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61. 发明授权

US06223311B1 Semiconductor memory device having deterioration determining function 有权
标题翻译：半导体存储器件具有劣化判定功能
公开(公告)号：US06223311B1
公开(公告)日：2001-04-24
申请号：US09432389
申请日：1999-11-02
申请人： Kunihiro Katayama , Takayuki Tamura , Masashi Naito , Shigemasa Shiota
发明人： Kunihiro Katayama , Takayuki Tamura , Masashi Naito , Shigemasa Shiota
IPC分类号： G11C2900
CPC分类号： G11C29/028 , G11C16/04 , G11C29/50 , G11C29/50004 , G11C29/50012 , G11C29/50016
摘要： In a memory device using an electrically rewritable nonvolatile memory as a storage medium, wherein, in order to allow the memory to deteriorate evenly, the erasing time and writing time are measured, the influence of scatter of cells in the memory being eliminated on the basis of the resultant measurement values, a substantial degree of deterioration being thereby determined with a high accuracy, whereby a memory device of a high reliability and a high efficiency is practically obtained. In order to rewrite an electrically rewritable nonvolatile memory (1), there are provided a means for measuring the erasing time and writing time, a means for comparing an erasing time with a stored reference time, a means for correcting writing time on the basis of the results of the comparison, and a means for determining deterioration on the basis of the results of the correction. According to the present invention, the substantial deterioration of each cell can be determined, and such control is possible that more deteriorated memory is used less frequently while less deteriorated memory is used more frequently. As a result, the reliability of the memory is improved, and the memory can have a longer service life.
摘要翻译：在使用电可重写非易失性存储器作为存储介质的存储装置中，为了使存储器均匀地劣化，测量擦除时间和写入时间，基于消除了存储器中的单元的散射的影响所得到的测量值，由此以高精度确定了相当程度的劣化，从而实际上获得了高可靠性和高效率的存储器件。为了重写可重写的非易失性存储器（1），提供了一种用于测量擦除时间和写入时间的装置，用于将擦除时间与存储的基准时间进行比较的装置，用于基于比较结果，以及根据校正结果确定劣化的方法。根据本发明，可以确定每个单元的实质性劣化，并且可以更频繁地使用较少劣化的存储器，因此可以更少地使用更恶化的存储器，并且可以进行这种控制。结果，提高了存储器的可靠性，并且存储器可以具有更长的使用寿命。

62. 发明授权

US5978941A Semiconductor memory device having deterioration determining function 失效
标题翻译：半导体存储器件具有劣化判定功能
公开(公告)号：US5978941A
公开(公告)日：1999-11-02
申请号：US913338
申请日：1997-09-11
申请人： Kunihiro Katayama , Takayuki Tamura , Masashi Naito , Shigemasa Shiota
发明人： Kunihiro Katayama , Takayuki Tamura , Masashi Naito , Shigemasa Shiota
IPC分类号： G11C16/14 , G11C16/34 , G11C29/50 , G11C29/52 , G11C29/00
CPC分类号： G11C16/3495 , G11C16/14 , G11C16/349 , G11C29/028 , G11C29/50 , G11C29/50004 , G11C29/50012 , G11C29/50016 , G11C29/52 , G11C29/56012 , G11C16/04
摘要： In a memory device using an electrically rewritable nonvolatile memory as a storage medium, wherein, in order to allow the memory to deteriorate evenly, the erasing time and writing time are measured, the influence of scatter of cells in the memory being eliminated on the basis of the resultant measurement values, a substantial degree of deterioration being thereby determined with a high accuracy, whereby a memory device of a high reliability and a high efficiency is practically obtained. In order to rewrite an electrically rewritable nonvolatile memory (1), there are provided a means for measuring the erasing time and writing time, a means for comparing an erasing time with a stored reference time, a means for correcting writing time on the basis of the results of the comparison, and a means for determining deterioration on the basis of the results of the correction. According to the present invention, the substantial deterioration of each cell can be determined, and such control is possible that more deteriorated memory is used less frequently while less deteriorated memory is used more frequently. As a result, the reliability of the memory is improved, and the memory can have a longer service life.
摘要翻译： PCT No.PCT / JP95 / 00429 Sec。 371日期：1997年9月11日 102（e）1997年9月11日PCT 1995年3月15日PCT PCT。出版物WO96 / 28826 日期1996年9月19日在使用电可重写非易失性存储器作为存储介质的存储器件中，为了使存储器均匀地劣化，测量擦除时间和写入时间，存储器中的单元散射的影响基于所得到的测量值消除，从而以高精度确定了显着的劣化程度，从而实际上获得了高可靠性和高效率的存储器件。为了重写可重写的非易失性存储器（1），提供了一种用于测量擦除时间和写入时间的装置，用于将擦除时间与存储的基准时间进行比较的装置，用于基于比较结果，以及根据校正结果确定劣化的方法。根据本发明，可以确定每个单元的实质性劣化，并且可以更频繁地使用较少劣化的存储器，因此可以更少地使用更恶化的存储器，并且可以进行这种控制。结果，提高了存储器的可靠性，并且存储器可以具有更长的使用寿命。

