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61. 发明授权

US08224341B2 Method for providing service, and method and apparatus for allocating resource in wireless communication system 有权
标题翻译：提供服务的方法，以及在无线通信系统中分配资源的方法和装置
公开(公告)号：US08224341B2
公开(公告)日：2012-07-17
申请号：US12539356
申请日：2009-08-11
申请人： Seung-Hwan Lee , Jin Up Kim , Kyu Tae Lee
发明人： Seung-Hwan Lee , Jin Up Kim , Kyu Tae Lee
IPC分类号： H04Q7/20
CPC分类号： H04W72/10
摘要： Provided is a method for providing a service, and a method and an apparatus for allocating a resource in a wireless communication system. Services to be provided to users are divided into one of primary and secondary services based on priority in terms of frequency utilization. A service is provided using frequency channel remaining after being used in the primary service in a time zone when frequency utilization rate of the primary service is a threshold value or less. Accordingly, when service data corresponding to the secondary service are received, a user terminal stores the service data in a storage unit. Then, when the user requests provision of the corresponding service, the user terminal provides the stored service data to the user.
摘要翻译：提供了一种用于提供服务的方法，以及用于在无线通信系统中分配资源的方法和装置。根据频率利用率的优先级将提供给用户的服务分为主要和次要服务之一。在主服务的频率利用率为阈值以下的情况下，在时区中的主服务中使用后，使用频道剩余的服务。因此，当接收到与辅助服务相对应的服务数据时，用户终端将服务数据存储在存储单元中。然后，当用户请求提供相应的服务时，用户终端向用户提供所存储的服务数据。

62. 发明授权

US08114735B2 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US08114735B2
公开(公告)日：2012-02-14
申请号：US11902209
申请日：2007-09-20
申请人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yi
发明人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yi
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/28185 , H01L21/28194 , H01L21/28282 , H01L21/3185 , H01L29/4234 , H01L29/518 , H01L29/7923
摘要： In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.
摘要翻译：在制造非易失性存储器件的方法中，隧道绝缘层可以形成在衬底的沟道区上。可以在隧道绝缘层上形成包括氮化硅的电荷俘获层，以从沟道区捕获电子。可以使用包括氮气的第一气体和包括氧的第二气体来进行热处理，以去除电荷捕获层中的缺陷位点并致密化电荷捕获层。可以在热处理的电荷俘获层上形成阻挡层，然后可以在阻挡层上形成导电层。阻挡层，导电层，热处理电荷捕获层和隧道绝缘层可以被图案化以在沟道区上形成栅极结构。因此，可以提高包括门结构的非易失性存储器件的数据保持性能和/或可靠性。

63. 发明申请

US20110114166A1 Photoelectric conversion device 审中-公开
标题翻译：光电转换装置
公开(公告)号：US20110114166A1
公开(公告)日：2011-05-19
申请号：US12662193
申请日：2010-04-05
申请人： Yi-Hyun Chang , Seung-Hwan Lee , Jae-Seok Lim
发明人： Yi-Hyun Chang , Seung-Hwan Lee , Jae-Seok Lim
IPC分类号： H01L31/0224 , H01L31/02
CPC分类号： H01G9/2077 , H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： A photoelectric conversion device capable of increasing an adhesive force between substrates is provided. The photoelectric conversion device includes a first and second substrates facing each other, a photoelectrode including a first transparent conductive layer and formed on a surface of the first substrate facing the second substrate, a counter electrode including a second transparent conductive layer and formed on a surface of the second substrate facing the first substrate, a semiconductor layer formed on the photoelectrode and including a photosensitive dye that generates electrons when excited by light, an electrolyte disposed between the semiconductor layer and the counter electrode, and a sealing member disposed between the first and second transparent conductive layers. At least one of the first and second transparent conductive layers has a first stepped portion in which the sealing member is disposed. The sealing member seals a space between the first and second transparent conductive layers. Accordingly, an adhesive force and a sealing force between the sealing member and the light receiving substrate may be increased.
摘要翻译：提供了能够增加基板之间的粘合力的光电转换装置。光电转换装置包括彼此面对的第一和第二基板，包括第一透明导电层并形成在与第二基板相对的第一基板的表面上的光电极，包括第二透明导电层的对电极形成在表面上所述第二衬底面对所述第一衬底，形成在所述光电极上的半导体层，并且包括在被光激发时产生电子的光敏染料，设置在所述半导体层和所述对电极之间的电解质，以及密封构件，第二透明导电层。第一透明导电层和第二透明导电层中的至少一个具有设置有密封构件的第一台阶部。密封构件密封第一和第二透明导电层之间的空间。因此，可以增加密封构件和光接收基板之间的粘合力和密封力。

