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61. 发明授权

US08207610B2 Semiconductor device having a multilayer interconnection structure 有权
标题翻译：具有多层互连结构的半导体器件
公开(公告)号：US08207610B2
公开(公告)日：2012-06-26
申请号：US11868102
申请日：2007-11-14
申请人： Kenichi Watanabe , Tomoji Nakamura , Satoshi Otsuka
发明人： Kenichi Watanabe , Tomoji Nakamura , Satoshi Otsuka
IPC分类号： H01L29/40
CPC分类号： H01L23/481 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A structure device having a multilayer interconnection structure; such a structure includes at least a first interconnection layer and a second interconnection layer; the first interconnection layer includes a first conductor pattern embedded in a first interlayer insulation film and a second conductor pattern embedded in said first interlayer insulation film; the second interconnection layer includes a third conductor pattern embedded in a second interlayer insulation film; the third conductor pattern being coupled to an extension part in a part thereof so as to extend in said second interlayer insulation film in a plane of said second interlayer insulation film; the extension part of said third conductor pattern, said first via-plug and said second viaplug forming help form a dual damascene structure.
摘要翻译：一种具有多层互连结构的结构装置; 这种结构至少包括第一互连层和第二互连层; 第一互连层包括嵌入在第一层间绝缘膜中的第一导体图案和嵌入所述第一层间绝缘膜中的第二导体图案; 第二互连层包括嵌入第二层间绝缘膜中的第三导体图案; 所述第三导体图案在其一部分中被连接到延伸部分，以在所述第二层间绝缘膜中在所述第二层间绝缘膜的平面中延伸; 所述第三导体图案的延伸部分，所述第一通孔插头和所述第二插销形成帮助形成双镶嵌结构。

62. 发明授权

US08121666B2 Image observation apparatus 有权
标题翻译：图像观察装置
公开(公告)号：US08121666B2
公开(公告)日：2012-02-21
申请号：US11190615
申请日：2005-07-27
申请人： Satoshi Otsuka , Takashi Fukaya , Junichi Nozawa , Tomonori Ishikawa
发明人： Satoshi Otsuka , Takashi Fukaya , Junichi Nozawa , Tomonori Ishikawa
IPC分类号： A61B5/05 , F16M1/00 , F16M13/00
CPC分类号： F16M11/28 , A61B90/37 , A61B90/50 , A61B2090/372 , F16M11/10 , F16M11/2014 , F16M11/2021 , F16M11/2092 , F16M11/42 , F16M2200/048 , G02B7/001 , G02B27/0149
摘要： An image observation apparatus comprising an image display unit for displaying an observation image and a supporting mechanism for supporting the image display unit movably and adjustably in the directions of three, substantially perpendicular axes. Since the supporting mechanism of this image observation apparatus can move and adjust the image display unit in three orthogonal axial directions, an operator need not select a plurality of articulates for operating them when he/she wants to move the image display unit to a desired axial direction. Further, one of the three axes can be a rotational axis for turnably supporting the image display unit around the operator. According to this configuration, the image display unit can be independently moved and adjusted in three axial directions, while the observation angle of the observer with respect to the display face of the image display unit is kept constant.
摘要翻译：一种图像观察装置，包括用于显示观察图像的图像显示单元和用于以三个基本上垂直的轴线可移动地和可调节地支撑图像显示单元的支撑机构。由于该图像观察装置的支撑机构能够在三个正交的轴向方向上移动和调整图像显示单元，所以当他/她想要将图像显示单元移动到期望的轴向时，操作者不需要选择多个用于操作它们的关节方向。此外，三个轴中的一个可以是用于可转动地支撑操作者周围的图像显示单元的旋转轴。根据该结构，图像显示单元可以在三个轴向独立地移动和调整，而观察者相对于图像显示单元的显示面的观察角度保持恒定。

