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61. 发明申请

US20090269569A1 Low Temperature Process for Polysilazane Oxidation/Densification 有权
标题翻译：聚硅氮烷氧化/致密化的低温工艺
公开(公告)号：US20090269569A1
公开(公告)日：2009-10-29
申请号：US12497791
申请日：2009-07-06
申请人： Janos Fucsko , John A. Smythe, III , Li Li , Grady S. Waldo
发明人： Janos Fucsko , John A. Smythe, III , Li Li , Grady S. Waldo
IPC分类号： B32B27/00 , C08G77/00 , B32B15/08
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02236 , H01L21/02282 , H01L21/02343 , H01L21/3125 , H01L21/316 , H01L21/76205 , H01L21/76801 , H01L21/76802 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76832
摘要： Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.
摘要翻译：公开了利用聚硅氮烷基氧化硅层或填充物的半导体器件，结构和系统以及制造氧化物层的方法。在一个实施方案中，将聚硅氮烷溶液沉积在基底上，并在低温下经湿氧化处理臭氧，以将聚硅氮烷材料化学改性为氧化硅层。

62. 发明申请

US20090017596A1 Methods Of Forming Oxides, Methods Of Forming Semiconductor Constructions, And Methods Of Forming Isolation Regions 有权
标题翻译：形成氧化物的方法，形成半导体结构的方法和形成隔离区的方法
公开(公告)号：US20090017596A1
公开(公告)日：2009-01-15
申请号：US11774709
申请日：2007-07-09
申请人： Robert J. Hanson , Janos Fucsko
发明人： Robert J. Hanson , Janos Fucsko
IPC分类号： H01L21/76 , H01L21/31 , H01L21/311
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3125 , H01L21/31612
摘要： Some embodiments include methods of forming isolation regions in which spin-on material (for example, polysilazane) is converted to a silicon dioxide-containing composition. The conversion may utilize one or more oxygen-containing species (such as ozone) and a temperature of less than or equal to 300° C. In some embodiments, the spin-on material is formed within an opening in a semiconductor material to form a trenched isolation region. Other dielectric materials may be formed within the opening in addition to the silicon dioxide-containing composition formed from the spin-on material. Such other dielectric materials may include silicon dioxide formed by chemical vapor deposition and/or silicon dioxide formed by high-density plasma chemical vapor deposition.
摘要翻译：一些实施方案包括形成其中旋涂材料（例如，聚硅氮烷）转化为含二氧化硅的组合物的隔离区域的方法。转化可以利用一种或多种含氧物质（例如臭氧）和小于或等于300℃的温度。在一些实施方案中，旋涂材料形成在半导体材料的开口内以形成沟隔离区。除了由旋涂材料形成的含二氧化硅的组合物之外，可以在开口内形成其它电介质材料。这种其它介电材料可以包括通过化学气相沉积形成的二氧化硅和/或通过高密度等离子体化学气相沉积形成的二氧化硅。

63. 发明授权

US07316981B2 Method of removing silicon from a substrate 有权
标题翻译：从基板去除硅的方法
公开(公告)号：US07316981B2
公开(公告)日：2008-01-08
申请号：US11648272
申请日：2006-12-28
申请人： Janos Fucsko , Grady S. Waldo
发明人： Janos Fucsko , Grady S. Waldo
IPC分类号： H01L21/465
CPC分类号： H01L21/30604 , H01L21/32134 , H01L21/76224 , H01L21/763
摘要： A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditions and for a period of time effective to etch the elemental silicon from the substrate. Wet etching can be employed in methods of forming trench isolation, and in other methods. Other aspects and implementations are contemplated.
摘要翻译：从衬底去除硅的湿蚀刻方法包括在衬底上沉积包含元素形式的硅的层。将该层暴露于包含氢氧化物和氟化物的水性液体蚀刻溶液中，并且在有效地从衬底上蚀刻元素硅的条件和时间段内具有至少10的pH。可以在形成沟槽隔离的方法中采用湿式蚀刻，也可以采用其它方法。考虑了其他方面和实现。