63. 发明申请

US20090187703A1 MEMORY CARD AND ITS INITIAL SETTING METHOD 有权
标题翻译：记忆卡及其初始设置方法
公开(公告)号：US20090187703A1
公开(公告)日：2009-07-23
申请号：US12412117
申请日：2009-03-26
申请人： HIDEFUMI OODATE , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
发明人： HIDEFUMI OODATE , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
IPC分类号： G06F12/02 , G06F12/00 , G11C5/14
CPC分类号： G11C16/20
摘要： In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12 stored in the ROM 4a is written, if a fault is not detected, to the flash memory 2, and this data is read again and is compared with the write check data. FD12 of the ROM 4a. When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.
摘要翻译：在存储卡1的初始设置中，读出存储在闪速存储器2中的闪存检查数据FD，将该数据FD与先前存储在ROM中的操作检查数据FD11进行比较，存储在存储卡1中的写入检查数据FD12 如果没有检测到故障，ROM 4a被写入闪速存储器2，并且该数据被再次读取并且与写检查数据进行比较。 ROM 4a的FD12。当比较这些数据时没有检测到任何故障时，CPU确定闪存2正常。此外，如果在比较数据中检测到故障，则CPU将复位处理故障数据设置为寄存器5a，以将控制器3设置为睡眠模式。当在此期间接收到命令CMD时，再次执行数据比较。

64. 发明授权

US07418602B2 Memory card 失效
标题翻译：存储卡
公开(公告)号：US07418602B2
公开(公告)日：2008-08-26
申请号：US10868960
申请日：2004-06-17
申请人： Satoshi Yoshida , Kunihiro Katayama , Akira Kanehira , Masaharu Ukeda
发明人： Satoshi Yoshida , Kunihiro Katayama , Akira Kanehira , Masaharu Ukeda
IPC分类号： G06F21/00
CPC分类号： G06F21/78 , G06F21/31 , G06F2221/2143
摘要： In order to protect the user security data, provided is a memory card capable of preventing the data leakage to a third party not having the access authority by imposing the limitation on the number of password authentications and automatically erasing the data. In a system comprised of a multimedia card and a host machine electrically connected to the multimedia card and controlling the operations of the multimedia card, a retry counter for storing the number of password authentication failures is provided and the upper limit of the number of failures is registered in a register. When passwords are repeatedly entered once, twice, . . . and n times and the retry counter which counts the entries reaches the upper limit of the number of failures, the data is automatically erased so as not to leave the data in the flash memory.
摘要翻译：为了保护用户安全数据，提供了一种能够通过对密码认证数量进行限制并自动擦除数据来防止数据泄漏给不具有访问权限的第三方的存储卡。在由多媒体卡和与多媒体卡电连接并控制多媒体卡的操作的主机构成的系统中，提供用于存储密码认证失败次数的重试计数器，故障次数的上限为注册登记。当密码重复输入一次，两次，。。。并且n次，对条目进行计数的重试计数器达到故障次数的上限，数据被自动擦除，以便不将数据留在闪存中。

65. 发明申请

US20080059852A1 MEMORY CARD AND ITS INITIAL SETTING METHOD 有权
标题翻译：记忆卡及其初始设置方法
公开(公告)号：US20080059852A1
公开(公告)日：2008-03-06
申请号：US11877500
申请日：2007-10-23
申请人： Hidefumi Oodate , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
发明人： Hidefumi Oodate , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
IPC分类号： G11C29/00
CPC分类号： G11C16/20
摘要： In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12 stored in the ROM 4a is written, if a fault is not detected, to the flash memory 2, and this data is read again and is compared with the write check data. FD12 of the ROM 4a. When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.
摘要翻译：在存储卡1的初始设置中，读出存储在闪速存储器2中的闪存检查数据FD，该数据FD与先前存储在ROM中的操作检查数据FD1＆lt; 1＆gt; 存储在ROM4a中的写入检查数据FD1＆lt; 2＆gt;如果没有检测到故障则被写入闪速存储器2，并且再次读取该数据并与写入检查进行比较数据。 ROM1a的FD1＆lt; 2＆gt ;. 当比较这些数据时没有检测到任何故障时，CPU确定闪存2正常。此外，如果在数据比较中检测到故障，则CPU将复位过程故障数据设置为寄存器5a以将控制器3设置为睡眠模式。当在此期间接收到命令CMD时，再次执行数据比较。