64. 发明申请

US20100328569A1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20100328569A1
公开(公告)日：2010-12-30
申请号：US12654588
申请日：2009-12-23
申请人： Nam-Chul Cho , Seung-Hwan Lee
发明人： Nam-Chul Cho , Seung-Hwan Lee
IPC分类号： G02F1/1333
CPC分类号： G02F1/133308 , G02F2001/13332 , G02F2001/133325
摘要： The present invention relates to a liquid crystal display device. The liquid crystal display device includes a liquid crystal module having a top case, a bottom plate, a liquid crystal display panel in the top case and the bottom plate for displaying a picture, and a drive unit. The liquid crystal display device also includes a drive control unit for generating a control signal for controlling the drive unit and supplying the control signal to the drive unit of the liquid crystal module through at least one connector and cable. The top case of the liquid crystal module includes at least one first and second fastening bent portion for fastening at least one source printed circuit board in horizontal and vertical directions, respectively.
摘要翻译：本发明涉及一种液晶显示装置。液晶显示装置包括具有顶壳，底板，顶壳中的液晶显示面板和用于显示图像的底板的液晶模块和驱动单元。液晶显示装置还包括：驱动控制单元，用于产生用于控制驱动单元的控制信号，并通过至少一个连接器和电缆将控制信号提供给液晶模块的驱动单元。液晶模块的顶壳包括分别用于在水平和垂直方向上固定至少一个源印刷电路板的至少一个第一和第二紧固弯曲部分。

65. 发明授权

US07723193B2 Method of forming an at least penta-sided-channel type of FinFET transistor 有权
标题翻译：形成至少五面通道型FinFET晶体管的方法
公开(公告)号：US07723193B2
公开(公告)日：2010-05-25
申请号：US12149329
申请日：2008-04-30
申请人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
发明人： Hwa-Sung Rhee , Hyun-Suk Kim , Ueno Tetsuji , Jae-Yoon Yoo , Seung-Hwan Lee , Ho Lee , Moon-han Park
IPC分类号： H01L21/336
CPC分类号： H01L29/7853 , H01L29/66795
摘要： An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
摘要翻译：至少五面通道类型的FinFET晶体管可以包括：基极; 形成在所述基座上的半导体本体，所述主体被布置成较长的尺寸，以使源极/漏极区域夹持沟道区域，至少所述沟道横截面与所述长尺寸的横截面具有至少五个平面基础; 主体通道区上的栅极绝缘体; 以及形成在栅极绝缘体上的栅电极。

