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61. 发明授权

US07473700B2 1,2,4-triazole derivatives, processes for the preparation thereof, and pharmaceutical compositions containing the same 失效
标题翻译： 1,2,4-三唑衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US07473700B2
公开(公告)日：2009-01-06
申请号：US10536408
申请日：2003-11-26
申请人： Il Hwan Cho , Dong Hyun Ko , Myeong Yun Chae , In Ki Min , Young Hoon Kim , Kyu Jeong Yeon , Jong Hoon Kim , Sung Hak Jung , Sang Wook Park , Il Hwan Kim , Hyung Chul Ryu , Ji Young Noh , Hyun Jung Park , Jie Eun Park , Young Mee Chung
发明人： Il Hwan Cho , Dong Hyun Ko , Myeong Yun Chae , In Ki Min , Young Hoon Kim , Kyu Jeong Yeon , Jong Hoon Kim , Sung Hak Jung , Sang Wook Park , Il Hwan Kim , Hyung Chul Ryu , Ji Young Noh , Hyun Jung Park , Jie Eun Park , Young Mee Chung
IPC分类号： A61K31/41 , C07D249/08
CPC分类号： C07D249/12 , C07D249/10
摘要： A 1,2,4-triazole derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided.
摘要翻译：提供式1的1,2,4-三唑衍生物或其无毒盐，其制备方法和含有该衍生物或盐作为有效成分的药物组合物。

62. 发明授权

US07230010B2 1,2,4-triazole derivative, method for preparing the same, and pharmaceutical composition containing the same 有权
标题翻译： 1,2,4-三唑衍生物，其制备方法和含有该组合物的药物组合物
公开(公告)号：US07230010B2
公开(公告)日：2007-06-12
申请号：US10633083
申请日：2003-08-01
申请人： Il Hwan Cho , Dong Hyun Ko , Myeong Yun Chae , Taerho Kim , Kyoung Rae Kang , Jong Hoon Kim , Sung Hak Jung , Sang Wook Park , Hyung Ok Chun , Hyung Chul Ryu , Ji Young Noh , Hyun Jung Park , Jie Eun Park , Young Mee Chung
发明人： Il Hwan Cho , Dong Hyun Ko , Myeong Yun Chae , Taerho Kim , Kyoung Rae Kang , Jong Hoon Kim , Sung Hak Jung , Sang Wook Park , Hyung Ok Chun , Hyung Chul Ryu , Ji Young Noh , Hyun Jung Park , Jie Eun Park , Young Mee Chung
IPC分类号： A61K31/47 , A61K31/41 , C07D215/06 , C07D249/08
CPC分类号： C07D249/08 , C07D401/04 , C07D403/04 , C07D405/04
摘要： A 1,2,4-triazole derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided: wherein:R1 represents naphthyl, indolyl, benzofuranyl, benzothienyl, benzimidazolyl, benzothiazolyl, benzotriazolyl, benzooxazolyl, quinolinyl, or isoquinolinyl; wherein, R1 is optionally substituted at a substitutable position with one or more radicals independently selected from halogen, hydroxy, nitro, C1-C6 alkyl, C1-C6 haloalkyl, C1-C6 alkoxy, C1-C6 haloalkoxy, cyano, amino, monoalkylamino, and dialkylamino;R2 represents methyl or amino; andA, B, E, and D each independently represent carbon or nitrogen.
摘要翻译：提供式1的1,2,4-三唑衍生物或其无毒盐，其制备方法和含有该衍生物或盐作为活性成分的药物组合物：其中：R 1，苯并噻唑基，苯并咪唑基，苯并噻唑基，苯并三唑基，苯并恶唑基，喹啉基或异喹啉基; 其中R 1可以在可取代的位置任选被一个或多个独立地选自卤素，羟基，硝基，C 1 -C 6亚基的基团取代。烷基，C 1 -C 6卤代烷基，C 1 -C 6烷氧基，C 1 -C 6烷基，C 1 -C 6烷基，C 1 -C 6 - 氰基，氨基，一烷基氨基和二烷基氨基; C 1 -C 6卤代烷氧基， R 2表示甲基或氨基; A，B，E和D各自独立地表示碳或氮。

