专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US07940492B2 Hydrodynamic bearing device, spindle motor, and recording and reproducing apparatus 有权
标题翻译：流体动力轴承装置，主轴电机以及记录和再现装置
公开(公告)号：US07940492B2
公开(公告)日：2011-05-10
申请号：US11940036
申请日：2007-11-14
申请人： Koji Hirata , Hiroaki Saito , Takao Yoshitsugu , Hiroyuki Kiriyama
发明人： Koji Hirata , Hiroaki Saito , Takao Yoshitsugu , Hiroyuki Kiriyama
IPC分类号： G11B17/02
CPC分类号： F16C17/107 , F16C33/107 , F16C33/74 , F16C2370/12 , G11B21/16
摘要： In order to prevent oil leakage in a hydrodynamic bearing device comprising an opening section in close proximity to a radial bearing and a lubricating fluid reservoir, a shaft 10, thrust flange 16, sleeve 11, seal plate 21, and stopper plate 20 are provided, a radial dynamic pressure bearing is formed in a radial clearance between the shaft 10 and sleeve 11, and a thrust dynamic pressure bearing is formed in a thrust direction clearance between the sleeve 11 and thrust flange 16. A connecting hole 11d is formed that connects a gap between the sleeve 11 and seal plate 21 and a thrust direction gap between the sleeve 11 and thrust flange 16. The relationship A
摘要翻译：为了防止在包括靠近径向轴承和润滑流体储存器的开口部分的流体动力轴承装置中的油泄漏，提供轴10，推力凸缘16，套筒11，密封板21和止动板20，径向动压轴承形成在轴10和套筒11之间的径向间隙中，并且推力动压轴承形成在套筒11和推力凸缘16之间的推力方向间隙。形成连接孔11d 套筒11和密封板21之间的间隙以及套筒11和推力凸缘16之间的推力方向间隙。满足关系A

62. 发明授权

US07473034B2 Hydrodynamic bearing device, motor, and disk driving apparatus 失效
标题翻译：流体动力轴承装置，电动机和盘驱动装置
公开(公告)号：US07473034B2
公开(公告)日：2009-01-06
申请号：US11443175
申请日：2006-05-31
申请人： Hiroaki Saito , Hiroyuki Kiriyama , Takao Yoshitsugu , Koji Hirata
发明人： Hiroaki Saito , Hiroyuki Kiriyama , Takao Yoshitsugu , Koji Hirata
IPC分类号： F16C32/06
CPC分类号： F16C17/102 , F16C17/107 , F16C33/107 , H02K7/086
摘要： A hydrodynamic bearing device with high reliability, with which reductions in size, weight, and thickness can be achieved, as well as a motor and a disk driving apparatus that make use of this hydrodynamic bearing device. The hydrodynamic bearing device comprises a shaft, a thrust flange, a sleeve, a seal plate, and a retaining plate. A radial dynamic pressure bearing is formed in the radial direction gap between the shaft and the sleeve, and a thrust dynamic pressure bearing is formed in the thrust dynamic bearing gap between the sleeve and the thrust flange. A communicating hole is formed for communicating between the gap between the sleeve and the seal plate and the thrust direction gap between the sleeve and the thrust flange. The radial dynamic pressure bearing and/or the thrust dynamic pressure bearing are formed such that a lubricating oil circulates in the gap between the sleeve and the seal plate from the inner peripheral side of the sleeve toward the outer peripheral side.
摘要翻译：可以实现具有高可靠性的流体动力轴承装置，其可以实现尺寸，重量和厚度的减小，以及利用该流体动力轴承装置的电动机和盘驱动装置。流体动力轴承装置包括轴，推力凸缘，套筒，密封板和保持板。径向动压轴承形成在轴与套筒之间的径向间隙中，推力动压轴承形成在套筒与推力凸缘之间的推力动态轴承间隙中。形成连通孔，用于在套筒和密封板之间的间隙以及套筒和推力凸缘之间的推力方向间隙连通。径向动压轴承和/或推力动压轴承形成为使得润滑油在套筒和密封板之间的间隙中从套筒的内周侧向外周侧循环。

