专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20130265411A1 SYSTEM AND METHOD FOR INSPECTING SCRAPED SURFACE OF A WORKPIECE 审中-公开
标题翻译：检查工件的切割表面的系统和方法
公开(公告)号：US20130265411A1
公开(公告)日：2013-10-10
申请号：US13442391
申请日：2012-04-09
申请人： Ching-Wei Wu , Ying-Shing Shiao , Chia-Hui Tang , Paul Chang
发明人： Ching-Wei Wu , Ying-Shing Shiao , Chia-Hui Tang , Paul Chang
IPC分类号： G06K9/62 , H04N9/04 , H04N7/18
CPC分类号： G06T7/0004 , G06T2207/10024 , G06T2207/20036 , G06T2207/30164 , H04N5/225
摘要： A system for inspecting a scraped surface of a workpiece performs steps of: a) capturing an image of the scraped surface to obtain a original image section; b) removing high point regions whose areas are outside of a predetermined area range to obtain a base image; c) processing pixels of the base image using a first imaging mask to generate a judgment image; d) determining whether uniformity of the high point regions in the base image conforms a standard; e) determining whether a number of the high point regions in the base image falls within a predetermined number range; and f) evaluating whether or not a portion of the scraped surface conforms with the standard based on results of determinations made in steps d) and e).
摘要翻译：用于检查工件的刮削表面的系统执行以下步骤：a）捕获刮削表面的图像以获得原始图像部分; b）去除区域在预定区域范围之外的高点区域以获得基本图像; c）使用第一成像掩模处理所述基本图像的像素以产生判断图像; d）确定基本图像中的高点区域的均匀度是否符合标准; e）确定所述基本图像中的所述高点区域的数量是否在预定数量范围内; 以及f）基于步骤d）和e）中确定的结果来评估刮削表面的一部分是否符合标准。

62. 外观设计

USD686175S1 Wafer carrier having pockets 有权
公开(公告)号：USD686175S1
公开(公告)日：2013-07-16
申请号：US29416224
申请日：2012-03-20
申请人： Alexander I. Gurary , Keng Moy , Paul Chang
设计人： Alexander I. Gurary , Keng Moy , Paul Chang

63. 发明申请

US20130156776A1 COMPOSITIONS AND METHODS FOR TREATING CANCER AND MODULATING STRESS GRANULE FORMATION 有权
标题翻译：用于治疗癌症和调节应力颗粒形成的组合物和方法
公开(公告)号：US20130156776A1
公开(公告)日：2013-06-20
申请号：US13435932
申请日：2012-03-30
申请人： Paul Chang , Sejal . Vyas , Anthony Leung , Phillip A. Sharp
发明人： Paul Chang , Sejal . Vyas , Anthony Leung , Phillip A. Sharp
IPC分类号： A61K38/47 , A61K31/713 , A61K39/395 , C12Q1/68 , C07H21/02 , C12N15/113 , G01N33/68 , A61K38/45 , C07K16/40
CPC分类号： C12N15/1137 , A61K31/713 , A61K38/45 , A61K38/47 , A61K39/395 , A61K39/3955 , C07H21/02 , C07K16/40 , C12N15/113 , C12N2310/14 , C12N2320/12 , C12Q1/6886 , G01N33/6893 , G01N2333/91142 , G01N2500/02
摘要： The invention provides methods for treating or decreasing the likelihood of developing a stress-granule related disorder and/or cancer by administering one or more poly-ADP-ribose polymerase (PARP) inhibitors, one or more PARP activators, one or more poly-ADP-ribose glycosylase (PARG) activators, and/or one or more poly-ADP-ribose glycohydrolase ARH3 activators. The invention also provides corresponding methods of decreasing stress granule formation and/or proliferation in a cell or a population of cells. The invention further provides methods of increasing the number of stress granules and proliferation in a cell or a population of cells by administering one or more PARP activators, one or more PARP inhibitors, one or more PARG inhibitors, and/or one or more ARH3 inhibitors. The invention also provides methods for screening for agents for treating or decreasing the likelihood of developing a stress granule-related disorder or cancer, and methods for determining the propensity for developing a stress granule-related disorder or cancer, as well as compositions and kits containing one or more PARP inhibitors, one or more PARP activators, one or more PARG activators, and one or more ARH3 activators.
摘要翻译：本发明提供了通过施用一种或多种聚ADP-核糖聚合酶（PARP）抑制剂，一种或多种PARP激活剂，一种或多种聚ADP来治疗或降低发展应激颗粒相关病症和/或癌症的可能性的方法核糖糖酵解酶（PARG）激活剂和/或一种或多种聚ADP-核糖糖水解酶ARH3激活剂。本发明还提供减少细胞或细胞群体中应激颗粒形成和/或增殖的相应方法。本发明还提供了通过施用一种或多种PARP激活剂，一种或多种PARP抑制剂，一种或多种PARG抑制剂和/或一种或多种ARH3抑制剂来增加细胞或细胞群体中的应激颗粒数量和增殖的方法。本发明还提供筛选用于治疗或降低发展应激颗粒相关病症或癌症的可能性的药剂的方法，以及用于确定发展应激颗粒相关病症或癌症倾向的方法，以及含有一种或多种PARP抑制剂，一种或多种PARP活化剂，一种或多种PARG活化剂和一种或多种ARH3活化剂。