66. 发明申请

US20100072536A1 Non-volatile memory device and method of manufacturing the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100072536A1
公开(公告)日：2010-03-25
申请号：US12591109
申请日：2009-11-09
申请人： Se-Hoon Ho , Yong-Geun Park , Han-Mel Choi , Seung-Hwan Lee , Ki-Yeon Park , Sun-Jung Kim
发明人： Se-Hoon Ho , Yong-Geun Park , Han-Mel Choi , Seung-Hwan Lee , Ki-Yeon Park , Sun-Jung Kim
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L29/40117 , H01L29/4234 , H01L29/513
摘要： In a non-volatile memory device and a method of manufacturing the non-volatile memory device, a tunnel insulating layer, a charge trapping layer, a dielectric layer and a conductive layer may be sequentially formed on a channel region of a substrate. The conductive layer may be patterned to form a gate electrode and spacers may be formed on sidewalls of the gate electrode. A dielectric layer pattern, a charge trapping layer pattern, and a tunnel insulating layer pattern may be formed on the channel region by an anisotropic etching process using the spacers as an etch mask. Sidewalls of the charge trapping layer pattern may be removed by an isotropic etching process to reduce the width thereof. Thus, the likelihood of lateral diffusion of electrons may be reduced or prevented in the charge trapping layer pattern and high temperature stress characteristics of the non-volatile memory device may be improved.
摘要翻译：在非易失性存储器件和制造非易失性存储器件的方法中，隧道绝缘层，电荷俘获层，电介质层和导电层可以顺序形成在衬底的沟道区上。可以将导电层图案化以形成栅电极，并且可以在栅电极的侧壁上形成间隔物。可以通过使用间隔物作为蚀刻掩模的各向异性蚀刻工艺在沟道区上形成电介质层图案，电荷俘获层图案和隧道绝缘层图案。可以通过各向同性蚀刻工艺去除电荷俘获层图案的侧壁以减小其宽度。因此，电荷捕获层图案中电子的横向扩散的可能性可能会降低或被抑制，并且可以提高非易失性存储器件的高温应力特性。

67. 发明授权

US07682906B2 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07682906B2
公开(公告)日：2010-03-23
申请号：US11907162
申请日：2007-10-10
申请人： Young-Geun Park , Han-Mei Choi , Seung-Hwan Lee , Sun-Jung Kim , Se-Hoon Oh , Young-Sun Kim
发明人： Young-Geun Park , Han-Mei Choi , Seung-Hwan Lee , Sun-Jung Kim , Se-Hoon Oh , Young-Sun Kim
IPC分类号： H01L21/8247
CPC分类号： H01L21/28273 , H01L21/02181 , H01L21/0228 , H01L21/02304 , H01L21/3145 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L27/115 , H01L27/11521 , H01L29/513 , H01L29/517 , H01L29/7881
摘要： A method of manufacturing a non-volatile memory device includes forming a tunnel isolation layer forming a tunnel isolation layer on a substrate, forming a conductive pattern on the tunnel isolation layer, forming a lower silicon oxide layer on the conductive pattern, treating a surface portion of the lower silicon oxide layer with a nitridation treatment to form a first silicon oxynitride layer on the lower silicon oxide layer, forming a metal oxide layer on the first silicon oxynitride layer, forming an upper silicon oxide layer on the metal oxide layer, and forming a conductive layer on the upper silicon oxide layer.
摘要翻译：一种制造非易失性存储器件的方法包括在衬底上形成形成隧道隔离层的隧道隔离层，在隧道隔离层上形成导电图案，在导电图案上形成下部氧化硅层，处理表面部分通过氮化处理以在下部氧化硅层上形成第一氧氮化硅层，在第一氮氧化硅层上形成金属氧化物层，在金属氧化物层上形成上部氧化硅层，形成在上氧化硅层上的导电层。

68. 发明授权

US07635633B2 Non-volatile memory device and method of manufacturing the same 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07635633B2
公开(公告)日：2009-12-22
申请号：US11898039
申请日：2007-09-07
申请人： Se-Hoon Oh , Young-Geun Park , Han-Mei Choi , Seung-Hwan Lee , Ki-Yeon Park , Sun-Jung Kim
发明人： Se-Hoon Oh , Young-Geun Park , Han-Mei Choi , Seung-Hwan Lee , Ki-Yeon Park , Sun-Jung Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/792
摘要： In a non-volatile memory device and a method of manufacturing the non-volatile memory device, a tunnel insulating layer, a charge trapping layer, a dielectric layer and a conductive layer may be sequentially formed on a channel region of a substrate. The conductive layer may be patterned to form a gate electrode and spacers may be formed on sidewalls of the gate electrode. A dielectric layer pattern, a charge trapping layer pattern, and a tunnel insulating layer pattern may be formed on the channel region by an anisotropic etching process using the spacers as an etch mask. Sidewalls of the charge trapping layer pattern may be removed by an isotropic etching process to reduce the width thereof. Thus, the likelihood of lateral diffusion of electrons may be reduced or prevented in the charge trapping layer pattern and high temperature stress characteristics of the non-volatile memory device may be improved.
摘要翻译：在非易失性存储器件和制造非易失性存储器件的方法中，隧道绝缘层，电荷俘获层，电介质层和导电层可以顺序形成在衬底的沟道区上。可以将导电层图案化以形成栅电极，并且可以在栅电极的侧壁上形成间隔物。可以通过使用间隔物作为蚀刻掩模的各向异性蚀刻工艺在沟道区上形成电介质层图案，电荷俘获层图案和隧道绝缘层图案。可以通过各向同性蚀刻工艺去除电荷俘获层图案的侧壁以减小其宽度。因此，电荷捕获层图案中电子的横向扩散的可能性可能会降低或被抑制，并且可以提高非易失性存储器件的高温应力特性。

