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61. 发明申请

US20130114628A1 MULTI-WAVELENGTH DBR LASER 审中-公开
标题翻译：多波长DBR激光
公开(公告)号：US20130114628A1
公开(公告)日：2013-05-09
申请号：US13570719
申请日：2012-08-09
申请人： Catherine Genevieve Caneau , Feng Xie , Chung-En Zah
发明人： Catherine Genevieve Caneau , Feng Xie , Chung-En Zah
IPC分类号： H01S5/125
CPC分类号： B82Y20/00 , H01S5/0612 , H01S5/06256 , H01S5/1215 , H01S5/3401 , H01S5/3402
摘要： A multi-wavelength distributed Bragg reflector (DBR) laser diode is provided including front and rear DBR sections and a plurality of dedicated tuning signal control nodes. The front DBR section includes a plurality of front wavelength selective grating sections defining a plurality of distinct grating periodicities λ1*, λ2* . . . corresponding to distinct Bragg wavelengths λS1*, λS2* . . . . The rear DBR section comprises a plurality of rear wavelength selective grating sections defining a plurality of distinct grating periodicities λ1, λ2 . . . corresponding to distinct Bragg wavelengths λS1, λS2 . . . . The tuning signal control nodes are associated with corresponding front wavelength selective grating sections, rear wavelength selective grating sections, or both, such that tuning signals applied to one or more of the dedicated tuning signal control nodes spectrally aligns select Bragg wavelengths λS1*, λS2* . . . of the front DBR section with a selected distinct Bragg wavelengths λS1, λS2 . . . of the rear DBR section.
摘要翻译：提供了多波长分布布拉格反射器（DBR）激光二极管，其包括前后DBR部分和多个专用调谐信号控制节点。前DBR部分包括限定多个不同光栅周期性λ1*，λ2*的多个前波长选择光栅部分。。。对应于不同的布拉格波长λS1*，λS2*。。。。后DBR部分包括限定多个不同的光栅周期性λ1，λ2的多个后波长选择光栅部分。。。对应于不同的布拉格波长λS1，λS2。。。。调谐信号控制节点与对应的前波长选择光栅部分，后波长选择光栅部分或两者相关联，使得施加到一个或多个专用调谐信号控制节点的调谐信号使选择布拉格波长λS1*，λS2* 。。。具有选定的不同布拉格波长λS1，λS2的前DBR部分。。。的后DBR部分。

62. 发明申请

US20130044783A1 HOLE BLOCKING LAYERS IN NON-POLAR AND SEMI-POLAR GREEN LIGHT EMITTING DEVICES 失效
标题翻译：非极性和半极绿色发光装置中的阻塞层
公开(公告)号：US20130044783A1
公开(公告)日：2013-02-21
申请号：US13210456
申请日：2011-08-16
申请人： Rajaram Bhat , Dmitry S. Sizov , Chung-En Zah
发明人： Rajaram Bhat , Dmitry S. Sizov , Chung-En Zah
IPC分类号： H01S5/026 , H01L33/04
CPC分类号： H01S5/2004 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region.
摘要翻译：提供发光器件，其包括插入在器件的n型和p型侧之间的有源区和插入在器件的有源区和n型侧之间的空穴阻挡层。有源区域包括有源MQW结构，并且被配置用于在光谱的绿色部分中电泵浦受激发射的光子。发光器件的n型侧包括n掺杂半导体区域。发光器件的p型侧包括p掺杂半导体区域。 n掺杂半导体区域包括n掺杂的非极性或n掺杂的半极性衬底。根据本公开的空穴阻挡层包括n掺杂半导体材料，并且介于非极性或半极性衬底和发光器件的有源区之间。空穴阻挡层（HBL）组合物的特征在于具有比有源区的量子阱势垒层更宽的带隙。

63. 发明授权

US08217498B2 Gallium nitride semiconductor device on SOI and process for making same 失效
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：US08217498B2
公开(公告)日：2012-07-10
申请号：US11975289
申请日：2007-10-18
申请人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
发明人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
IPC分类号： H01L21/36
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