64. 发明授权

US08466451B2 Single gate inverter nanowire mesh 失效
标题翻译：单门逆变器纳米线网
公开(公告)号：US08466451B2
公开(公告)日：2013-06-18
申请号：US13316515
申请日：2011-12-11
申请人： Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
发明人： Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
IPC分类号： H01L29/06 , H01L31/00 , H01L27/105 , H01L27/148
CPC分类号： H01L27/1203 , H01L27/092 , H01L29/0673 , H01L29/42392 , H01L29/78696 , Y10S977/762 , Y10S977/938
摘要： A FET inverter is provided that includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels, wherein the source and drain regions of one or more of the device layers are doped with an n-type dopant and the source and drain regions of one or more other of the device layers are doped with a p-type dopant; a gate common to each of the device layers surrounding the nanowire channels; a first contact to the source regions of the one or more device layers doped with an n-type dopant; a second contact to the source regions of the one or more device layers doped with a p-type dopant; and a third contact common to the drain regions of each of the device layers. Techniques for fabricating a FET inverter are also provided.
摘要翻译：提供一种FET逆变器，其包括在堆叠中垂直取向的多个器件层，每个器件层具有源极区，漏极区和多个纳米线通道，其中一个或多个器件层的源极和漏极区掺杂有n型掺杂剂，并且一个或多个其它器件层的源极和漏极区掺杂有p型掺杂剂; 围绕纳米线通道的每个器件层共用的栅极; 与掺杂有n型掺杂剂的一个或多个器件层的源极区的第一接触; 与掺杂有p型掺杂剂的一个或多个器件层的源极区的第二接触; 以及每个器件层的漏极区域共同的第三接触。还提供了用于制造FET逆变器的技术。

65. 发明授权

US08435961B2 Methods and compositions for increasing the activity of inhibitory RNA 有权
标题翻译：增加抑制性RNA活性的方法和组合物
公开(公告)号：US08435961B2
公开(公告)日：2013-05-07
申请号：US12821967
申请日：2010-06-23
申请人： Paul Chang , Anthony Leung , Phillip A. Sharp
发明人： Paul Chang , Anthony Leung , Phillip A. Sharp
IPC分类号： A61K31/70 , A61K31/00 , A61K39/395
CPC分类号： C12N15/111 , C07K2319/61 , C12N9/1077 , C12N15/1137 , C12N2310/14 , C12N2320/50
摘要： The invention provides methods for increasing the activity of an inhibitory RNA (RNAi) in a subject requiring administering one or more poly-ADP-ribose polymerase (PARP) inhibitors and/or one or more PARG activators to the subject. The invention also provides methods for increasing the activity of an inhibitory RNA in a cell or cell population requiring contacting a cell or cell population with one or more PARP inhibitors and/or one or more PARG activators. The invention further provides compositions and kits containing one or more PARP inhibitors and/or one or more PARG activators.
摘要翻译：本发明提供了在需要给受试者施用一种或多种聚ADP-核糖聚合酶（PARP）抑制剂和/或一种或多种PARG活化剂的受试者中提高抑制性RNA（RNAi）的活性的方法。本发明还提供了增加细胞或细胞群体中抑制性RNA的活性的方法，其需要使细胞或细胞群体与一种或多种PARP抑制剂和/或一种或多种PARG活化剂接触。本发明还提供了含有一种或多种PARP抑制剂和/或一种或多种PARG活化剂的组合物和试剂盒。