63. 发明授权

US07019144B2 1,2,4-Triazole derivative, method for preparing the same, and pharmaceutical composition containing the same 失效
标题翻译： 1,2,4-三唑衍生物，其制备方法和含有该混合物的药物组合物
公开(公告)号：US07019144B2
公开(公告)日：2006-03-28
申请号：US10608709
申请日：2003-06-27
申请人： Il Hwan Cho , Hyun Jung Park , Ji Young Noh , Hyung Chul Ryu , Sang Wook Park , Sung Hak Jung , Sung Hak Lee , Jong Hoon Kim , Jee Woong Lim , Chun Seon Lyu , Dal Hyun Kim , Young Hoon Kim , Kyu Jeong Yeon , Myeong Yun Chae , In Ki Min , Hae Tak Jin , Kyoung Rae Kang
发明人： Il Hwan Cho , Hyun Jung Park , Ji Young Noh , Hyung Chul Ryu , Sang Wook Park , Sung Hak Jung , Sung Hak Lee , Jong Hoon Kim , Jee Woong Lim , Chun Seon Lyu , Dal Hyun Kim , Young Hoon Kim , Kyu Jeong Yeon , Myeong Yun Chae , In Ki Min , Hae Tak Jin , Kyoung Rae Kang
IPC分类号： C07D401/04 , C07D249/10 , C07D249/12 , C07D249/14
CPC分类号： C07D249/08 , C07C311/39 , C07C323/36 , C07D213/77 , C07D237/20 , C07D401/04 , C07D403/04 , C07D405/04
摘要： A 1,2,4-Triazole derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided.
摘要翻译：提供式1的1,2,4-三唑衍生物或其无毒盐，其制备方法和含有该衍生物或盐作为有效成分的药物组合物。

64. 发明授权

US06913976B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06913976B2
公开(公告)日：2005-07-05
申请号：US10659814
申请日：2003-09-11
申请人： Seung Cheol Lee , Sang Wook Park
发明人： Seung Cheol Lee , Sang Wook Park
IPC分类号： H01L21/8247 , H01L21/28 , H01L27/115 , H01L29/788 , H01L29/792 , H10L21/336
CPC分类号： H01L29/7881 , H01L21/28247 , H01L21/28273
摘要： Disclosed is a method of manufacturing the semiconductor devices. The method comprising the steps of forming a gate electrode on a semiconductor substrate, depositing an oxide film for a spacer on the gate electrode, implementing an anisotropic dry etch process for the oxide film for the spacer to form spacers at the sidewalls of the gate electrode, and implementing a rapid thermal annealing process for the spacers under an oxygen atmosphere in order to segregate hydrogen contained within the spacers toward the surface. Therefore, hydrogen contained within the spacer oxide film is not diffused into the tunnel oxide film and the film quality of the tunnel oxide film is thus improved. As a result, program or erase operation characteristics of the flash memory device and a retention characteristic of the flash memory device could be improved.
摘要翻译：公开了半导体器件的制造方法。该方法包括以下步骤：在半导体衬底上形成栅电极，在栅电极上沉积用于间隔物的氧化物膜，实现用于间隔物的氧化膜的各向异性干蚀刻工艺，以在栅电极的侧壁处形成间隔物并且在氧气氛下实施用于间隔物的快速热退火工艺，以便将包含在间隔物内的氢气朝向表面分离。因此，间隔氧化膜中所含的氢不会扩散到隧道氧化膜中，因此隧道氧化膜的膜质量得到改善。结果，可以提高闪速存储器件的编程或擦除操作特性以及闪速存储器件的保持特性。

65. 发明授权

US06900096B2 Method of manufacturing a flash memory cell 失效
标题翻译：制造闪存单元的方法
公开(公告)号：US06900096B2
公开(公告)日：2005-05-31
申请号：US10285590
申请日：2002-11-01
申请人： Cha Deok Dong , Sang Wook Park
发明人： Cha Deok Dong , Sang Wook Park
IPC分类号： H01L21/8247 , H01L21/28 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/336
CPC分类号： H01L21/28273
摘要： The present invention relates to a method of manufacturing a flash memory cell capable of preventing an oxidation of a dielectric film between a floating gate and a control gate, in a manner that a polysilicon film for floating gate is deposited, nitrogen ions are injected to make amorphous and contaminate the surface of the polysilicon film.
摘要翻译：本发明涉及一种制造闪存单元的方法，该闪速存储单元能够防止浮置栅极和控制栅极之间的电介质膜氧化，从而沉积浮栅的多晶硅膜，注入氮离子以形成无定形并污染多晶硅膜的表面。

