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    • 63. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US08488647B2
    • 2013-07-16
    • US12923634
    • 2010-09-30
    • Takahiro ArakidaShiro UchidaMasaki ShiozakiOsamu Maeda
    • Takahiro ArakidaShiro UchidaMasaki ShiozakiOsamu Maeda
    • H01S5/00
    • H01S5/0264H01S5/18313H01S5/18325
    • The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
    • 本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。 除了用于变窄的电流的第一氧化层之外,在有源层和半导体光检测元件之间提供一个或多个第二氧化层。 由于天然发射光包含许多发散分量,所以天然发射光被第二氧化层反射和散射,并且抑制了将自然发射光传播到半导体光检测元件侧。 半导体光检测元件的自然发光的检测水平降低,光检测精度提高。 第一和第二氧化层通过单一氧化工艺形成,从而简化了制造工艺。
    • 64. 发明授权
    • Optical module and optical waveguide
    • 光模块和光波导
    • US08100589B2
    • 2012-01-24
    • US12320551
    • 2009-01-29
    • Miwa OkuboTakahiro ArakidaHidehiko NakataTerukazu Naruse
    • Miwa OkuboTakahiro ArakidaHidehiko NakataTerukazu Naruse
    • G02B6/36
    • G02B6/4214G02B6/423G02B6/4249H01L2224/48091H01L2924/00014
    • An optical module includes an optical waveguide including a waveguide core through which light propagates and a clad configured to trap the light in the waveguide core, and a circuit board on which a surface-type optical element is mounted. The optical waveguide further includes a reflective surface from which an end face of the waveguide core is exposed, the reflective surface being provided on an inclined face at one end face of the optical waveguide core in an extending direction of the waveguide core, and an element mount opening provided in the clad such as to be opposite from the reflective surface, the element mount opening having a size such as to contain the optical element. The optical waveguide is mounted on the circuit board while the optical element is contained in the element mount opening and is aligned with the reflective surface of the optical waveguide.
    • 光学模块包括光波导,其包括光传播的波导芯和被配置为将光捕获在波导芯中的包层,以及安装有表面型光学元件的电路板。 光波导还包括反射表面,波导芯的端面从该反射表面暴露,反射表面设置在波导芯的延伸方向的光波导芯的一个端面的倾斜面上, 安装开口设置在包层中以与反射表面相对,元件安装开口具有容纳光学元件的尺寸。 光波导安装在电路板上,同时光学元件容纳在元件安装开口中并且与光波导的反射表面对齐。
    • 66. 发明申请
    • Semiconductor light emitting device
    • 半导体发光器件
    • US20110096806A1
    • 2011-04-28
    • US12923634
    • 2010-09-30
    • Takahiro ArakidaShiro UchidaMasaki ShiozakiOsamu Maeda
    • Takahiro ArakidaShiro UchidaMasaki ShiozakiOsamu Maeda
    • H01S5/02
    • H01S5/0264H01S5/18313H01S5/18325
    • The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
    • 本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。 除了用于变窄的电流的第一氧化层之外,在有源层和半导体光检测元件之间提供一个或多个第二氧化层。 由于天然发射光包含许多发散分量,所以天然发射光被第二氧化层反射和散射,并且抑制了将自然发射光传播到半导体光检测元件侧。 半导体光检测元件的自然发光的检测水平降低,光检测精度提高。 第一和第二氧化层通过单一氧化工艺形成,从而简化了制造工艺。