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    • 62. 发明授权
    • Coating resin compositions
    • 涂料树脂组合物
    • US5414055A
    • 1995-05-09
    • US64650
    • 1993-05-21
    • Yoh SugimuraMotoshi YabutaYoshiyuki YukawaYasuhiro Fujii
    • Yoh SugimuraMotoshi YabutaYoshiyuki YukawaYasuhiro Fujii
    • C08G18/62C08G18/10C08G18/63C08G18/72C09D175/00C09D175/04C08F283/04
    • C08G18/728C08G18/10C08G18/633
    • (1) A coating resin composition consisting essentially of a self-crosslinking resin (I) having at least one hydroxyl group and at least one blocked isocyanate group in the molecule wherein the resin (I) is prepared by reacting some of the free isocyanate groups of a vinyl polymer (A) having at least two free isocyanate groups in the molecule with some of the hydroxyl groups of a polyolefin resin (B) having at least two hydroxyl groups in the molecule, and subsequently reacting a blocking agent with the remaining free isocyanate groups, and (2) a coating resin composition consisting essentially of a self-crosslinking resin (II) having at least one hydroxyl group and at least one blocked isocyanate group in the molecule wherein the resin (II) is prepared by reacting all free isocyanate groups of a vinyl polymer (C) having at least one free isocyanate group and at least one blocked isocyanate group in the molecule with some of the hydroxyl groups of a polyolefin resin (B) having at least two hydroxyl groups in the molecule.
    • (1)一种基本上由分子中具有至少一个羟基和至少一个封端异氰酸酯基的自交联树脂(I)组成的涂料树脂组合物,其中树脂(I)是通过一些游离异氰酸酯基团 的分子中具有至少两个游离异氰酸酯基团的乙烯基聚合物(A),其中在分子中具有至少两个羟基的聚烯烃树脂(B)的一些羟基,然后使封闭剂与剩余的游离的 异氰酸酯基,和(2)主要由在分子中具有至少一个羟基和至少一个封端的异氰酸酯基的自交联树脂(II)组成的涂料树脂组合物,其中树脂(II)通过使全部自由基 在分子中具有至少一个游离异氰酸酯基和至少一个封端异氰酸酯基的乙烯基聚合物(C)的异氰酸酯基团,其中一些聚烯烃树脂(B)的一些羟基具有至少 分子中有两个羟基。
    • 63. 发明授权
    • Semiconductor memory device having function of controlling sense
amplifiers
    • 具有控制读出放大器功能的半导体存储器件
    • US5291447A
    • 1994-03-01
    • US921155
    • 1992-07-29
    • Yukinori KodamaYasuhiro Fujii
    • Yukinori KodamaYasuhiro Fujii
    • G11C11/409G11C7/06G11C7/10H01L21/8242H01L27/10H01L27/108G11C7/00
    • G11C7/1096G11C7/065G11C7/1078
    • A semiconductor memory device includes a memory cell array including a plurality of memory cells provided in the form of a matrix along a plurality of word lines and a plurality of pairs of bit lines, a plurality of sense amplifiers operatively connected to the plurality of pairs of bit lines, and a sense amplifier control unit operatively connected to the plurality of sense amplifiers. When one of the plurality of memory cells is selected and data writing is carried out to the selected memory cell, the sense amplifier control unit selectively inactivates only a sense amplifier corresponding to the selected memory cell among the plurality of sense amplifiers. Thus, it is possible to remove useless dissipation of write current in the data write operation to thereby decrease the dissipated power, while realizing a high speed write operation.
