具有延伸穿过其中的引线的保护容器中用于外部连接。
    • 63. 发明授权
    • Apparatus and method for fabricating modules comprising stacked
circuit-carrying layers
    • 用于制造模块的装置和方法包括堆叠的电路承载层
    • US4704319A
    • 1987-11-03
    • US842159
    • 1986-03-21
    • Robert J. BelangerAlan G. Bisignano
    • Robert J. BelangerAlan G. Bisignano
    • H01L21/00H01L23/538H01L25/065H05K3/46B32B3/00H01J40/14
    • H01L21/67121H01L23/5385H01L25/0657H01L2225/06527H01L2225/06551H01L2225/06555H01L2924/0002H05K3/4611Y10S428/901Y10T428/24917
    • A method and related fixtures are disclosed which permit formation of stacks of thin circuitry-carrying layers. The layers terminate in an access plane having a two dimensional array of closely-spaced electrical leads. The method includes the steps of measuring the thickness of separate chips, selecting groups of chips having appropriate thicknesses, applying appropriate amounts of epoxy between adjacent chips, aligning the chips (and their electrical leads) in the direction parallel to their planes (i.e., the X-axis), and closing the cavity with an end wall which (a) exerts pressure on the stacked chips and epoxy in a direction perpendicular to the chip planes, and (b) establishes a fixed height of the stack in order to align the leads in the Y-axis. The final fixture provides a fixed-size cavity for confining the layers during curing of thermo-setting adhesive which has been applied between each adjacent pair of layers. An initial fixture is provided for accurately measuring the thickness of each layer under substantial layer-flattening pressure. An intermediate fixture is provided for wet stacking the layers prior to their insertion into the final fixture.
    • 公开了一种允许形成薄电路承载层的堆叠的方法和相关的固定装置。 这些层终止于具有紧密间隔的电引线的二维阵列的访问平面中。 该方法包括以下步骤:测量分离的芯片的厚度,选择具有适当厚度的芯片组,在相邻芯片之间施加适量的环氧树脂,使芯片(及其电引线)沿平行于其平面的方向(即, X轴),并且用端壁封闭空腔,(a)在与芯片平面垂直的方向上对堆叠的芯片和环氧树脂施加压力,以及(b)建立堆叠的固定高度以使 在Y轴上引导。 最终的夹具提供固定尺寸的空腔,用于在已经施加在每个相邻的层之间的热固性粘合剂的固化期间限制层。 提供了初始夹具,用于在基本的平坦化压力下精确测量每层的厚度。 提供了一种中间夹具,用于在将它们插入最终的固定装置之前将层压缩。
    • 70. 发明申请
    • Solid State Depletion Region Unit Cell Spectrometer
    • 固态消耗区单位细胞光谱仪
    • US20120176619A1
    • 2012-07-12
    • US13346907
    • 2012-01-10
    • David Ludwig
    • David Ludwig
    • G01J3/28
    • G01J3/50G01J2003/466
    • A solid state spectrometer unit cell or plurality of cells for sensing different wavelengths of electromagnetic radiation at different depths within the substrate of the device. Variable bias voltages on one or more p-n junctions in the device are used so that the depth of the depletion regions are selectively varied. By varying the depletion region thickness of the p-n junctions in the device, the wavelengths absorbed by the semiconductor device and resultant electron-hole pairs collected by the p-n junctions are varied. In one embodiment, the outputs of each of two unit cell p-n junctions are sensed and the difference calculated and output to suitable circuitry for display as representative of a particular range or frequency of the electromagnetic spectrum.
    • 固态光谱仪单元或多个单元,用于感测在该器件的衬底内的不同深度的不同波长的电磁辐射。 使用器件中一个或多个p-n结上的可变偏置电压,使得耗尽区的深度被选择性地变化。 通过改变器件中p-n结的耗尽区厚度,由p-n结收集的半导体器件吸收的波长和由此产生的电子 - 空穴对变化。 在一个实施例中,感测到两个单位单元p-n结中的每一个的输出,并且计算出的差值并将其输出到用于显示的合适电路,以代表电磁频谱的特定范围或频率。