64. 发明授权

US08121165B2 MQW laser structure comprising plural MQW regions 有权
标题翻译： MQW激光器结构包括多个MQW区域
公开(公告)号：US08121165B2
公开(公告)日：2012-02-21
申请号：US13161962
申请日：2011-06-16
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01S5/00
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/041 , H01S5/20 , H01S5/2004 , H01S5/34333
摘要： Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
摘要翻译：提供了包括有源和/或无源MQW区域的多量子阱激光器结构。每个MQW区域包括多个量子阱和中间势垒层。相邻的MQW区域被间隔层隔开，该隔离层比中间的阻挡层厚。量子阱的带隙低于中间势垒层和间隔层的带隙。有源区可以包括有源和无源MQW，并且被配置用于电泵浦受激发射的光子，或者其可以包括配置用于光泵浦激发的光子发射的有源MQW区域。

65. 发明授权

US07981591B2 Semiconductor buried grating fabrication method 有权
标题翻译：半导体埋光栅制作方法
公开(公告)号：US07981591B2
公开(公告)日：2011-07-19
申请号：US12079524
申请日：2008-03-27
申请人： Yabo Li , Kechang Song , Nicholas John Visovsky , Chung-En Zah
发明人： Yabo Li , Kechang Song , Nicholas John Visovsky , Chung-En Zah
IPC分类号： G03F7/26
CPC分类号： G03F7/0005 , G02B6/124 , G02B6/136 , H01S5/12
摘要： Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.
摘要翻译：在半导体激光器结构中形成光栅轮廓的方法包括以下步骤：提供包括晶片衬底的半导体晶片，设置在晶片衬底上的蚀刻停止层，设置在蚀刻停止层上方的光栅层，设置在光栅上的蚀刻掩模层层和设置在蚀刻掩模层上的光致抗蚀剂层，形成光致抗蚀剂光栅图案，通过干蚀刻将光致抗蚀剂光栅图案转移到光栅层中，以及去除光致抗蚀剂层，选择性地湿蚀刻光栅层以形成光栅轮廓光栅层。在蚀刻掩模和蚀刻停止层之间放置光栅层控制选择性湿蚀刻步骤。该方法还包括通过选择性湿蚀刻去除蚀刻掩模层而不改变光栅轮廓，并且重新生长上覆层以产生半导体激光器结构。

66. 发明申请

US20110128984A1 NATIVE GREEN LASER SEMICONDUCTOR DEVICES 有权
标题翻译：本色绿色激光半导体器件
公开(公告)号：US20110128984A1
公开(公告)日：2011-06-02
申请号：US12627814
申请日：2009-11-30
申请人： Rajaram Bhat , Chad Stephen Gallinat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Chad Stephen Gallinat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/041 , H01S5/2201 , H01S5/305 , H01S5/3202
摘要： A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range.
摘要翻译：一种半导体激光器件，其可操作以发射具有所需波长的光在绿色光谱范围内。半导体激光器件可以包括泵浦源和包括衬底，第一覆层和一个或多个有源区域层的激光器结构。一个或多个有源区层包括多个量子阱，其具有在参考泵浦功率密度下大于约520nm的自发发射峰值波长。泵浦源被配置为以泵浦功率密度泵送每个量子阱，使得每个量子阱的受激发射峰值在绿色光谱范围内，并且一个或多个有源区域层内的量子阱的数量使得量子阱的净光学增益大于在绿色光谱范围内所需波长的净光学损耗系数。

67. 发明申请

US20110072886A1 Gas Sensor Based On Photoacoustic Detection 审中-公开
标题翻译：基于光声检测的气体传感器
公开(公告)号：US20110072886A1
公开(公告)日：2011-03-31
申请号：US12570606
申请日：2009-09-30
申请人： Catherine Genevieve Caneau , Anping Liu , Scott Christopher Pollard , Feng Xie , Chung-En Zah
发明人： Catherine Genevieve Caneau , Anping Liu , Scott Christopher Pollard , Feng Xie , Chung-En Zah
IPC分类号： G01N21/00
CPC分类号： G01N21/1702 , G01N2021/1704
摘要： A photoacoustic gas detector and photoacoustic gas detection method are disclosed. The detector includes a laser source, an acoustic resonator, and at least one tuning fork positioned along a longitudinal length of the resonator. The detector is capable of performing fast measurements of the concentration of one or more target gases over a broad temperature range.
摘要翻译：公开了一种光声气体检测器和光声气体检测方法。检测器包括激光源，声谐振器和沿着谐振器的纵向长度定位的至少一个音叉。检测器能够在宽的温度范围内快速测量一种或多种目标气体的浓度。

