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61. 发明申请

US20110129596A1 Deposition apparatus and method of manufacturing organic light emitting device using the same 审中-公开
标题翻译：使用该有机发光装置的沉积装置和制造方法
公开(公告)号：US20110129596A1
公开(公告)日：2011-06-02
申请号：US12801601
申请日：2010-06-16
申请人： Jung-Min Lee , Choong-Ho Lee , Yoon-Chan Oh , Soo-Jin Park
发明人： Jung-Min Lee , Choong-Ho Lee , Yoon-Chan Oh , Soo-Jin Park
IPC分类号： B05D5/12 , B05C9/00 , B05D3/00
CPC分类号： H01L51/0008
摘要： A deposition apparatus that improves deposition characteristics and the uniformity of a deposited layer, and a method of manufacturing an organic light emitting device using the deposition apparatus. The deposition apparatus includes: a base; a heat blocking layer formed on the base; a heat emitting layer patterned into stripes and formed on the heat blocking layer to heat a deposition material to be deposited; and a barrier rib formed and patterned on the heat blocking layer to define a space in which the deposition material is disposed.
摘要翻译：改善沉积特性和沉积层的均匀性的沉积设备，以及使用沉积设备制造有机发光器件的方法。沉积设备包括：基底; 形成在基底上的热阻层; 形成条纹并形成在热阻层上的发热层，以加热待沉积的沉积材料; 以及在所述热阻层上形成和图案化以限定其中设置所述沉积材料的空间的障壁。

62. 发明授权

US07842570B2 Semiconductor memory devices and methods of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07842570B2
公开(公告)日：2010-11-30
申请号：US12137976
申请日：2008-06-12
申请人： Albert Fayrushin , Byung-Yong Choi , Choong-Ho Lee
发明人： Albert Fayrushin , Byung-Yong Choi , Choong-Ho Lee
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521
摘要： In methods of manufacturing a memory device, a tunnel insulation layer is formed on a substrate. A floating gate having a substantially uniform thickness is formed on the tunnel insulation layer. A dielectric layer is formed on the floating gate. A control gate is formed on the dielectric layer. A flash memory device including the floating gate may have more uniform operating characteristics.
摘要翻译：在制造存储器件的方法中，在衬底上形成隧道绝缘层。在隧道绝缘层上形成具有基本均匀厚度的浮栅。在浮栅上形成介电层。在电介质层上形成控制栅极。包括浮动栅极的闪速存储器件可具有更均匀的操作特性。

63. 发明授权

US07807009B2 Hermetic sealing apparatus and hermetic sealing method using frit 有权
标题翻译：密封装置和使用玻璃料的气密密封方法
公开(公告)号：US07807009B2
公开(公告)日：2010-10-05
申请号：US12228994
申请日：2008-08-18
申请人： Jung-Min Lee , Choong-Ho Lee , Seok-Joon Yoon , Won-Kyu Choe , Tae-Wook Kang
发明人： Jung-Min Lee , Choong-Ho Lee , Seok-Joon Yoon , Won-Kyu Choe , Tae-Wook Kang
IPC分类号： B32B37/06
CPC分类号： B32B37/0046 , B23K26/0661 , B32B37/065 , B32B2309/02 , B32B2310/0843 , B32B2457/202 , B32B2457/206 , H01L21/67092 , H01L21/67115 , H01L21/67126 , H01L51/5246 , H01L2924/0002 , H01L2924/00
摘要： An hermetic sealing apparatus is discussed. The apparatus may include one or more of the following a glass mask disposed on an upper surface of a first substrate, a support member disposed on an upper surface of the glass mask, a laser irradiation member positioned spaced on the upper surface of the glass mask, a plurality of lower support members disposed in a contour region of a lower surface of the second substrate, and pressing members disposed on a lower surface of the lower support members.
摘要翻译：讨论了一种密封装置。该装置可以包括以下中的一个或多个设置在第一基板的上表面上的玻璃掩模，设置在玻璃掩模的上表面上的支撑构件，位于玻璃掩模的上表面上的激光照射构件，设置在所述第二基板的下表面的轮廓区域中的多个下支撑构件和设置在所述下支撑构件的下表面上的按压构件。