64. 发明授权

US07273796B2 Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权
标题翻译：在集成电路的制造中形成沟槽隔离的方法和制造集成电路的方法
公开(公告)号：US07273796B2
公开(公告)日：2007-09-25
申请号：US11087218
申请日：2005-03-23
申请人： John Smythe , Li Li , Janos Fucsko
发明人： John Smythe , Li Li , Janos Fucsko
IPC分类号： H01L21/76
CPC分类号： H01L21/31055 , H01L21/02164 , H01L21/02222 , H01L21/02238 , H01L21/02255 , H01L21/02282 , H01L21/02337 , H01L21/31133 , H01L21/3125 , H01L21/76229
摘要： A method of fabricating integrated circuitry includes depositing a spin-on-dielectric over a semiconductor substrate. The spin-on-dielectric comprises a polysilazane. Only some of the polysilazane is etched from the semiconductor substrate. Such etching comprises exposure to an etching fluid comprising at least one of a) an aqueous fluid having a pH greater than 7.0, or b) a basic fluid solution. After the etching, remaining spin-on-dielectric comprising polysilazane is annealed effective to form an annealed dielectric which is different in composition from the spin-on-dielectric, and preferably having a dielectric constant k which is different from that of the initially deposited spin-on-dielectric.
摘要翻译：制造集成电路的方法包括在半导体衬底上沉积旋涂电介质。旋涂电介质包含聚硅氮烷。仅从半导体衬底蚀刻一些聚硅氮烷。这种蚀刻包括暴露于包括a）pH大于7.0的水性流体或b）碱性流体溶液中的至少一种的蚀刻流体。在蚀刻之后，包括聚硅氮烷的剩余的旋涂电介质退火有效地形成退火电介质，其组成与旋涂电介质不同，并且优选具有不同于初始沉积旋转的介电常数k - 电介质。

65. 发明申请

US20070045769A1 Semiconductor constructions, memory arrays, electronic systems, and methods of forming semiconductor constructions 有权
标题翻译：半导体结构，存储阵列，电子系统和形成半导体结构的方法
公开(公告)号：US20070045769A1
公开(公告)日：2007-03-01
申请号：US11218231
申请日：2005-09-01
申请人： Zailong Bian , Janos Fucsko
发明人： Zailong Bian , Janos Fucsko
IPC分类号： H01L29/00
CPC分类号： H01L29/0649 , H01L21/762 , H01L21/764 , H01L27/1052 , H01L27/115 , H01L27/11521 , H01L29/0642 , H01L29/0653 , H01L29/78
摘要： The invention includes semiconductor constructions having trenched isolation regions. The trenches of the trenched isolation regions can include narrow bottom portions and upper wide portions over the bottom portions. Electrically insulative material can fill the upper wide portions while leaving voids within the narrow bottom portions. The trenched isolation regions can be incorporated into a memory array, and/or can be incorporated into an electronic system. The invention also includes methods of forming semiconductor constructions.
摘要翻译：本发明包括具有沟槽隔离区域的半导体结构。沟槽隔离区域的沟槽可以包括底部的窄底部部分和上部宽部分。电绝缘材料可以填充上部宽部分，同时留下狭窄底部内的空隙。沟槽隔离区域可以并入存储器阵列中，和/或可并入到电子系统中。本发明还包括形成半导体结构的方法。

66. 发明申请

US20070037401A1 Method of forming trench isolation 有权
标题翻译：形成沟槽隔离的方法
公开(公告)号：US20070037401A1
公开(公告)日：2007-02-15
申请号：US11583633
申请日：2006-10-18
申请人： Janos Fucsko , Grady Waldo
发明人： Janos Fucsko , Grady Waldo
IPC分类号： H01L21/302
CPC分类号： H01L21/30604 , H01L21/32134 , H01L21/76224 , H01L21/763
摘要： A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditions and for a period of time effective to etch the elemental silicon from the substrate. Wet etching can be employed in methods of forming trench isolation, and in other methods. Other aspects and implementations are contemplated.
摘要翻译：从衬底去除硅的湿蚀刻方法包括在衬底上沉积包含元素形式的硅的层。将该层暴露于包含氢氧化物和氟化物的水性液体蚀刻溶液中，并且在有效地从衬底上蚀刻元素硅的条件和时间段内具有至少10的pH。可以在形成沟槽隔离的方法中采用湿式蚀刻，也可以采用其它方法。考虑了其他方面和实现。

