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61. 发明申请

US20060196796A1 Upright-stabilizing packaging for disposable diapers 有权
标题翻译：一次性尿布的稳定包装
公开(公告)号：US20060196796A1
公开(公告)日：2006-09-07
申请号：US11074101
申请日：2005-03-07
申请人： Andreas Motsch , Beate Janik , Martin Frank
发明人： Andreas Motsch , Beate Janik , Martin Frank
IPC分类号： A61B19/02
CPC分类号： B65D75/525 , B65D75/56 , B65D81/36 , B65D2203/00
摘要： A stabilizer for the upright stabilizing of at least one disposable diaper product. The stabilizer may include a front panel, a bottom panel, a rear panel, and at least one standoff. In another exemplary stabilizer for the upright stabilizing of at least one disposable diaper product, the stabilizer may include a circumferential sleeve, a bottom panel, and at least one standoff.
摘要翻译：用于直立稳定至少一种一次性尿布产品的稳定剂。稳定器可以包括前面板，底板，后面板和至少一个支架。在用于至少一个一次性尿布产品的直立稳定的另一示例性稳定器中，稳定器可以包括周向套筒，底部面板和至少一个支架。

62. 发明授权

US07101169B2 Method and device for producing pouch-shaped or pot-shaped parts and use of the parts for accommodating samples or the like 有权
公开(公告)号：US07101169B2
公开(公告)日：2006-09-05
申请号：US10309039
申请日：2002-12-04
申请人： Juergen Fick , Frank Deck , Michael Fritz , Martin Frank
发明人： Juergen Fick , Frank Deck , Michael Fritz , Martin Frank
IPC分类号： B29C33/50
CPC分类号： B29C43/10 , B29C43/42 , B29K2067/00 , B29K2069/00 , B29K2105/256 , Y10S425/044
摘要： The production of pouch-shaped or pot-shaped parts is undertaken in two steps. In the first step, a film located above a die is pressed by a stamp into a cavity that reproduces the part and is subsequently pressed apart in the lower region of the cavity by deformation of the stamp in this region. The device has a rubber-like stamp that expands out on all sides once it has reached the bottom wall of the cavity and causes the film to conform to the shape of the cavity. The stamp is preferably designed in two parts, wherein a stamp insert is guided within a stamp guide and the stamp insert then has at least one deformable region. For removal of the formed film, provision is made that the die can be swung open.

63. 发明申请

US20060166474A1 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow 有权
标题翻译：通过电化学处理利用栅极 - 电介质电流流动的栅堆叠工程
公开(公告)号：US20060166474A1
公开(公告)日：2006-07-27
申请号：US11050790
申请日：2005-01-27
申请人： Philippe Vereecken , Veeraraghavan Basker , Cyril Cabral , Emanuel Cooper , Hariklia Deligianni , Martin Frank , Rajarao Jammy , Vamsi Paruchuri , Katherine Saenger , Xiaoyan Shao
发明人： Philippe Vereecken , Veeraraghavan Basker , Cyril Cabral , Emanuel Cooper , Hariklia Deligianni , Martin Frank , Rajarao Jammy , Vamsi Paruchuri , Katherine Saenger , Xiaoyan Shao
IPC分类号： H01L21/20
CPC分类号： H01L21/2885 , C25D3/50 , C25D5/02 , C25D5/024 , C25D5/54 , C25D7/123 , C25D9/04 , C25F3/14 , H01L21/28079 , H01L21/28114 , H01L21/76885 , H01L29/513 , H01L29/517 , H01L29/78648
摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.
摘要翻译：提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或熔化。还提供了利用电介质电流流动的电介质电化学修饰方法。

64. 发明申请

US20060151846A1 Method of forming HfSiN metal for n-FET applications 审中-公开
公开(公告)号：US20060151846A1
公开(公告)日：2006-07-13
申请号：US11035369
申请日：2005-01-13
申请人： Alessandro Callegari , Martin Frank , Rajarao Jammy , Dianne Lacey , Fenton McFeely , Sufi Zafar
发明人： Alessandro Callegari , Martin Frank , Rajarao Jammy , Dianne Lacey , Fenton McFeely , Sufi Zafar
IPC分类号： H01L29/94
CPC分类号： H01L29/4966 , H01L21/28088 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/6659
摘要： A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000° C.), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN.

