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61. 发明授权

US5323484A Heating apparatus with multilayer insulating structure 失效
标题翻译：具有多层绝缘结构的加热装置
公开(公告)号：US5323484A
公开(公告)日：1994-06-21
申请号：US12151
申请日：1993-01-28
申请人： Ken Nakao , Seiji Sakurai , Yoshihisa Miyahara , Yoshiyuki Motoyoshi
发明人： Ken Nakao , Seiji Sakurai , Yoshihisa Miyahara , Yoshiyuki Motoyoshi
IPC分类号： F27D11/02 , C30B25/10 , C30B31/12 , F27B5/04 , F27D1/00 , H01L21/22 , H05B3/14 , H05B3/64
CPC分类号： C30B25/10 , C30B31/12 , F27B5/04 , H05B3/148 , H05B3/64
摘要： A heating apparatus including a process tube in which the target objects are arranged in an internal heating area and a multilayer insulating structure arranged so to enclose the process tube. At the inner face of an inorganic molded structure of bulk density 0.3-0.8 g/cm.sup.3, an inorganic insulating layer of bulk density 1.0-2.0 g/cm.sup.3 covered on the inner face or all faces thereof by inorganic cloth is provided to form the multilayer insulating structure. The inner face of the inorganic insulating layer is used to support a heat generating means. A cooling means is also provided for cooling the flat heating area of the process tube. As a result, a heating apparatus of the present invention is provided that features excellent endurance against spalling, deterioration and chemical reaction, and which is capable of long term stability with respect to temperature increase and decrease.
摘要翻译：一种加热装置，包括其中目标物体布置在内部加热区域中的处理管和布置成包围处理管的多层绝缘结构。在堆积密度为0.3-0.8g / cm 3的无机模制结构的内表面上，提供用无机布覆盖在其内表面或其所有面上的堆积密度为1.0-2.0g / cm3的无机绝缘层，以形成多层绝缘结构。无机绝缘层的内表面用于支撑发热装置。还提供冷却装置以冷却处理管的平坦加热区域。结果，提供了本发明的加热装置，其具有优异的抗剥落，劣化和化学反应的耐久性，并且能够在温度升高和降低方面具有长期的稳定性。

62. 发明授权

US5239614A Substrate heating method utilizing heating element control to achieve horizontal temperature gradient 失效
标题翻译：基板加热方式利用加热元件控制实现水平温度梯度
公开(公告)号：US5239614A
公开(公告)日：1993-08-24
申请号：US791545
申请日：1991-11-14
申请人： Seiko Ueno , Ken Nakao , Kikuo Yamabe , Keitaro Imai
发明人： Seiko Ueno , Ken Nakao , Kikuo Yamabe , Keitaro Imai
IPC分类号： H01L21/22 , H01L21/00 , H01L21/205 , H01L21/31
CPC分类号： H01L21/67115
摘要： A heat-treating method comprising preparing a plurality of wafers parallel to one another in a process tube while keeping their surfaces to be treated substantially horizontal, arranging plural MoSi.sub.2 wire heaters along the longitudinal axis of the process tube so as to be placed around the process tube, adjusting the amount of current supplied to the heaters to form on the treated surface of each of the wafers temperature gradient extending from one side of the outer circumferential rim of each of the wafers to the other side thereof, and rotating the wafers in their surfaces.
摘要翻译：一种热处理方法，包括在处理管中彼此平行地制备多个晶片，同时保持其待处理的表面基本上水平，沿着处理管的纵向轴线布置多个MoSi2线加热器，以便围绕该工艺调节供应到加热器的电流量，以在每个晶片的每个晶片的处理表面上形成从每个晶片的外周边缘的一侧延伸到另一侧的温度梯度，并且将晶片在它们的表面。

63. 发明授权

US5229576A Heating apparatus 失效
标题翻译：加热装置
公开(公告)号：US5229576A
公开(公告)日：1993-07-20
申请号：US842984
申请日：1992-02-28
申请人： Ken Nakao , Seiji Sakurai , Yoshihisa Miyahara , Yoshiyuki Motoyoshi
发明人： Ken Nakao , Seiji Sakurai , Yoshihisa Miyahara , Yoshiyuki Motoyoshi
IPC分类号： F27D11/02 , C23C16/46 , H01L21/205 , H01L21/22 , H05B3/64 , H05B3/66
CPC分类号： C23C16/46 , H05B3/64
摘要： A heating apparatus provided with a double layered heat-insulating material. This heat-insulating material includes an inner layer portion constituted by an alumina fiber/inorganic filler/inorganic binder and having a bulk density of 0.3 to 0.8 g/cm.sup.3, and an outer layer portion integrally laminated on the inner layer portion, and constituted by an alumina silica fiber/ inorganic binder and having a bulk density of 0.2 to 0.4 g/cm.sup.3 which is smaller than that of the inner layer portion.
摘要翻译：一种具有双层隔热材料的加热装置。该绝热材料包括由氧化铝纤维/无机填料/无机粘合剂构成的体积密度为0.3〜0.8g / cm 3的内层部分和整体层叠在内层部上的外层部，由氧化铝二氧化硅纤维/无机粘合剂，并且其体积密度小于内层部分的体积密度为0.2至0.4g / cm 3。

64. 外观设计

USD326272S Heat insulating cylinder for thermal treatment of semiconductor wafers 失效
公开(公告)号：USD326272S
公开(公告)日：1992-05-19
申请号：US301995
申请日：1989-01-25
申请人： Ken Nakao , Wataru Ohkase
设计人： Ken Nakao , Wataru Ohkase

65. 发明授权

US5097890A Heat treating apparatus with cooling fluid nozzles 失效
标题翻译：具有冷却流体喷嘴的热处理装置
公开(公告)号：US5097890A
公开(公告)日：1992-03-24
申请号：US624473
申请日：1990-12-10
申请人： Ken Nakao
发明人： Ken Nakao
IPC分类号： H01L21/22 , C30B25/10 , C30B31/12 , F27B17/00 , F27D9/00 , H01L21/00 , H01L21/205 , H01L21/31 , H05B3/64
CPC分类号： H01L21/67109 , C30B25/10 , C30B31/12 , F27B17/0016 , F27D9/00 , H05B3/64
摘要： A cooling system is disclosed which is incorporated in a heat treating apparatus for use in a manufacturing process of a semiconductor device etc. The heat treating apparatus includes a reaction tube for receiving products to be heat treated in its uniformly heated zone, and a heater which surrounds the reaction tube. Inlet means for blowing a cooling fluid and exhaust means for collecting that cooling fluid which is heated after the cooling function thereof has been achieved are provided. The fluid is blown from the inlet means around the reaction tube, substantially perpendicular to the axis of the reduction tube, and as a result, a flow of cooling fluid from the inlet means toward the exhaust means is established beyond the length of the uniformly heated zone, thus the entire reaction zone within the reaction tube is uniformly cooled.
摘要翻译：公开了一种冷却系统，其结合在用于半导体装置等的制造过程的热处理装置中。热处理装置包括用于在其均匀加热区域中接收待热处理的产品的反应管和加热器围绕反应管。提供用于吹送冷却流体的进气装置和用于收集在其冷却功能之后被加热的冷却流体的排气装置。流体从反应管周围的入口装置吹出，基本上垂直于还原管的轴线，结果，冷却流体从入口装置朝向排气装置的流动被建立超过均匀加热的长度使反应管内的整个反应区均匀地冷却。

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