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61. 外观设计

USD373446S Handcuff 失效
公开(公告)号：USD373446S
公开(公告)日：1996-09-03
申请号：US27565
申请日：1994-08-29
申请人： Gee-Sook Kim , Jung-Soo Kwan , Jong-Won Lee
设计人： Gee-Sook Kim , Jung-Soo Kwan , Jong-Won Lee

62. 发明授权

US08501523B2 Depositing titanium silicon nitride films for forming phase change memories 有权
标题翻译：沉积用于形成相变存储器的氮化钛膜
公开(公告)号：US08501523B2
公开(公告)日：2013-08-06
申请号：US10977186
申请日：2004-10-28
申请人： Jong-Won Lee , Kuo-Wei Chang , Michael L. McSwiney
发明人： Jong-Won Lee , Kuo-Wei Chang , Michael L. McSwiney
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： H01L45/06 , C23C16/34 , H01L27/2427 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/16 , H01L45/1683
摘要： Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in reasonable deposition times, in some embodiments. In one embodiment, two separate bubblers may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber so that the relative proportions of the precursors can be readily controlled.
摘要翻译：有机金属前体可用于形成用作相变存储器的加热器的氮化钛膜。通过使用TDMAT和TrDMASi的组合，例如在金属有机化学气相沉积室中，在一些实施方案中，可以在合理的沉积时间内实现相对高百分比的硅。在一个实施方案中，可以使用两个分开的起泡器将气态形式的两种有机金属化合物进料到沉积室，以便容易地控制前体的相对比例。

63. 发明授权

US08399327B2 Methods of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08399327B2
公开(公告)日：2013-03-19
申请号：US13240560
申请日：2011-09-22
申请人： Jong-Won Lee , Jae-Seok Kim , Bo-Un Yoon
发明人： Jong-Won Lee , Jae-Seok Kim , Bo-Un Yoon
IPC分类号： H01L21/336
CPC分类号： H01L21/823842 , H01L21/823437 , H01L29/165 , H01L29/66545 , H01L29/66628 , H01L29/7835
摘要： A method includes forming a plurality of dummy gate structures on a substrate, each dummy gate structure including a dummy gate electrode and a dummy gate mask, forming a first insulation layer on the substrate and the dummy gate structures to fill a first space between the dummy gate structures, planarizing upper portions of the first insulation layer and the dummy gate structures, removing the remaining first insulation layer to expose a portion of the substrate, forming an etch stop layer on the remaining dummy gate structures and the exposed portion of the substrate, forming a second insulation layer on the etch stop layer to fill a second space between the dummy gate structures, planarizing upper portions of the second insulation layer and the etch stop layer to expose the dummy gate electrodes, removing the exposed dummy gate electrodes to form trenches, and forming metal gate electrodes in the trenches.
摘要翻译：一种方法包括在衬底上形成多个虚拟栅极结构，每个虚拟栅极结构包括伪栅极电极和伪栅极掩模，在衬底上形成第一绝缘层和虚拟栅极结构以填充虚拟栅极结构之间的第一空间栅极结构，平坦化第一绝缘层和伪栅极结构的上部，去除剩余的第一绝缘层以暴露衬底的一部分，在剩余的虚设栅极结构和衬底的暴露部分上形成蚀刻停止层，在所述蚀刻停止层上形成第二绝缘层以填充所述虚拟栅极结构之间的第二空间，平坦化所述第二绝缘层的上部和所述蚀刻停止层以暴露所述伪栅电极，去除所述暴露的伪栅电极以形成沟槽并且在沟槽中形成金属栅电极。

64. 发明申请

US20120168687A1 Polypyrrole and Silver Vanadium Oxide Composite 有权
标题翻译：聚吡咯和银氧化钒复合材料
公开(公告)号：US20120168687A1
公开(公告)日：2012-07-05
申请号：US13411976
申请日：2012-03-05
申请人： Branko N. Popov , Jong-Won Lee
发明人： Branko N. Popov , Jong-Won Lee
IPC分类号： H01B1/08 , H01B1/04
CPC分类号： H01M4/54 , H01M4/06 , H01M4/364 , H01M4/382 , H01M4/60 , H01M4/606 , H01M6/16
摘要： In one embodiment of the present disclosure, a composite electrode for a battery is provided. The composite electrode includes silver vanadium oxide present in an amount from about 75 weight percent to about 99 weight percent and polypyrrole present in an amount from about 1 weight percent to about 25 weight percent.
摘要翻译：在本公开的一个实施例中，提供了一种用于电池的复合电极。复合电极包括以约75重量％至约99重量％的量存在的银钒氧化物，并且存在量为约1重量％至约25重量％的聚吡咯。