63. 发明申请

US20110121460A1 SEMICONDUCTOR DEVICE HAVING A MULTILAYER INTERCONNECTION STRUCTURE 有权
标题翻译：具有多层互连结构的半导体器件
公开(公告)号：US20110121460A1
公开(公告)日：2011-05-26
申请号：US13015594
申请日：2011-01-28
申请人： Kenichi WATANABE , Tomoji Nakamura , Satoshi Otsuka
发明人： Kenichi WATANABE , Tomoji Nakamura , Satoshi Otsuka
IPC分类号： H01L23/52
CPC分类号： H01L23/481 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a multilayer interconnection structure, wherein the multilayer interconnection structure comprises at least a first interconnection layer and a second interconnection layer formed over the first interconnection layer, the first interconnection layer comprises a first conductor pattern embedded in a first interlayer insulation film and constituting a part of an interconnection pattern and a second, another interconnection pattern embedded in the first interlayer insulation film, the second interconnection layer comprises a third conductor pattern embedded in a second interlayer insulation film and constituting a part of said interconnection pattern, the third conductor pattern has an extension part in a part thereof so as to extend in a layer identical to the third conductor pattern, the third conductor pattern being electrically connected to the first conductor pattern at a first region of the extension part via a first via plug, the extension part making a contact with the second conductor pattern at a second region further away from, or closer to the third conductor pattern with regard to the first region via a second via-plug of a diameter smaller than the first via-plug, the extension part of the third conductor pattern, the first via-plug and the second via-plug form, together with the second interlayer insulation film, a dual damascene structure.
摘要翻译：半导体器件具有多层互连结构，其中所述多层互连结构至少包括形成在所述第一互连层上的第一互连层和第二互连层，所述第一互连层包括嵌入在第一层间绝缘膜中的第一导体图案，构成互连图案的一部分和嵌入第一层间绝缘膜中的第二另一互连图案，第二互连层包括嵌入第二层间绝缘膜中并构成所述互连图案的一部分的第三导体图案，第三导体图案的一部分具有延伸部分，以在与第三导体图案相同的层中延伸，第三导体图案经由第一通孔插头在延伸部分的第一区域处电连接到第一导体图案，扩展部分制作ac 通过直径小于第一通孔插头的第二通孔插头，在相对于第一区域进一步远离或接近第三导体图案的第二区域处与第二导体图案接合，第三导体图案的延伸部分导体图案，第一通孔塞和第二通孔塞形式与第二层间绝缘膜一起是双镶嵌结构。

64. 发明授权

US07495309B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07495309B2
公开(公告)日：2009-02-24
申请号：US10224434
申请日：2002-08-21
申请人： Motonobu Sato , Hiroshi Nakadai , Toyoji Sawada , Satoshi Otsuka , Masayuki Nakada
发明人： Motonobu Sato , Hiroshi Nakadai , Toyoji Sawada , Satoshi Otsuka , Masayuki Nakada
IPC分类号： H01L29/93
CPC分类号： H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A redundant fuse is provided with a redundant length, here a winding structure, at one end thereof, here at a vicinity of a second wire side to which a high voltage (Vcc) is impressed. A disconnected portion is provided between the other end side of the redundant fuse, here a second wire side which is on the ground potential (GND) and the winding structure.
摘要翻译：冗余保险丝具有冗余长度，这里是一个绕组结构，在其一端，这里是施加高电压（Vcc）的第二导线侧的附近。在冗余保险丝的另一端之间设置断开部分，这里是接地电位（GND）的第二线侧和绕组结构。

65. 发明授权

US07189246B2 Medical instrument holding device 有权
标题翻译：医疗器械夹持装置
公开(公告)号：US07189246B2
公开(公告)日：2007-03-13
申请号：US10758646
申请日：2004-01-14
申请人： Satoshi Otsuka , Masaaki Ueda
发明人： Satoshi Otsuka , Masaaki Ueda
IPC分类号： A61B19/00 , A61B1/04
CPC分类号： A61B50/20 , A61B1/00149 , A61B90/50 , A61B2090/504 , A61B2090/506
摘要： A medical instrument holding device includes a grasping portion onto which a medical instrument is mounted, an acceptant arm supported by a link mechanism, and a ball joint element adapted to be fixed to and released from the acceptant arm. The grasping portion is connected to the acceptant arm by the ball joint element arranged above or below the longitudinal axis of the acceptant arm. A total weight of the grasping portion is always balanced so as to apply to the acceptant arm (ball joint element) so that an operator can move the grasping portion under the condition that no total weight is applied to the operator.
摘要翻译：医疗器具保持装置包括：安装有医疗器械的把持部，由连杆机构支撑的接受臂，以及适于固定在受话臂上并从接受臂释放的球窝接头元件。把持部分通过设置在接受臂的纵向轴线上方或下方的球形接头元件连接到接受臂上。抓握部的总重量总是平衡，以便施加到接受臂（球形接头元件），使得操作者可以在不对操作者施加总重量的条件下移动抓握部。

