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61. 发明授权

US08835918B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08835918B2
公开(公告)日：2014-09-16
申请号：US13608039
申请日：2012-09-10
申请人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1218 , H01L27/1225
摘要： To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.
摘要翻译：为了提供包括氧化物半导体并且能够高速运行的晶体管或包括晶体管的高度可靠的半导体器件，提供了包括一对低电阻区域和沟道形成区域的氧化物半导体层的晶体管在基底绝缘层上嵌入并且其上表面至少部分地从基底绝缘层露出的电极层上，并且设置在氧化物半导体层上方的布线层电连接到电极层或电极层的一部分氧化物半导体层的低电阻区域与电极层重叠。

62. 发明授权

US08835214B2 Sputtering target and method for manufacturing semiconductor device 有权
标题翻译：溅射靶和制造半导体器件的方法
公开(公告)号：US08835214B2
公开(公告)日：2014-09-16
申请号：US13221252
申请日：2011-08-30
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L21/16 , H01L29/66 , C23C14/34 , H01L29/786 , C23C14/08
CPC分类号： C23C14/3414 , C23C14/081 , C23C14/086 , H01L21/02565 , H01L21/02631 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited.
摘要翻译：目的在于提供一种用于沉积氧化物半导体膜的沉积技术。另一个目的是提供一种使用氧化物半导体膜制造高可靠性半导体元件的方法。使用通过除去用于沉积的溅射靶中杂质的碱金属，碱土金属和氢来获得的新的溅射靶，由此可以沉积含有少量这些杂质的氧化物半导体膜。

63. 发明授权

US08828794B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08828794B2
公开(公告)日：2014-09-09
申请号：US13413684
申请日：2012-03-07
申请人： Shunpei Yamazaki , Yuhei Sato , Keiji Sato , Tetsunori Maruyama , Junichi Koezuka
发明人： Shunpei Yamazaki , Yuhei Sato , Keiji Sato , Tetsunori Maruyama , Junichi Koezuka
IPC分类号： H01L21/42 , H01L21/84 , H01L21/336 , H01L27/12 , H01L29/786
CPC分类号： H01L21/40 , H01L21/02175 , H01L21/02252 , H01L21/02565 , H01L21/02636 , H01L21/02664 , H01L21/324 , H01L21/383 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
摘要翻译：在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

64. 发明授权

US08823092B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08823092B2
公开(公告)日：2014-09-02
申请号：US13297480
申请日：2011-11-16
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/66 , H01L21/84
CPC分类号： H01L29/7869 , H01L29/1054 , H01L29/247 , H01L29/4908 , H01L29/66969 , H01L29/78696
摘要： An object is to provide a transistor in which the state of an interface between an oxide semiconductor layer and an insulating film (gate insulating layer) in contact with the oxide semiconductor layer is favorable; and a method for manufacturing the transistor. In order to obtain the transistor, nitrogen is added to a region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer. Specifically, a concentration gradient of nitrogen is formed in the oxide semiconductor layer, and a region containing much nitrogen is provided at the interface with the gate insulating layer. By the addition of nitrogen, a region with high crystallinity can be formed in the region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer, so that a stable interface state can be obtained.
摘要翻译：目的在于提供一种晶体管，其中与氧化物半导体层接触的氧化物半导体层和绝缘膜（栅极绝缘层）之间的界面的状态是有利的; 以及晶体管的制造方法。为了获得晶体管，在与栅极绝缘层的界面附近，在氧化物半导体层的区域添加氮。具体地，在氧化物半导体层中形成氮的浓度梯度，并且在与栅绝缘层的界面处设置含有大量氮的区域。通过添加氮，可以在与栅极绝缘层的界面附近的氧化物半导体层的区域中形成具有高结晶度的区域，从而可以获得稳定的界面状态。

65. 发明授权

US08822997B2 Electrophoretic display device and method for manufacturing thereof 有权
标题翻译：电泳显示装置及其制造方法
公开(公告)号：US08822997B2
公开(公告)日：2014-09-02
申请号：US12212983
申请日：2008-09-18
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/10 , H01L29/04 , H01L31/00
CPC分类号： H01L27/1266 , G02F1/1368 , G02F1/167 , H01L27/1214 , H01L27/1218 , H01L29/04 , H01L29/78603 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： It is an object to provide an electrophoretic display device having a thin film transistor which has highly reliable electric characteristics, lightweight, and flexibility. A gate insulating film is formed over a gate electrode, a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film, a buffer layer is formed over the microcrystalline semiconductor film, a pair of source and drain regions are formed over the buffer layer, a pair of the source and drain electrodes in contact with the source and drain regions are formed. Then, the inverted-staggered thin film transistor is interposed between the flexible substrates, and the thin film transistor is provided with electrophoretic display element which is electrically connected by the pixel electrode. Then, the electrophoretic display electrode is surrounded by the partition layer so as to cover the end portion of the pixel electrode and provided over the pixel electrode.
摘要翻译：本发明的目的是提供一种具有薄膜晶体管的电泳显示装置，该薄膜晶体管具有高度可靠的电特性，重量轻和灵活性。在栅电极上形成栅极绝缘膜，在栅绝缘膜上形成作为沟道形成区域的微晶半导体膜，在微晶半导体膜上形成缓冲层，形成一对源区和漏区在缓冲层上形成与源区和漏区接触的一对源极和漏极。然后，倒置交错薄膜晶体管插入在柔性基板之间，并且薄膜晶体管设置有通过像素电极电连接的电泳显示元件。然后，电泳显示电极被分隔层包围，以覆盖像素电极的端部并且设置在像素电极上。

