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    • 62. 发明申请
    • Sealed battery and manufacturing method therefor
    • 密封电池及其制造方法
    • US20060019159A1
    • 2006-01-26
    • US11184828
    • 2005-07-20
    • Kazuteru MoriHiroyuki InoueKazuki ShimozonoKazuo Tomimoto
    • Kazuteru MoriHiroyuki InoueKazuki ShimozonoKazuo Tomimoto
    • H01M2/04
    • H01M2/263H01M2/0413H01M2/22
    • The present invention aims to provide a sealed battery having superior performance due to favorable welding of a terminal of a seal cover and a current collector body provided below the seal cover, and a manufacturing method for the sealed battery. In the sealed battery, one of a positive-electrode plate and a negative-electrode plate is electrically connected, via a current collector body, to a terminal of a seal cover which seals an outer can. The current collector body is a single-piece plate member that has a main body and a tab extending from the main body. The tab passes through an insulating ring and bends back such that part of the insulating ring lies between a tip of the tab and the main body of the current collector body. The main body is resistance welded to the electrode assembly, and the bent back tab is resistance welded to the terminal.
    • 本发明的目的在于提供一种由于密封盖的端子和设置在密封盖下方的集电体的良好焊接而具有优异性能的密封电池,以及密封电池的制造方法。 在密封电池中,正极板和负极板之一经由集电体电连接到密封外壳的密封盖的端子。 集电体是具有从主体延伸的主体和突片的单件板状部件。 突片穿过绝缘环并弯曲,使得绝缘环的一部分位于突片的尖端和集电体的主体之间。 主体电阻焊接到电极组件上,弯曲的背片与端子电阻焊接。
    • 64. 发明申请
    • Image forming apparatus
    • 图像形成装置
    • US20050180768A1
    • 2005-08-18
    • US11052760
    • 2005-02-09
    • Hiroyuki Inoue
    • Hiroyuki Inoue
    • G01K7/22G01K13/08G03G15/20
    • G03G15/2039G03G2215/2032
    • An image forming apparatus has a fixing unit that fixes a developer transferred onto a print medium. The apparatus includes a temperature detector and a movement detector. The temperature detector has a thermistor that detects a temperature of or near a fixing member. The movement detector detects that the thermistor has moved relative to the fixing member. The movement detector includes a first, second, and third electrically conductive members. The first electrically conductive member and a second electrically conductive member are connected to each other via the thermistor. The third electrically conductive member cooperates with the first electrically conductive member to form a first switch, and with the second electrically conductive member to form a second switch. When the thermistor moves out of contact engagement with the fixing member, at least one of the first switch and the second switch is closed.
    • 图像形成装置具有固定单元,其固定转印到打印介质上的显影剂。 该装置包括温度检测器和移动检测器。 温度检测器具有检测固定部件的温度或附近的热敏电阻。 移动检测器检测到热敏电阻相对于固定构件移动。 移动检测器包括第一,第二和第三导电构件。 第一导电构件和第二导电构件经由热敏电阻彼此连接。 第三导电构件与第一导电构件协作以形成第一开关,并且与第二导电构件形成第二开关。 当热敏电阻离开与固定部件的接触接合时,第一开关和第二开关中的至少一个闭合。
    • 65. 发明授权
    • Optical reflection sensor
    • 光学反射传感器
    • US06891625B2
    • 2005-05-10
    • US10109568
    • 2002-03-27
    • Kohei TomitaKiyoshi ImaiNaoya NakashitaHiroyuki Inoue
    • Kohei TomitaKiyoshi ImaiNaoya NakashitaHiroyuki Inoue
    • G01B11/00G01C3/06G01J3/50G01S17/02G01V8/12G02B7/32G01B11/24
    • G01V8/12G01B11/026
    • An optical reflection sensor emits light and its reflection from a target object is received. A signal processor carries out a measurement on the received reflected light such as the distance to the target object each time the reflected light is received. Repeatability of measured values is calculated and displayed on a display device incorporated into the housing of the sensor. The display device may have two display areas such that the calculated repeatability and the measured value can be displayed simultaneously. The calculated repeatability may be compared with a specified threshold value, with the result of the comparison displayed. The housing may also incorporate an input device through which a required level of accuracy may be set.
    • 光反射传感器发射光,并且其目标物体的反射被接收。 信号处理器对接收到的反射光进行测量,例如每次接收到反射光时到目标对象的距离。 计算测量值的重复性并将其显示在结合到传感器壳体中的显示装置上。 显示装置可以具有两个显示区域,使得计算出的重复性和测量值可以同时显示。 可以将计算出的重复性与指定的阈值进行比较,并显示比较结果。 壳体还可以包括输入装置,通过该输入装置可以设定所需的精度水平。
    • 66. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US06833293B2
    • 2004-12-21
    • US09008497
    • 1998-01-16
    • Hiroyuki Inoue
    • Hiroyuki Inoue
    • H01L2100
    • H01L29/6659H01L21/763H01L2924/0002Y10S257/90H01L2924/00
    • In a semiconductor device in which a source/drain and a wiring layer are connected to each other through an associated buried conductive layer, a separation width of the buried conductive layer on a upper portion of a gate electrode is made small in order to manufacture a highly reliable and fine MOS transistor. After a silicon oxide film has been formed on a first polycrystalline silicon film so as to be aligned with a width of a gate electrode, a second polycrystalline silicon film formed on the whole surface of a substrate is selectively etched away so as to be left only on both side faces of a pattern of the silicon oxide film. Thereafter, the first polycrystalline silicon film is separated with a width which is smaller than that of the gate electrode by a width of a pattern of the second polycrystalline silicon film. In such a way, the buried conductive layer including the first and second polycrystalline silicon films is formed.
    • 在通过相关的掩埋导电层将源极/漏极和布线层彼此连接的半导体器件中,制造栅极电极上部的掩埋导电层的分离宽度小 高可靠性和精细的MOS晶体管。 在第一多晶硅膜上形成氧化硅膜以与栅电极的宽度对准之后,在衬底的整个表面上形成的第二多晶硅膜被选择性地蚀刻掉以仅留下 在氧化硅膜的图案的两个侧面上。 此后,通过第二多晶硅膜的图案的宽度,以比栅电极小的宽度分开第一多晶硅膜。 以这种方式形成包括第一和第二多晶硅膜的掩埋导电层。