67. 发明申请

US20070023396A1 Etch compositions and methods of processing a substrate 失效
标题翻译：蚀刻组合物和处理基材的方法
公开(公告)号：US20070023396A1
公开(公告)日：2007-02-01
申请号：US11191685
申请日：2005-07-27
申请人： Janos Fucsko , Grady Waldo , Joseph Wiggins , Prashant Raghu
发明人： Janos Fucsko , Grady Waldo , Joseph Wiggins , Prashant Raghu
IPC分类号： C09K13/00 , B44C1/22 , C03C15/00
CPC分类号： C03C15/00 , C09K13/08
摘要： The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.
摘要翻译：本发明包括含有异丙醇和HF，NH 4 F和四甲基氟化铵（TMAF）中的一种或多种的蚀刻剂组合物。本发明包括一种处理衬底的方法。提供了具有包含多晶硅，单晶硅和非晶硅中的至少一种的第一材料和第二材料的衬底。将衬底暴露于包含异丙醇和HF，NH 4 F和TMAF中的至少一种的蚀刻组合物。本发明包括一种处理半导体结构的方法，包括提供沿电容器电极材料的至少一部分具有电容器电极材料和氧化物材料的结构。使用包含异丙醇的蚀刻剂组合物通过各向同性蚀刻除去至少一些氧化物材料。

68. 发明申请

US20060258169A1 Methods of etching oxide, reducing roughness, and forming capacitor constructions 有权
标题翻译：蚀刻氧化物，减少粗糙度和形成电容器结构的方法
公开(公告)号：US20060258169A1
公开(公告)日：2006-11-16
申请号：US11127944
申请日：2005-05-11
申请人： Niraj Rana , Kevin Shea , Janos Fucsko
发明人： Niraj Rana , Kevin Shea , Janos Fucsko
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , C11D7/265 , C11D11/0047 , H01L21/02063 , H01L21/31116 , H01L27/0629 , H01L28/40 , Y10S438/963
摘要： The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10−6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.
摘要翻译：本发明包括其中在蚀刻氧化物（例如二氧化硅或掺杂的二氧化硅）期间使用具有至少1×10 -6的水性酸解离常数的羧酸的一种或多种组分的方法，。可以使用两种或更多种羧酸。示例性的羧酸包括三氯乙酸，马来酸和柠檬酸。

69. 发明申请

US20060216906A1 Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权
标题翻译：在集成电路的制造中形成沟槽隔离的方法和制造集成电路的方法
公开(公告)号：US20060216906A1
公开(公告)日：2006-09-28
申请号：US11087218
申请日：2005-03-23
申请人： John Smythe , Li Li , Janos Fucsko
发明人： John Smythe , Li Li , Janos Fucsko
IPC分类号： H01L21/76
CPC分类号： H01L21/31055 , H01L21/02164 , H01L21/02222 , H01L21/02238 , H01L21/02255 , H01L21/02282 , H01L21/02337 , H01L21/31133 , H01L21/3125 , H01L21/76229
摘要： A method of fabricating integrated circuitry includes depositing a spin-on-dielectric over a semiconductor substrate. The spin-on-dielectric comprises a polysilazane. Only some of the polysilazane is etched from the semiconductor substrate. Such etching comprises exposure to an etching fluid comprising at least one of a) an aqueous fluid having a pH greater than 7.0, or b) a basic fluid solution. After the etching, remaining spin-on-dielectric comprising polysilazane is annealed effective to form an annealed dielectric which is different in composition from the spin-on-dielectric, and preferably having a dielectric constant k which is different from that of the initially deposited spin-on-dielectric.
摘要翻译：制造集成电路的方法包括在半导体衬底上沉积旋涂电介质。旋涂电介质包含聚硅氮烷。仅从半导体衬底蚀刻一些聚硅氮烷。这种蚀刻包括暴露于包括a）pH大于7.0的水性流体或b）碱性流体溶液中的至少一种的蚀刻流体。在蚀刻之后，包含聚硅氮烷的剩余的旋涂电介质退火有效地形成退火电介质，其组成与旋涂电介质不同，并且优选具有与初始沉积的旋转不同的介电常数k - 电介质。

70. 发明申请

US20060003596A1 Low temperature process for polysilazane oxidation/densification 有权
公开(公告)号：US20060003596A1
公开(公告)日：2006-01-05
申请号：US10883191
申请日：2004-07-01
申请人： Janos Fucsko , John Smythe , Li Li , Grady Waldo
发明人： Janos Fucsko , John Smythe , Li Li , Grady Waldo
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02236 , H01L21/02282 , H01L21/02343 , H01L21/3125 , H01L21/316 , H01L21/76205 , H01L21/76801 , H01L21/76802 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76832
摘要： Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.

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