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61. 发明申请

US20050263835A1 Semiconductor device, and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050263835A1
公开(公告)日：2005-12-01
申请号：US11181788
申请日：2005-07-15
申请人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
发明人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
IPC分类号： H01L21/318 , G02B27/01 , H01L21/336 , H01L29/76 , H01L29/786
CPC分类号： H01L27/1259 , G02B27/017 , G02F1/133345 , G02F1/1362 , G02F2202/103 , G02F2202/105 , H01L27/1214 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/6675 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L2029/7863
摘要： A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased, to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.
摘要翻译：使用SiH 4 N，N 2 O和H 2 O等通过等离子体CVD制造氮氧化硅膜，并且将其施加到栅极绝缘膜（图1A中的1004）。氮氧化硅膜的特性主要通过改变N 2 O 2和H 2 O 2的流速来控制。可以通过增加H 2 2的流量来增加膜中的氢浓度和氮浓度。此外，可以降低膜中的氢浓度和氮浓度，以通过N 2 O 2 O的流量的增加来提高氧浓度。栅极绝缘膜确保TFT的特性的稳定性和可靠性，例如阈值电压（V SUB）和其阈值常数（S值）。

62. 发明授权

US06703264B2 Method of manufacturing a semiconductor device 有权
公开(公告)号：US06703264B2
公开(公告)日：2004-03-09
申请号：US09852063
申请日：2001-05-08
申请人： Shunpei Yamazaki , Mitsunori Sakama , Takeshi Fukada
发明人： Shunpei Yamazaki , Mitsunori Sakama , Takeshi Fukada
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.

63. 发明授权

US06521912B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06521912B1
公开(公告)日：2003-02-18
申请号：US09703593
申请日：2000-11-02
申请人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
发明人： Mitsunori Sakama , Noriko Ishimaru , Taketomi Asami , Shunpei Yamazaki
IPC分类号： H10L2100
CPC分类号： H01L27/1259 , G02B27/017 , G02F1/133345 , G02F1/1362 , G02F2202/103 , G02F2202/105 , H01L27/1214 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/6675 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L2029/7863
摘要： A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.
摘要翻译：使用SiH 4，N 2 O和H 2通过等离子体CVD制造氮氧化硅膜，并施加到TFT的栅极绝缘膜（图1A中的1004）。主要通过改变N2O和H2的流量来控制氮氧化硅膜的特性。通过H2的流量的增加可以提高膜中的氢浓度和氮浓度。此外，可以降低膜中的氢浓度和氮浓度，通过N2O的流量的增加来提高氧浓度。栅极绝缘膜确保TFT的特性的稳定性和可靠性，例如阈值电压（Vth）和其子阈值常数（S值）。

64. 发明授权

US06499427B1 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US06499427B1
公开(公告)日：2002-12-31
申请号：US09935660
申请日：2001-08-24
申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
发明人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
IPC分类号： C23C16509
CPC分类号： H01J37/32477 , C23C16/4401 , C23C16/5096 , Y10S438/905
摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
摘要翻译：在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加同时保持设备的扩大和易于加工的性能。等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

65. 发明授权

US06337229B1 Method of making crystal silicon semiconductor and thin film transistor 失效
标题翻译：制造晶体硅半导体和薄膜晶体管的方法
公开(公告)号：US06337229B1
公开(公告)日：2002-01-08
申请号：US08572008
申请日：1995-12-14
申请人： Shunpei Yamazaki , Mitsunori Sakama , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Mitsunori Sakama , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： To provide a crystalline silicon film showing properties preferable to a semiconductor device such as a thin film transistor (TFT) etc., a silicon oxide film is deposited on a glass substrate by a CVD process such as plasma CVD process, thermal CVD process or the like and an amorphous silicon film is continuously deposited thereon without bringing the silicon oxide film into contact with the atmosphere. The amorphous silicon film is annealed at 500 through 600° C. by adding a catalyst element such as nickel thereto and crystallized. A crystal silicon film having improved crystalline property is provided by further irradiating a laser beam thereon. In the provided crystalline silicon film the catalyst element diffuses to silicon oxide under the silicon film and the concentration of the catalyst element in the silicon film is lowered. By using the crystalline silicon film a semiconductor device such as TFT etc. having improved property (especially small off current) can be achieved.
摘要翻译：为了提供显示出诸如薄膜晶体管（TFT）等半导体器件的优选性能的结晶硅膜，通过诸如等离子体CVD工艺，热CVD工艺或CVD法的CVD工艺将氧化硅膜沉积在玻璃衬底上并且非晶硅膜不连续地沉积在其上而不使氧化硅膜与大气接触。通过向其中加入镍等催化剂元素并使其结晶，在500〜600℃下对非晶硅膜进行退火。通过在其上进一步照射激光束来提供具有改善的结晶特性的晶体硅膜。在所提供的晶体硅膜中，催化剂元素在硅膜下扩散到氧化硅上，并且硅膜中的催化剂元素的浓度降低。通过使用结晶硅膜，可以实现具有改善的特性（特别是小的截止电流）的诸如TFT等的半导体器件。

