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61. 发明授权

US07470579B2 Method of manufacturing a thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07470579B2
公开(公告)日：2008-12-30
申请号：US11557360
申请日：2006-11-07
申请人： Hyuk Lim , Takashi Noguchi , Jong-man Kim , Kyung-bae Park , Huaxiang Yin
发明人： Hyuk Lim , Takashi Noguchi , Jong-man Kim , Kyung-bae Park , Huaxiang Yin
IPC分类号： H01L21/336
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A thin film transistor having an offset or a lightly doped drain (LDD) structure by self alignment and a method of fabricating the same comprises a substrate, a silicon layer disposed on the substrate and including a channel region, a source region and a drain region at both sides of the channel region, and offset regions, each offset regions disposed between the channel region and one of the source and drain regions at both sides of the channel region, a gate insulating layer covering the channel region and the offset regions disposed at both sides of the channel region excluding the source and drain regions, and a gate layer formed on the channel region excluding the offset regions. The thin film transistor has the structure in which an offset or LDD is obtained without an additional mask process.
摘要翻译：具有通过自对准的偏移或轻掺杂漏极（LDD）结构的薄膜晶体管及其制造方法包括：衬底，设置在衬底上的硅层，并且包括沟道区，源极区和漏极区在通道区域的两侧和偏移区域，每个偏移区域设置在沟道区域和沟道区域两侧的源极和漏极区域之一之间，覆盖沟道区域的栅极绝缘层和设置在沟道区域的偏移区域除了源极和漏极区域之外的沟道区域的两侧，以及形成在除偏移区域之外的沟道区域上的栅极层。薄膜晶体管具有在没有附加掩模处理的情况下获得偏移或LDD的结构。

62. 发明授权

US07390706B2 Method of forming channel region of TFT composed of single crystal Si 有权
标题翻译：形成由单晶硅构成的TFT的沟道区的方法
公开(公告)号：US07390706B2
公开(公告)日：2008-06-24
申请号：US11289312
申请日：2005-11-30
申请人： Hans S. Cho , Takashi Noguchi , Do-young Kim
发明人： Hans S. Cho , Takashi Noguchi , Do-young Kim
IPC分类号： H01L21/84
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02598 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/66772
摘要： A method of forming a high quality channel region of a TFT by forming a large size monocrystalline silicon thin film using a patterned metal mask and a grain boundary filtering region is provided. The method includes sequentially stacking a first buffer layer and an amorphous silicon layer on a substrate, forming a first silicon region in which crystallization begins, a second silicon region having a width smaller than a width of the first silicon region and located on a central portion of a side of the first silicon region, and a third silicon region having a width than greater the width of the second silicon region and contacting the second silicon region, forming a metal mask partly on the first silicon region, and crystallizing the amorphous silicon layer by cooling the amorphous silicon layer after melting the entire amorphous silicon layer except for a portion of the amorphous silicon layer under the metal mask by radiating laser beams to the patterned amorphous silicon layer.
摘要翻译：提供了通过使用图案化金属掩模和晶界过滤区域形成大尺寸单晶硅薄膜来形成TFT的高质量沟道区域的方法。该方法包括在基板上依次层叠第一缓冲层和非晶硅层，形成开始结晶的第一硅区域，第二硅区域的宽度小于第一硅区域的宽度并位于中心部分并且第三硅区域的宽度大于第二硅区域的宽度并与第二硅区域接触，部分地在第一硅区域上形成金属掩模，并且使非晶硅层结晶通过对图案化的非晶硅层照射激光束，在金属掩模下方的非晶硅层的一部分熔融了整个非晶硅层之后，冷却非晶硅层。