64. 发明申请

US20090273655A1 INK RESERVOIR FOR INKJET PRINT SYSTEM 审中-公开
标题翻译：喷墨打印系统的墨盒
公开(公告)号：US20090273655A1
公开(公告)日：2009-11-05
申请号：US11720959
申请日：2005-06-14
申请人： Jin-Cheol Song , Tae-Keun Park , Choong-Ho Lee , Sang-Yup Yu
发明人： Jin-Cheol Song , Tae-Keun Park , Choong-Ho Lee , Sang-Yup Yu
IPC分类号： B41J2/175
CPC分类号： B41J2/17523 , B41J2/17513 , B41J2/17553 , B41J2/17566
摘要： A replaceable ink reservoir adapted to an inkjet print system is provided. Since the inkjet print system of the conventional arts drives an air pump to inject air into the ink reservoir to discharge the ink stored in the ink storage pack to a printer cartridge, serious noise may be generated when the air pump is driven. In addition, in order to discharge the ink through the injection of the air, the ink reservoir should be one integrated body having a hermetically sealed structure, therefore, a user cannot visually check an ink storage level in the ink storage pack from the exterior of the ink reservoir. Further, since a nozzle connecting pipe is always connected to an ink outlet port connected to a front end of the ink storage pack, it is difficult to uniformly maintain discharge pressure of the ink, thereby causing an error image to be formed on a recording medium. Therefore, the present invention provides an ink reservoir for an inkjet print system, which is visually checkable an ink discharge amount in an ink storage pack and refilling the ink in the ink storage pack received in the ink reservoir by constituting the ink reservoir using transparent assemblies, discharges the ink in the ink storage pack received in the ink reservoir using inherent expansion of an expansion member, and includes a dual safety device and a dual cover installed at front ends of the ink storage pack and the ink outlet port to block ink discharged from the ink storage pack when a print operation is completed, thereby preventing unnecessary consumption of the ink.
摘要翻译：提供了适用于喷墨打印系统的可更换的墨水储存器。由于传统技术的喷墨打印系统驱动空气泵将空气喷射到墨水容器中以将存储在墨水存储包中的墨水排出到打印机墨盒，所以当驱动空气泵时可能产生严重的噪音。此外，为了通过喷射空气排出墨水，墨水储存器应该是具有气密密封结构的一个整体，因此，用户不能从墨水存储包的外部目视检查墨水存储水平墨水盒。此外，由于喷嘴连接管总是连接到与储墨盒的前端连接的墨出口，所以难以均匀地维持墨的排出压力，从而在记录介质上形成误差图像。因此，本发明提供了一种用于喷墨打印系统的墨水储存器，其目视上可以检查墨水储存包装中的墨水排出量，并且通过使用透明组件构成墨水储存器来重新填充容纳在墨水储存器中的墨水储存包装中的墨水利用扩展构件的固有膨胀将容纳在墨水储存器中的墨水储存器中的墨水排出，并且包括双重安全装置和安装在墨水存储包的前端的双盖和用于阻止墨水排放的墨水出口当打印操作完成时从墨水存储包中，从而防止墨水的不必要的消耗。

65. 发明申请

US20090229745A1 Hermetic sealing apparatus and hermetic sealing method using frit 有权
标题翻译：密封装置和使用玻璃料的气密密封方法
公开(公告)号：US20090229745A1
公开(公告)日：2009-09-17
申请号：US12228994
申请日：2008-08-18
申请人： Jung-Min Lee , Choong-Ho Lee , Seok-Joon Yoon , Won-Kyu Choe , Tae-Wook Kang
发明人： Jung-Min Lee , Choong-Ho Lee , Seok-Joon Yoon , Won-Kyu Choe , Tae-Wook Kang
IPC分类号： B32B37/06
CPC分类号： B32B37/0046 , B23K26/0661 , B32B37/065 , B32B2309/02 , B32B2310/0843 , B32B2457/202 , B32B2457/206 , H01L21/67092 , H01L21/67115 , H01L21/67126 , H01L51/5246 , H01L2924/0002 , H01L2924/00
摘要： An hermetic sealing apparatus is discussed. The apparatus may include one or more of the following a glass mask disposed on an upper surface of a first substrate, a support member disposed on an upper surface of the glass mask, a laser irradiation member positioned spaced on the upper surface of the glass mask, a plurality of lower support members disposed in a contour region of a lower surface of the second substrate, and pressing members disposed on a lower surface of the lower support members.
摘要翻译：讨论了一种密封装置。该装置可以包括以下中的一个或多个设置在第一基板的上表面上的玻璃掩模，设置在玻璃掩模的上表面上的支撑构件，位于玻璃掩模的上表面上的激光照射构件，设置在所述第二基板的下表面的轮廓区域中的多个下支撑构件和设置在所述下支撑构件的下表面上的按压构件。