66. 发明授权

US07167702B2 Portable telephone set and communication inquiring method for portable telephone set 有权
标题翻译：便携式电话机的便携式电话机和通信查询方法
公开(公告)号：US07167702B2
公开(公告)日：2007-01-23
申请号：US10383181
申请日：2003-03-06
申请人： Satoshi Otsuka
发明人： Satoshi Otsuka
IPC分类号： H04M11/10
CPC分类号： H04L51/24 , H04L51/38 , H04M1/6505 , H04M1/72547 , H04W4/12
摘要： The present invention provides a portable telephone set and a communication inquiring method wherein an inquiry regarding a telephone answering service and an inquiry regarding a mail service can be executed by one operation to achieve sufficient convenience to common users. When one of an inquiring operation as to whether or not a terminated telephone answering service call by the telephone answering service function is present and another inquiring operation as to whether or not a terminated mail by the mail service function is present is performed, an inquiring action corresponding to the one operation is executed first, and then an inquiring action corresponding to the other operation is automatically executed.
摘要翻译：本发明提供了一种便携式电话机和通信查询方法，其中可以通过一种操作来执行关于电话应答服务的询问和关于邮件服务的询问，以便为普通用户提供足够的便利。当进行关于通过电话应答服务功能的终止的电话应答服务呼叫是否存在的询问操作之一，并且进行关于是否存在通过邮件服务功能终止的邮件的另一查询操作时，执行询问动作对应于首先执行一个操作，然后自动执行与其他操作相对应的查询动作。

67. 发明授权

US06960833B2 Semiconductor device having multilevel copper wiring layers and its manufacture method 有权
公开(公告)号：US06960833B2
公开(公告)日：2005-11-01
申请号：US10350219
申请日：2003-01-24
申请人： Satoshi Otsuka , Shun-ichi Fukuyama
发明人： Satoshi Otsuka , Shun-ichi Fukuyama
摘要： To provide a semiconductor device having copper wiring layers and organic insulating resin layers with less separation and its manufacture method.A semiconductor device has: a semiconductor substrate formed with a number of semiconductor elements; a first interlayer insulating film formed above the semiconductor substrate and having a first wiring recess; a first copper wiring embedded in the first wiring recess; a second interlayer insulating film having a second wiring recess, the second interlayer insulating film including a copper diffusion preventing layer formed on the first copper wiring and the first interlayer insulating film, an oxide film formed on the copper diffusion preventing layer, and an organic insulating resin layer formed on the oxide film; and a second copper wiring embedded in the second wiring recess.

68. 发明申请

US20050212136A1 Multi-layer wiring structure with dummy patterns for improving surface flatness 有权
标题翻译：具有用于提高表面平坦度的虚拟图案的多层布线结构
公开(公告)号：US20050212136A1
公开(公告)日：2005-09-29
申请号：US10898167
申请日：2004-07-26
申请人： Toshiyuki Karasawa , Satoshi Otsuka
发明人： Toshiyuki Karasawa , Satoshi Otsuka
IPC分类号： H01L21/3205 , H01L21/027 , H01L21/768 , H01L21/822 , H01L23/48 , H01L23/52 , H01L23/522 , H01L27/04 , H01L29/00
CPC分类号： H01L23/5227 , H01L21/7684 , H01L2924/0002 , H01L2924/00
摘要： A first area, a ring shape second area surrounding the first area, and a third area surrounding the second area are defined on the surface of a support substrate. A first wiring layer is disposed above the support substrate. A wiring is formed in the third area, dummy patterns being formed in the second area, and conductive patterns are not formed in the first area. A functional element is disposed above the first wiring layer and in the first area.
摘要翻译：在支撑基板的表面上限定第一区域，围绕第一区域的环形第二区域和围绕第二区域的第三区域。第一布线层设置在支撑基板的上方。在第三区域中形成布线，在第二区域中形成虚设图案，并且在第一区域中不形成导电图案。功能元件设置在第一布线层上方和第一区域中。