63. 发明授权

US07629205B2 Thin film transistor having double-layered gate electrode and method of manufacturing the thin film transistor 有权
标题翻译：具有双层栅电极的薄膜晶体管和制造该薄膜晶体管的方法
公开(公告)号：US07629205B2
公开(公告)日：2009-12-08
申请号：US11330344
申请日：2006-01-12
申请人： Hans S. Cho , Hyuck Lim , Takashi Noguchi , Jang-yeon Kwon
发明人： Hans S. Cho , Hyuck Lim , Takashi Noguchi , Jang-yeon Kwon
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L29/42384 , H01L29/4908 , H01L29/4958 , H01L29/66575 , H01L29/66757 , H01L29/66772
摘要： A thin film transistor (TFT) that can prevent damage to a silicon layer under a gate electrode in an annealing process by using a first gate electrode having high thermal resistance and a second gate electrode having high reflectance and a method of manufacturing the TFT are provided. The method of manufacturing a TFT includes forming a double-layered gate electrode which includes a first gate electrode formed of a material having high thermal resistance and a second gate electrode formed of a metal having high optical reflectance on the first gate electrode, and forming a source and a drain by annealing doped regions on both sides of a silicon layer under the gate electrode by radiating a laser beam onto the entire upper surface of the silicon layer.
摘要翻译：提供一种能够通过使用具有高反射率的第一栅电极和具有高反射率的第二栅电极的退火工艺中的栅电极下的硅层损坏薄膜晶体管（TFT）和制造TFT的方法。 TFT的制造方法包括形成双极栅电极，其包括由具有高热阻的材料形成的第一栅电极和由第一栅电极上的具有高光反射率的金属形成的第二栅极，并形成通过将激光束照射到硅层的整个上表面上，通过在栅极下方的硅层的两侧退火掺杂区域来实现源极和漏极。

64. 发明申请

US20090149007A1 ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电子设备及其制造方法
公开(公告)号：US20090149007A1
公开(公告)日：2009-06-11
申请号：US12370642
申请日：2009-02-13
申请人： Ji-sim JUNG , Takashi Noguchi , Hans S. Cho , Do-young Kim , Kyung-bae Park
发明人： Ji-sim JUNG , Takashi Noguchi , Hans S. Cho , Do-young Kim , Kyung-bae Park
IPC分类号： H01L21/36
CPC分类号： H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78675 , H01L29/78678
摘要： Provided are an electronic device and a method of manufacturing the same. The device includes a plastic substrate, a transparent thermal conductive layer stacked on the plastic substrate, a polysilicon layer stacked on the thermal conductive layer; and a functional device disposed on the polysilicon layer. The functional device is any one of a transistor, a light emitting device, and a memory device. The functional device may be a thin film transistor including a gate stack stacked on the polysilicon layer.
摘要翻译：提供一种电子设备及其制造方法。该装置包括塑料基板，层叠在塑料基板上的透明导热层，堆叠在导热层上的多晶硅层; 以及设置在所述多晶硅层上的功能元件。功能器件是晶体管，发光器件和存储器件中的任何一个。功能器件可以是包括堆叠在多晶硅层上的栅极堆叠的薄膜晶体管。

65. 发明授权

US07439197B2 Method of fabricating a capacitor 失效
标题翻译：制造电容器的方法
公开(公告)号：US07439197B2
公开(公告)日：2008-10-21
申请号：US11267264
申请日：2005-11-07
申请人： Jang-yeon Kwon , Hyuk Lim , Takashi Noguchi , Young-soo Park , Suk-pil Kim , Hans S. Cho , Ji-sim Jung , Kyung-bae Park , Do-young Kim
发明人： Jang-yeon Kwon , Hyuk Lim , Takashi Noguchi , Young-soo Park , Suk-pil Kim , Hans S. Cho , Ji-sim Jung , Kyung-bae Park , Do-young Kim
IPC分类号： H01L21/00 , C30B23/00
CPC分类号： H01L29/66765 , C23C14/3464 , C23C14/46 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02631
摘要： A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.
摘要翻译：公开了一种在衬底上制备半导体膜的方法。该方法包括在沉积室中布置绝缘衬底，并使用离子束沉积将半导体膜沉积到绝缘衬底上，其中沉积期间绝缘衬底的温度不超过250℃。该方法可以产生薄膜晶体管。所公开的离子束沉积方法在较低温度和低杂质下形成具有所需光滑度和晶粒尺寸的膜形态。能够在诸如塑料柔性基底的低熔点基底上沉积半导体膜。