63. 发明申请

US20050266642A1 Semiconductor device and a method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050266642A1
公开(公告)日：2005-12-01
申请号：US11194446
申请日：2005-08-02
申请人： Hirotoshi Kubo , Masanao Kitagawa , Masahito Onda , Hiroaki Saito , Eiichiroh Kuwako
发明人： Hirotoshi Kubo , Masanao Kitagawa , Masahito Onda , Hiroaki Saito , Eiichiroh Kuwako
IPC分类号： H01L21/336 , H01L29/10 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/1095 , H01L29/41766 , H01L29/4236 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A power MOSFET comprises: a semiconductor substrate 21 of a first conduction type; a drain layer 22 of the first conduction type and formed on a surface layer of the substrate; a gate insulating film 25 formed in a partial region on the drain layer 22; a gate electrode 26 formed on the gate insulating film 25; an insulating film 27 formed on the gate electrode; a side wall insulator 28 formed on side walls of the gate insulating film 25, the gate electrode 26, and the insulating film 27; a recess formed on the drain layer 22 and in a region other than a region where the gate electrode 25 and the side wall insulator 28 are formed; a channel layer 23 of a second conduction type opposite to the first conduction type and formed in a range from the region where the recess is formed to a vicinity of the region where the gate electrode 26 is formed; a source region layer 24 of the one conduction type and formed on the channel layer 23 outside the recess; and a wiring layer 29 formed to cover the channel layer 23 which is exposed through the recess, the side wall insulator 28, and the insulating film.
摘要翻译：功率MOSFET包括：第一导电类型的半导体衬底21; 第一导电类型的漏极层22，并形成在衬底的表面层上; 形成在漏极层22上的部分区域中的栅极绝缘膜25; 形成在栅极绝缘膜25上的栅电极26; 形成在栅电极上的绝缘膜27; 形成在栅极绝缘膜25，栅电极26和绝缘膜27的侧壁上的侧壁绝缘体28; 在漏极层22上形成的凹部和形成有栅电极25和侧壁绝缘体28的区域以外的区域; 与第一导电型相反的第二导电类型的沟道层23形成在从形成凹部的区域到形成栅电极26的区域附近的范围内; 一个导电类型的源极区24，并形成在凹槽外部的沟道层23上; 以及形成为覆盖通过凹部暴露的沟道层23，侧壁绝缘体28和绝缘膜的布线层29。

64. 发明申请

US20050184406A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050184406A1
公开(公告)日：2005-08-25
申请号：US11061730
申请日：2005-02-22
申请人： Tetsuya Okada , Hiroaki Saito
发明人： Tetsuya Okada , Hiroaki Saito
IPC分类号： H01L29/872 , H01L29/47 , H01L29/861 , H01L31/062
CPC分类号： H01L29/872 , H01L29/861
摘要： Conventionally, VF and IR characteristics of a Schottky barrier diode are in a tradeoff relation and there is a problem in that an increase in a leak current is unavoidable in order to realize a reduction in VF. To solve the problem, p type semiconductor regions of a pillar shape reaching an n+ type semiconductor substrate are provided in an n− type semiconductor layer. When a reverse voltage is applied, a depletion layer expanding in a substrate horizontal direction from the p type semiconductor regions fills the n− type semiconductor layer. Thus, it is possible to prevent the leak current generated on a Schottky junction interface from leaking to a cathode side. Since an impurity concentration of the n− type semiconductor layer can be increased to a degree at which the depletion layer expanding from the p type semiconductor regions adjacent to each other can be pinched off, it is possible to realize a reduction in VF and it is possible to secure a predetermined breakdown voltage if only the depletion layer is pinched off.
摘要翻译：通常，肖特基势垒二极管的VF和IR特性是权衡关系的，并且存在为了实现VF的降低而不可避免地增加泄漏电流的问题。为了解决这个问题，在n型半导体层中设置了到n +型半导体衬底的柱状的p型半导体区域。当施加反向电压时，从p型半导体区域沿衬底水平方向膨胀的耗尽层填充n型半导体层。因此，可以防止在肖特基结界面上产生的泄漏电流泄漏到阴极侧。由于可以将n型半导体层的杂质浓度提高到从相邻的p型半导体区域扩大的耗尽层被夹除的程度，所以可以实现VF的降低，如果只有耗尽层被夹掉，则可以确保预定的击穿电压。