66. 发明申请

US20080203377A1 METHODS OF MANUFACTURING NON-VOLATILE MEMORY DEVICES BY IMPLANTING METAL IONS INTO GRAIN BOUNDARIES OF VARIABLE RESISTANCE LAYERS, AND RELATED DEVICES 有权
标题翻译：通过将金属离子注入可变电阻层的晶界来制造非易失性存储器件的方法及相关器件
公开(公告)号：US20080203377A1
公开(公告)日：2008-08-28
申请号：US12035169
申请日：2008-02-21
申请人： Byung-Yong Choi , Choong-Ho Lee , Kyu-Charn Park
发明人： Byung-Yong Choi , Choong-Ho Lee , Kyu-Charn Park
IPC分类号： H01L47/00
CPC分类号： H01L45/165 , H01L27/2436 , H01L45/085 , H01L45/1206 , H01L45/1226 , H01L45/146
摘要： Integrated circuit nonvolatile memory devices are manufactured by forming a variable resistance layer on an integrated circuit substrate. The variable resistance layer includes grains that define grain boundaries between the grains. Conductive filaments are formed along at least some of the grain boundaries. Electrodes are formed on the variable resistance layer. The conductive filaments may be formed by implanting conductive ions into at least some of the grain boundaries. Moreover, the variable resistance layer may be a variable resistance oxide of a metal, and the conductive filaments may be the metal. Related devices are also disclosed.
摘要翻译：通过在集成电路基板上形成可变电阻层来制造集成电路非易失性存储器件。可变电阻层包括限定晶粒之间的晶界的晶粒。沿着至少一些晶界形成导电丝。电极形成在可变电阻层上。可以通过将导电离子注入至少一些晶界来形成导电细丝。此外，可变电阻层可以是金属的可变电阻氧化物，并且导电丝可以是金属。还公开了相关设备。

67. 发明申请

US20080164509A1 Nonvolatile Memory Devices and Methods of Forming the Same 有权
标题翻译：非易失存储器件及其形成方法
公开(公告)号：US20080164509A1
公开(公告)日：2008-07-10
申请号：US11972243
申请日：2008-01-10
申请人： Seung-Chul Lee , Keun-Ho Lee , Choong-Ho Lee , Byung-Yong Choi
发明人： Seung-Chul Lee , Keun-Ho Lee , Choong-Ho Lee , Byung-Yong Choi
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/11521 , G11C16/0483 , G11C16/3418 , H01L27/115 , H01L27/11524
摘要： A nonvolatile memory device includes a semiconductor substrate of a first conductivity type, a plurality of word lines on the semiconductor substrate, each the plurality of word lines including a floating gate of a second conductivity type. A ground select line and a string select line are disposed on respective sides of word lines. An impurity region of the second conductivity type underlies a first word line adjacent the ground select line. The device may further include a second impurity region of the second conductivity type underlying a second word line adjacent the string select line. In still further embodiments, the device may further include third impurity regions of the second conductivity type underlying respective third word lines between the first word line and the second word line. Methods of forming such devices are also provided.
摘要翻译：非易失性存储器件包括第一导电类型的半导体衬底，半导体衬底上的多个字线，多条字线包括第二导电类型的浮置栅极。地线选择线和串选择线设置在字线的相应侧上。第二导电类型的杂质区域位于与地选线相邻的第一字线的正下方。该器件还可以包括第二导电类型的第二杂质区域，位于与串选择线相邻的第二字线下方。在另外的实施例中，器件还可以包括在第一字线和第二字线之间的相应第三字线下方的第二导电类型的第三杂质区。还提供了形成这种装置的方法。