69. 发明申请

US20050161766A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050161766A1
公开(公告)日：2005-07-28
申请号：US10872543
申请日：2004-06-22
申请人： Motonobu Sato , Toyoji Sawada , Satoshi Otsuka
发明人： Motonobu Sato , Toyoji Sawada , Satoshi Otsuka
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/82 , H01L23/00 , H01L23/31 , H01L23/525 , H01L27/10
CPC分类号： H01L27/10 , H01L23/3192 , H01L23/5258 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device comprises an inter-layer insulating film 18 formed over a substrate 10, a fuse 26 buried in the inter-layer insulating film 18, and a cover film 30 formed over the inter-layer insulating film 18 and having an opening formed therein down to the fuse 26. The inter-layer insulating film 18 is formed in contact with the side wall of the fuse 26 in the opening, whereby the fuse 26 is supported with the inter-layer insulating film 18 to thereby prevent the pattern collapse and pattern scatter. The wide scatter of the fuses can be prevented, and the fuses can be arranged in a small pitch.
摘要翻译：半导体器件包括形成在衬底10上的层间绝缘膜18，埋在层间绝缘膜18中的保险丝26和形成在层间绝缘膜18上并具有形成在其中的开口的覆盖膜30 层间绝缘膜18形成为与开口内的保险丝26的侧壁接触，由此保险丝26被层间绝缘膜18支撑，从而防止图案塌陷，图案分散。可以防止保险丝的宽散射，并且可以以小间距布置保险丝。

70. 发明授权

US06686285B2 Semiconductor device manufacture method preventing dishing and erosion during chemical mechanical polishing 有权
标题翻译：半导体器件制造方法，防止化学机械抛光过程中的凹陷和侵蚀
公开(公告)号：US06686285B2
公开(公告)日：2004-02-03
申请号：US10326378
申请日：2002-12-23
申请人： Motoshu Miyajima , Toshiyuki Karasawa , Tsutomu Hosoda , Satoshi Otsuka
发明人： Motoshu Miyajima , Toshiyuki Karasawa , Tsutomu Hosoda , Satoshi Otsuka
IPC分类号： H01L21311
CPC分类号： H01L21/3212 , H01L21/31053 , H01L21/76808 , H01L21/7684
摘要： A first insulating film is formed on an underlying substrate, the first insulating film being made of a first insulating material. A second insulating film is formed on the first insulating film, the second insulating film being made of a second insulating material different from the first insulating material. A trench is formed through the second and first insulating film, the trench reaching at least an intermediate depth of the first insulating film. A wiring layer made of a conductive material is deposited on the second insulating film, the wiring layer burying the trench. The wiring layer is polished to leave the wiring layer in the trench. The wiring layer and second insulating film are polished until the first insulating film is exposed. Irregularity such as dishing and erosion can be suppressed from being formed.
摘要翻译：第一绝缘膜形成在下面的基底上，第一绝缘膜由第一绝缘材料制成。在第一绝缘膜上形成第二绝缘膜，第二绝缘膜由与第一绝缘材料不同的第二绝缘材料制成。通过第二和第一绝缘膜形成沟槽，沟槽到达第一绝缘膜的至少中间深度。在第二绝缘膜上沉积由导电材料制成的布线层，布线层埋入沟槽。对布线层进行抛光以将沟槽中的布线层留下。布线层和第二绝缘膜被抛光直到第一绝缘膜露出。可以抑制凹陷和侵蚀等不规则形成。

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