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61. 发明授权

US07074548B2 Apparatus and method for forming thin-film 有权
标题翻译：用于形成薄膜的设备和方法
公开(公告)号：US07074548B2
公开(公告)日：2006-07-11
申请号：US10376253
申请日：2003-03-03
申请人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
发明人： Takeshi Kijima , Eiji Natori , Mitsuhiro Suzuki
IPC分类号： B05D3/00 , B05D3/06
CPC分类号： C23C18/1216 , B01J3/008 , B01J19/0013 , B01J19/123 , B01J19/125 , B01J19/1887 , B01J2219/00058 , B05D1/025 , B05D2401/90 , C23C18/12 , C23C18/1283 , C23C18/1287 , C23C18/14 , Y02P20/544
摘要： A method of forming a thin-film including a capability to remove contaminants from the formed thin-film and/or a substrate on which the thin-film is formed using alcohol. The method includes allowing a substrate holder to support a substract. A first mixture is produced by mixing a condensation polymer containing an element of metal oxide compound and alcohol. Then second mixture is produced by mixing supercritical fluid or liquid carbon dioxide and the first mixture. A thin film is formed by applying the second mixture on a surface of the substrate. After forming the thin-film, the substrate is cleaned by applying alcohol to upper and lower surfaces, preferably the whole upper and lower surfaces, of the substract. The thin-film is crystallized by heating, and the crystallizing may include applying oxygen in a crystallizing chamber. Soft X-rays may be applied to the substrate, during the forming of the thin-film on the surface of the substrate.
摘要翻译：一种形成薄膜的方法，该薄膜包括从形成的薄膜和/或使用酒精形成薄膜的基板去除污染物的能力。该方法包括允许衬底保持器支撑减法。通过混合含有金属氧化物和醇的元素的缩聚物来制备第一混合物。然后通过混合超临界流体或液体二氧化碳和第一混合物产生第二混合物。通过将第二混合物施加到基板的表面上来形成薄膜。在形成薄膜之后，通过将酒精施加到底部的上表面和下表面，优选整个上表面和下表面来清洁基底。薄膜通过加热结晶，结晶可以包括在结晶室中施加氧气。在衬底表面形成薄膜期间，可以将软X射线施加到衬底上。

62. 发明申请

US20060081902A1 Ferroelectric memory and method of manufacturing the same 审中-公开
标题翻译：铁电记忆及其制造方法
公开(公告)号：US20060081902A1
公开(公告)日：2006-04-20
申请号：US11252316
申请日：2005-10-17
申请人： Akihito Matsumoto , Toshiyuki Kamiya , Kenji Yamada , Eiji Natori , Tomoo Kinoshita
发明人： Akihito Matsumoto , Toshiyuki Kamiya , Kenji Yamada , Eiji Natori , Tomoo Kinoshita
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A method of manufacturing a ferroelectric memory includes: (a) stacking a lower electrode layer, a ferroelectric layer, and an upper electrode layer on a base in that order to form a ferroelectric laminate; (b) patterning the ferroelectric laminate to form a ferroelectric capacitor; (c) forming a first barrier film which covers the ferroelectric capacitor by physical vapor deposition (PVD); and (d) forming a second barrier film which covers the first barrier film by chemical vapor deposition (CVD).
摘要翻译：制造铁电存储器的方法包括：（a）依次堆叠下电极层，铁电体层和上电极层，形成铁电层叠体; （b）图案化铁电层压板以形成铁电电容器; （c）通过物理气相沉积（PVD）形成覆盖铁电电容器的第一阻挡膜; 和（d）通过化学气相沉积（CVD）形成覆盖第一阻挡膜的第二阻挡膜。

63. 发明授权

US07031180B2 Method of reading data in ferroelectric memory device and ferroelectric memory device 失效
标题翻译：在铁电存储器件和铁电存储器件中读取数据的方法
公开(公告)号：US07031180B2
公开(公告)日：2006-04-18
申请号：US10807355
申请日：2004-03-24
申请人： Junichi Karasawa , Takeshi Kijima , Eiji Natori
发明人： Junichi Karasawa , Takeshi Kijima , Eiji Natori
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A method of reading data in a ferroelectric memory device includes applying a read voltage to a ferroelectric capacitor, and detecting a voltage that reflects an amount of a dynamic change in capacitance of the ferroelectric capacitor to which the read voltage is applied. Since a voltage difference ΔV occurs at a time T between the case where the polarization of a memory cell which has stored first data is not reversed and the case where the polarization of a memory cell which has stored second data is reversed, a read margin increases.
摘要翻译：一种在铁电存储器件中读取数据的方法包括：向铁电电容器施加读取电压，并且检测反映施加了读取电压的铁电电容器的电容的动态变化量的电压。由于在存储了第一数据的存储单元的极化不反转的情况下，在存储第二数据的存储单元的极化反转的情况下，在时刻T发生电压差DeltaV，读取余量增加。