68. 发明申请

US20080081411A1 Methods of Manufacturing Non-Volatile Memory Devices 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20080081411A1
公开(公告)日：2008-04-03
申请号：US11616582
申请日：2006-12-27
申请人： Hye-Jin Cho , Kyu-Charn Park , Choong-Ho Lee , Byung-Yong Choi
发明人： Hye-Jin Cho , Kyu-Charn Park , Choong-Ho Lee , Byung-Yong Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521
摘要： In a method of manufacturing a non-volatile memory device, a conductive structure is formed on a substrate. The conductive structure includes a tunnel oxide pattern, a first conductive pattern, a pad oxide pattern and a hard mask pattern. A trench is formed on the substrate using the conductive structure as an etching mask. An inner oxide layer is formed on an inner wall of the trench and sidewalls of the tunnel oxide pattern and the first conductive pattern. The inner oxide layer is cured, thereby forming a silicon nitride layer on the inner oxide layer. A device isolation pattern is formed in the trench, and the hard mask pattern and the pad oxide pattern are removed from the substrate. A dielectric layer and a second conductive pattern are formed on the substrate. Accordingly, the silicon nitride layer prevents-hydrogen (H) atoms from leaking into the device isolation pattern.
摘要翻译：在制造非易失性存储器件的方法中，在衬底上形成导电结构。导电结构包括隧道氧化物图案，第一导电图案，衬垫氧化物图案和硬掩模图案。使用导电结构作为蚀刻掩模在衬底上形成沟槽。在沟槽的内壁和隧道氧化物图案的侧壁和第一导电图案上形成内部氧化物层。内部氧化物层被固化，从而在内部氧化物层上形成氮化硅层。在沟槽中形成器件隔离图案，并且从衬底去除硬掩模图案和衬垫氧化物图案。在基板上形成电介质层和第二导电图案。因此，氮化硅层防止氢（H）原子泄漏到器件隔离图案中。

69. 发明申请

US20070205459A1 Nonvolatile memory devices and methods of forming the same 审中-公开
标题翻译：非易失存储器件及其形成方法
公开(公告)号：US20070205459A1
公开(公告)日：2007-09-06
申请号：US11653359
申请日：2007-01-16
申请人： Eun-Suk Cho , Dong-Gun Park , Choong-Ho Lee , Jong-Jin Lee , Jeong-Dong Choe
发明人： Eun-Suk Cho , Dong-Gun Park , Choong-Ho Lee , Jong-Jin Lee , Jeong-Dong Choe
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , B82Y10/00 , H01L27/115 , H01L27/11521 , H01L29/40114 , H01L29/40117 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7854 , H01L29/7881 , H01L29/792
摘要： A nonvolatile memory device includes a semiconductor pin including a first semiconductor pattern, a second semiconductor pattern on the first semiconductor pattern, and a third semiconductor pattern, disposed between the first semiconductor pattern and the second semiconductor pattern, connecting the first semiconductor pattern and the second semiconductor pattern, a charge storage layer on the second semiconductor pattern with a tunneling insulation layer interposed therebetween, and a gate electrode on the charge storage layer with a blocking insulation layer interposed therebetween, wherein a width of the second semiconductor pattern is greater than a width of the third semiconductor pattern.
摘要翻译：非易失性存储器件包括：半导体引脚，包括第一半导体图案，第一半导体图案上的第二半导体图案和设置在第一半导体图案和第二半导体图案之间的第三半导体图案，将第一半导体图案和第二半导体图案半导体图案，在第二半导体图案上的电荷存储层，其间插入有隧道绝缘层，以及在电荷存储层上的栅电极，其间插入有阻挡绝缘层，其中第二半导体图案的宽度大于宽度的第三半导体图案。

70. 发明申请

US20070090449A1 Non-volatile memory devices and methods of forming the same 有权
标题翻译：非易失性存储器件及其形成方法
公开(公告)号：US20070090449A1
公开(公告)日：2007-04-26
申请号：US11580086
申请日：2006-10-13
申请人： Byung-Yong Choi , Choong-Ho Lee , Dong-Gun Park
发明人： Byung-Yong Choi , Choong-Ho Lee , Dong-Gun Park
IPC分类号： H01L29/792
CPC分类号： H01L27/115 , H01L27/11519 , H01L27/11526 , H01L27/11529
摘要： A non-volatile memory device and a method of forming the same are provided. The non-volatile memory device may include a cell isolation pattern and a semiconductor pattern sequentially stacked on a predetermined or given region of a semiconductor substrate, a cell gate line on the semiconductor pattern and on a top surface of the semiconductor substrate on one side of the cell isolation pattern, a multi-layered trap insulation layer between the cell gate line and the semiconductor substrate, and the cell gate line and the semiconductor pattern, a first impurity diffusion layer in the semiconductor substrate on both sides of the cell gate line and a second impurity diffusion layer in the semiconductor pattern on both sides of the cell gate line.
摘要翻译：提供了一种非易失性存储器件及其形成方法。非易失性存储器件可以包括依次层叠在半导体衬底的预定或给定区域上的单元隔离图案和半导体图案，半导体图案上的单元栅极线和半导体衬底的一侧的顶表面上的半导体图案电池隔离图案，单元栅极线和半导体衬底之间的多层陷阱绝缘层，以及单元栅极线和半导体图案，在单元栅极线的两侧的半导体衬底中的第一杂质扩散层和位于单元栅极线两侧的半导体图案中的第二杂质扩散层。

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