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61. 发明申请

US20120035364A1 TETRATHIAFULVALENE DERIVATIVE, AND ORGANIC FILM AND ORGANIC TRANSISTOR USING THE SAME 失效
标题翻译：四面体衍生物，有机膜和有机晶体管
公开(公告)号：US20120035364A1
公开(公告)日：2012-02-09
申请号：US13259535
申请日：2010-03-17
申请人： Masato Shinoda , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takashi Okada , Daisuke Goto , Shinji Matsumoto , Masataka Mohri
发明人： Masato Shinoda , Satoshi Yamamoto , Toshiya Sagisaka , Takuji Kato , Takashi Okada , Daisuke Goto , Shinji Matsumoto , Masataka Mohri
IPC分类号： C07D495/04 , C07D409/04
CPC分类号： C07D339/06 , C07D495/04 , H01L51/0074 , H01L51/0545 , H01L51/0558
摘要： A tetrathiafulvalene derivative expressed by General Formula (I): General Formula (I) in General Formula (I), X represents an atom selected from a carbon atom, a sulfur atom, and a nitrogen atom, and Xs may be the same or different; provided that when X is the carbon atom or the nitrogen atom, R1 to R8 each represent one of a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, and a substituted or unsubstituted thioalkoxy group, and may be the same or different; and Y1 and Y2 each represent one of structures expressed by General Formulas (II) and (III), and may be the same or different: General Formula (II) General Formula (III).
摘要翻译：由通式（I）表示的四硫富瓦烯衍生物：通式（I）中的通式（I），X表示选自碳原子，硫原子和氮原子的原子，X可以相同或不同 ; 条件是当X是碳原子或氮原子时，R 1至R 8各自表示氢原子，卤素原子，取代或未取代的烷基，取代或未取代的烷氧基和取代或未取代的硫代烷氧基中的一个，并且可以相同或不同; 并且Y1和Y2各自表示通式（II）和（III）表示的结构之一，并且可以相同或不同：通式（II）通式（III）。

62. 发明申请

US20110124761A1 CHLORINATED POLYETHER AND POLYURETHANE OBTAINED THEREFROM 有权
标题翻译：氯化聚乙烯和由其获得的聚氨酯
公开(公告)号：US20110124761A1
公开(公告)日：2011-05-26
申请号：US12995634
申请日：2009-06-09
申请人： Takashi Okada , Megumi Okada , Mayuko Okada , Yuko Okada
发明人： Takashi Okada , Megumi Okada , Mayuko Okada , Yuko Okada
IPC分类号： C08G18/00 , C07C43/12 , C07C41/02 , C08J9/00
CPC分类号： C08G18/5009 , C07C43/11 , C08G18/3206 , C08G18/6674 , C08G65/223 , C08G2101/00 , C08G2101/0083
摘要： Provided is a chlorinated polyether which has excellent solubility in solvents and excellent thermal stability, has the excellent effect of improving the adhesion of coating materials, inks, and adhesives to polyolefins, can be expected to be usable as a flame retardant, and is useful also as a novel starting material for polyurethanes. The polyether is a novel chlorinated polyether containing, as a repeating unit, at least one of the chlorinated-ether residue represented by the following formula (1) and the chlorinated-ether residue represented by the following formula (2). Also provided is a novel polyurethane obtained therefrom.
摘要翻译：提供了在溶剂中具有优异的溶解性和优异的热稳定性的氯化聚醚，具有改善涂料，油墨和粘合剂对聚烯烃的粘附性的优异效果，可以预期可用作阻燃剂，并且也是有用的作为聚氨酯的新型起始材料。聚醚是含有下述式（1）所示的氯代醚残基和下述式（2）表示的氯代醚残基中的至少一种作为重复单元的新型氯化聚醚。还提供了由其获得的新型聚氨酯。