65. 发明申请

US20120074595A1 SEMICONDUCTOR PACKAGE 审中-公开
标题翻译：半导体封装
公开(公告)号：US20120074595A1
公开(公告)日：2012-03-29
申请号：US13191843
申请日：2011-07-27
申请人： JeongOh Ha , Heungkyu Kwon , YunSeok Choi , Jong-Won Lee
发明人： JeongOh Ha , Heungkyu Kwon , YunSeok Choi , Jong-Won Lee
IPC分类号： H01L23/522
CPC分类号： H01L25/105 , H01L23/5386 , H01L24/48 , H01L24/73 , H01L2224/16225 , H01L2224/32225 , H01L2224/48225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package includes a first substrate on which a first semiconductor chip is mounted, a second substrate spaced apart from the first substrate and on which a second semiconductor chip is mounted, first pads disposed on the first substrate, second pads disposed on the second substrate to be opposite to the first pads, and connection patterns electrically connecting the opposite first and second pads to each other, respectively. The first pads are disposed asymmetrically with respect to the central axis of the first substrate.
摘要翻译：半导体封装包括：第一衬底，其上安装有第一半导体芯片;第二衬底，与第一衬底间隔开并且安装有第二半导体芯片;第一焊盘，设置在第一衬底上;第二焊盘，设置在第二衬底上; 与第一焊盘相对，以及将相对的第一焊盘和第二焊盘彼此电连接的连接图案。第一衬垫相对于第一衬底的中心轴非对称地设置。

66. 发明授权

US08133611B2 Method of making polypyrrole and silver vanadium oxide composite 有权
标题翻译：制备聚吡咯和银钒氧化物复合材料的方法
公开(公告)号：US08133611B2
公开(公告)日：2012-03-13
申请号：US12090292
申请日：2006-10-17
申请人： Branko N. Popov , Jong-Won Lee
发明人： Branko N. Popov , Jong-Won Lee
IPC分类号： H01M4/04 , H01B1/12
CPC分类号： H01M4/54 , H01M4/06 , H01M4/364 , H01M4/382 , H01M4/60 , H01M4/606 , H01M6/16
摘要： In one embodiment of the present disclosure, a composite electrode for a battery is provided. The composite electrode includes silver vanadium oxide present in an amount from about 75 weight percent to about 99 weight percent and polypyrrole present in an amount from about 1 weight percent to about 25 weight percent.
摘要翻译：在本公开的一个实施例中，提供了一种用于电池的复合电极。复合电极包括以约75重量％至约99重量％的量存在的银钒氧化物，并且存在量为约1重量％至约25重量％的聚吡咯。

67. 发明授权

US08124526B2 Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same 失效
标题翻译：形成薄铁电体层的方法和制造其的半导体器件的制造方法
公开(公告)号：US08124526B2
公开(公告)日：2012-02-28
申请号：US12503440
申请日：2009-07-15
申请人： Suk-Hun Choi , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon
发明人： Suk-Hun Choi , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon
IPC分类号： H01L21/4763
CPC分类号： H01L27/11507 , H01L21/3105 , H01L21/31053 , H01L28/55
摘要： In methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device, a preliminary ferroelectric layer is formed on a substrate by depositing a metal oxide including lead, zirconium and titanium. The surface of the preliminary ferroelectric layer is polished using a slurry composition including an acrylic acid polymer, abrasive particles, and water to form a thin ferroelectric layer on the substrate. The slurry composition may reduce a polishing rate of the preliminary ferroelectric layer such that removal of a bulk portion of the preliminary ferroelectric layer may be suppressed and the surface roughness of the preliminary ferroelectric layer may be improved.
摘要翻译：在形成薄铁电体层的方法和制造半导体器件的方法中，通过沉积包括铅，锆和钛的金属氧化物，在衬底上形成初步铁电层。使用包括丙烯酸聚合物，磨料颗粒和水的浆料组合物对预制铁电层的表面进行抛光，以在基材上形成薄铁电层。浆料组合物可以降低预备铁电体层的抛光速率，从而可以抑制初级铁电层的体积部分的去除，并且可以提高预铁电层的表面粗糙度。

