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61. 发明授权

US10687191B1 Bluetooth gateway 有权
公开(公告)号：US10687191B1
公开(公告)日：2020-06-16
申请号：US16238611
申请日：2019-01-03
申请人： Ming-Tsung Chen
发明人： Ming-Tsung Chen
IPC分类号： H04W4/80 , H04W88/16
摘要： A Bluetooth gateway communicating with a plurality of electronic devices includes a first Bluetooth module including a first communication sequence, and a second Bluetooth module being electrically connected to the first Bluetooth module and including a second communication sequence. The first Bluetooth module and the second Bluetooth module determine whether to communicate with one of the electronic devices based on the first communication sequence and the second communication sequence, and current connection states of the first Bluetooth module and the second Bluetooth module.

62. 发明授权

US10342106B1 Smart dimming system 有权
公开(公告)号：US10342106B1
公开(公告)日：2019-07-02
申请号：US16227001
申请日：2018-12-20
申请人： Ming-Tsung Chen
发明人： Ming-Tsung Chen , Szu-Mei Sun
IPC分类号： H05B37/02 , H05B33/08
摘要： A smart dimming system includes: a server communicated with a control device; a Bluetooth series interface control module; a first series dimming control module electrically connected to a first light-emitting diode lamp module; and a second series dimming control module electrically connected to a second light-emitting diode lamp module. One of the first series dimming control module and the second series dimming control module is electrically connected to the Bluetooth series interface control module. A dimming control signal is transmitted to the server, the server provides a Bluetooth control signal to the Bluetooth series interface control module according to the dimming control signal, and the Bluetooth series interface control module provides a series dimming signal to one of the first series dimming control module and the second series dimming control module to dim light of the first light-emitting diode lamp module and the second light-emitting diode lamp module.

63. 发明申请

US20130240956A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130240956A1
公开(公告)日：2013-09-19
申请号：US13419530
申请日：2012-03-14
申请人： Hsin-Ming Hou , Yu-Cheng Tung , Ji-Fu Kung , Wai-Yi Lien , Ming-Tsung Chen
发明人： Hsin-Ming Hou , Yu-Cheng Tung , Ji-Fu Kung , Wai-Yi Lien , Ming-Tsung Chen
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/78 , H01L21/76224 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device including a substrate, a plurality of isolation structures, at least a gate structure, a plurality of dummy gate structures and a plurality of epitaxial structures is provided. The substrate has an active area defined by the isolation structures disposed within the substrate. That is, the active area is defined between the isolation structures. The gate structure is disposed on the substrate and located within the active area. The dummy gate structures are disposed on the substrate and located out of the active area. The edge of each dummy gate structure is separated from the boundary of the active area with a distance smaller than 135 angstroms. The epitaxial structures are disposed within the active area and in a portion of the substrate on two sides of the gate structure. The invention also provided a method for fabricating semiconductor device.
摘要翻译：提供了包括衬底，多个隔离结构，至少栅极结构，多个虚拟栅极结构和多个外延结构的半导体器件。衬底具有由设置在衬底内的隔离结构限定的有源区。也就是说，在隔离结构之间限定有源区。栅极结构设置在基板上并且位于有源区域内。虚拟栅极结构设置在基板上并且位于有源区域之外。每个虚拟栅极结构的边缘与有效区域的边界分开，距离小于135埃。外延结构被布置在栅极结构的两侧的有源区域内和衬底的一部分中。本发明还提供了一种制造半导体器件的方法。

64. 发明授权

US08369066B2 Lamellar stacked solid electrolytic capacitor 有权
标题翻译：层状固体电解电容器
公开(公告)号：US08369066B2
公开(公告)日：2013-02-05
申请号：US12713398
申请日：2010-02-26
申请人： Ching-Feng Lin , Yui-Hsin Fran , Chi-Hao Chiu , Ming-Tsung Chen , Cheng-Wei Lai , Chun-Chia Huang
发明人： Ching-Feng Lin , Yui-Hsin Fran , Chi-Hao Chiu , Ming-Tsung Chen , Cheng-Wei Lai , Chun-Chia Huang
IPC分类号： H01G9/00
CPC分类号： H01G9/012 , H01G2/06 , H01G9/15
摘要： A lamellar stacked solid electrolytic capacitor includes a plurality of capacitor units, a substrate unit and a package unit. Each capacitor unit is composed of a negative foil, an isolation paper with conductive polymer substance, a positive foil, an isolation paper with conductive polymer substance and a negative foil that are stacked onto each other in sequence, the positive foils of the capacitor units are electrically connected to each other, the negative foils of the capacitor units are electrically connected to each other, and the positive foils and the negative foils are insulated from each other. The substrate unit has a positive guiding substrate electrically connected to the positive foils of the capacitor units and a negative guiding substrate electrically connected to the negative foils of the capacitor units. The package unit covers the capacitor units and one part of the substrate unit.
摘要翻译：片状堆叠固体电解电容器包括多个电容器单元，基板单元和封装单元。每个电容器单元由负箔，具有导电聚合物物质的隔离纸，正箔，具有导电聚合物物质的隔离纸和负箔依次堆叠组成，电容器单元的正箔是彼此电连接，电容器单元的负箔彼此电连接，并且正箔和负箔彼此绝缘。基板单元具有电连接到电容器单元的正箔的正引导基板和电连接到电容器单元的负箔的负引导基板。封装单元覆盖电容器单元和衬底单元的一部分。

