专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US08599124B2 Display device and electronic device 有权
公开(公告)号：US08599124B2
公开(公告)日：2013-12-03
申请号：US12624638
申请日：2009-11-24
申请人： Shunpei Yamazaki , Jun Koyama , Yoshifumi Tanada , Mitsuaki Osame , Hajime Kimura , Ryota Fukumoto , Hiromi Yanai
发明人： Shunpei Yamazaki , Jun Koyama , Yoshifumi Tanada , Mitsuaki Osame , Hajime Kimura , Ryota Fukumoto , Hiromi Yanai
IPC分类号： G09G3/36 , G09G3/30 , G09G3/32 , G06F3/038 , G09G5/00
CPC分类号： G09G3/3291 , G09G3/001 , G09G3/2022 , G09G3/3233 , G09G3/3258 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2300/0861 , G09G2310/0251 , G09G2310/027 , G09G2310/0283 , G09G2310/0289 , G09G2320/0271 , G09G2360/144 , H01L27/3265 , H01L27/3269
摘要： It is an object of the present invention to provide a display device in which images can be seen under a dark place to intense external light. In the display device, display is performed by changing the gray scale number depending on external light intensity, and display modes can be switched depending on contents displayed on the screen. An analog mode and a digital mode are switched depending on external light intensity. In an analog digital switching circuit, when a video signal is an analog value, a signal is outputted to a pixel array without any change and, when the video signal is a digital value, the signal is outputted to a circuit that performs a digital operation such as a latch circuit. Consequently, display gray scales of a pixel are changed appropriately. Accordingly, a clear image can be displayed. For example, it is possible to ensure visibility in a wide range of a dark place or under indoor florescent light to outdoor sun light.

62. 发明授权

US08570479B2 Liquid crystal electrooptical device 有权
标题翻译：液晶电光装置
公开(公告)号：US08570479B2
公开(公告)日：2013-10-29
申请号：US11624055
申请日：2007-01-17
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G02F1/1345
CPC分类号： G02F1/13452 , G02F1/1345
摘要： To provide means for resolving a problem in which in steps of connecting a panel array substrate and a stick substrate, connection failure is enhanced and reliability is deteriorated by a positional shift caused in connecting operation and a positional shift caused by shrinkage of the substrate, a shape of a total of a stick substrate 103 is constituted by a rectangular shape (Lx1×Ly1) and contiguous electrode pads are arranged to shift by Ts in Y-direction by which lead wirings of the panel array substrate and lead wirings of the stick substrate can be connected with high accuracy and an electrooptical device having high yield and excellent display characteristic is provided.
摘要翻译：为了提供解决在连接面板阵列基板和棒基板的步骤中的问题的装置，通过连接操作引起的位置偏移和由基板的收缩引起的位置偏移，提高了连接故障并且可靠性恶化，棒状基板103的总体形状由长方形（Lx1×Ly1）构成，连续的电极焊盘被布置成沿着Y方向移动Ts，面板阵列基板的引线与棒状基板的引线可以高精度地连接，并且提供具有高产量和优异的显示特性的电光装置。

63. 发明授权

US08514261B2 Information processing system 失效
标题翻译：信息处理系统
公开(公告)号：US08514261B2
公开(公告)日：2013-08-20
申请号：US12833384
申请日：2010-07-09
申请人： Yuji Kawasaki , Jun Koyama , Futoshi Ishi , Shunpei Yamazaki
发明人： Yuji Kawasaki , Jun Koyama , Futoshi Ishi , Shunpei Yamazaki
IPC分类号： H04N7/14
CPC分类号： H04N7/147 , A61B3/145 , A61B5/165 , G06F3/013 , G06T7/00 , G06T11/00 , G06T11/60 , H04N5/2621 , H04N2005/2726
摘要： In an information processing system provided with a camera and a microphone, for transmitting and receiving information of a user to and from another information processing system through a transmission lime, image data of the user obtained by a camera is stored in a memory in advance. When one user communicates another user, image data of the one user is obtained by the camera and is synthesized with the image data stored in the memory in advance by image-processing. The clothes, hair, background, make-up etc. of the one user are made different to reality and the image data are transmitted to the another user in the communication.
摘要翻译：在具有照相机和麦克风的信息处理系统中，通过发送灰度向另一个信息处理系统发送和接收用户的信息，由摄像机获得的用户的图像数据预先存储在存储器中。当一个用户传送另一个用户时，通过照相机获得一个用户的图像数据，并通过图像处理预先与存储在存储器中的图像数据合成。使一个用户的衣服，头发，背景，化妆等与现实不同，并且在通信中将图像数据发送给另一个用户。

64. 发明授权

US08502241B2 Method of driving a light emitting device 有权
公开(公告)号：US08502241B2
公开(公告)日：2013-08-06
申请号：US13347780
申请日：2012-01-11
申请人： Shunpei Yamazaki , Mitsuaki Osame , Jun Koyama
发明人： Shunpei Yamazaki , Mitsuaki Osame , Jun Koyama
IPC分类号： H01L33/00
CPC分类号： H05B33/08 , H01L27/124 , H05B33/0812 , H05B33/0896
摘要： The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |VDS| of the transistor is set equal to or larger than 1 V and equal to or less than |VGS−Vth|. The transistor is used as a resistor so that the resistance of a light emitting element can be held by the transistor. This slows down an increase in internal resistance of the light emitting element and the resultant current value reduction. Accordingly, a change with time in light emission luminance is reduced and the reliability is improved.