66. 发明授权

US07188265B2 Method of recognizing a card using a select signal during a determination mode and switching from low to high resistance after the determination 有权
标题翻译：在确定模式期间使用选择信号识别卡并在确定之后从低电平切换到高电阻的方法
公开(公告)号：US07188265B2
公开(公告)日：2007-03-06
申请号：US10716456
申请日：2003-11-20
申请人： Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori , Atsushi Shikata , Tetsuya Iida
发明人： Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori , Atsushi Shikata , Tetsuya Iida
IPC分类号： G06F1/26
CPC分类号： G06K19/0701 , G06K19/07
摘要： A memory card is provided in which power consumption is reduced by the pull-up resistor of an input terminal and a misoperation induced by the pull-down resistor of a host apparatus is prevented. The memory card has a select terminal connected to the pull-up resistor. When the mode of the memory card is determined based on an input from the select terminal, a relatively low resistance value is selected for the pull-up resistor of the select terminal before a determination timing and the pull-up resistor is restored to an initial resistance value after the mode determination. A relatively high resistance value reduces a leakage current consumed by the pull-up resistor of the select terminal. When a pull-down resistor is connected to the terminal of a memory card host to which the memory card is attached, if the resistance value of the pull-up resistor is excessively high, it is influenced by the drawing in of a current by the pull-down resistor. If the resistance value of the pull-up resistor of the select terminal is lowered at the time of mode determination, an adverse effect of the lowering of a potential by the pull-down resistor can be circumvented.
摘要翻译：提供了一种存储卡，其中通过输入端的上拉电阻降低功耗，并且防止由主机设备的下拉电阻引起的误操作。存储卡具有连接到上拉电阻的选择端子。当基于来自选择端子的输入确定存储卡的模式时，在确定定时之前为选择端的上拉电阻选择相对较低的电阻值，并且将上拉电阻恢复到初始值模式确定后的电阻值。相对较高的电阻值减小了选择端子的上拉电阻消耗的漏电流。当下拉电阻连接到与存储卡相连的存储卡主机的端子时，如果上拉电阻的电阻值过高，则会受到电流的影响下拉电阻。如果选择端子的上拉电阻的电阻值在模式确定时降低，则可以避免下拉电阻降低电位的不利影响。

67. 发明授权

US07184320B2 Storage device employing a flash memory 有权
标题翻译：采用闪存的存储设备
公开(公告)号：US07184320B2
公开(公告)日：2007-02-27
申请号：US11167187
申请日：2005-06-28
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C11/34
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
摘要翻译：采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器，存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控制器。由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。

68. 发明授权

US07002851B2 Storage device employing a flash memory 失效
公开(公告)号：US07002851B2
公开(公告)日：2006-02-21
申请号：US11085508
申请日：2005-03-22
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G11C7/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

69. 发明申请

US20050289389A1 Storage device employing a flash memory 有权
公开(公告)号：US20050289389A1
公开(公告)日：2005-12-29
申请号：US11167187
申请日：2005-06-28
申请人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人： Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号： G06F3/06 , G06F12/02 , G11C16/10 , G11C29/00 , G06F11/00 , G06F12/00
CPC分类号： G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

70. 发明申请

US20050259465A1 Nonvolatile memory apparatus 审中-公开
标题翻译：非易失存储器
公开(公告)号：US20050259465A1
公开(公告)日：2005-11-24
申请号：US11128289
申请日：2005-05-13
申请人： Satoshi Yoshida , Kunihiro Katayama , Shinsuke Asari
发明人： Satoshi Yoshida , Kunihiro Katayama , Shinsuke Asari
IPC分类号： G06F21/24 , G06F12/00 , G06F12/14 , G06K19/073 , G09C1/00 , G11C16/04 , G11C29/00
CPC分类号： G06F12/1408 , G11C29/78
摘要： In technology for enabling the replacement of part of an operating program of a controller by a modified program on a nonvolatile memory, the present invention prevents tampering and leak of storage information within the nonvolatile memory and the controller. At power-on reset, an encrypted alternative program, if present, is transferred from a nonvolatile memory to a volatile memory, and decrypted when actually executed. A long wait is not required until data processing by a data processor is enabled after the exit from the reset processing. Since the alternative program once decrypted is held in the volatile memory so as to be reusable, it does not need to be decrypted each time it is executed. Since the alternative program is encrypted, even if the nonvolatile memory is physically separated from the controller to illegally dump the alternative program, it is difficult to analyze the data.
摘要翻译：本发明在非易失性存储器中通过修改程序使控制器的一部分操作程序更换的技术中，防止非易失性存储器和控制器内存储信息的篡改和泄露。在上电复位时，加密的替代程序（如果存在）从非易失性存储器传输到易失性存储器，并在实际执行时进行解密。在复位处理退出后，数据处理器的数据处理才能进行长时间的等待。由于一旦解密的替代程序被保存在易失性存储器中以便可重用，因此在每次执行时不需要被解密。由于替代程序被加密，即使非易失性存储器在物理上与控制器分离以非法地转储替代程序，因此难以分析数据。

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