63. 发明授权

US07939927B2 Semiconductor memory apparatus 有权
标题翻译：半导体存储装置
公开(公告)号：US07939927B2
公开(公告)日：2011-05-10
申请号：US12396017
申请日：2009-03-02
申请人： Takashi Okada
发明人： Takashi Okada
IPC分类号： H01L25/065 , H01L23/48
CPC分类号： H01L25/18 , H01L27/11551 , H01L27/11578 , H01L2224/48145 , H01L2225/06506 , H01L2225/0651 , H01L2924/01078 , H01L2924/00012
摘要： The semiconductor memory apparatus related to an embodiment of the present invention includes a wiring substrate arranged with a device mounting part and connection pads aligned along one exterior side of the wiring substrate, a plurality of semiconductor memory devices including electrode pads which are arranged along one external side of the wiring substrate, a semiconductor memory device group in which the plurality of semiconductor memory devices are stacked on the device mounting part of the wiring substrate so that pad arrangement sides all face in the same direction, and a controller device including the electrode pads arranged along at least one external side of the wiring substrate, wherein the electrode pads of the plurality of semiconductor memory devices and the electrode pads of the controller device are arranged parallel to an arrangement position of the connection pads of the wiring substrate.
摘要翻译：与本发明的实施方式有关的半导体存储装置具备配置有沿着配线基板的一个外侧配置的器件安装部和连接焊盘的布线基板，具有沿着一个外部配置的电极焊盘的多个半导体存储器件所述半导体存储装置组中，所述多个半导体存储装置堆叠在所述布线基板的所述装置安装部上，使得所述焊盘排列侧均朝向相同的方向，以及控制装置，所述控制装置包括所述电极焊盘沿着布线基板的至少一个外侧布置，其中多个半导体存储器件的电极焊盘和控制器装置的电极焊盘平行于布线基板的连接焊盘的布置位置布置。

64. 发明申请

US20110103133A1 MEMORY CELL ARRAY, NONVOLATILE STORAGE DEVICE, MEMORY CELL, AND METHOD OF MANUFACTURING MEMORY CELL ARRAY 有权
标题翻译：存储单元阵列，非易失存储器件，存储器单元及其制造存储器单元阵列的方法
公开(公告)号：US20110103133A1
公开(公告)日：2011-05-05
申请号：US13001695
申请日：2010-05-28
申请人： Takashi Okada , Takumi Mikawa , Koji Arita
发明人： Takashi Okada , Takumi Mikawa , Koji Arita
IPC分类号： G11C11/00 , H01L45/00 , H01L21/02
CPC分类号： H01L27/101 , H01L27/2418 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A method of manufacturing a memory cell array in which first conductive layers (2) and second conductive layers (14) extend above a semiconductor substrate (1) and three-dimensionally cross with each other, and memory cells each of which includes a current steering element (10) and a variable resistance element (23) electrically connected in series to each other is provided at a corresponding one of three-dimensional cross points between the first conductive layers (2) and the second conductive layers (14). The method includes: forming a first interlayer insulating film (3); forming a contact hole in the interlayer insulating film (3); depositing a first plug material (4) in the contact hole and on the first interlayer insulating film (3); performing a first polishing in which the first plug material (4) is polished until the first interlayer insulating film (3) is exposed; depositing a conductive film (6a) that becomes a first electrode (6) of the current steering element (10), on the first plug material (4) and the first interlayer insulating film (3) after the first polishing; and performing a second polishing in which a surface of the conductive film (6a) is polished.
摘要翻译：一种制造存储单元阵列的方法，其中第一导电层（2）和第二导电层（14）在半导体衬底（1）上方延伸并且彼此三维交叉，并且每个存储单元包括电流转向在第一导电层（2）和第二导电层（14）之间的三维交叉点中的相应一个处提供元件（10）和彼此串联电连接的可变电阻元件（23）。该方法包括：形成第一层间绝缘膜（3）; 在层间绝缘膜（3）中形成接触孔; 在所述接触孔和所述第一层间绝缘膜（3）上沉积第一插塞材料（4）; 执行抛光所述第一插塞材料（4）直到所述第一层间绝缘膜（3）露出的第一抛光; 在第一次抛光之后，在第一插头材料（4）和第一层间绝缘膜（3）上沉积成为当前操舵元件（10）的第一电极（6）的导电膜（6a）并进行抛光导电膜（6a）的表面的第二研磨。

65. 发明授权

US07911707B2 Zoom lens and image pickup apparatus having the same 有权
标题翻译：具有相同的变焦镜头和摄像装置
公开(公告)号：US07911707B2
公开(公告)日：2011-03-22
申请号：US12511946
申请日：2009-07-29
申请人： Takashi Okada
发明人： Takashi Okada
IPC分类号： G02B15/14 , H04N5/262
CPC分类号： G02B15/177
摘要： A zoom lens includes, in order from an object side to an image side, a first lens unit having a negative refractive power, a second lens unit having a positive refractive power, a third lens unit having a negative refractive power, and a fourth lens unit having a positive refractive power. In the zoom lens, an interval between every adjacent ones of the first through fourth lens units varies during zooming, the second lens unit includes at least one negative lens, and the third lens unit includes at least one positive lens. An Abbe number and a relative partial dispersion of a material of the at least one negative lens (νd2N, θgF2N) and an Abbe number and a relative partial dispersion of a material of the at least one positive lens (νd3P, θgF3P) are appropriately set.
摘要翻译：变焦透镜从物体侧到像侧依次包括具有负屈光力的第一透镜单元，具有正折光力的第二透镜单元，具有负折光力的第三透镜单元和第四透镜具有正屈光力的单元。在变焦透镜中，第一至第四透镜单元中的每个相邻的透镜单元之间的间隔在变焦期间变化，第二透镜单元包括至少一个负透镜，并且第三透镜单元包括至少一个正透镜。所述至少一个负透镜（＆ngr; d2N，＆het; gF2N）的材料的阿贝数和阿贝数和相对部分色散以及所述至少一个正透镜（＆ngr; d3P）的材料的阿贝数和相对部分色散，＆thetas; gF3P）。