66. 发明授权

US08422273B2 Nanowire mesh FET with multiple threshold voltages 有权
标题翻译：具有多个阈值电压的纳米线网状FET
公开(公告)号：US08422273B2
公开(公告)日：2013-04-16
申请号：US12470159
申请日：2009-05-21
申请人： Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
发明人： Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
IPC分类号： G11C11/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78696
摘要： Nanowire-based field-effect transistors (FETs) and techniques for the fabrication thereof are provided. In one aspect, a FET is provided having a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region, wherein one or more of the device layers are configured to have a different threshold voltage from one or more other of the device layers; and a gate common to each of the device layers surrounding the nanowire channels.
摘要翻译：提供了基于纳米线的场效应晶体管（FET）及其制造技术。在一个方面，提供了一种FET，其具有在堆叠中垂直取向的多个器件层，每个器件层具有源极区，漏极区和连接源区和漏区的多个纳米线通道，其中一个或多个的器件层被配置为具有来自一个或多个其它器件层的不同阈值电压; 以及围绕纳米线通道的每个器件层共用的栅极。

67. 发明申请

US20120326127A1 COLLAPSABLE GATE FOR DEPOSITED NANOSTRUCTURES 失效
标题翻译：沉积式纳米结构的可收缩门
公开(公告)号：US20120326127A1
公开(公告)日：2012-12-27
申请号：US13169542
申请日：2011-06-27
申请人： Josephine B. Chang , Paul Chang , Michael A. Guillorn , Philip S. Waggoner
发明人： Josephine B. Chang , Paul Chang , Michael A. Guillorn , Philip S. Waggoner
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L29/66045 , H01L51/055
摘要： A disposable material layer is first deposited on a graphene layer or a carbon nanotube (CNT). The disposable material layer includes a material that is less inert than graphene or CNT so that a contiguous dielectric material layer can be deposited at a target dielectric thickness without pinholes therein. A gate stack is formed by patterning the contiguous dielectric material layer and a gate conductor layer deposited thereupon. The disposable material layer shields and protects the graphene layer or the CNT during formation of the gate stack. The disposable material layer is then removed by a selective etch, releasing a free-standing gate structure. The free-standing gate structure is collapsed onto the graphene layer or the CNT below at the end of the selective etch so that the bottom surface of the contiguous dielectric material layer contacts an upper surface of the graphene layer or the CNT.
摘要翻译：一次性材料层首先沉积在石墨烯层或碳纳米管（CNT）上。一次性材料层包括比石墨烯或CNT更不惰性的材料，使得可以以目标电介质厚度沉积连续的电介质材料层而没有针孔。通过图案化连续的介电材料层和沉积在其上的栅极导体层来形成栅极叠层。一次性材料层在形成栅极叠层期间屏蔽并保护石墨烯层或CNT。然后通过选择性蚀刻去除一次性材料层，释放独立的栅极结构。独立栅极结构在选择性蚀刻结束时在石墨烯层或CNT上折叠，使得连续介电材料层的底表面接触石墨烯层或CNT的上表面。

68. 发明申请

US20120138888A1 Single Gate Inverter Nanowire Mesh 失效
标题翻译：单门逆变器纳米线网
公开(公告)号：US20120138888A1
公开(公告)日：2012-06-07
申请号：US13316515
申请日：2011-12-11
申请人： Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
发明人： Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
IPC分类号： H01L27/088 , H01L29/775 , B82Y99/00
CPC分类号： H01L27/1203 , H01L27/092 , H01L29/0673 , H01L29/42392 , H01L29/78696 , Y10S977/762 , Y10S977/938
摘要： A FET inverter is provided that includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels, wherein the source and drain regions of one or more of the device layers are doped with an n-type dopant and the source and drain regions of one or more other of the device layers are doped with a p-type dopant; a gate common to each of the device layers surrounding the nanowire channels; a first contact to the source regions of the one or more device layers doped with an n-type dopant; a second contact to the source regions of the one or more device layers doped with a p-type dopant; and a third contact common to the drain regions of each of the device layers. Techniques for fabricating a FET inverter are also provided.
摘要翻译：提供一种FET逆变器，其包括在堆叠中垂直取向的多个器件层，每个器件层具有源极区，漏极区和多个纳米线通道，其中一个或多个器件层的源极和漏极区掺杂有n型掺杂剂，并且一个或多个其它器件层的源极和漏极区掺杂有p型掺杂剂; 围绕纳米线通道的每个器件层共用的栅极; 与掺杂有n型掺杂剂的一个或多个器件层的源极区的第一接触; 与掺杂有p型掺杂剂的一个或多个器件层的源极区的第二接触; 以及每个器件层的漏极区域共同的第三接触。还提供了用于制造FET逆变器的技术。