65. 发明申请

US20050167748A1 Insulated gate-type semiconductor device and manufacturing method of the same 有权
标题翻译：绝缘栅型半导体器件及其制造方法
公开(公告)号：US20050167748A1
公开(公告)日：2005-08-04
申请号：US11023961
申请日：2004-12-29
申请人： Masahito Onda , Hirotoshi Kubo , Shouji Miyahara , Hiroyasu Ishida , Hiroaki Saito
发明人： Masahito Onda , Hirotoshi Kubo , Shouji Miyahara , Hiroyasu Ishida , Hiroaki Saito
IPC分类号： H01L29/417 , H01L21/265 , H01L21/336 , H01L29/08 , H01L29/41 , H01L29/423 , H01L29/49 , H01L29/72 , H01L29/739 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0869 , H01L29/4236 , H01L29/66727 , H01L29/66734
摘要： An interlayer dielectric film is completely buried in a trench, and failures caused by step coverage is prevented because a source electrode can be formed substantially uniformly on an upper portion of a gate electrode. Also, in the processes of forming a source region, a body region and an interlayer dielectric film, only one mask is necessary so that the device size is reduced to account for placement error of only one mask alignment.
摘要翻译：层间电介质膜被完全埋入沟槽中，由于可以在栅电极的上部基本上均匀地形成源电极，所以防止由台阶覆盖引起的故障。此外，在形成源极区域，体区域和层间电介质膜的过程中，仅需要一个掩模，使得器件尺寸减小以仅考虑一个掩模对准的放置误差。

66. 发明授权

US06395604B1 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06395604B1
公开(公告)日：2002-05-28
申请号：US09652013
申请日：2000-08-31
申请人： Hirotoshi Kubo , Hiroaki Saito , Masanao Kitagawa , Eiichiroh Kuwako
发明人： Hirotoshi Kubo , Hiroaki Saito , Masanao Kitagawa , Eiichiroh Kuwako
IPC分类号： H01L21336
CPC分类号： H01L29/7813 , H01L29/4232 , H01L29/4238
摘要： The present invention improves the characteristic of a trench-type vertical MOSFET. When a trench 23 serving as a gate 25 is formed, it is made in a shape of “&ggr;” which is convex toward the inside of the trench. Thus, the surface area of the trench is reduced so that both gate-source capacitance and gate-drain capacitance can be reduced, thereby shortening the switching time of the MOSFET.
摘要翻译：本发明改进了沟槽型垂直MOSFET的特性。当形成用作栅极25的沟槽23时，其形成为朝向沟槽内部凸出的“γ”形状。因此，沟槽的表面积减小，从而可以减小栅极 - 源极电容和栅极 - 漏极电容，从而缩短MOSFET的开关时间。

67. 发明授权

US6137135A Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US6137135A
公开(公告)日：2000-10-24
申请号：US131345
申请日：1998-08-07
申请人： Hirotoshi Kubo , Hiroaki Saito , Masanao Kitagawa , Eiichiroh Kuwako
发明人： Hirotoshi Kubo , Hiroaki Saito , Masanao Kitagawa , Eiichiroh Kuwako
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/423 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/113 , H01L31/119 , H01L31/062
CPC分类号： H01L29/7813 , H01L29/4232 , H01L29/4238
摘要： The present invention improves the characteristic of a trench-type vertical MOSFET. When a trench 23 serving as a gate 25 is formed, it is made in a shape of ".gamma." which is convex toward the inside of the trench. Thus, the surface area of the trench is reduced so that both gate-source capacitance and gate-drain capacitance can be reduced, thereby shortening the switching time of the MOSFET.
摘要翻译：本发明改进了沟槽型垂直MOSFET的特性。当形成用作栅极25的沟槽23时，其形成为朝向沟槽内部凸出的“γ”形状。因此，沟槽的表面积减小，从而可以减小栅极 - 源极电容和栅极 - 漏极电容，从而缩短MOSFET的开关时间。

68. 发明授权

US4812138A Connector terminal 失效
标题翻译：连接器端子
公开(公告)号：US4812138A
公开(公告)日：1989-03-14
申请号：US137199
申请日：1987-12-23
申请人： Hiroki Kondo , Hiroaki Saito , Makoto Katsumata , Michitaka Kinoshita
发明人： Hiroki Kondo , Hiroaki Saito , Makoto Katsumata , Michitaka Kinoshita
IPC分类号： H01R4/18
CPC分类号： H01R4/185
摘要： A connector terminal is disclosed which comprises a base plate having an electrical contact portion at one side and an electrical wire connecting portion at the other side, and a pair of wire barrel members extending upwardly from both edges of the base plate so that a conductor of an electrical wire is crimped by the pair of wire barrel members. A CH CW ratio in the electrical wire pressure contact portion is in the range of 31 to 35%, the CH CW ratio being defined by the following equation: ##EQU1## where CH is the crimp height and CW is the crimp width.
摘要翻译：公开了一种连接器端子，其包括在一侧具有电接触部分的基板和在另一侧上的电线连接部分，以及从基板的两个边缘向上延伸的一对线筒部件，电线由一对线筒构件压接。电线压力接触部分的CH CW比在31〜35％的范围内，CH CW比由下式定义：其中CH是卷曲高度，CW是卷曲宽度。

