专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US08470516B2 Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles 失效
标题翻译：通过使用化学扩增的电子束光刻形成浮雕图案的方法和衍生制品
公开(公告)号：US08470516B2
公开(公告)日：2013-06-25
申请号：US12542821
申请日：2009-08-18
申请人： Robert D. Allen , Luisa Bozano , Phillip Brock , Qinghuang Lin , Alshakim Nelson , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Luisa Bozano , Phillip Brock , Qinghuang Lin , Alshakim Nelson , Ratnam Sooriyakumaran
IPC分类号： G03F7/00 , G03F7/26
CPC分类号： G03F7/038 , G03F7/0757 , G03F7/2059 , G03F7/40
摘要： A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.
摘要翻译：产生浮雕图案的方法包括将抗蚀剂组合物设置在基底上以形成膜，抗蚀剂组合物包含式（1）的第一倍半硅氧烷聚合物：式（2）的第二倍半硅氧烷聚合物：和光敏酸发电机; 通过电子束光刻对图案进行图案曝光; 加热暴露的膜以在暴露的区域中实现第一聚合物和第二聚合物的交联; 并将曝光的胶片显影形成负浮雕图案。

62. 发明授权

US08461039B2 Patternable low-K dielectric interconnect structure with a graded cap layer and method of fabrication 失效
标题翻译：具有梯度盖层的可成形的低K电介质互连结构和制造方法
公开(公告)号：US08461039B2
公开(公告)日：2013-06-11
申请号：US13524298
申请日：2012-06-15
申请人： Qinghuang Lin , Deborah A. Neumayer
发明人： Qinghuang Lin , Deborah A. Neumayer
IPC分类号： H01L21/4763
CPC分类号： H01L21/76835 , C08G77/04 , G03F7/0757 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/0276 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/76802 , H01L21/76808 , H01L21/7682 , H01L21/76832 , H01L2221/1031
摘要： An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.
摘要翻译：提供了互连结构，其包括位于图案化分级盖层的表面上的至少一个图案化和固化的低k材料。所述至少一种固化和图案化的低k材料和图案化的梯形覆盖层各自具有嵌入其中的导电填充区域。图案化和固化的低k材料是官能化聚合物，共聚物或共混物的固化产物，其包括具有一个或多个酸敏感可成像基团的聚合物和/或共聚物的任何组合中的至少两种，并且分级盖层包括用作阻挡区域的下部区域和具有永久抗反射涂层的抗反射性能的上部区域。

63. 发明授权

US08450854B2 Interconnect structures with patternable low-k dielectrics and method of fabricating same 有权
标题翻译：具有可编程低k电介质的互连结构及其制造方法
公开(公告)号：US08450854B2
公开(公告)日：2013-05-28
申请号：US12841359
申请日：2010-07-22
申请人： Qinghuang Lin , Shyng-Tsong Chen
发明人： Qinghuang Lin , Shyng-Tsong Chen
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/31 , H01L21/3122 , H01L21/76802 , H01L21/76832 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.
摘要翻译：本发明提供一种互连结构，其中使用可图案化的低k材料作为互连电介质材料。具体而言，本发明涉及具有至少一个可构图的低k电介质的单镶嵌和双镶嵌低k互连结构。一般来说，互连结构包括位于衬底表面上的至少一个图案化和固化的低k电介质材料。所述至少一种固化和图案化的低k材料具有嵌入其中的导电填充区域，并且通常但不总是包括通过氧原子键合到环上的Si原子。本发明还提供一种形成这种互连结构的方法，其中在图案化的低k材料图案中不使用单独的光致抗蚀剂。

64. 发明申请

US20130032945A1 SELF-ALIGNED FINE PITCH PERMANENT ON-CHIP INTERCONNECT STRUCTURES AND METHOD OF FABRICATION 有权
公开(公告)号：US20130032945A1
公开(公告)日：2013-02-07
申请号：US13197325
申请日：2011-08-03
申请人： Qinghuang Lin , Sanjay Mehta , Hosadurga Shobha
发明人： Qinghuang Lin , Sanjay Mehta , Hosadurga Shobha
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5222 , H01L21/768 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76816 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L23/53295 , H01L2221/1026 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.