68. 发明申请

US20080299691A1 GaN lasers on ALN substrates and methods of fabrication 失效
标题翻译： ALN衬底上的GaN激光器和制造方法
公开(公告)号：US20080299691A1
公开(公告)日：2008-12-04
申请号：US11893188
申请日：2007-08-15
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01L21/02 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/183 , H01S5/3201 , H01S5/3216 , H01S2301/173
摘要： Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga(In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer where the substrate, the lattice adjustment layer, the lower cladding region, the active waveguiding region, the upper cladding region, and the N and P type contact regions of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.
摘要翻译：提出了Ga（In）N基激光器结构及相关的制造方法，其中以Al（N）或GaN衬底形成Ga（In）N基半导体激光器结构，以满足在半导体结构中避免不适当拉伸应变的需要。根据本发明的一个实施例，在设置有AlGaN晶格调整层的AlN或GaN衬底上设置Ga（In）N基半导体激光器，其中衬底，晶格调整层，下包层区域，有源波导区域，上覆层区域和激光器的N和P型接触区域形成半导体激光器中的组成连续体。公开并要求保护附加实施例。

69. 发明授权

US07388892B2 System and method for optically powering a remote network component 有权
标题翻译：用于对远程网络组件进行光学供电的系统和方法
公开(公告)号：US07388892B2
公开(公告)日：2008-06-17
申请号：US11015109
申请日：2004-12-17
申请人： Nobuhiko Nishiyama , Michael Sauer , Chung-En Zah
发明人： Nobuhiko Nishiyama , Michael Sauer , Chung-En Zah
IPC分类号： H01S3/00
CPC分类号： H04B10/807
摘要： Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.
摘要翻译：提供了用于光网络组件（诸如微微小区的应答器）的系统和方法。该系统包括用于处理输入信号的垂直腔表面发射激光器（VCSEL），位于远端的光功率源，以及用于将光功率从源极传导到VCSEL的光纤。 VCSEL可以由耦合到光纤的光电转换器产生的电流电偏置，或者从光功率源的光直接光偏置。偏置三通连接在VCSEL的输入信号和输入端之间，使得VCSEL产生调制的光信号。该系统可以是微微蜂窝系统的应答器，其中VCSEL通过相同或单独的光纤产生传导到头端电路的光上行链路信号。

70. 发明申请

US20060120416A1 Method and device for performing wavelength modulation with distributed bragg reflector (DBR) laser 失效
标题翻译：用分布式布拉格反射器（DBR）激光器进行波长调制的方法和装置
公开(公告)号：US20060120416A1
公开(公告)日：2006-06-08
申请号：US11002978
申请日：2004-12-03
申请人： Martin Hu , Chung-En Zah
发明人： Martin Hu , Chung-En Zah
IPC分类号： H01S3/10
CPC分类号： H01S5/06256 , H01S5/0092 , H01S5/06253 , H04N9/3129
摘要： The present invention is directed to a method and system for providing phase modulated current to a semiconductor laser to control beam wavelength. A first current is received into a gain portion of the semiconductor laser and a second current is received into a DBR portion of the semiconductor laser. The second current is phase modulated based upon a required intensity value. An output beam is generated by the semiconductor laser based upon the received first current and the received second current.
摘要翻译：本发明涉及一种用于向半导体激光器提供相位调制电流以控制波束波长的方法和系统。第一电流被接收到半导体激光器的增益部分中，并且第二电流被接收到半导体激光器的DBR部分中。第二电流根据所需的强度值进行相位调制。基于所接收的第一电流和所接收的第二电流，由半导体激光器产生输出光束。

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