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61. 发明授权

US08807812B2 Light emitting device, illuminating device, and headlamp 有权
标题翻译：发光装置，照明装置和前照灯
公开(公告)号：US08807812B2
公开(公告)日：2014-08-19
申请号：US13362815
申请日：2012-01-31
申请人： Katsuhiko Kishimoto , Shigetoshi Ito
发明人： Katsuhiko Kishimoto , Shigetoshi Ito
IPC分类号： F21V7/04 , F21S8/10 , G03B21/20
CPC分类号： F21S48/1159 , F21S41/147 , F21S41/16 , F21S41/24 , G03B21/204
摘要： A light emitting device of the present invention includes: an LD chip for emitting excitation light; a light emitting body for emitting fluorescence upon irradiation with the excitation light from the LD chip; and a mirror including a light reflecting concave surface for reflecting the fluorescence from the light emitting body, the light reflecting concave surface of the mirror having a through-hole at a region other than a bottom region in the vicinity of the bottom of the light reflecting concave surface, and a truncated pyramid light converging section being inserted into the through-hole in order to guide the excitation light from the LD chip to the light emitting body.
摘要翻译：本发明的发光器件包括：用于发射激发光的LD芯片; 用于从LD芯片照射激发光时发出荧光的发光体; 以及反射镜，其具有用于反射来自发光体的荧光的光反射凹面，反射镜的光反射凹面在反射光的底部附近的底部区域以外的区域具有通孔凹入的表面和截锥形的会聚部分插入到通孔中，以将激发光从LD芯片引导到发光体。

62. 发明申请

US20130027951A1 ILLUMINATION DEVICE AND VEHICLE HEADLAMP INCLUDING THE ILLUMINATION DEVICE 审中-公开
标题翻译：照明装置和包括照明装置的车辆头灯
公开(公告)号：US20130027951A1
公开(公告)日：2013-01-31
申请号：US13555839
申请日：2012-07-23
申请人： Koji TAKAHASHI , Shigetoshi Ito , Yoshiyuki Takahira
发明人： Koji TAKAHASHI , Shigetoshi Ito , Yoshiyuki Takahira
IPC分类号： B60Q1/06 , F21V9/16 , F21V21/00 , B60Q1/04
CPC分类号： B60Q1/085 , B60Q1/12 , B60Q2300/45 , F21S41/14 , F21S41/143 , F21S41/147 , F21S41/16 , F21S41/176 , F21S41/18 , F21S41/255 , F21S41/321 , F21S41/36 , F21S41/365 , F21S41/675 , F21S45/70 , F21W2102/17 , F21W2102/19 , F21Y2113/00 , F21Y2115/30 , G02B19/0028 , G02B19/0061 , G02B2207/113
摘要： A headlamp system in accordance with the present invention includes (i) a laser light source unit including a light emitting section that emits light upon reception of a laser beam and (ii) an LED light source unit including an LED. The laser light source unit distributes light to a light-distributed spot, and the LED light source unit distributes light to a light-distributed area.
摘要翻译：根据本发明的前照灯系统包括（i）激光源单元，其包括在接收激光束时发光的发光部分和（ii）包括LED的LED光源单元。激光光源单元将光分配到光分布点，并且LED光源单元将光分配到光分布区域。

63. 发明申请

US20120195057A1 LIGHT EMITTING DEVICE, ILLUMINATING DEVICE, AND HEADLAMP 有权
标题翻译：发光装置，照明装置和头灯
公开(公告)号：US20120195057A1
公开(公告)日：2012-08-02
申请号：US13362815
申请日：2012-01-31
申请人： Katsuhiko Kishimoto , Shigetoshi Ito
发明人： Katsuhiko Kishimoto , Shigetoshi Ito
IPC分类号： B60Q1/04 , F21K2/00
CPC分类号： F21S48/1159 , F21S41/147 , F21S41/16 , F21S41/24 , G03B21/204
摘要： A light emitting device of the present invention includes: an LD chip for emitting excitation light; a light emitting body for emitting fluorescence upon irradiation with the excitation light from the LD chip; and a mirror including a light reflecting concave surface for reflecting the fluorescence from the light emitting body, the light reflecting concave surface of the mirror having a through-hole at a region other than a bottom region in the vicinity of the bottom of the light reflecting concave surface, and a truncated pyramid light converging section being inserted into the through-hole in order to guide the excitation light from the LD chip to the light emitting body.
摘要翻译：本发明的发光器件包括：用于发射激发光的LD芯片; 用于从LD芯片照射激发光时发出荧光的发光体; 以及反射镜，其具有用于反射来自发光体的荧光的光反射凹面，反射镜的光反射凹面在反射光的底部附近的底部区域以外的区域具有通孔凹入的表面和截锥形的会聚部分插入到通孔中，以将激发光从LD芯片引导到发光体。

64. 发明申请

US20110101881A1 LIGHT EMITTING APPARATUS, METHOD FOR DRIVING THE LIGHT EMITTING APPARATUS, AND DISPLAY APPARATUS INCLUDING THE LIGHT EMITTING APPARATUS 有权
标题翻译：发光装置，用于驱动发光装置的方法，以及包括发光装置的显示装置
公开(公告)号：US20110101881A1
公开(公告)日：2011-05-05
申请号：US12987676
申请日：2011-01-10
申请人： Takeshi KAMIKAWA , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi KAMIKAWA , Shigetoshi Ito , Mototaka Taneya
IPC分类号： H05B41/16
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
摘要翻译：发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

