专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US07977235B2 Method for manufacturing a semiconductor device with metal-containing cap layers 有权
标题翻译：制造具有含金属盖层的半导体器件的方法
公开(公告)号：US07977235B2
公开(公告)日：2011-07-12
申请号：US12363868
申请日：2009-02-02
申请人： Tadahiro Ishizaka
发明人： Tadahiro Ishizaka
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , H01L21/02074 , H01L21/28556 , H01L21/28562 , H01L21/31138 , H01L21/7685 , H01L21/76856 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, forming a patterned mask layer on the patterned substrate, where the patterned mask layer contains openings that expose the Cu metal surfaces. The method further includes depositing a metal-containing layer on the Cu metal surfaces, depositing an additional metal-containing layer on the patterned mask layer, and removing the patterned mask layer and the additional metal-containing layer from the patterned substrate to selectively form metal-containing cap layers on the Cu metal surfaces.
摘要翻译：一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的图案化衬底，在图案化衬底上形成图案化掩模层，其中图案化掩模层包含露出Cu金属表面的开口。该方法还包括在Cu金属表面上沉积含金属层，在图案化掩模层上沉积额外的含金属层，以及从图案化衬底去除图案化的掩模层和附加的含金属层以选择性地形成金属在Cu金属表面上的覆盖层。

62. 发明授权

US07884012B2 Void-free copper filling of recessed features for semiconductor devices 有权
标题翻译：半导体器件凹陷特征的无孔铜填充
公开(公告)号：US07884012B2
公开(公告)日：2011-02-08
申请号：US11864566
申请日：2007-09-28
申请人： Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
发明人： Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/76844 , H01L21/76862 , H01L21/76864 , H01L21/76868 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method is provided for void-free copper (Cu) filling of recessed features in a semiconductor device. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film on the patterned substrate, including in the recessed feature, depositing a Ru metal film on the barrier film, and depositing a discontinuous Cu seed layer on the Ru metal film, where the Cu seed layer partially covers the Ru metal film in the recessed feature. The method further includes exposing the substrate to an oxidation source gas that oxidizes the Cu seed layer and the portion of the Ru metal film not covered by the Cu seed layer, heat-treating the oxidized Cu seed layer and the oxidized Ru metal film under high vacuum conditions or in the presence of an inert gas to activate the oxidized Ru metal film for Cu plating, and filling the recessed feature with bulk Cu metal. The exposure to the oxidation source gas can be an air exposure commonly encountered in semiconductor device manufacturing prior to Cu plating.
摘要翻译：提供了一种用于半导体器件中凹陷特征的无空隙铜（Cu）填充的方法。该方法包括提供含有凹陷特征的图案化衬底，在图案化衬底上沉积阻挡膜，包括在凹陷特征中，在阻挡膜上沉积Ru金属膜，以及在Ru金属膜上沉积不连续的Cu籽晶层，其中Cu籽晶层部分地覆盖凹陷特征中的Ru金属膜。该方法还包括将衬底暴露于氧化Cu籽晶层的氧化源气体和未被Cu籽晶层覆盖的Ru金属膜的部分，在高温下热处理氧化的Cu种子层和氧化的Ru金属膜真空条件下或在惰性气体存在下活化用于Cu电镀的氧化的Ru金属膜，并用块状Cu金属填充凹陷特征。暴露于氧化源气体可以是在镀铜之前在半导体器件制造中通常遇到的空气暴露。

63. 发明授权

US07846841B2 Method for forming cobalt nitride cap layers 有权
标题翻译：形成氮化钴盖层的方法
公开(公告)号：US07846841B2
公开(公告)日：2010-12-07
申请号：US12242900
申请日：2008-09-30
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02074 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt nitride cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt nitride cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k dielectric regions, and selectively forming a cobalt nitride cap layer on the Cu paths relative to the low-k dielectric regions.
摘要翻译：提供了一种用于将氮化钴盖层整合到半导体器件的制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化衬底和在特征底部的第一金属化层，在第一金属化层上形成氮化钴覆盖层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一个实施例包括提供具有Cu路径和低k电介质区域的基本平坦表面的图案化衬底，以及相对于低k电介质区域在Cu路径上选择性地形成氮化钴覆盖层。

