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    • 61. 发明授权
    • Method and apparatus for maintaining multiple sets of identity data
    • 用于维护多组身份数据的方法和装置
    • US08024360B2
    • 2011-09-20
    • US11009921
    • 2004-12-10
    • Paul Moore
    • Paul Moore
    • G06F7/00G06F17/30
    • H04L61/1523G06F21/31G06F2221/2117G06F2221/2149H04L63/104
    • A method of assigning the UNIX computers in a network to one of a plurality of groups called zones, of creating independent sets of UNIX identity information for each network entity (user or group) for separate zones, and of associating an entity's sets of UNIX entity information with a single global entity record for the entity in the network's identity resolver. A further method of allowing a UNIX computer to request entity information from the identity resolver, and of the identity resolver returning resolved entity information appropriate for the requesting computer's zone. A further method of managing sets of zone-specific UNIX identity information in the identity resolver to ensure that entity names and entity identification numbers are not duplicated within a zone and to all the same names and numbers to be duplicated across zones. Other embodiments are also described.
    • 将网络中的UNIX计算机分配给称为区域的多个组之一的方法,为用于单独区域的每个网络实体(用户或组)创建独立的UNIX身份信息集合,以及将实体的UNIX实体集合 信息与网络身份解析器中的实体具有单个全局实体记录。 允许UNIX计算机从身份解析器请求实体信息以及身份解析器返回适合于请求计算机区域的解析实体信息的另一种方法。 在身份解析器中管理区域特定的UNIX身份信息集合的另一种方法,以确保实体名称和实体标识号不在区域内复制,并且跨区域复制所有相同的名称和数字。 还描述了其它实施例。
    • 62. 发明申请
    • Single Poly BiCMOS Flash Cell With Floating Body
    • 单体Poly BiCMOS闪电池与浮体
    • US20070235816A1
    • 2007-10-11
    • US11278753
    • 2006-04-05
    • Paul Moore
    • Paul Moore
    • H01L29/76H01L29/94
    • H01L27/0623H01L27/105H01L27/11526H01L27/11546
    • A BiCMOS integrated circuit (IC) includes a floating gate-type non-volatile memory (NVM) device that uses the polycrystalline silicon gate of a CMOS FET and the P-base and N-emitter diffusions of a bipolar transistor to provide an isolated P-type body and N-type source/drain diffusions. The P-body diffusion of the NVM device is isolated from a P-substrate by an N-well, thus facilitating the use of reduced positive and negative voltage levels to produce the onset of Fowler-Nordheim tunneling without the need for a triple-well structure. The polysilicon gate structure is formed on a suitable gate oxide over the P-body. The source/drain diffusions, which like the N-emitter diffusions of the bipolar transistor have no LDD, produce a reduced field drop across the gate oxide to allow Fowler-Nordheim tunneling from the source side.
    • BiCMOS集成电路(IC)包括使用CMOS FET的多晶硅栅极和双极晶体管的P基极和N发射极扩散的浮栅型非易失性存储器(NVM)器件,以提供隔离的P 型体和N型源/漏扩散。 NVM器件的P体扩散通过N阱从P衬底分离,因此有助于使用降低的正电压和负电压电平来产生Fowler-Nordheim隧道的发生,而不需要三阱 结构体。 多晶硅栅极结构形成在P体上的合适的栅极氧化物上。 类似于双极晶体管的N-发射极扩散的源极/漏极扩散器不具有LDD,在栅极氧化物上产生降低的场降,以允许源极侧的Fowler-Nordheim隧穿。