66. 发明授权

US06893981B2 Method of manufacturing a semiconductor device by RTA process in nitrogen atmosphere 失效
标题翻译：在氮气氛下通过RTA工艺制造半导体器件的方法
公开(公告)号：US06893981B2
公开(公告)日：2005-05-17
申请号：US10610628
申请日：2003-07-02
申请人： Sang Wook Park , Seung Cheol Lee
发明人： Sang Wook Park , Seung Cheol Lee
IPC分类号： H01L21/8247 , H01L21/336 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L21/31 , H01L21/469
CPC分类号： H01L29/66825 , H01L29/42324
摘要： Disclosed is a method of manufacturing a semiconductor device. A gate is formed on a given region of a semiconductor substrate. Spacers are then formed using DCS-HTO or TEOS. Hydrogen remaining within the spacers is removed by a RTA process under nitrogen atmosphere and nitride films are formed on the spacers at the same time. In case of a flash memory device, a retention characteristic can be improved. A process of forming the nitride film additionally required in a subsequent contact hole formation process may be omitted. The sheet resistance of the gate could be improved by promoting growth of a crystal grain of a tungsten silicide film constituting a control gate.
摘要翻译：公开了半导体器件的制造方法。栅极形成在半导体衬底的给定区域上。然后使用DCS-HTO或TEOS形成间隔物。通过RTA工艺在氮气氛下除去留在间隔物内的氢，同时在间隔物上形成氮化物膜。在闪速存储器件的情况下，可以提高保持特性。可以省略在随后的接触孔形成处理中另外需要的形成氮化物膜的工艺。通过促进构成控制栅极的硅化钨膜的晶粒的生长，可以提高栅极的薄层电阻。

67. 发明授权

US06753232B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06753232B2
公开(公告)日：2004-06-22
申请号：US10139329
申请日：2002-05-07
申请人： Noh-Yeal Kwak , Sang Wook Park
发明人： Noh-Yeal Kwak , Sang Wook Park
IPC分类号： H01L21336
CPC分类号： H01L21/265 , H01L21/2236 , H01L21/2652 , H01L21/26586 , H01L29/4941
摘要： The present invention discloses a method for fabricating a semiconductor device. A stabilized junction is formed by simultaneously adjusting diffusion in a channel direction and a depth direction by restricting transient enhanced diffusion and oxidation enhanced diffusion, and reducing a short channel effect and diffusion in the depth direction, by positioning a nitrified oxide film between a gate electrode and a nitride film spacer formed at side walls of the gate electrode in order to remove defects generated due to stress differences between the gate electrode and the nitride film spacer in a formation process of a PMOS transistor. It is thus possible to form a device having an ultra shallow junction which is not influenced by miniaturization.
摘要翻译：本发明公开了一种半导体器件的制造方法。通过在栅电极之间定位硝化氧化膜，通过同时调节通道方向和深度方向上的扩散，通过限制瞬时增强的扩散和氧化增强的扩散以及减小短沟道效应和深度方向的扩散来形成稳定的结以及形成在栅电极的侧壁处的氮化物膜间隔物，以便在PMOS晶体管的形成过程中消除由于栅电极和氮化物膜间隔物之间的应力差而产生的缺陷。因此，可以形成不受小型化影响的具有超浅结的装置。

68. 发明授权

US06583321B1 4′-methanesulfonyl-biphenyl derivatives as a highly selective cyclooxygenase-2 inhibitor 有权
标题翻译： 4'-甲磺酰基 - 联苯衍生物作为高选择性环加氧酶-2抑制剂
公开(公告)号：US06583321B1
公开(公告)日：2003-06-24
申请号：US10264113
申请日：2002-10-03
申请人： Il Hwan Cho , Jee Woong Lim , Ji Young Noh , Jong Hoon Kim , Sang Wook Park , Hyung Chul Ryu , Je Hak Kim , Hyung Ok Chun , So Young Wang , Eun Young Lee
发明人： Il Hwan Cho , Jee Woong Lim , Ji Young Noh , Jong Hoon Kim , Sang Wook Park , Hyung Chul Ryu , Je Hak Kim , Hyung Ok Chun , So Young Wang , Eun Young Lee
IPC分类号： C07C31714
CPC分类号： C07C317/22 , C07C2601/02 , C07C2601/08
摘要： The present invention relates to a novel 4′-methanesulfonyl-biphenyl derivative having a structure of formula 1 and its pharmaceutically acceptable salts as a highly selective cyclooxygenase-2 inhibitor. Wherein, R1 and R2 are defined in this specification respectively.
摘要翻译：本发明涉及具有式1结构的新型4'-甲磺酰基 - 联苯衍生物及其药学上可接受的盐作为高选择性环加氧酶-2抑制剂。其中，R1和R2分别在本说明书中定义。