64. 发明授权

US07727883B2 Method of forming a diffusion barrier and adhesion layer for an interconnect structure 有权
标题翻译：形成用于互连结构的扩散阻挡层和粘附层的方法
公开(公告)号：US07727883B2
公开(公告)日：2010-06-01
申请号：US12242384
申请日：2008-09-30
申请人： Tadahiro Ishizaka , Shigeru Mizuno
发明人： Tadahiro Ishizaka , Shigeru Mizuno
IPC分类号： H01L21/4763
CPC分类号： H01L21/76844 , H01L21/76831 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76873 , H01L23/53238
摘要： A method of forming an interconnect structure is provided. The method includes depositing a cobalt metal layer in an interconnect opening formed within a dielectric material containing a dielectric reactant element. The method further includes, in any order, thermally reacting at least a portion of the cobalt metal layer with at least a portion of the dielectric material to form a diffusion barrier containing a compound of the reactive metal from the cobalt metal layer and the dielectric reactant element from the dielectric material, and forming a cobalt nitride adhesion layer in the interconnect opening. The method further includes filling the interconnect opening with Cu metal, where the diffusion barrier and the cobalt nitride adhesion layer surround the Cu metal in the interconnect opening.
摘要翻译：提供一种形成互连结构的方法。该方法包括在形成在包含介电反应物元件的电介质材料内的互连开口中沉积钴金属层。该方法还包括以任何顺序使钴金属层的至少一部分与电介质材料的至少一部分热反应形成包含来自钴金属层和介电反应物的反应性金属化合物的扩散阻挡层元件，并且在互连开口中形成氮化钴粘合层。该方法还包括用Cu金属填充互连开口，其中扩散阻挡层和氮化钴粘合层围绕互连开口中的Cu金属。

65. 发明申请

US20100081275A1 METHOD FOR FORMING COBALT NITRIDE CAP LAYERS 有权
标题翻译：形成碳酸盐盖层的方法
公开(公告)号：US20100081275A1
公开(公告)日：2010-04-01
申请号：US12242900
申请日：2008-09-30
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02074 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt nitride cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt nitride cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k dielectric regions, and selectively forming a cobalt nitride cap layer on the Cu paths relative to the low-k dielectric regions.
摘要翻译：提供了一种用于将氮化钴盖层整合到半导体器件的制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化衬底和在特征底部的第一金属化层，在第一金属化层上形成氮化钴覆盖层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一个实施例包括提供具有Cu路径和低k电介质区域的基本平坦表面的图案化衬底，以及相对于低k电介质区域在Cu路径上选择性地形成氮化钴覆盖层。

66. 发明申请

US20100081271A1 METHOD OF FORMING A DIFFUSION BARRIER AND ADHESION LAYER FOR AN INTERCONNECT STRUCTURE 有权
标题翻译：用于互连结构的扩散障碍物和粘附层的形成方法
公开(公告)号：US20100081271A1
公开(公告)日：2010-04-01
申请号：US12242384
申请日：2008-09-30
申请人： Tadahiro Ishizaka , Shigeru Mizuno
发明人： Tadahiro Ishizaka , Shigeru Mizuno
IPC分类号： H01L21/4763
CPC分类号： H01L21/76844 , H01L21/76831 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76873 , H01L23/53238
摘要： A method of forming an interconnect structure is provided. The method includes depositing a cobalt metal layer in an interconnect opening formed within a dielectric material containing a dielectric reactant element. The method further includes, in any order, thermally reacting at least a portion of the cobalt metal layer with at least a portion of the dielectric material to form a diffusion barrier containing a compound of the reactive metal from the cobalt metal layer and the dielectric reactant element from the dielectric material, and forming a cobalt nitride adhesion layer in the interconnect opening. The method further includes filling the interconnect opening with Cu metal, where the diffusion barrier and the cobalt nitride adhesion layer surround the Cu metal in the interconnect opening.
摘要翻译：提供一种形成互连结构的方法。该方法包括在形成在包含介电反应物元件的电介质材料内的互连开口中沉积钴金属层。该方法还包括以任何顺序使钴金属层的至少一部分与电介质材料的至少一部分热反应形成包含来自钴金属层和介电反应物的反应性金属化合物的扩散阻挡层元件，并且在互连开口中形成氮化钴粘合层。该方法还包括用Cu金属填充互连开口，其中扩散阻挡层和氮化钴粘合层围绕互连开口中的Cu金属。

67. 发明授权

US07645484B2 Method of forming a metal carbide or metal carbonitride film having improved adhesion 失效
标题翻译：形成具有改善的粘附性的金属碳化物或金属碳氮化物膜的方法
公开(公告)号：US07645484B2
公开(公告)日：2010-01-12
申请号：US11393872
申请日：2006-03-31
申请人： Tadahiro Ishizaka
发明人： Tadahiro Ishizaka
IPC分类号： C23C16/00
CPC分类号： C23C16/32 , C23C16/36 , C23C16/45527 , C23C16/45542 , C23C16/45565 , C23C16/45574 , C23C16/5096
摘要： A method for forming a metal carbide or metal carbonitride film on a substrate using a vapor deposition process. The method includes comprises introducing a first process material, such as a film precursor, to the substrate followed by introducing a second process material, such as a film reducing agent, to the substrate, whereby plasma can be formed during the introduction of the second process material in order to assist reduction of the first process material on the substrate. Additionally, the temperature of the substrate is elevated to a value approximately equal to or greater than the decomposition temperature of the first process material in order to improve adhesion properties for the metal carbide or metal carbonitride film.
摘要翻译：使用蒸镀法在基板上形成金属碳化物或金属碳氮化物膜的方法。该方法包括将诸如膜前体的第一处理材料引入到基板，然后将诸如薄膜还原剂的第二处理材料引入到基板中，由此在引入第二工艺期间可以形成等离子体材料，以帮助减少基材上的第一工艺材料。此外，为了提高金属碳化物或金属碳氮化物膜的粘合性，将基板的温度升高到等于或大于第一处理材料的分解温度的值。