65. 发明授权

US08084862B2 Interconnect structures with patternable low-k dielectrics and method of fabricating same 有权
标题翻译：具有可编程低k电介质的互连结构及其制造方法
公开(公告)号：US08084862B2
公开(公告)日：2011-12-27
申请号：US11858624
申请日：2007-09-20
申请人： Qinghuang Lin , Shyng-Tsong Chen
发明人： Qinghuang Lin , Shyng-Tsong Chen
IPC分类号： H01L23/52
CPC分类号： H01L21/76808 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/31 , H01L21/3122 , H01L21/76802 , H01L21/76832 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.
摘要翻译：本发明提供一种互连结构，其中使用可图案化的低k材料作为互连电介质材料。具体而言，本发明涉及具有至少一个可构图的低k电介质的单镶嵌和双镶嵌低k互连结构。一般来说，互连结构包括位于衬底表面上的至少一个图案化和固化的低k电介质材料。所述至少一种固化和图案化的低k材料具有嵌入其中的导电填充区域，并且通常但不总是包括通过氧原子键合到环上的Si原子。本发明还提供一种形成这种互连结构的方法，其中在图案化的低k材料图案中不使用单独的光致抗蚀剂。

66. 发明授权

US08029971B2 Photopatternable dielectric materials for BEOL applications and methods for use 有权
标题翻译：用于BEOL应用的光图案介电材料和使用方法
公开(公告)号：US08029971B2
公开(公告)日：2011-10-04
申请号：US12047435
申请日：2008-03-13
申请人： Robert D. Allen , Phillip Joe Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip Joe Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/40 , G03F7/38
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046 , G03F7/40 , Y10S430/106 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.
摘要翻译：组合，一种方法和一种光图案化混合物。组合物包括第一和第二聚合物的共混物。第一聚合物是取代的倍半硅氧烷共聚物。第二聚合物是取代的倍半硅氧烷聚合物。第二聚合物被配置为在暴露于光，热能或其组合时与第一聚合物，第二聚合物或其组合进行化学交联。组合物包括光敏酸产生剂。该方法包括形成膜。膜被图案化成像，并且至少一个区域暴露于辐射。在成像之后，烘烤该膜，其中至少一个曝光区域呈现基本上可溶的。烘烤后，显影膜，其中保留有浮雕图案。浮雕图案暴露于辐射。浮雕图案被烘烤。浮雕图案被修复。还描述了化学放大的正色调可光图案化混合物。

67. 发明申请

US20110221062A1 METHODS FOR FABRICATION OF AN AIR GAP-CONTAINING INTERCONNECT STRUCTURE 有权
标题翻译：用于制造包含空气间隙的互连结构的方法
公开(公告)号：US20110221062A1
公开(公告)日：2011-09-15
申请号：US12721032
申请日：2010-03-10
申请人： Lawrence A. Clevenger , Maxime Darnon , Satyanarayana V. Nitta , Anthony D. Lisi , Qinghuang Lin
发明人： Lawrence A. Clevenger , Maxime Darnon , Satyanarayana V. Nitta , Anthony D. Lisi , Qinghuang Lin
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/4821 , C08L83/04 , H01L21/02126 , H01L21/02274 , H01L21/02282 , H01L21/02318 , H01L21/31 , H01L21/3105 , H01L21/76807 , H01L21/76808 , H01L21/7682 , H01L23/5222 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.
摘要翻译：公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。在本发明的方法中，不需要蚀刻步骤来形成气隙。由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

68. 发明授权

US08017522B2 Mechanically robust metal/low-κ interconnects 有权
标题翻译：机械坚固的金属/低压互连
公开(公告)号：US08017522B2
公开(公告)日：2011-09-13
申请号：US11626550
申请日：2007-01-24
申请人： Qinghuang Lin , Terry A. Spooner , Darshan D. Gandhi , Christy S. Tyberg
发明人： Qinghuang Lin , Terry A. Spooner , Darshan D. Gandhi , Christy S. Tyberg
IPC分类号： H01L21/44 , H01L21/311
CPC分类号： H01L21/3105 , H01L21/76805 , H01L21/76825 , H01L21/76826 , H01L21/76834
摘要： A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.
摘要翻译：提供了具有改善的低k电介质层和含电介质衬底之间的粘附强度的机械稳固的半导体结构。特别地，本发明提供了一种结构，其包括含电介质的衬底，其具有包括化学和物理上不同于衬底的经处理的表面层的上部区域; 以及位于所述基板的经处理的表面层上的低k电介质材料。经处理的表面层和低k电介质材料形成界面，该界面的粘合强度大于界面两侧的较弱材料的内聚强度的60％。经处理的表面通过在形成低k电介质材料之前用光化辐射，等离子体和电子束辐射中的至少一种来处理衬底的表面而形成。