69. 发明授权

US07605067B2 Method of manufacturing non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07605067B2
公开(公告)日：2009-10-20
申请号：US11859618
申请日：2007-09-21
申请人： Ki-Yeon Park , Sun-Jung Kim , Min-Kyung Ryu , Seung-Hwan Lee , Han-Mei Choi
发明人： Ki-Yeon Park , Sun-Jung Kim , Min-Kyung Ryu , Seung-Hwan Lee , Han-Mei Choi
IPC分类号： H01L21/3205
CPC分类号： H01L27/115 , H01L27/11521
摘要： A method of manufacturing a non-volatile memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower dielectric layer on the conductive pattern, performing a first heat treatment process to density the lower dielectric layer, and forming a middle dielectric layer having an energy band gap smaller than that of the lower dielectric layer on the first heat-treated lower dielectric layer. The method further includes forming an upper dielectric layer including a material substantially identical to that of the lower dielectric layer on the middle dielectric layer, performing a second heat treatment process to densify the middle dielectric layer and the upper dielectric layer and forming a conductive layer on the second heat-treated upper dielectric layer.
摘要翻译：一种制造非易失性存储器件的方法包括在衬底上形成隧道绝缘层，在隧道绝缘层上形成导电图案，在导电图案上形成下介电层，执行第一热处理工艺以密度较低并且形成具有比第一经热处理的下电介质层上的下介电层的能带隙小的能带隙的中间电介质层。该方法还包括形成上介电层，其包括与中间介电层上的下电介质层的材料基本相同的材料，执行第二热处理工艺以使中介电层和上电介质层致密并形成导电层第二热处理的上介电层。

70. 发明申请

US20090154448A1 TERMINAL EQUIPMENT OF COMMUNICATION SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：通信系统的终端设备及其方法
公开(公告)号：US20090154448A1
公开(公告)日：2009-06-18
申请号：US11719844
申请日：2005-10-20
申请人： Seung-Hwan Lee , Won-Jae Cha , Sang-Jeom Lee
发明人： Seung-Hwan Lee , Won-Jae Cha , Sang-Jeom Lee
IPC分类号： H04L12/66 , G10L19/00
CPC分类号： H04L69/26
摘要： Disclosed is a transmitting and receiving apparatus and method in a communication system. The transmitting and receiving apparatus and method can provide a data service for exchanging user data including characters, images, computer files, messages, etc. as well as voice over a voice physical channel for providing a voice service in a wireless communication system including IS-95A/B, CDMA 1x, GSM and W-CDMA and in a communication system including a voice service for providing a VoIP service through a wired/wireless packet network. That is, the transmitting and receiving apparatus and method can provide a data service which transfers user data information while a voice service is provided or plays a game etc. during a call.
摘要翻译：公开了一种通信系统中的发送和接收装置和方法。发送和接收装置和方法可以提供数据服务，用于交换包括字符，图像，计算机文件，消息等的用户数据以及语音物理信道上的语音，用于在包括IS- 95A / B，CDMA 1x，GSM和W-CDMA，以及包括用于通过有线/无线分组网络提供VoIP服务的语音服务的通信系统。也就是说，发送和接收装置和方法可以提供在通话期间提供语音服务或播放游戏等时传送用户数据信息的数据服务。

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