66. 发明授权

US07872808B2 Zoom lens system and camera including the same 有权
标题翻译：变焦镜头系统和相机包括相同
公开(公告)号：US07872808B2
公开(公告)日：2011-01-18
申请号：US12476571
申请日：2009-06-02
申请人： Takashi Okada
发明人： Takashi Okada
IPC分类号： G02B15/14
CPC分类号： G02B15/161 , G02B15/173
摘要： A zoom lens system includes, in order from an object side to an image side, a first lens unit having positive optical power, a second lens unit having negative optical power, and a rear unit including at least one lens unit. During zooming, at least two lens units move so that intervals between the lens units adjacent to each other change. In such a zoom lens system, the second lens unit consists of a negative lens component formed of at least one material and a positive lens element, which are arranged in the stated order from the object side to the image side. A refractive index and an Abbe number of the at least one material forming the negative lens component and a refractive index of a material forming the positive lens element are appropriately set, whereby high optical performance is obtained.
摘要翻译：变焦透镜系统从物体侧到像侧依次包括具有正光焦度的第一透镜单元，具有负光焦度的第二透镜单元和包括至少一个透镜单元的后单元。在变焦期间，至少两个透镜单元移动，使得彼此相邻的透镜单元之间的间隔变化。在这样的变焦透镜系统中，第二透镜单元由从物体侧到像侧按顺序排列的由至少一种材料和正透镜元件形成的负透镜部件组成。适当地设定形成负透镜成分的至少一种材料的折射率和阿贝数以及形成正透镜元件的材料的折射率，从而获得高的光学性能。

67. 发明申请

US20100295012A1 NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储元件和非易失性存储器件
公开(公告)号：US20100295012A1
公开(公告)日：2010-11-25
申请号：US12863535
申请日：2009-11-18
申请人： Takumi Mikawa , Kiyotaka Tsuji , Takashi Okada
发明人： Takumi Mikawa , Kiyotaka Tsuji , Takashi Okada
IPC分类号： H01L27/10 , H01L45/00
CPC分类号： G11C13/003 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/32 , G11C2213/56 , G11C2213/72 , G11C2213/76 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： A nonvolatile memory element comprises a resistance variable element 105 configured to reversibly change between a low-resistance state and a high-resistance state in response to electric signals with different polarities which are applied thereto; and a current controlling element 112 configured such that when a current flowing when a voltage whose absolute value is a first value as a desired value which is larger than 0 and smaller than a predetermined voltage value and whose polarity is a first polarity is applied is a first current and a current flowing when a voltage whose absolute value is the first value and whose polarity is a second polarity different from the first polarity is applied is a second current, the first current is higher than the second current, and the resistance variable element is connected in series with the current controlling element such that a polarity of a voltage applied to the current controlling element when the resistance variable element is changed from the low-resistance state to the high-resistance state is the first polarity.
摘要翻译：非易失性存储元件包括电阻可变元件105，其被配置为响应于施加到其上的具有不同极性的电信号在低电阻状态和高电阻状态之间可逆地变化; 以及电流控制元件112，被配置为当施加绝对值为第一值的电压作为大于0且小于预定电压值且极性为第一极性的期望值的电流流过的电流控制元件112为当施加绝对值为第一值且极性为与第一极性不同的第二极性的电压时的第一电流和电流是第二电流，第一电流高于第二电流，并且电阻可变元件与电流控制元件串联连接，使得当电阻可变元件从低电阻状态改变为高电阻状态时施加到电流控制元件的电压的极性是第一极性。