65. 发明申请

US20110186215A1 APPARATUS AND METHOD FOR LAMINATING A FILM ON A WAFER 审中-公开
标题翻译：用于在薄膜上贴膜的装置和方法
公开(公告)号：US20110186215A1
公开(公告)日：2011-08-04
申请号：US12699064
申请日：2010-02-03
申请人： Chin-Sen LAI , Ming-Tsung Chen
发明人： Chin-Sen LAI , Ming-Tsung Chen
IPC分类号： B32B38/10 , B32B43/00
CPC分类号： B32B38/10 , B32B43/00
摘要： A method for laminating a film on a wafer includes a pre-cutting step: pre-cutting a dry film for fitting a size wafer size; a pre-attaching step: moving and pre-attaching the cut dry film on the wafer for corresponding the cut dry film and the wafer; a laminating step: laminating the cut dry film on the wafer with heating for fixing the cut dry film on the wafer. A flattening step: vertically and rigidly laminating the cut dry film on the wafer with heating again for flattening the cut dry film on the wafer.
摘要翻译：用于在晶片上层压膜的方法包括预切割步骤：预切割用于调整晶片尺寸的干膜; 预先安装步骤：将切割的干膜移动并预先安装在晶片上以对应于切割的干膜和晶片; 层压步骤：通过加热将切割的干膜层压在晶片上，以将切割的干膜固定在晶片上。平整步骤：再次加热，将切割的干膜垂直且刚性地层叠在晶片上，以使晶片上的切割干膜变平。

66. 发明授权

US07696086B2 Fabricating method of an interconnect structure 有权
标题翻译：互连结构的制作方法
公开(公告)号：US07696086B2
公开(公告)日：2010-04-13
申请号：US11309201
申请日：2006-07-13
申请人： Yu-Hao Hsu , Ming-Tsung Chen
发明人： Yu-Hao Hsu , Ming-Tsung Chen
IPC分类号： H01L21/00
CPC分类号： H01L21/76895 , H01L21/76807 , H01L21/76838 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is described, disposed on a substrate with a conductive part thereon and including a dielectric layer, a composite plug and a conductive line. The dielectric layer is disposed on the substrate covering the conductive part. The composite plug is disposed in the dielectric layer electrically connecting with the conductive part, and includes a first plug and a second plug on the first plug, wherein the material or the critical dimension of the second plug is different from that of the first plug. The conductive line is disposed on the dielectric layer electrically connecting with the composite plug.
摘要翻译：描述了一种互连结构，其设置在其上具有导电部分的基板上，并且包括电介质层，复合插塞和导电线。电介质层设置在覆盖导电部件的基板上。复合插头设置在与导电部件电连接的电介质层中，并且包括第一插头和第一插头上的第二插头，其中第二插头的材料或临界尺寸与第一插头的材料或临界尺寸不同。导电线设置在与复合插头电连接的电介质层上。

67. 发明申请

US20070117372A1 FABRICATING METHOD OF AN INTERCONNECT STRUCTURE 有权
标题翻译：互连结构的制作方法
公开(公告)号：US20070117372A1
公开(公告)日：2007-05-24
申请号：US11309201
申请日：2006-07-13
申请人： Yu-Hao Hsu , Ming-Tsung Chen
发明人： Yu-Hao Hsu , Ming-Tsung Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76895 , H01L21/76807 , H01L21/76838 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is described, disposed on a substrate with a conductive part thereon and including a dielectric layer, a composite plug and a conductive line. The dielectric layer is disposed on the substrate covering the conductive part. The composite plug is disposed in the dielectric layer electrically connecting with the conductive part, and includes a first plug and a second plug on the first plug, wherein the material or the critical dimension of the second plug is different from that of the first plug. The conductive line is disposed on the dielectric layer electrically connecting with the composite plug.
摘要翻译：描述了一种互连结构，其设置在其上具有导电部分的基板上，并且包括电介质层，复合插塞和导电线。电介质层设置在覆盖导电部件的基板上。复合插头设置在与导电部件电连接的电介质层中，并且包括第一插头和第一插头上的第二插头，其中第二插头的材料或临界尺寸与第一插头的材料或临界尺寸不同。导电线设置在与复合插头电连接的电介质层上。

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