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61. 发明申请

US20090242968A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090242968A1
公开(公告)日：2009-10-01
申请号：US12408183
申请日：2009-03-20
申请人： Takashi MAEDA , Yoshihisa Iwata
发明人： Takashi MAEDA , Yoshihisa Iwata
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L23/528 , H01L23/5226 , H01L27/11551 , H01L27/11556 , H01L27/1157 , H01L27/11578 , H01L27/11582 , H01L2924/0002 , H01L2924/00
摘要： In a nonvolatile semiconductor memory device, a stacked body is formed by alternately stacking dielectric films and conductive films on a silicon substrate and a plurality of through holes extending in the stacking direction are formed in a matrix configuration. A shunt interconnect and a bit interconnect are provided above the stacked body. Conductor pillars are buried inside the through holes arranged in a line immediately below the shunt interconnect out of the plurality of through holes, and semiconductor pillars are buried inside the remaining through holes. The conductive pillars are formed from a metal, or low resistance silicon. Its upper end portion is connected to the shunt interconnect and its lower end portion is connected to a cell source formed in an upper layer portion of the silicon substrate.
摘要翻译：在非易失性半导体存储器件中，通过在硅衬底上交替堆叠电介质膜和导电膜来形成层叠体，并且以矩阵形式形成沿堆叠方向延伸的多个通孔。分路互连和位互连设置在堆叠体的上方。导体支柱埋设在多个通孔中的分流互连的正下方配置的贯通孔的内侧，半导体柱埋设在剩余通孔的内部。导电柱由金属或低电阻硅形成。其上端部连接到分路互连，并且其下端部连接到形成在硅衬底的上层部分中的电池源。

62. 发明授权

US07525837B2 Magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US07525837B2
公开(公告)日：2009-04-28
申请号：US12019657
申请日：2008-01-25
申请人： Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
发明人： Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译：磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。参考层设置在第一表面上并具有固定的磁化方向。磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。第一突出部从第一长边突出的位置从中心向第一短边移动。第二突出部从第二长边突出的位置从中心向第二短边移动。

63. 发明授权

US07511991B2 Spin-injection magnetic random access memory 有权
标题翻译：旋转注入磁性随机存取存储器
公开(公告)号：US07511991B2
公开(公告)日：2009-03-31
申请号：US11750856
申请日：2007-05-18
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译：根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线，辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

64. 发明申请

US20080261331A1 MRAM AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译： MRAM及其制造方法
公开(公告)号：US20080261331A1
公开(公告)日：2008-10-23
申请号：US11935923
申请日：2007-11-06
申请人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
发明人： Yoshihisa Iwata , Yoshiaki Fukuzumi , Tadashi Kai
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension of the first write line, and a first conductive layer for electrical connection to the magneto-resistance effect element, the first conductive layer having sides which are in flush with sides of the magneto-resistance effect element.
摘要翻译：一种磁存储器件，包括：设置在第一写入线和第二写入线之间的交叉点处的磁阻效应元件。并且，所述磁阻效应元件具有沿所述第一写入线的延伸方向延伸的容易轴和用于与所述磁阻效应元件电连接的第一导电层，所述第一导电层具有位于与磁阻效应元件的两侧齐平。

65. 发明授权

US07292468B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07292468B2
公开(公告)日：2007-11-06
申请号：US11194534
申请日：2005-08-02
申请人： Yoshihisa Iwata
发明人： Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic random access memory includes a first magnetoresistive element which is used as a memory element, and a second magnetoresistive element which is used as a current load of a read bias circuit.
摘要翻译：磁性随机存取存储器包括用作存储元件的第一磁阻元件和用作读偏置电路的电流负载的第二磁阻元件。

66. 发明申请

US20060118842A1 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US20060118842A1
公开(公告)日：2006-06-08
申请号：US11037108
申请日：2005-01-19
申请人： Yoshihisa Iwata
发明人： Yoshihisa Iwata
IPC分类号： H01L29/94
CPC分类号： G11C11/16 , B82Y10/00 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory according to an example of the present invention comprises a magnetoresistive element, a write line for use in generation of a magnetic field for data writing with respect to the magnetoresistive element, and a strained layer which is disposed so as to correspond to the magnetoresistive element, and which has a function of being physically deformed at the time of data writing, and of controlling a magnitude of an switching magnetic field of the magnetoresistive element.
摘要翻译：根据本发明的示例的磁性随机存取存储器包括磁阻元件，用于产生相对于磁阻元件的数据写入的磁场的写入线，以及被配置为对应于的应变层并且具有在数据写入时物理变形的功能，并且控制磁阻元件的开关磁场的大小。