69. 发明授权

US06479367B2 Method for forming isolation layer in semiconductor device 有权
标题翻译：在半导体器件中形成隔离层的方法
公开(公告)号：US06479367B2
公开(公告)日：2002-11-12
申请号：US09893570
申请日：2001-06-29
申请人： Sang Wook Park
发明人： Sang Wook Park
IPC分类号： H01L2176
CPC分类号： H01L21/76237 , H01L21/31612 , H01L21/3185
摘要： A method for forming an isolation layer in a semiconductor device, to avoid the occurrence of an angular formation phenomenon at the edge portions of the upper and lower portions of the trench during formation of a shallow trench isolation layer (STI), so that malfunction of the device and the deterioration of its performance due to a parasitic transistor and leakage current, can be prevented. Advantageously, silicon nitride films are formed at the side wall of the pad oxide film and the surface of trench silicon through a nitrogen (N+) plasma nitrification process, after a trench etching process, for formation of STI, so that the generation of a moat is inhibited and deterioration of the device is prevented. The isolation layer in a semiconductor device is formed by forming a pad oxide film in a wet oxidation process on a silicon substrate, forming a pad nitride film in a low pressure chemical vapor deposition process on the pad oxide film, forming a shallow trench by etching the pad nitride film, the pad oxide film and the silicon substrate to a predetermined depth, forming a silicon nitride film in a nitrogen plasma nitrification process on the inner wall of the trench, filling the trench where the silicon nitride film is formed with an oxide film, and planarizing the pad nitride film and the pad oxide film in a chemical mechanical polishing process so that the silicon substrate can be exposed.
摘要翻译：一种用于在半导体器件中形成隔离层的方法，以避免在形成浅沟槽隔离层（STI）期间在沟槽的上部和下部的边缘部分产生角度形成现象，使得故障可以防止由于寄生晶体管和漏电流引起的器件性能劣化。有利地，在沟槽蚀刻工艺之后，通过氮（N +）等离子体硝化工艺在衬垫氧化膜的侧壁和沟槽硅的表面上形成氮化硅膜，以形成STI，从而产生护城河被抑制，并且防止了装置的劣化。半导体器件中的隔离层通过在硅衬底上形成湿式氧化工艺中的衬垫氧化膜形成，在衬底氧化膜上形成低压化学气相沉积工艺中的衬垫氮化物膜，通过蚀刻形成浅沟槽衬垫氮化物膜，衬垫氧化物膜和硅衬底到预定深度，在氮等离子体硝化过程中在沟槽的内壁上形成氮化硅膜，填充形成氮化硅膜的沟槽，其中形成氧化物膜，并且在化学机械抛光工艺中平坦化衬垫氮化物膜和衬垫氧化物膜，使得硅衬底可以暴露。

70. 发明授权

US06222259B1 Stack package and method of fabricating the same 有权
标题翻译：堆叠封装及其制造方法
公开(公告)号：US06222259B1
公开(公告)日：2001-04-24
申请号：US09393869
申请日：1999-09-10
申请人： Sang Wook Park , Soon Jin Cho
发明人： Sang Wook Park , Soon Jin Cho
IPC分类号： H01L2348
CPC分类号： H01L24/48 , H01L21/565 , H01L23/16 , H01L23/3107 , H01L24/45 , H01L25/0657 , H01L25/105 , H01L2224/05599 , H01L2224/451 , H01L2224/48145 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/4899 , H01L2224/85399 , H01L2225/06506 , H01L2225/0652 , H01L2225/06575 , H01L2225/06582 , H01L2225/06586 , H01L2225/1005 , H01L2225/1029 , H01L2225/1058 , H01L2225/1094 , H01L2924/00014 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2924/00015 , H01L2924/00012
摘要： Disclosed is a stack package and a method of manufacturing the same. The stack package of the present invention comprises a ceramic capsule. A pair of protruding portions are formed at both upper sides of the ceramic capsule. A first semiconductor chip is attached on the upper face of the ceramic capsule and a second semiconductor chip is attached on a lower face of the ceramic capsule. The first and second semiconductor chips are disposed such that their bonding pads are disposed upwardly, more particularly the second semiconductor chip has a size that its bonding pad may be exposed from both sides of the ceramic capsule. It is preferable to attach a heatsink at the lower face of the second semiconductor chip. The first and second semiconductor chips are electrically connected with a metal wire. A midway portion of the metal wire is laid on the protruding portion of the ceramic capsule. The entire resultant is encapsulated with a molding compound while exposing the portion of metal wire laid on the protruding portion and the heatsink. A conductive bump is formed on the exposed portion of the metal wire, and a solder ball is mounted on the conductive bump.
摘要翻译：公开了一种堆叠包装及其制造方法。本发明的堆叠包括陶瓷胶囊。在陶瓷胶囊的两个上侧形成有一对突出部。第一半导体芯片附着在陶瓷胶囊的上表面上，第二半导体芯片附着在陶瓷胶囊的下表面上。第一半导体芯片和第二半导体芯片被布置成使得它们的焊盘向上设置，更具体地，第二半导体芯片的尺寸使得其焊盘可以从陶瓷胶囊的两侧露出。优选在第二半导体芯片的下表面附接散热器。第一和第二半导体芯片与金属线电连接。金属线的中间部分铺设在陶瓷胶囊的突出部分上。整个产物用模塑料封装，同时暴露放置在突出部分和散热器上的金属线的部分。在金属线的暴露部分上形成导电凸块，并且在导电凸块上安装焊球。

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