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61. 发明授权

US08896026B2 Semicondutor device 有权
标题翻译：半导体器件
公开(公告)号：US08896026B2
公开(公告)日：2014-11-25
申请号：US13137311
申请日：2011-08-04
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L31/072 , H01L31/109
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/475 , H01L29/66462
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法。

62. 发明授权

US08841704B2 Nitride based semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08841704B2
公开(公告)日：2014-09-23
申请号：US13406123
申请日：2012-02-27
申请人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
发明人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
IPC分类号： H01L29/66
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787
摘要： Disclosed herein is a nitride based semiconductor device, including: a substrate; a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer on the substrate; an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; and drain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer. According to preferred embodiments of the present invention, in the nitride based semiconductor device, by using the isolation area including the interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer, problems of parasitic capacitance and leakage current are solved, and as a result, a switching speed can be improved through a gate pad.
摘要翻译：本文公开了一种氮化物基半导体器件，包括：衬底; 在衬底上具有下氮化物基半导体层和上部氮化物基半导体层的氮化物基半导体层; 隔离区域，包括下部氮化物基半导体层和上部氮化物基半导体层之间的界面; 以及形成在上部氮化物基半导体层上的漏电极，源电极和栅电极。根据本发明的优选实施例，在基于氮化物的半导体器件中，通过使用包括下部氮化物基半导体层和上部氮化物类半导体层之间的界面的隔离区域，解决寄生电容和漏电流的问题，结果，可以通过栅极焊盘改善切换速度。

63. 发明授权

US08716754B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08716754B2
公开(公告)日：2014-05-06
申请号：US13429148
申请日：2012-03-23
申请人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
发明人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
IPC分类号： H01L31/072
CPC分类号： H01L29/42316 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： The present invention relates to a nitride semiconductor device One aspect of the present invention provides a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes; an n-type nitride layer formed on the p-type nitride layer; and a gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers.
摘要翻译：本发明涉及氮化物半导体器件本发明的一个方面提供一种氮化物半导体器件，其包括：具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的源电极; 与氮化物半导体层欧姆接触的漏电极; 形成在所述源极和漏极之间的所述氮化物半导体层上的p型氮化物层; 形成在p型氮化物层上的n型氮化物层; 以及形成在源电极和漏电极之间的栅电极，以接近源电极并与n型氮化物层接触，使得源侧侧壁与p型和n型源极侧的侧壁对准型氮化物层。

64. 发明授权

US08637902B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08637902B2
公开(公告)日：2014-01-28
申请号：US12907653
申请日：2010-10-19
申请人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/737 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41725 , H01L29/66462
摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.
摘要翻译：提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

65. 发明申请

US20140005797A1 THREE-DIMENSIONAL POROUS SCAFFOLD AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：三维多孔切片及其制造方法
公开(公告)号：US20140005797A1
公开(公告)日：2014-01-02
申请号：US13984431
申请日：2012-03-15
申请人： Young Hwan Park , Jung Nam Im , Tae Hee Kim , Jae Hoon Ko , Sung Jin Kim
发明人： Young Hwan Park , Jung Nam Im , Tae Hee Kim , Jae Hoon Ko , Sung Jin Kim
IPC分类号： A61L27/56 , A61L27/58
CPC分类号： A61L27/56 , A61L27/18 , A61L27/54 , A61L27/58 , D01F6/625 , C08L67/04
摘要： A three-dimensional porous scaffold and a preparation method thereof. The three-dimensional porous scaffold comprises a biodegradable multifilament draw-textured yarn on the inside of a tubular knitted fabric made of a biodegradable polymer. The three-dimensional porous scaffold has a porosity formed by the network mesh structure of the tubular knitted fabric and the 10-150 μm pores formed in the biodegradable multifilament draw-textured yarn, while it has a bulkiness of 150-1000% due to the biodegradable multifilament drawn textured yarn inserted in the tubular knitted fabric. Thus, the scaffold has a high degree of interconnection between pores, so that cell culture, cell delivery or drug delivery on the stable three-dimensional scaffold structure is performed in an optimized manner.
摘要翻译：一种三维多孔支架及其制备方法。三维多孔支架包括由可生物降解的聚合物制成的管状针织物的内部的可生物降解的复丝拉伸加工纱线。三维多孔支架具有通过管状针织物的网状网状结构形成的孔隙和在可生物降解的复丝拉伸变形纱线中形成的10-150个毛孔，而由于其具有150-1000％的蓬松度可生物降解的复丝拉丝变形丝插入管状针织物中。因此，支架在孔之间具有高度的互连，使得稳定的三维支架结构上的细胞培养，细胞递送或药物递送以优化的方式进行。