65. 发明申请

US20110068679A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110068679A1
公开(公告)日：2011-03-24
申请号：US12994583
申请日：2009-05-25
申请人： Makoto Sawamura , Shigetoshi Ito , Shuichi Hirukawa
发明人： Makoto Sawamura , Shigetoshi Ito , Shuichi Hirukawa
IPC分类号： H01J1/62 , H01K1/30
CPC分类号： H01L33/505 , H01L33/483 , H01L33/507 , H01L2224/48091 , H01S5/02212 , H01S5/02288 , H01L2924/00014
摘要： Provided is a light emitting device of which manufacturing cost can be reduced by suppressing reduction in yield. The present invention relates to a light emitting device including a light emitting element (11), a cap (20) sealing the light emitting element (11), and a light conversion structural section (16) covering an upper surface of the cap (20), wherein the cap (20) includes a base section (14) having a hole for taking out light emitted from the light emitting element (11), and a glass section (15) overlaid on the hole, the glass section (15) is provided outside the base section (14), and the light conversion structural section (16) is provided outside the glass section (15).
摘要翻译：提供了通过抑制产量降低可以降低制造成本的发光装置。本发明涉及包括发光元件（11），密封发光元件（11）的盖（20）和覆盖盖（20）的上表面的光转换结构部分（16）的发光器件），其中所述盖（20）包括具有用于取出从所述发光元件（11）发射的光的孔的基部（14）和覆盖在所述孔上的玻璃部（15），所述玻璃部（15）设置在所述基部（14）的外侧，并且所述光转换结构部（16）设置在所述玻璃部（15）的外部。

66. 发明授权

US07781244B2 Method of manufacturing nitride-composite semiconductor laser element, with disclocation control 有权
标题翻译：具有位移控制的氮化物复合半导体激光元件的制造方法
公开(公告)号：US07781244B2
公开(公告)日：2010-08-24
申请号：US12211577
申请日：2008-09-16
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L21/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调节至40μm以上。

67. 发明申请

US20090236585A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING IT, AND SEMICONDUCTOR OPTICAL APPARATUS 有权
标题翻译：氮化物半导体发光器件，其制造方法和半导体光学器件
公开(公告)号：US20090236585A1
公开(公告)日：2009-09-24
申请号：US12366480
申请日：2009-02-05
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L33/00 , H01S5/00 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

68. 发明授权

US07573446B2 Method and device for driving LED element, illumination apparatus, and display apparatus 失效
标题翻译：用于驱动LED元件，照明装置和显示装置的方法和装置
公开(公告)号：US07573446B2
公开(公告)日：2009-08-11
申请号：US11043938
申请日：2005-01-28
申请人： Yoshinobu Kawaguchi , Shigetoshi Ito
发明人： Yoshinobu Kawaguchi , Shigetoshi Ito
IPC分类号： G09G3/32
CPC分类号： H05B33/0869 , H05B33/0803 , H05B33/0818 , H05B33/086 , H05B33/0863
摘要： A driving method and a driving device are provided for an LED element in which light emitting layers different from each other in light emission wavelength peak, put on each other with a barrier layer being interposed, are sandwiched by a pair of p-type and n-type layers, and color of emitted light from which substantially depends only upon driving current value. The method comprises a driving current value calculation step of obtaining a value for designating a current value corresponding to a desired color of emitted light from the LED element; a driving current generation step of generating a driving current having the current value designated by the value obtained in the driving current value calculation step; and a driving current supply step of supplying the LED element with the driving current generated in the driving current generation step.
摘要翻译：提供了一种用于LED元件的驱动方法和驱动装置，其中插入有阻挡层的发光波长峰值彼此不同的发光层被夹在一起，由一对p型和n型型层，以及基本上仅取决于驱动电流值的发射光的颜色。该方法包括驱动电流值计算步骤，用于获得用于指定与来自LED元件的发射光的期望颜色相对应的电流值的值; 驱动电流产生步骤，产生具有由所述驱动电流值计算步骤中获得的值指定的电流值的驱动电流; 以及向所述LED元件供给在所述驱动电流产生步骤中产生的驱动电流的驱动电流供给步骤。

69. 发明申请

US20090116528A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20090116528A1
公开(公告)日：2009-05-07
申请号：US12285337
申请日：2008-10-02
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa , Shigetoshi Ito
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa , Shigetoshi Ito
IPC分类号： H01S5/04
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0287 , H01S5/2214 , H01S5/3202
摘要： A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet.
摘要翻译：氮化物半导体激光器件具有通过堆叠由六方氮化物半导体制成的多个氮化物半导体层而形成的多层结构，而多层结构设置有用于引导激光束的波导结构，形成多层结构的氮化物半导体层被堆叠在与构成氮化物半导体层的六方氮化物半导体的c轴大致垂直的方向上，形成波导结构的侧面的第一空腔面是具有Ga极性的c面，形成另一侧的第二腔面与第一腔面相对的波导结构的表面是具有N极性的c面，在第一腔面的表面上形成结晶含氮膜，第一腔面的反射率小于第二腔面的反射率。

70. 发明授权

US07012283B2 Nitride semiconductor light emitting element and optical device containing it 失效
标题翻译：氮化物半导体发光元件和含有它的光学装置
公开(公告)号：US07012283B2
公开(公告)日：2006-03-14
申请号：US10381113
申请日：2001-09-17
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Masahiro Araki
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Masahiro Araki
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/34346
摘要： According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer (106) having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN1−x−y−zAsxPySbz (0
摘要翻译：根据本发明的一个方面，氮化物半导体发光器件包括具有量子阱结构的发光层（106），其量子阱层和势垒层交替层叠。阱层由包含In的氮化物半导体形成，并且阻挡层由含有As，P或Sb的氮化物半导体层形成。根据本发明的另一方面，氮化物半导体发光器件包括具有量子阱结构的发光层，其量子阱层和阻挡层交替层叠。阱层由GaN 1-xyz（0

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