69. 发明申请

US20110119857A1 METHOD OF MANUFACTURING BLADE RUBBER AND WIPER BLADE 有权
标题翻译：制造叶片橡胶和刮刀叶片的方法
公开(公告)号：US20110119857A1
公开(公告)日：2011-05-26
申请号：US13055057
申请日：2009-07-17
申请人： Norihito Mizote , Hiroaki Saito , Toru Soda
发明人： Norihito Mizote , Hiroaki Saito , Toru Soda
IPC分类号： B60S1/38 , B29C47/00
CPC分类号： B60S1/3877 , B60S1/381 , B60S2001/3829 , B60S2001/3836 , B60S2001/3898 , C08K3/04 , C08K5/01 , C08K5/14 , Y10T428/31855
摘要： A blade rubber having both of superior durability and wiping performance can be manufactured by using a non-diene-based rubber without environmental burden. A pair of blade-rubber molded bodies molded from the non-diene-based rubber is subjected to an irradiation treatment to generate radical active sites, and monomers are bound by graft polymerization as beginning at the radical active sites. Also, the monomers are adhered on a surface of the blade rubber either before or after the generation of the radical active sites. The irradiation treatment and the graft polymerization may be simultaneously performed or independently performed in this order. In this manner, a surface treatment for reducing friction of the non-diene-based rubber having superior durability can be performed without halogen, and therefore, a blade rubber having superior durability and wiping performance can be manufactured.
摘要翻译：具有优异的耐久性和擦拭性能的刀片橡胶可以通过使用不带环境负荷的非二烯类橡胶来制造。对由非二烯类橡胶成型的一对刀片橡胶成型体进行照射处理，生成自由基活性部位，单体在自由基活性部位开始接枝聚合。此外，单体在产生基团活性部位之前或之后粘附在刮片橡胶的表面上。照射处理和接枝聚合可以按顺序同时进行或独立地进行。以这种方式，可以在没有卤素的情况下进行用于降低耐久性优异的非二烯系橡胶的摩擦的表面处理，因此，可以制造具有优异的耐久性和擦拭性能的刮板橡胶。

70. 发明授权

US07770554B2 Recoil starter 有权
标题翻译：回收起动器
公开(公告)号：US07770554B2
公开(公告)日：2010-08-10
申请号：US12249223
申请日：2008-10-10
申请人： Shigemitsu Chigira , Tetsuya Kasamatsu , Kenta Shofuda , Hiroaki Saito , Yuki Hoshi
发明人： Shigemitsu Chigira , Tetsuya Kasamatsu , Kenta Shofuda , Hiroaki Saito , Yuki Hoshi
IPC分类号： F02N1/00
CPC分类号： F02N3/02 , F02N15/022 , Y10T74/13
摘要： A recoil starter includes a base plate that has a bearing portion formed therein and a rotary shaft that is supported by the bearing portion so as to pass through the base plate. A rope reel is rotatably supported at one side of the base plate, and a recoil rope is wound around the rope reel. A recoil spiral spring urges the rope reel to rewind the recoil rope. A damper spring has one end connected to the rotary shaft and the other end connected to the rope reel, and a clutch mechanism is disposed on an end of the rotary shaft at the other side of the base plate. The clutch mechanism transfers a rotational force to an engine.
摘要翻译：反冲起动器包括具有形成在其中的轴承部分的基板和由轴承部分支撑以便穿过基板的旋转轴。绳卷轴可旋转地支撑在基板的一侧，并且反索绳索缠绕在绳卷轴上。反冲螺旋弹簧促使绳索卷轴重绕反冲绳。减振弹簧的一端连接到旋转轴，另一端连接到绳索卷盘，离合器机构设置在基板的另一侧的旋转轴的端部上。离合器机构将转动力传递给发动机。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式