66. 发明授权

US09377478B2 Sample-test-device management server, sample test device, sample test system, and sample test method 有权
标题翻译：样本测试设备管理服务器，样品测试设备，样品测试系统和样品测试方法
公开(公告)号：US09377478B2
公开(公告)日：2016-06-28
申请号：US13322773
申请日：2010-04-28
申请人： Takashi Noguchi , Yoshiyuki Tajima , Koji Kamoshida , Naomi Ishii
发明人： Takashi Noguchi , Yoshiyuki Tajima , Koji Kamoshida , Naomi Ishii
IPC分类号： G06F15/173 , G01N35/02 , G01N35/00
CPC分类号： G01N35/02 , G01N35/00 , G01N35/00732 , G01N35/0092 , G01N35/0095
摘要： There is provided a sample test system which can execute a prior process for a specific sample in consideration of priorities and process progresses of a plurality of samples processed in the sample test system. The sample test system includes a sample-test-device management server 101, when a specific-sample prior process request containing a specific sample ID and a prior-process-request level identification code is accepted from a sample access system 108, which selects a specific-sample prior-process-policy determination table based on the prior-process-request level identification code attached to the specific-sample prior process request, which determines a specific-sample prior process policy based on the specific-sample prior-process-policy determination table and a process state of the sample, which specifies a sample ID regarding the specific sample ID, and which transmits the specific-sample prior process policy to a sample-test-device group 119.
摘要翻译：提供了一种样本测试系统，其可以考虑到在样本测试系统中处理的多个样本的优先级和处理进程，对特定样本执行先前的过程。样本测试系统包括样本测试设备管理服务器101，当从样本访问系统108接收到包含特定样本ID和先前处理请求级别识别码的特定样本先验处理请求时，该样本测试设备管理服务器101选择基于与特定样本先验过程请求相关联的先前过程请求级别标识代码的特定样本先前过程策略确定表，其基于特定样本先前处理过程策略确定特定样本先验过程策略，策略确定表和样本的处理状态，其指定关于特定样本ID的样本ID，并将特定样本先验处理策略发送到样本测试装置组119。

67. 发明授权

US09194876B2 Sample inspection system and operating method for management server thereof 有权
标题翻译：样品检验系统及其管理服务器的操作方法
公开(公告)号：US09194876B2
公开(公告)日：2015-11-24
申请号：US12729787
申请日：2010-03-23
申请人： Tatsuya Tokunga , Naomi Ishii , Takashi Noguchi , Masaki Takano , Yayoi Shitara
发明人： Tatsuya Tokunga , Naomi Ishii , Takashi Noguchi , Masaki Takano , Yayoi Shitara
IPC分类号： G01N1/28 , G01N1/02 , G01P15/16 , G01F3/00 , G01N35/00
CPC分类号： G01N35/0092 , G01N35/0095 , G01N35/02 , G01N2035/00881 , G01N2035/0091 , G01N2035/0094 , G01N2035/0406 , G06F19/00 , G16H10/00 , Y02A90/22 , Y02A90/26
摘要： A management server of a sample inspection system includes sample processing information generated on the basis of inspection request data, facility data, a simulation execution portion and a window generation portion for generating a monitor window. The inspection request data contains a priority, an order time, a required time and inspection items and the sample processing information contains an inspection start time and an inspection estimate finish time. The monitor window has a work area in which the samples represented by sample bars parallel to the abscissa are arranged in a vertical direction and a past record and a future schedule are allocated to this abscissa with the present time as the base. The sample bars display a simulation execution portion for executing simulation on the basis of the inspection start time, the inspection estimate finish time and a delay time. The management server displays the simulation result.
摘要翻译：样本检查系统的管理服务器包括基于检查请求数据生成的样本处理信息，设施数据，模拟执行部分和用于生成监视器窗口的窗口生成部分。检查请求数据包含优先权，订单时间，所需时间和检查项目，并且样本处理信息包含检查开始时间和检查估计完成时间。监视器窗口具有工作区域，其中与横坐标平行的样本条表示的样本在垂直方向上排列，并且将过去记录和未来调度以当前时间作为基准分配给该横坐标。样品条显示用于基于检查开始时间，检查估计完成时间和延迟时间来执行模拟的模拟执行部分。管理服务器显示仿真结果。

