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    • 63. 发明授权
    • Apparatus and method for evaluating a semiconductor wafer
    • 用于评估半导体晶片的装置和方法
    • US06489801B1
    • 2002-12-03
    • US09544280
    • 2000-04-06
    • Peter G. BordenRegina G. NijmeijerJiping Li
    • Peter G. BordenRegina G. NijmeijerJiping Li
    • G01R3126
    • G01N21/1717G01R31/2648G01R31/2656G01R31/311H01L22/12
    • An apparatus and method uses diffusive modulation (without generating a wave of carriers) for measuring a material property (such as any one or more of: mobility, doping, and lifetime) that is used in evaluating a semiconductor wafer. The measurements are carried out in a small area, for use on wafers having patterns for integrated circuit dice. The measurements are based on measurement of reflectance, for example as a function of carrier concentration. In one implementation, the semiconductor wafer is illuminated with two beams, one with photon energy above the bandgap energy of the semiconductor, and another with photon energy near or below the bandgap. The diameters of the two beams relative to one another are varied to extract additional information about the semiconductor material, for use in measuring, e.g. lifetime.
    • 一种装置和方法使用扩散调制(不产生载波)来测量用于评估半导体晶片的材料性质(例如,迁移率,掺杂和寿命中的任何一个或多个)。 测量在小面积上进行,用于具有用于集成电路芯片的图案的晶片。 测量是基于反射率的测量,例如作为载流子浓度的函数。 在一个实施方案中,用两个光束照射半导体晶片,一个光子能量高于半导体的带隙能量,另一个具有接近或低于带隙的光子能量。 改变两个光束相对于彼此的直径以提取关于半导体材料的附加信息,以用于测量例如半导体材料。 一生。