68. 发明申请

US20100208784A1 MOBILE COMMUNICATION TERMINAL AND CONTROL METHOD THEREFOR 失效
标题翻译：移动通信终端及其控制方法
公开(公告)号：US20100208784A1
公开(公告)日：2010-08-19
申请号：US12707189
申请日：2010-02-17
申请人： Hidetoshi SUZUKI , Takashi Okada , Shinsuke Ogawa , Shinya Oka
发明人： Hidetoshi SUZUKI , Takashi Okada , Shinsuke Ogawa , Shinya Oka
IPC分类号： H04B17/00 , H04K1/10
CPC分类号： H04W52/029 , Y02D70/00
摘要： A determiner determines whether or not a mobile communication terminal is in a standby mode. A fast Fourier transform calculator demodulates a signal which is received at the mobile communication terminal. A controller causes the fast Fourier transform calculator to vary at least one of a frequency range for fast Fourier transform or a number of frequency samples used by the fast Fourier transform calculator, depending on determination by the determiner. Preferably, the controller is adapted to cause the fast Fourier transform calculator to vary at least one of the frequency range for fast Fourier transform or the number of frequency samples used by the fast Fourier transform calculator based on information about frequencies used in communication from a radio base station to the mobile communication terminal and notified from the radio base station.
摘要翻译：确定器确定移动通信终端是否处于待机模式。快速傅里叶变换计算器解调在移动通信终端处接收的信号。取决于确定器的确定，控制器使快速傅里叶变换计算器改变用于快速傅里叶变换的频率范围或快速傅里叶变换计算器使用的频率样本数中的至少一个。优选地，控制器适于使快速傅里叶变换计算器基于关于来自无线电的通信中使用的频率的信息来改变快速傅里叶变换的频率范围或快速傅立叶变换计算器使用的频率样本的数量中的至少一个基站到移动通信终端，并从无线基站通知。

69. 发明申请

US20100193760A1 CURRENT RESTRICTING ELEMENT, MEMORY APPARATUS INCORPORATING CURRENT RESTRICTING ELEMENT, AND FABRICATION METHOD THEREOF 有权
标题翻译：电流限制元件，包含电流限制元件的记忆装置及其制造方法
公开(公告)号：US20100193760A1
公开(公告)日：2010-08-05
申请号：US12669174
申请日：2008-07-11
申请人： Takeshi Takagi , Takumi Mikawa , Koji Arita , Mitsuteru Iijima , Takashi Okada
发明人： Takeshi Takagi , Takumi Mikawa , Koji Arita , Mitsuteru Iijima , Takashi Okada
IPC分类号： H01L45/00 , H01L27/04 , H01L21/02
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/24 , H01L45/00
摘要： In a current rectifying element (10), a barrier height φA of a center region (14) of a barrier layer (11) in a thickness direction thereof sandwiched between a first electrode layer (12) and a second electrode layer (13) is formed to be larger than a barrier height φB of a region in the vicinity of an interface (17) between the barrier layer (11) and the first electrode layer (12) and an interface (17) between the barrier layer (11) and the second electrode layer (13). The barrier layer (11) has, for example, a triple-layer structure of barrier layers (11a), (11b) and (11c). The barrier layers (11a), (11b) and (11c) are, for example, formed by SiN layers of SiNx2, SiNx1, and SiNx1 (X1
摘要翻译：在电流整流元件（10）中，阻挡层（11）在其厚度方向上的中心区域（14）的阻挡高度＆amp; A被夹在第一电极层（12）和第二电极层（13）之间）形成为大于阻挡层（11）和第一电极层（12）之间的界面（17）附近的区域和阻挡层（17）之间的界面（17）的势垒高度B （11）和第二电极层（13）。阻挡层（11）具有例如阻挡层（11a），（11b）和（11c）的三层结构。阻挡层（11a），（11b）和（11c）例如由SiNx2，SiNx1和SiNx1（X1

70. 发明授权

US07656279B2 Glass breakage detecting sensor 失效
标题翻译：玻璃破损检测传感器
公开(公告)号：US07656279B2
公开(公告)日：2010-02-02
申请号：US11882487
申请日：2007-08-02
申请人： Takashi Okada , Katsuyoshi Shirai , Koji Aoki , Hironori Ochiai , Toshiro Maeda
发明人： Takashi Okada , Katsuyoshi Shirai , Koji Aoki , Hironori Ochiai , Toshiro Maeda
IPC分类号： B60R25/10 , G01B7/16
CPC分类号： B60R25/1004
摘要： A glass breakage detecting sensor includes a strain detecting portion by which breakage of a window glass, which is provided at a door of a vehicle, is detected based on changes of an amount of strain, and an attaching portion attached to at least one of an opening and closing mechanism, which freely movably supports the window glass, and an inner panel to which the opening and closing mechanism is arranged within the door, the opening and closing mechanism and the inner panel functioning as an attached portion.
摘要翻译：玻璃破损检测传感器包括：应变检测部，其根据应变量的变化检测设置在车辆门部的窗玻璃的断裂;附接部，其安装在至少一个开闭机构，其可自由移动地支撑窗玻璃;以及内板，开闭机构设置在门内，开闭机构和内板用作安装部。

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