66. 再颁专利

USRE44674E1 Drum type washing machine 有权
公开(公告)号：USRE44674E1
公开(公告)日：2013-12-31
申请号：US13116077
申请日：2011-05-26
申请人： Na Eun Kim , Jin Woong Kim , Young Hwan Park , Jae Won Chang
发明人： Na Eun Kim , Jin Woong Kim , Young Hwan Park , Jae Won Chang
IPC分类号： D06F37/22
CPC分类号： D06F37/22
摘要： A drum type washing machine is provided, in which vibration is efficiently attenuated, by a maximum capacity within a size-fixed cabinet is provided, and by which a user does not bend over or sit down to load laundry into the washing machine. The drum type washing machine includes a cabinet forming an exterior of the drum type washing machine, a tub fixed within the cabinet, the tub having a laundry loading entrance at an outer circumference of the tub, a drum rotatably provided within the tub, the drum having an opening on a lateral side of the drum to communicate with the laundry loading entrance of the tub, a motor assembly provided next to one side of the drum to rotate the drum, and a suspension assembly provided to support a weight of the drum and attenuate vibration of the drum.

67. 发明申请

US20130146888A1 MONOLITHIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：单片半导体器件及其制造方法
公开(公告)号：US20130146888A1
公开(公告)日：2013-06-13
申请号：US13402692
申请日：2012-02-22
申请人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
发明人： Young Hwan Park , Woo Chul Jeon , Ki Yeol Park , Seok Yoon Hong
IPC分类号： H01L29/10
CPC分类号： H01L27/088 , H01L21/8258 , H01L27/0605 , H01L29/267 , H01L29/778 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a monolithic semiconductor device including: a substrate; a high electron mobility transistor (HEMT) structure that is a first device structure formed on the substrate; and a laterally diffused metal oxide field effect transistor (LDMOSFET) structure that is a second device structure formed to be connected with the HEMT structure on the substrate.The monolithic semiconductor device according to preferred embodiments of the present invention is a device having characteristics of a normally-off device while maintaining high current characteristics in a normally-on state, thereby improving high current and high voltage operation characteristics.
摘要翻译：本文公开了一种单片半导体器件，包括：衬底; 作为形成在基板上的第一器件结构的高电子迁移率晶体管（HEMT）结构; 以及横向扩散的金属氧化物场效应晶体管（LDMOSFET）结构，其是形成为与衬底上的HEMT结构连接的第二器件结构。根据本发明的优选实施例的单片半导体器件是具有常闭设备，同时在常开状态下保持高电流特性，从而改善高电流和高电压操作特性。

68. 发明授权

US08384130B2 Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel 有权
标题翻译：具有二维电子气（2DEG）通道的氮化物半导体器件
公开(公告)号：US08384130B2
公开(公告)日：2013-02-26
申请号：US13137291
申请日：2011-08-03
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/739 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66431 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 源极与漏极间隔开，与氮化物半导体层肖特基接触，并且具有与内部的氮化物半导体层欧姆接触的欧姆图案; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法。

69. 发明授权

US08338771B2 Apparatus for tracking and condensing sunlight of sliding type 有权
标题翻译：用于跟踪和冷凝滑动型太阳光的装置
公开(公告)号：US08338771B2
公开(公告)日：2012-12-25
申请号：US12940851
申请日：2010-11-05
申请人： Young Hwan Park
发明人： Young Hwan Park
IPC分类号： H01L31/052 , G01C21/02
CPC分类号： A01G9/243 , F24S30/425 , F24S40/20 , F24S2030/131 , F24S2030/136 , F24S2030/14 , H02S20/10 , H02S20/23 , H02S20/32 , H02S40/425 , Y02A40/266 , Y02B10/12 , Y02B10/20 , Y02E10/47 , Y02P60/124
摘要： There is provided an apparatus for tracking and condensing sunlight of a sliding type which tracks a direction of sunlight according to variations of an altitude or orbit of the sun pivots a solar module plate to maximize condensing efficiency, and strengthens a fixing structure on an inclined ground or inclined building surface by suing a frame structure on the bottom without using a concrete base harmful to natural environment.
摘要翻译：提供了一种用于跟踪和冷凝滑动型太阳光的装置，其根据太阳高度或轨道的变化跟踪太阳光的方向，使太阳能组件板枢转以最大化冷凝效率，并且增强倾斜地面上的固定结构或倾斜的建筑物表面，通过在底部起吊框架结构，而不使用对自然环境有害的混凝土基础。

70. 发明授权

US08319309B2 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08319309B2
公开(公告)日：2012-11-27
申请号：US12654936
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L27/095
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/475 , H01L29/66212 , H01L29/7787
摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.
摘要翻译：本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在其中形成的二维电子气体（2DEG）; 设置在所述半导体层的中心区域上的第一欧姆电极; 形成在所述半导体层的边缘区域上的第二欧姆电极，以与所述第一欧姆电极间隔开的方式设置，并且具有环绕所述第一欧姆电极的环形形状; 以及形成在中心区域上以覆盖第一欧姆电极并形成为与第二欧姆电极间隔开的肖特基电极部分。

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