64. 发明授权

US07018676B2 Method and device for manufacturing ceramics, semiconductor device and piezoelectric device 有权
公开(公告)号：US07018676B2
公开(公告)日：2006-03-28
申请号：US09819688
申请日：2001-03-29
申请人： Eiji Natori
发明人： Eiji Natori
IPC分类号： C23C16/00 , H01L21/00 , H01L21/44
CPC分类号： C23C16/45512 , C23C16/409 , C23C16/452
摘要： A method for manufacturing ceramics includes a step of forming a ceramic film on a substrate by mixing a fine particle of a raw material species which becomes at least part of raw materials for ceramics with an active species, and feeding the mixed fine particle and active species to the substrate. A manufacture device includes a disposing section which also serves as a heating section for a substrate, a raw material species feeding section for feeding a fine particle of a raw material species, an active species feeding section for feeding an active species, and a mixing section for mixing the raw material species and the active species.

65. 发明申请

US20050078507A1 Ferroelectric memory device, method of driving the same, and driver circuit 失效
标题翻译：铁电存储器件，其驱动方法和驱动电路
公开(公告)号：US20050078507A1
公开(公告)日：2005-04-14
申请号：US10932890
申请日：2004-09-02
申请人： Yasuaki Hamada , Takeshi Kijima , Eiji Natori
发明人： Yasuaki Hamada , Takeshi Kijima , Eiji Natori
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.
摘要翻译：一种铁电存储器件，其防止压印并包括多个字线，多个位线，多个铁电存储器单元，驱动字线的字线驱动器和驱动位线的位线驱动器。字线驱动器和位线驱动器通过将具有第一极性的电压Vs施加到第一模式，将铁电存储器件的操作模式切换到作为数据读取模式，数据重写模式和数据写入模式之一的第一模式选自铁电存储单元的至少一个铁电存储单元。字线驱动器和位线驱动器将操作模式切换到第二模式，其中铁电存储器件通过将与第一极性相反的具有第二极性的电压（-Vs / 3）施加到所选铁电体来防止压印存储单元，在操作模式已经被切换到第一模式至少一次之后，第二极性的电压不会导致存储在铁电存储单元中的数据的反转。

66. 发明申请

US20050013161A1 Ferroelectric memory and method of manufacturing the same 审中-公开
标题翻译：铁电记忆及其制造方法
公开(公告)号：US20050013161A1
公开(公告)日：2005-01-20
申请号：US10771353
申请日：2004-02-05
申请人： Akihito Matsumoto , Eiji Natori , Tatsuya Shimoda
发明人： Akihito Matsumoto , Eiji Natori , Tatsuya Shimoda
IPC分类号： H01L27/00 , G11C11/14 , G11C11/22 , H01L21/8239 , H01L21/8246 , H01L27/02 , H01L27/10 , H01L27/105 , H01L29/786
CPC分类号： G11C11/22
摘要： A ferroelectric memory of the present invention includes a sheet-shaped device including a memory cell array which includes a ferroelectric capacitor, and a circuit section which is formed on the memory cell array and includes a thin-film transistor.
摘要翻译：本发明的铁电体存储器包括：包括具有铁电电容器的存储单元阵列的片状器件和形成在存储单元阵列上并包括薄膜晶体管的电路部分。

67. 发明授权

US06737690B2 Ferroelectronic memory and electronic apparatus 失效
标题翻译：铁电记忆体和电子仪器
公开(公告)号：US06737690B2
公开(公告)日：2004-05-18
申请号：US10105042
申请日：2002-03-22
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Kazumasa Hasegawa , Eiji Natori
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Kazumasa Hasegawa , Eiji Natori
IPC分类号： H01C31119
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/31604 , H01L27/105 , H01L27/11507 , H01L27/11509 , H01L28/55 , H01L28/60 , Y10S257/906
摘要： The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has an excellent degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved. A ferroelectric memory having both integration and memory characteristics in which the angularity of the ferroelectric layer's hysteresis curve is improved is realized as follows. Namely, a structure is employed in which the memory cell array and the peripheral circuit are in a plane separated from one another, and the ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer and the first signal electrodes.
摘要翻译：本发明涉及具有优异的集成度的矩阵型存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度。如下实现具有集成和存储特性的强电介质存储器，其中铁电层的磁滞曲线的角度得到改善。也就是说，采用其中存储单元阵列和外围电路处于彼此分离的平面中的结构，并且使铁电层经由缓冲器和第一信号电极经历外延生长到Si单晶。