69. 发明申请

US20110115090A1 INTERCONNECT STRUCTURE INCLUDING A MODIFIED PHOTORESIST AS A PERMANENT INTERCONNECT DIELECTRIC AND METHOD OF FABRICATING SAME 有权
标题翻译：包括作为永久互连电介质的改性光电子体的互连结构及其制造方法
公开(公告)号：US20110115090A1
公开(公告)日：2011-05-19
申请号：US12622111
申请日：2009-11-19
申请人： Qinghuang Lin
发明人： Qinghuang Lin
IPC分类号： H01L21/768 , H01L23/48
CPC分类号： H01L21/76825 , H01L21/0276 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L21/76802 , H01L21/76808 , H01L21/76826 , H01L23/5329 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A photoresist conversion that changes a patterned photoresist into a permanent patterned interconnect dielectric is described. The photoresist conversion process includes adding a dielectric enabling element into a patterned photoresist. The dielectric enabling element-containing photoresist is converted into a permanent patterned dielectric material by performing a curing step. In one embodiment, a method is described that includes providing at least one photoresist to an upper surface of a substrate. At least one interconnect pattern is formed into the at least one photoresist. A dielectric enabling element is added to the patterned photoresist and thereafter the patterned photoresist including the dielectric enabling element is cured into a cured permanent patterned dielectric material. The cured permanent patterned dielectric material includes the dielectric enabling therein.
摘要翻译：描述了将图案化的光致抗蚀剂改变成永久性图案化互连电介质的光致抗蚀剂转换。光致抗蚀剂转换工艺包括将电介质使能元件添加到图案化光致抗蚀剂中。通过进行固化步骤将含电介质使能元素的光致抗蚀剂转变成永久图案化的电介质材料。在一个实施例中，描述了一种方法，其包括向衬底的上表面提供至少一种光致抗蚀剂。至少一个互连图案形成至少一个光致抗蚀剂。将电介质使能元件添加到图案化的光致抗蚀剂中，此后包括电介质使能元件的图案化光致抗蚀剂固化成固化的永久性图案化电介质材料。固化的永久性图案化电介质材料包括其中的电介质。

70. 发明申请

US20100314767A1 SELF-ALIGNED DUAL DAMASCENE BEOL STRUCTURES WITH PATTERNABLE LOW- K MATERIAL AND METHODS OF FORMING SAME 有权
标题翻译：自对准双DAMASCENE BEOL结构与方形低K材料及其形成方法
公开(公告)号：US20100314767A1
公开(公告)日：2010-12-16
申请号：US12485366
申请日：2009-06-16
申请人： Shyng-Tsong Chen , Qinghuang Lin , Sampath Purushothaman , Terry A. Spooner , Shawn M. Walsh
发明人： Shyng-Tsong Chen , Qinghuang Lin , Sampath Purushothaman , Terry A. Spooner , Shawn M. Walsh
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5329 , H01L21/4846 , H01L21/76801 , H01L21/76808 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L23/49894 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.
摘要翻译：提供了自对准的互连结构，其包括位于衬底的表面上的第一图案化和固化的低k材料，其中第一图案化和固化的低k材料包括至少一个第一互连图案（通孔或沟槽图案）其中。具有不同于第一互连图案的至少一个第二互连图案的第二图案化和固化的低k材料位于第一图案化和固化的低k材料的顶部。第二图案化和固化的低k材料的一部分部分地填充第一图案化和固化的低k材料内的至少一个第一互连。导电材料填充至少一个第一互连图案和至少一个第二互连图案。还提供了形成这种自对准互连结构的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式