    • 一种半导体存储器件包括存储单元阵列,该存储单元阵列包括沿着多条字线和多对位线以矩阵形式提供的多个存储器单元,多个读出放大器可操作地连接到多对 位线,以及可操作地连接到多个读出放大器的读出放大器控制单元。 当选择多个存储单元之一并对所选存储单元执行数据写入时,读出放大器控制单元仅选择性地使仅在多个读出放大器中与所选存储单元相对应的读出放大器失效。 因此,在实现高速写入操作的同时,可以在数据写入操作中消除写入电流的无用耗散,从而降低耗散功率。
    • 69. 发明申请
    • STORED DATA DEDUPLICATION METHOD, STORED DATA DEDUPLICATION APPARATUS, AND DEDUPLICATION PROGRAM
    • 存储数据分类方法,存储数据分类装置和编码程序
    • US20140229452A1
    • 2014-08-14
    • US14349561
    • 2011-10-06
    • Susumu SeritaYasuhiro Fujii
    • Susumu SeritaYasuhiro Fujii
    • G06F17/30
    • G06F17/30156G06F3/0641G06F11/1453
    • Method of dividing data to be stored in storage device into data fragments; recording the data by using configurations of divided data fragments; judging whether identical data fragments exist in data fragments; when it is judged that identical data fragments exist, storing one of the identical data fragments in storage area of the storage device, and generating and recording data-fragment attribute information indicating an attribute unique to the data fragment stored; upon receipt of request to read data stored in the storage area of the storage device, acquiring the configurations of the data fragments forming the read-target data, reading the corresponding data fragments from the storage area of the storage device, and restoring the data; acquiring and coupling the recorded data fragments to generate concatenation target data targeted for judgment on whether chunk concatenation is possible or not, and detecting whether the concatenation target data has a repeated data pattern
    • 将要存储在存储设备中的数据划分成数据片段的方法; 通过使用分割数据片段的配置来记录数据; 判断数据片段中是否存在相同的数据片段; 当存在相同的数据片段时,将相同数据片段中的一个存储在存储装置的存储区域中,并且生成和记录指示存储的数据片段唯一的属性的数据片段属性信息; 在接收到读取存储在存储装置的存储区域中的数据的请求时,获取构成读取对象数据的数据片段的配置,从存储装置的存储区域读取相应的数据片段,并恢复数据; 获取和耦合记录的数据片段以产生目标的连接目标数据,用于判断是否可以进行组块级联,以及检测级联目标数据是否具有重复的数据模式
    • 70. 发明授权
    • Manufacturing method of semiconductor device and semiconductor device
    • 半导体器件和半导体器件的制造方法
    • US08288232B2
    • 2012-10-16
    • US12687110
    • 2010-01-13
    • Yasuhiro FujiiKazumasa YonekuraTatsunori Kaneoka
    • Yasuhiro FujiiKazumasa YonekuraTatsunori Kaneoka
    • H01L21/8234
    • H01L21/823462H01L21/823418H01L21/823456H01L21/823481H01L29/0653H01L29/42364
    • An improvement is provided in a manufacturing yield of a semiconductor device including transistors in which gate insulating films have different thicknesses. After a high-breakdown-voltage insulating film is formed over a silicon substrate, a surface of the high-breakdown-voltage insulating film is abraded for a reduction in the thickness thereof so that a middle-breakdown-voltage insulating film is formed to be adjacent to the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed by a thermal oxidation method so as to extend from an inside of the main surface of the silicon substrate to an outside thereof. The middle-breakdown-voltage insulating film is formed so as to be thinner than the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed as the gate insulating film of a high-breakdown-voltage MIS transistor, while the middle-breakdown-voltage insulating film is formed as the gate insulating film of a middle-breakdown-voltage MIS transistor.
    • 提供一种半导体器件的制造成品率的提高,该半导体器件包括其中栅绝缘膜具有不同厚度的晶体管。 在硅衬底上形成高耐压绝缘膜之后,高耐压绝缘膜的表面被磨损以减小其厚度,使得中间击穿电压绝缘膜形成为 邻近高耐压绝缘膜。 高耐压绝缘膜通过热氧化法形成,以从硅衬底的主表面的内部延伸到其外部。 中间击穿电压绝缘膜形成为比高击穿电压绝缘膜薄。 高击穿电压绝缘膜形成为高击穿电压MIS晶体管的栅极绝缘膜,而中间击穿电压绝缘膜形成为中间击穿电压MIS晶体管的栅极绝缘膜 。