68. 发明授权

US06717837B2 Ferroelectric memory device and method of operating memory cell including ferroelectric capacitor 有权
标题翻译：铁电存储器件和操作存储单元的方法，包括铁电电容器
公开(公告)号：US06717837B2
公开(公告)日：2004-04-06
申请号：US10026903
申请日：2001-12-27
申请人： Kazumasa Hasegawa , Eiji Natori
发明人： Kazumasa Hasegawa , Eiji Natori
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/101 , H01L27/11507 , H01L28/55
摘要： A ferroelectric memory device includes memory cells including ferroelectric capacitors formed in regions in which first signal electrodes intersect second signal electrodes. Information is written into a selected memory cell by applying a write voltage between one of the first signal electrodes and one of the second signal electrodes in the memory cell. Information is read from the selected memory cell by applying a read voltage between one of the first signal electrodes and one of the second signal electrodes in the memory cell. Provided that the write voltage is ±Vs and the read voltage is either +Vs or −Vs, |Vs| is less than the absolute value of a saturation voltage at which remanent polarization of the ferroelectric capacitors is saturated.
摘要翻译：铁电存储器件包括形成在第一信号电极与第二信号电极相交的区域中形成的铁电电容器的存储单元。通过在第一信号电极之一和存储单元中的第二信号电极中的一个之间施加写入电压，将信息写入选择的存储单元。通过在第一信号电极之一和存储单元中的第二信号电极中的一个之间施加读取电压，从所选存储单元读取信息。假设写入电压为±Vs，读取电压为+ Vs或-Vs，| Vs | 小于强电介质电容器的剩余极化饱和的饱和电压的绝对值。

69. 发明授权

US06690598B2 Ferroelectric memory device and method of manufacturing the same 有权
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US06690598B2
公开(公告)日：2004-02-10
申请号：US09895205
申请日：2001-07-02
申请人： Koichi Oguchi , Eiji Natori , Kazumasa Hasegawa
发明人： Koichi Oguchi , Eiji Natori , Kazumasa Hasegawa
IPC分类号： G11C1122
CPC分类号： G11C11/22 , H01L2924/15153
摘要： A ferroelectric memory device includes a memory cell array and a peripheral circuit section. The memory cell array, in which memory cells are arranged in a matrix, includes first signal electrodes, second signal electrodes which are arranged in a direction so as to intersect the first signal electrodes, and a ferroelectric layer disposed at least at intersection regions between the first signal electrodes and the second signal electrodes. The peripheral circuit section includes circuits for selectively allowing information to be written into or read from the memory cells, such as a first driver circuit, a second driver circuit, and a signal detection circuit. The memory cell array and the peripheral circuit section are disposed in different layers so as to be layered. This ferroelectric memory device can significantly increase the degree of integration of the memory cells and decrease the chip area.
摘要翻译：铁电存储器件包括存储单元阵列和外围电路部分。其中存储单元以矩阵形式布置的存储单元阵列包括第一信号电极，沿与第一信号电极相交的方向布置的第二信号电极，以及至少设置在第一信号电极之间的交叉区域处的铁电层第一信号电极和第二信号电极。外围电路部分包括用于选择性地允许将信息写入或从诸如第一驱动电路，第二驱动电路和信号检测电路的存储单元读取的电路。存储单元阵列和外围电路部分分层设置在不同的层中。该铁电存储器件可以显着增加存储单元的集成度并减小芯片面积。

70. 发明授权

US5804835A Method of operating a high temperature superconductive device comprising superconductive source, drain, and channel regions 失效
标题翻译：操作包括超导源极，漏极和沟道区的高温超导器件的方法
公开(公告)号：US5804835A
公开(公告)日：1998-09-08
申请号：US463322
申请日：1995-06-05
申请人： Taketomi Kamikawa , Eiji Natori , Setsuya Iwashita , Tatsuya Shimoda
发明人： Taketomi Kamikawa , Eiji Natori , Setsuya Iwashita , Tatsuya Shimoda
IPC分类号： H01L39/14 , H01L39/16 , H01L39/22 , H01L29/12
CPC分类号： H01L39/146 , H01L39/16
摘要： This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive electrodes, wherein there are 2-terminal or 3-terminal superconductive devices that use a junction that is in a superconductive state that is weaker than the first and the second superconductive electrodes or in a normal conductive state that is near the superconductive state. The differences between the critical current, the critical temperature, the pair potential and the carrier densities of the first and the second superconductive electrodes and the junction are used as a means of putting the junction in the states mentioned above. Based on the methods mentioned above, a superconductive device which has few pattern rule restrictions and which is easy to fabricate can be offered. And in the case of the 3-terminal superconductive device, the switching characteristics can be improved.
摘要翻译：这是一种超导装置的发明，该超导装置配备有第一超导电极，第二超导电极和由连接这些超导电极的超导材料制成的结，其中存在2端或3端超导装置，其中使用处于比第一和第二超导电极弱的超导状态的接合处或接近超导状态的正常导电状态。使用第一和第二超导电极和结的临界电流，临界温度，对电势和载流子密度之间的差异作为将结点置于上述状态的手段。基于上述方法，可以提供具有很少图案规则限制并且易于制造的超导装置。并且在3端子超导装置的情况下，可以提高开关特性。

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