69. 发明授权

US08051346B2 Fault injection 有权
标题翻译：故障注入
公开(公告)号：US08051346B2
公开(公告)日：2011-11-01
申请号：US12392468
申请日：2009-02-25
申请人： Senthil Somasundaram , Jun Qian , Paul Chang , Thomas A. Hamilton
发明人： Senthil Somasundaram , Jun Qian , Paul Chang , Thomas A. Hamilton
IPC分类号： G01R31/28 , G01R31/08 , G01R27/28 , G01R31/00 , G01R31/14 , G11C7/00 , G11C29/00
CPC分类号： G01R31/31716 , G01R31/31706 , G01R31/31717
摘要： Systems, methods, and other embodiments associated with programmable application specific integrated circuit (ASIC) fault injection are described. One example ASIC includes a serializer de-serializer (SERDES). The example ASIC may also include logics to process data in the ASIC. At least one of the logics either receives data from the SERDES and/or provides data to the SERDES. The example ASIC may also include an embedded fault injection logic (EFIL) to control injection of a fault to a path (e.g., data, control) associated with at least one of the logics. The example ASIC may also include an embedded set of multiplexers (ESOMs) controlled by the EFIL. The ESOMs are controllable by the EFIL to inject a fault signal to the data path.
摘要翻译：描述了与可编程应用专用集成电路（ASIC）故障注入相关联的系统，方法和其他实施例。一个示例性ASIC包括串行器解串器（SERDES）。示例ASIC还可以包括用于处理ASIC中的数据的逻辑。至少有一个逻辑可以从SERDES接收数据和/或向SERDES提供数据。示例性ASIC还可以包括嵌入式故障注入逻辑（EFIL），以控制将故障注入与至少一个逻辑相关联的路径（例如，数据，控制）。示例性ASIC还可以包括由EFIL控制的嵌入式多路复用器集合（ESOM）。 ESOM可由EFIL控制，以将故障信号注入数据通路。

70. 发明申请

US20110097328A1 METHODS AND COMPOSITIONS FOR INCREASING THE ACTIVITY OF INHIBITORY RNA 有权
标题翻译：用于增加抑制性RNA活性的方法和组合物
公开(公告)号：US20110097328A1
公开(公告)日：2011-04-28
申请号：US12821967
申请日：2010-06-23
申请人： Paul Chang , Anthony Leung , Phillip A. Sharp
发明人： Paul Chang , Anthony Leung , Phillip A. Sharp
IPC分类号： A61K39/395 , A61K31/7088 , C12N5/02
CPC分类号： C12N15/111 , C07K2319/61 , C12N9/1077 , C12N15/1137 , C12N2310/14 , C12N2320/50
摘要： The invention provides methods for increasing the activity of an inhibitory RNA (RNAi) in a subject requiring administering one or more poly-ADP-ribose polymerase (PARP) inhibitors and/or one or more PARG activators to the subject. The invention also provides methods for increasing the activity of an inhibitory RNA in a cell or cell population requiring contacting a cell or cell population with one or more PARP inhibitors and/or one or more PARG activators. The invention further provides compositions and kits containing one or more PARP inhibitors and/or one or more PARG activators.
摘要翻译：本发明提供了在需要给受试者施用一种或多种聚ADP-核糖聚合酶（PARP）抑制剂和/或一种或多种PARG活化剂的受试者中提高抑制性RNA（RNAi）的活性的方法。本发明还提供了增加细胞或细胞群体中抑制性RNA的活性的方法，其需要使细胞或细胞群体与一种或多种PARP抑制剂和/或一种或多种PARG活化剂接触。本发明还提供了含有一种或多种PARP抑制剂和/或一种或多种PARG活化剂的组合物和试剂盒。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式