68. 发明申请

US20120286668A1 LED LIGHTING SYSTEM, LED LAMP, AND ILLUMINATION SYSTEM FOR LED 有权
标题翻译： LED照明系统，LED灯和LED照明系统
公开(公告)号：US20120286668A1
公开(公告)日：2012-11-15
申请号：US13518894
申请日：2010-12-13
申请人： Kazuyoshi Kondo , Ryosuke Matsui , Terutaka Muramatsu , Takashi Noguchi , Ryo Suzuki
发明人： Kazuyoshi Kondo , Ryosuke Matsui , Terutaka Muramatsu , Takashi Noguchi , Ryo Suzuki
IPC分类号： H05B37/00
CPC分类号： H05B33/089 , F21K9/27 , F21Y2103/10 , F21Y2115/10 , Y02B20/341 , Y02B20/386
摘要： The object of the present invention is to provide a LED illumination system which does not cause heat generation and damage, even when a straight-tube fluorescent lamp is mistakenly fitted into a straight-tube fluorescent lamp luminaire in which the fluorescent lamp ballast has been replaced with a LED lighting device.The LED illumination system according to the present invention is configurated in such a manner that the LED lighting device is installed in an existing straight-tube fluorescent lamp luminaire, and the LED lamp is connected to the existing sockets. The characteristic of the output from the LED lighting device connected to either inter-terminal section A on the ends of the LED lamp is to be different from that of an existing fluorescent lamp lighting device. The LED lamp is provided with lighting device output detection means for detecting the output from the LED lighting device and also with protection means for cutting off the input to the LED lamp when the output detected by the lighting device output detection means is outside of a predetermined range.
摘要翻译：本发明的目的是提供一种即使当直管式荧光灯被错误地装配到已经更换了荧光灯镇流器的直管式荧光灯灯具中时也不引起发热和损坏的LED照明系统配有LED照明装置。根据本发明的LED照明系统被配置为使得LED照明装置安装在现有的直管荧光灯灯具中，并且LED灯连接到现有的插座。连接到LED灯两端的端子间部分A的LED照明装置的输出的特性与现有荧光灯照明装置的输出特性不同。 LED灯具有用于检测来自LED照明装置的输出的照明装置输出检测装置，并且还具有用于当由照明装置输出检测装置检测到的输出超出预定值时切断对LED灯的输入的保护装置范围。

69. 发明申请

US20120075844A1 LED COASTER 审中-公开
公开(公告)号：US20120075844A1
公开(公告)日：2012-03-29
申请号：US13375788
申请日：2010-06-03
申请人： Kazuya Imagi , Takashi Noguchi
发明人： Kazuya Imagi , Takashi Noguchi
IPC分类号： F21L4/00
CPC分类号： A47G23/0309 , F21V33/0036 , F21Y2115/10
摘要： An LED coaster may include: a light transmitting cover, on the upper surface of which an object is placed; a bottom cover attached to the lower surface of the light transmitting cover; a substrate provided between the light transmitting cover and the bottom cover, having an LED mounted on a component surface on the light transmitting cover side and having a switch that turns the LED on and off mounted on a solder surface on the bottom cover side; batteries contained in a battery storage part of the bottom cover to supply electric power to the LED; two rubber pads attached to the bottom surface of the bottom cover; and a switch pad that is attached to the inside of the bottom cover in a vertically moveable manner and on which a switch pressing part facing the switch is arranged. The two rubber pads and the switch pad may be arranged near the outer periphery of the bottom of the bottom cover at approximately equal intervals in a circumferential direction, and the diameter of the switch pad may be set to just under ½ of the diameter of the LED coaster.
摘要翻译： LED过山车可以包括：透光罩，其上表面放置有物体; 底盖附接到透光罩的下表面; 设置在所述透光罩和所述底盖之间的基板，具有安装在所述透光罩侧的部件表面上的LED，并且具有使安装在所述底盖侧的焊料表面上的LED接通和断开的开关; 包含在底盖的电池存储部分中的电池以向LED提供电力; 两个橡胶垫连接到底盖底面; 以及以垂直移动的方式安装在底盖的内部并且布置有面向开关的开关按压部的开关垫。两个橡胶垫和开关垫可以沿圆周方向以大致相等的间隔设置在底盖的底部的外周附近，并且开关垫的直径可以设定在直径的1/2以下 LED过山车。

70. 发明授权

US07768010B2 Poly crystalline silicon semiconductor device and method of fabricating the same 有权
标题翻译：多晶硅半导体器件及其制造方法
公开(公告)号：US07768010B2
公开(公告)日：2010-08-03
申请号：US12216701
申请日：2008-07-09
申请人： Do-young Kim , Takashi Noguchi
发明人： Do-young Kim , Takashi Noguchi
IPC分类号： H01L31/0376 , H01L31/20 , H01L21/00
CPC分类号： H01L27/124 , H01L29/42384
摘要： Provided are a poly crystalline silicon semiconductor device and a method of fabricating the same. Portions of a silicon layer except for gates are removed to reduce a parasitic capacitance caused from the silicon layer existing on gate bus lines. The silicon layer exists under the gates only, thus the parasitic capacitance is reduced and the deterioration and the delay of signals are prevented. Accordingly, the poly crystalline silicon semiconductor device, such as a thin film transistor, has excellent electric characteristics.
摘要翻译：提供一种多晶硅半导体器件及其制造方法。除去栅极以外的硅层的部分被去除以减少由存在于栅极总线上的硅层引起的寄生电容。硅层仅存在于栅极之下，因此寄生电容减小，并且防止信号的劣化和延迟。因此，诸如薄膜晶体管的多晶硅半导体器件具有优异的电特性。

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