66. 发明授权

US6015762A Plasma CVD method 失效
公开(公告)号：US6015762A
公开(公告)日：2000-01-18
申请号：US748233
申请日：1996-11-12
申请人： Shunpei Yamazaki , Mitsunori Sakama , Masaaki Hiroki
发明人： Shunpei Yamazaki , Mitsunori Sakama , Masaaki Hiroki
IPC分类号： C23C16/50 , C23C16/40 , H01L21/205 , H01L21/285 , H01L21/31 , H01L21/316 , H01L29/786 , H01L21/02
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02274 , H01L21/31612
摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O.sub.2 -plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

67. 发明授权

US5187601A Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously 失效
标题翻译：用于制造高对比度液晶显示器的方法，包括同时激光划刻不透明和透明导电条
公开(公告)号：US5187601A
公开(公告)日：1993-02-16
申请号：US807748
申请日：1991-12-17
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/134336 , G02F1/133512
摘要： A method for forming a resistance-reducing electrode pattern in an electrooptical device includes the steps of: forming a transparent conductive film on a substrate; forming a plurality of opaque conductive strips on the film; and scribing the combined structure with a laser through the two layers to simultaneously divide the conductive strips into two parts and pattern the transparent film. In this manner, a pattern of transparent electrodes bordered with an opaque electrode pattern is formed. In specific embodiments, the opaque strips may comprise chromium, and the opaque conductive strips may be formed prior to application of the steps above by laser scribing an applied opaque film layer.
摘要翻译：在电光装置中形成电阻减少电极图案的方法包括以下步骤：在衬底上形成透明导电膜; 在所述膜上形成多个不透明导电条; 并通过两层用激光刻划组合结构，同时将导电条分成两部分，并对透明膜进行图案化。以这种方式，形成与不透明电极图案相邻的透明电极的图案。在具体实施例中，不透明条可以包括铬，并且不透明导电条可以在施加上述步骤之前通过激光划刻施加的不透明膜层而形成。

68. 发明授权

US5091638A Contact image sensor having light-receiving windows 失效
标题翻译：联系具有收光窗口的图像传感器
公开(公告)号：US5091638A
公开(公告)日：1992-02-25
申请号：US554342
申请日：1990-07-19
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
IPC分类号： H01L27/146 , H04N1/031
CPC分类号： H04N1/0316 , H01L27/14623 , H01L27/14665 , H04N1/0313
摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

69. 发明授权

US06673659B2 Semiconductor device and method of producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06673659B2
公开(公告)日：2004-01-06
申请号：US09771625
申请日：2001-01-30
申请人： Mitsunori Sakama , Noriko Ishimaru , Masahiko Miwa , Michinori Iwai
发明人： Mitsunori Sakama , Noriko Ishimaru , Masahiko Miwa , Michinori Iwai
IPC分类号： H01L2100
CPC分类号： H01L27/1218 , G02F1/13454 , H01L21/67236 , H01L27/1214 , H01L27/1262 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L2029/7863
摘要： A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film in which the composition ratios of N, O and H are continuously changed by changing the flow rates of H2 and N2O, is used as the base film to prevent a change in the TFT characteristics. The base film can be formed by varying the flow rates of H2 and N2O in the same film-forming chamber to enhance the productivity.
摘要翻译：为了防止杂质从玻璃基板扩散到有源层中，为了保持诸如TFT的Vth和S值的特性的稳定性，为了保持提高的生产率，为TFT形成基膜。使用通过改变H 2和N 2 O的流量来连续地改变N，O和H的组成比的膜作为基膜，以防止TFT特性的变化。基膜可以通过改变相同成膜室中的H 2和N 2 O的流速来提高生产率而形成。

70. 发明授权

US06268631B1 Glass substrate assembly, semiconductor device and method of heat-treating glass substrate 有权
标题翻译：玻璃基板组件，半导体器件和玻璃基板的热处理方法
公开(公告)号：US06268631B1
公开(公告)日：2001-07-31
申请号：US09294338
申请日：1999-04-20
申请人： Takeshi Fukada , Mitsunori Sakama , Satoshi Teramoto
发明人： Takeshi Fukada , Mitsunori Sakama , Satoshi Teramoto
IPC分类号： H01L2101
CPC分类号： C03C17/3482 , C03B25/00 , C03B32/00 , C03C17/001 , C03C17/22 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2218/32 , Y02P40/57
摘要： Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point. If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.
摘要翻译：改进的玻璃基板的热处理方法，特别是在其应变点周围或之上热处理基板（例如膜的形成，膜的生长和氧化）的情况。如果在基板上形成产生热量的装置，则能够很好地散热。在基板的至少一个表面上形成氮化铝膜。该氮化铝膜用作散热器，并且防止由诸如形成在玻璃基板表面上的TFT的器件产生的局部热量。

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