67. 发明授权

US07035137B2 Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
标题翻译：具有包含铁磁膜的存储单元的半导体存储器件及其控制方法
公开(公告)号：US07035137B2
公开(公告)日：2006-04-25
申请号：US10807454
申请日：2004-03-24
申请人： Yoshihisa Iwata , Kentaro Nakajima , Masayuki Sagoi , Yuui Shimizu
发明人： Yoshihisa Iwata , Kentaro Nakajima , Masayuki Sagoi , Yuui Shimizu
IPC分类号： G11C11/00 , G11C7/04
CPC分类号： G11C11/15
摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.
摘要翻译：半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。字线沿着第一方向形成。位线沿着第二方向形成。存储单元包括磁阻元件，并且布置在字线和位线的交点处。行解码器选择至少一个字线。列解码器选择至少一个位线。写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。写入电路根据温度变化改变第一和第二写入电流的电流值。

68. 发明授权

US07027325B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US07027325B2
公开(公告)日：2006-04-11
申请号：US10890455
申请日：2004-07-14
申请人： Yoshihisa Iwata
发明人： Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/14 , G11C29/02 , G11C29/021 , G11C29/028 , G11C2029/5004
摘要： A magnetic random access memory according to examples of the present invention comprises a magneto resistive element MTJ, and current source circuits I1, I2 and I3 which give a bias current/voltage to the magneto resistive element MTJ when data in the magneto resistive element MTJ is read, wherein a value of the bias current/voltage changes depending on temperature without depending on a power supply potential.
摘要翻译：根据本发明的示例的磁性随机存取存储器包括磁阻元件MTJ以及电流源电路I 1，I 2和I 3，其在磁阻数据中向磁阻元件MTJ提供偏置电流/电压读取元件MTJ，其中偏置电流/电压的值根据温度而变化，而不依赖于电源电位。

69. 发明申请

US20060056217A1 Magnetic memory device 失效
标题翻译：磁存储器件
公开(公告)号：US20060056217A1
公开(公告)日：2006-03-16
申请号：US11012178
申请日：2004-12-16
申请人： Ryousuke Takizawa , Junichi Miyamoto , Yoshihisa Iwata
发明人： Ryousuke Takizawa , Junichi Miyamoto , Yoshihisa Iwata
IPC分类号： G11C5/06
CPC分类号： G11C11/16 , G11C5/063
摘要： A magnetic memory device includes a memory cell array including MTJ elements provided at the coordinates (x, y). First write lines extend in a direction neither perpendicular nor parallel to the magnetization easy axis direction of the MTJ elements. One and the other end of one first write line pass an upper or lower periphery of the memory cell array and a left or right periphery of the memory cell array, respectively. The first write lines and second write lines sandwich the MTJ elements. First write line drivers are connected to both ends of the first write lines, one and the other end of a pair of the first write line drivers connected to ends of one first write lines are located outside the upper or lower periphery and outside the left or right periphery, respectively. Second write line drivers are connected to both ends of the second write lines.
摘要翻译：磁存储器件包括存储单元阵列，其包括在坐标（x，y）处提供的MTJ元件。第一写入线在既不垂直也不平行于MTJ元件的易磁化轴方向的方向上延伸。一个第一写入线的一端和另一端分别通过存储单元阵列的上周边或下周围以及存储单元阵列的左边缘或右边缘。第一个写入行和第二个写入行夹着MTJ元素。第一写入线驱动器连接到第一写入线的两端，连接到一个第一写入线的端部的一对第一写入线驱动器的一端和另一端位于左上方或下侧外侧，右边缘。第二写线驱动器连接到第二写线的两端。

70. 发明授权

US06961261B2 Magnetic random access memory and data read method thereof 失效
标题翻译：磁性随机存取存储器及其数据读取方法
公开(公告)号：US06961261B2
公开(公告)日：2005-11-01
申请号：US10431369
申请日：2003-05-08
申请人： Yoshihisa Iwata
发明人： Yoshihisa Iwata
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic random access memory having a memory cell array in which one block is formed from a plurality of magnetoresistive elements using a magnetoresistive effect, and a plurality of blocks are arranged in row and column directions, includes a plurality of first magnetoresistive elements arranged in a first block, a plurality of first word lines each of which is independently connected to one terminal of a corresponding one of the first magnetoresistive elements and runs in the row direction, a first read sub bit line commonly connected to the other terminal of each of the first magnetoresistive elements, a first block select switch whose first current path has one end connected to one end of the first read sub bit line, and a first read main bit line which is connected to the other end of the first current path and runs in the column direction.
摘要翻译：一种具有存储单元阵列的磁性随机存取存储器，其中使用磁阻效应从多个磁阻元件形成一个块，并且多个块被排列成行和列方向，包括多个第一磁阻元件，其布置在第一块，多个第一字线，每个第一字线独立地连接到相应的一个第一磁阻元件的一个端子并在行方向上延伸;第一读取子位线，共同连接到每个的另一个端子第一磁阻元件，第一块选择开关，其第一电流路径的一端连接到第一读取子位线的一端，第一读取主位线连接到第一电流路径的另一端并在其中运行列方向。

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