65. 发明授权

US08492766B2 Information device 有权
公开(公告)号：US08492766B2
公开(公告)日：2013-07-23
申请号：US13348707
申请日：2012-01-12
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01L29/04
CPC分类号： G06F3/0421 , G06F3/03545 , H01L27/14609 , H01L27/14643 , H01L27/14678 , H01L27/288 , H01L27/307 , H01L27/3227 , H01L27/323 , H01L27/3234 , H01L27/3244 , H04N1/00347 , H04N1/00392 , H04N1/024 , H04N1/02445 , H04N1/02472 , H04N1/02805 , H04N2201/0081 , H04N2201/0089
摘要： Problems exist in areas such as image visibility, endurance of the device, precision, miniaturization, and electric power consumption in an information device having a conventional resistive film method or optical method pen input function. Both EL elements and photoelectric conversion elements are arranged in each pixel of a display device in an information device of the present invention having a pen input function. Information input is performed by the input of light to the photoelectric conversion elements in accordance with a pen that reflects light by a pen tip. An information device with a pen input function, capable of displaying a clear image without loss of brightness in the displayed image, having superior endurance, capable of being miniaturized, and having good precision can thus be obtained.

66. 发明授权

US08476626B2 Semiconductor memory device including semiconductor and oxide semiconductor transistors 有权
标题翻译：半导体存储器件包括半导体和氧化物半导体晶体管
公开(公告)号：US08476626B2
公开(公告)日：2013-07-02
申请号：US12949641
申请日：2010-11-18
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
IPC分类号： H01L51/10
CPC分类号： H01L21/02554 , G11C11/403 , G11C11/405 , G11C16/0425 , H01L21/02565 , H01L21/02631 , H01L21/02664 , H01L27/0688 , H01L27/105 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L27/1156 , H01L27/1203 , H01L27/1225
摘要： It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes memory cells connected to each other in series and a capacitor. One of the memory cells includes a first transistor connected to a bit line and a source line, a second transistor connected to a signal line and a word line, and a capacitor connected to the word line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and one electrode of the capacitor are connected to one another.
摘要翻译：本发明的目的是提供一种具有新颖结构的半导体器件。半导体器件包括彼此串联连接的存储单元和电容器。一个存储单元包括连接到位线和源极线的第一晶体管，连接到信号线和字线的第二晶体管，以及连接到字线的电容器。第二晶体管包括氧化物半导体层。第一晶体管的栅电极，第二晶体管的源电极和漏电极之一以及电容器的一个电极彼此连接。

67. 发明授权

US08445962B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US08445962B2
公开(公告)日：2013-05-21
申请号：US12911083
申请日：2010-10-25
申请人： Satoshi Murakami , Shunpei Yamazaki , Jun Koyama , Mitsuaki Osamè , Yukio Tanaka , Yoshiharu Hirakata
发明人： Satoshi Murakami , Shunpei Yamazaki , Jun Koyama , Mitsuaki Osamè , Yukio Tanaka , Yoshiharu Hirakata
IPC分类号： H01L29/04
CPC分类号： H01L27/1244 , G02F1/13454 , G02F1/136213 , H01L27/1255 , H01L27/1259 , H01L27/15 , H01L29/458 , H01L29/66757 , H01L29/786 , H01L29/78645 , H01L29/78675 , H01L31/02164
摘要： An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented.

68. 发明授权

US08421350B2 Electro-optical device and electronic device 有权
公开(公告)号：US08421350B2
公开(公告)日：2013-04-16
申请号：US13492823
申请日：2012-06-09
申请人： Shunpei Yamazaki , Jun Koyama , Kunitaka Yamamoto , Toshimitsu Konuma
发明人： Shunpei Yamazaki , Jun Koyama , Kunitaka Yamamoto , Toshimitsu Konuma
IPC分类号： H01J1/62
CPC分类号： H01L51/5253 , H01L23/3171 , H01L27/1214 , H01L27/1248 , H01L27/322 , H01L27/3244 , H01L27/3258 , H01L29/78621 , H01L51/529 , H01L51/56 , H01L2924/0002 , Y10S428/917 , H01L2924/00
摘要： An object of the present invention is to provide an EL display device, which has a high operating performance and reliability.A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.

69. 发明授权

US08421135B2 Semiconductor device, and manufacturing method thereof 有权
公开(公告)号：US08421135B2
公开(公告)日：2013-04-16
申请号：US12323724
申请日：2008-11-26
申请人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
IPC分类号： H01L31/062
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/13458 , H01L27/124 , H01L27/156 , H01L29/6675 , H01L29/66765
摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.

70. 发明授权

US08400187B2 Logic circuit and semiconductor device 有权
标题翻译：逻辑电路和半导体器件
公开(公告)号：US08400187B2
公开(公告)日：2013-03-19
申请号：US12901057
申请日：2010-10-08
申请人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L25/00 , H03K19/094 , H03B1/00
CPC分类号： H01L29/7869 , H01L22/34 , H01L27/0207 , H01L27/1225 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.
摘要翻译：逻辑电路包括具有使用氧化物半导体形成的沟道形成区域的薄膜晶体管，以及通过关闭薄膜晶体管而使端子中的一个成为浮置状态的电容器。氧化物半导体的氢浓度为5×1019（原子/ cm3）以下，因此在不产生电场的状态下基本上用作绝缘体。因此，可以减小薄膜晶体管的截止电流，从而通过薄膜晶体管抑制存储在电容器中的电荷的泄漏。因此，可以防止逻辑电路的故障。此外，可以通过减小薄膜晶体管的截止电流来降低在逻辑电路中流动的过量的电流，导致逻辑电路的低功耗。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式