68. 发明申请

US20090087981A1 VOID-FREE COPPER FILLING OF RECESSED FEATURES FOR SEMICONDUCTOR DEVICES 有权
标题翻译：无阻塞铜填充半导体器件的特征
公开(公告)号：US20090087981A1
公开(公告)日：2009-04-02
申请号：US11864566
申请日：2007-09-28
申请人： Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
发明人： Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/76844 , H01L21/76862 , H01L21/76864 , H01L21/76868 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method is provided for void-free copper (Cu) filling of recessed features in a semiconductor device. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film on the patterned substrate, including in the recessed feature, depositing a Ru metal film on the barrier film, and depositing a discontinuous Cu seed layer on the Ru metal film, where the Cu seed layer partially covers the Ru metal film in the recessed feature. The method further includes exposing the substrate to an oxidation source gas that oxidizes the Cu seed layer and the portion of the Ru metal film not covered by the Cu seed layer, heat-treating the oxidized Cu seed layer and the oxidized Ru metal film under high vacuum conditions or in the presence of an inert gas to activate the oxidized Ru metal film for Cu plating, and filling the recessed feature with bulk Cu metal. The exposure to the oxidation source gas can be an air exposure commonly encountered in semiconductor device manufacturing prior to Cu plating.
摘要翻译：提供了一种用于半导体器件中凹陷特征的无空隙铜（Cu）填充的方法。该方法包括提供含有凹陷特征的图案化衬底，在图案化衬底上沉积阻挡膜，包括在凹陷特征中，在阻挡膜上沉积Ru金属膜，以及在Ru金属膜上沉积不连续的Cu籽晶层，其中Cu籽晶层部分地覆盖凹陷特征中的Ru金属膜。该方法还包括将衬底暴露于氧化Cu籽晶层的氧化源气体和未被Cu籽晶层覆盖的Ru金属膜的部分，在高温下热处理氧化的Cu种子层和氧化的Ru金属膜真空条件下或在惰性气体存在下活化用于Cu电镀的氧化的Ru金属膜，并用块状Cu金属填充凹陷特征。暴露于氧化源气体可以是在镀铜之前在半导体器件制造中通常遇到的空气暴露。

69. 发明申请

US20070251445A1 Method for Depositing a Barrier Layer on a Low Dielectric Constant Material 有权
标题翻译：在低介电常数材料上沉积阻挡层的方法
公开(公告)号：US20070251445A1
公开(公告)日：2007-11-01
申请号：US11745384
申请日：2007-05-07
申请人： Tadahiro Ishizaka
发明人： Tadahiro Ishizaka
IPC分类号： C30B23/00 , C23C16/00 , C30B25/00
CPC分类号： C23C16/0281 , C23C16/34 , C23C16/36 , C23C16/45536 , C23C16/4554 , H01J37/32091 , H01J2237/2001 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： Embodiments of an apparatus and methods for forming a tantalum containing film using plasma enhanced atomic layer deposition are generally described herein. Other embodiments may be described and claimed.
摘要翻译：本文通常描述使用等离子体增强原子层沉积形成含钽膜的设备和方法的实施例。可以描述和要求保护其他实施例。

70. 发明申请

US20070218670A1 Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper 有权
标题翻译：等离子体增强了对铜具有良好附着力的TaC和TaCN膜的原子层沉积方法
公开(公告)号：US20070218670A1
公开(公告)日：2007-09-20
申请号：US11378271
申请日：2006-03-20
申请人： Tadahiro Ishizaka
发明人： Tadahiro Ishizaka
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/32 , C23C16/36 , C23C16/4554 , C23C16/5096 , H01L21/28562
摘要： A method for processing a substrate for forming TaC and TaCN films having good adhesion to Cu. The method includes disposing the substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, and depositing a TaC or TaCN film on the substrate using the PEALD process. The PEALD process includes (a) exposing the substrate to a first process material containing tantalum, (b) exposing the substrate to a second process material containing a plasma excited reducing agent, (c) repeating steps (a) (b) a predetermined number of times, (d) exposing the substrate to plasma excited Argon, and (e) repeating steps (c) and (d) until the TaC or TaCN film has a desired thickness. Preferably, purging of the process chamber is performed after one or more of the exposing steps.
摘要翻译：一种处理用于形成对Cu具有良好粘附性的TaC和TaCN膜的基板的方法。该方法包括将衬底设置在配置为执行PEALD工艺的等离子体增强原子层沉积（PEALD）系统的处理室中，以及使用PEALD工艺在衬底上沉积TaC或TaCN膜。 PEALD工艺包括（a）将衬底暴露于含有钽的第一工艺材料，（b）将衬底暴露于含有等离子体激发还原剂的第二工艺材料，（c）重复步骤（a）（b）预定数量的时间，（d）将衬底暴露于等离子体激发的氩，和（e）重复步骤（c）和（d），直到TaC或TaCN膜具有所需的厚度。优选地，在一个或多个曝光步骤之后执行处理室的清洗。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式