68. 发明申请

US20100267436A1 METHOD AND SYSTEM FOR OPERATING ONLINE 8-DIRECTION BATTLE GAME USING PERSONAL COMPUTER 有权
标题翻译：使用个人计算机操作在线8方向电击游戏的方法和系统
公开(公告)号：US20100267436A1
公开(公告)日：2010-10-21
申请号：US12760722
申请日：2010-04-15
申请人： Jong-Won Lee
发明人： Jong-Won Lee
IPC分类号： A63F9/24
CPC分类号： A63F13/422 , A63F13/833 , A63F2300/407 , A63F2300/6054 , A63F2300/8029
摘要： A method and system for operating an online 8-direction battle game using a personal computer (PC) are provided. The system operates the 8-direction battle game through interfacing with a game providing module to provide the 8-direction battle game in an online mode with a PC. The system includes an auto-targeting unit to automatically target an object to perform a battle against a character designated by a user of the PC in the 8-direction battle game, the object being within a predetermined range from a position of the character, and a game controller to automatically control a direction in which the character faces the object based on a distance between the object and the character.
摘要翻译：提供了一种使用个人计算机（PC）操作在线8方向战斗游戏的方法和系统。该系统通过与游戏提供模块的接口操作8方向战斗游戏，以PC在线模式提供8方向战斗游戏。该系统包括自动定位单元，用于自动对象，以在与8个方向的战斗游戏中的PC的用户指定的角色进行对抗，该对象位于从角色位置的预定范围内，以及游戏控制器，用于基于对象和角色之间的距离来自动控制角色面向对象的方向。

69. 发明授权

US07760581B2 Active driver control circuit for semiconductor memory apparatus 失效
标题翻译：半导体存储装置的主动驱动控制电路
公开(公告)号：US07760581B2
公开(公告)日：2010-07-20
申请号：US11963035
申请日：2007-12-21
申请人： Jong-Won Lee
发明人： Jong-Won Lee
IPC分类号： G11C8/00
CPC分类号： G11C8/18 , G11C7/22 , G11C8/08
摘要： An active driver control circuit for a semiconductor memory apparatus includes an asynchronous decoding unit that can be activated in response to a bank selection signal, when an external command is a read or write command, can generate an enabled read/write enable signal, and when a precharge signal is enabled, disable the enabled read/write enable signal, a synchronous decoding unit that can be activated in response to the bank selection signal, can generate an enabled active enable signal when the external command is an active command, when the external command is a precharge command, can generate the precharge signal, and output the active enable signal and the precharge signal in synchronization with a clock, and an active driver control signal generating unit that can generate an active driver control signal in response to the active enable signal and the read/write enable signal.
摘要翻译：一种用于半导体存储装置的有源驱动器控制电路包括：异步解码单元，其可以响应于存储体选择信号被激活，当外部命令是读或写命令时，可以产生使能的读/写使能信号，并且当启用预充电信号，禁用启用的读/写使能信号，当外部命令为活动命令时，可以响应于存储体选择信号激活的同步解码单元可以产生使能的有效使能信号，当外部命令是预充电命令，可以产生预充电信号，并且与时钟同步地输出有源使能信号和预充电信号;以及主动驱动器控制信号生成单元，其可以响应于主动使能而产生主动驱动器控制信号信号和读/写使能信号。

70. 发明申请

US20090011599A1 SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：用于选择性地氧化硅氧化物的硅酸盐组合物，用于抛光氮化硅层的方法和使用其制造半导体器件的方法
公开(公告)号：US20090011599A1
公开(公告)日：2009-01-08
申请号：US12167781
申请日：2008-07-03
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , H01L29/66583 , H01L29/66795 , H01L29/7851
摘要： Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.
摘要翻译：提供了相对于氧化硅选择性研磨氮化硅的浆料组合物，研磨氮化硅层的方法和使用其制造半导体器件的方法。浆料组合物包括用于降低氧化物抛光速率的第一试剂，磨料颗粒和水，并且第一试剂包括聚（丙烯酸）。浆料组合物可以具有相对于氧化硅的氮化硅相对于在半导体制造工艺中选择性研磨氮化硅层的高抛光选择性。

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