66. 发明授权

US08818497B2 Biological signal processing unit, wireless memory, biological signal processing system, and control system of device to be controlled 有权
标题翻译：生物信号处理单元，无线存储器，生物信号处理系统以及要控制的设备的控制系统
公开(公告)号：US08818497B2
公开(公告)日：2014-08-26
申请号：US11631159
申请日：2005-07-12
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： A61B5/04 , A61F4/00 , A61B5/0478 , G06F3/01 , A61B5/00
CPC分类号： G06F3/015 , A61B5/0478 , A61B5/4088 , A61B5/6814 , A61F4/00
摘要： It is an object to provide a means for easily operating various devices to be controlled (i.e. a word processor or a car) using a brain wave signal of a patient with Alzheimer's disease or a psychological disorder, and for supporting the active performance of a user by employing wireless communication with a memory (wireless memory) capable of communicating without wires in which a command on the human movement is memorized. A present biological signal processing unit has an electrode for detecting a biological signal (an electric signal) from a living body, or for transmitting an electric signal into a living body, an interface, and an antenna which can communicate with an external device (i.e. wireless memory, reader/writer); therefore, convenience of the user is improved in the case where a user utilizes an electronic device or the like. In addition, the active performance of a user can be supported.
摘要翻译：本发明的目的是提供一种用于使用阿尔茨海默病或心理障碍的患者的脑波信号容易地操作要控制的各种装置（即文字处理器或汽车）的装置，并且用于支持用户的主动表演通过与能够进行通信的存储器（无线存储器）进行无线通信，而不需要存储人体移动指令的线路。本生物信号处理单元具有用于检测来自生物体的生物信号（电信号）的电极，或用于将电信号发送到可与外部装置通信的生物体，界面和天线（即，无线内存，读写器）; 因此，在用户使用电子设备等的情况下，提高了用户的便利性。此外，可以支持用户的主动性能。

67. 发明授权

US08815331B2 Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device 有权
标题翻译：成膜装置及其清洗方法以及发光装置的制造方法
公开(公告)号：US08815331B2
公开(公告)日：2014-08-26
申请号：US13449396
申请日：2012-04-18
申请人： Shunpei Yamazaki , Toru Takayama , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Toru Takayama , Takeshi Fukunaga
IPC分类号： C23C14/56 , C23C14/24 , C23C14/04 , C23C14/12 , C23C14/54
CPC分类号： C23C14/564 , C23C14/04 , C23C14/12 , C23C14/243 , C23C14/54
摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.
摘要翻译：提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理。因此，附着的气相沉积材料被重新升华，并通过真空泵通过排气除去。通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。

68. 发明授权

US08811064B2 Semiconductor memory device including multilayer wiring layer 有权
标题翻译：半导体存储器件包括多层布线层
公开(公告)号：US08811064B2
公开(公告)日：2014-08-19
申请号：US13344921
申请日：2012-01-06
申请人： Shunpei Yamazaki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： G11C11/24
CPC分类号： H01L27/10808 , G11C5/10 , G11C11/401 , G11C11/4085 , H01L21/84 , H01L23/528 , H01L23/53228 , H01L27/0688 , H01L27/10805 , H01L27/10873 , H01L27/10882 , H01L27/10897 , H01L27/1207 , H01L28/91 , H01L29/7869
摘要： The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.
摘要翻译： DRAM的存储器容量增强。半导体存储器件包括：驱动器电路，其包括单晶半导体衬底的一部分，设置在驱动电路上的多层布线层;以及设置在多层布线层上的存储单元阵列层。也就是说，存储单元阵列与驱动电路重叠。因此，与在含有单晶体半导体材料的基板的同一平面上设置驱动电路和存储单元阵列的情况相比，可以提高半导体存储器件的集成度。

69. 发明授权

US08809992B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08809992B2
公开(公告)日：2014-08-19
申请号：US13356012
申请日：2012-01-23
申请人： Shunpei Yamazaki , Atsuo Isobe , Toshihiko Saito , Takehisa Hatano , Hideomi Suzawa , Shinya Sasagawa , Junichi Koezuka , Yuichi Sato , Shinji Ohno
发明人： Shunpei Yamazaki , Atsuo Isobe , Toshihiko Saito , Takehisa Hatano , Hideomi Suzawa , Shinya Sasagawa , Junichi Koezuka , Yuichi Sato , Shinji Ohno
IPC分类号： H01L29/786
CPC分类号： H01L29/66969 , H01L21/02488 , H01L21/02565 , H01L27/1225 , H01L29/786 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
摘要翻译：提供了包括氧化物半导体并且具有良好的电特性的半导体器件。在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。氧化物半导体膜的侧面与绝缘膜接触。氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。栅极绝缘膜与氧化物半导体膜形成并接触。在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

70. 发明授权

US08809841B2 Light-emitting element, light-emitting device, lighting device, and electronic devices 有权
标题翻译：发光元件，发光装置，照明装置和电子装置
公开(公告)号：US08809841B2
公开(公告)日：2014-08-19
申请号：US13303637
申请日：2011-11-23
申请人： Shunpei Yamazaki , Kunihiko Suzuki , Harue Osaka , Masahiro Takahashi
发明人： Shunpei Yamazaki , Kunihiko Suzuki , Harue Osaka , Masahiro Takahashi
IPC分类号： H01L51/50
CPC分类号： H01L51/5012 , H01L51/006 , H01L51/0072 , H01L51/5016 , H01L51/506 , H01L51/5203 , H01L2251/558
摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.
摘要翻译：至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层发光中心材料共享相同的界面。

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