65. 发明申请

US20050258491A1 Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides 审中-公开
标题翻译：具有高介电常数栅氧化物的场效应晶体管的阈值和平带电压稳定层
公开(公告)号：US20050258491A1
公开(公告)日：2005-11-24
申请号：US10845719
申请日：2004-05-14
申请人： Nestor Bojarczuk , Eduard Cartier , Martin Frank , Evgeni Gousev , Supratik Guha , Vijay Narayanan
发明人： Nestor Bojarczuk , Eduard Cartier , Martin Frank , Evgeni Gousev , Supratik Guha , Vijay Narayanan
IPC分类号： H01L21/8234 , H01L21/28 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/49 , H01L29/51 , H01L29/76 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/05
CPC分类号： H01L21/28202 , H01L21/28194 , H01L21/823857 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518
摘要： An insulating interlayer for use in complementary metal oxide semiconductor (CMOS) that prevents unwanted shifts in threshold voltage and flatband voltage is provided. The insulating interlayer is located between a gate dielectric having a dielectric constant of greater than 4.0 and a Si-containing gate conductor. The insulating interlayer of the present invention is any metal nitride, that optionally may include oxygen, that is capable of stabilizing the threshold and flatband voltages. In a preferred embodiment, the insulating interlayer is aluminum nitride or aluminum oxynitride and the gate dielectric is hafnium oxide, hafnium silicate or hafnium silicon oxynitride. The present invention is particularly useful in stabilizing the threshold and flatband voltage of p-type field effect transistors.
摘要翻译：提供了用于防止阈值电压和平带电压的不期望的偏移的互补金属氧化物半导体（CMOS）中的绝缘夹层。绝缘中间层位于介电常数大于4.0的栅极电介质和含Si的栅极导体之间。本发明的绝缘中间层是能够稳定阈值和平带电压的任何金属氮化物，其可任选地包括氧。在优选实施例中，绝缘中间层为氮化铝或氮氧化铝，栅极电介质为氧化铪，硅酸铪或铪硅氮氧化物。本发明在稳定p型场效应晶体管的阈值和平带电压方面特别有用。

66. 发明授权

US06830277B2 Arrangement for holding beverage cans or similar receptacles in the interior of vehicles 有权
标题翻译：在车辆内部容纳饮料罐或类似容器的装置
公开(公告)号：US06830277B2
公开(公告)日：2004-12-14
申请号：US10264251
申请日：2002-10-04
申请人： Matthias Zierle , Martin Frank
发明人： Matthias Zierle , Martin Frank
IPC分类号： B60N310
CPC分类号： B60N3/102
摘要： An arrangement for holding beverage cans or similar receptacles in the interior of vehicles is provided inside, in the upper area of a glove compartment, and comprises at least one receiving part for at least one beverage can. The receiving part is displaceable from a covered inoperative position inside the glove compartment into an operative position in front of the dashboard, and a swivellably disposed glove compartment cover is assigned to the glove compartment. When the receiving part is displaced into the operative position, the arrangement does not require the opening of the glove compartment cover. The glove compartment cover extends only approximately to the lower edge of the arrangement, and the arrangement comprises at least one separate flap which has a low height and can be operated separately from the glove compartment cover.
摘要翻译：在手套室的上部区域内设置有用于在车辆内部保持饮料罐或类似容器的装置，并且包括用于至少一个饮料罐的至少一个容纳部件。接收部件可以从手套箱内的被覆盖的非操作位置移动到仪表板前面的操作位置，并且可旋转地设置的手套箱盖被分配给手套箱。当接收部分移动到操作位置时，该装置不需要打开手套箱盖。手套隔间盖仅仅延伸到布置的下边缘，并且该布置包括至少一个具有低高度并且可以与手套箱盖分离地操作的单独的翼片。

67. 发明授权

US06342458B1 Lithium disilicate glass ceramics dental product 有权
标题翻译：二硅酸锂玻璃陶瓷牙科产品
公开(公告)号：US06342458B1
公开(公告)日：2002-01-29
申请号：US09379450
申请日：1999-08-23
申请人： Marcel Schweiger , Martin Frank , Volker Rheinberger , Wolfram Hoeland
发明人： Marcel Schweiger , Martin Frank , Volker Rheinberger , Wolfram Hoeland
IPC分类号： C03B27012
CPC分类号： C03C10/0027 , A61K6/0008 , A61K6/0094 , A61K6/0215 , A61K6/024 , A61K6/0255 , A61K6/0273 , C03C10/0009
摘要： High-strength sinterable lithium disilicate glass ceramics are described which can be further processed in particular by pressing in the viscous state to shaped dental products.
摘要翻译：描述了高强度可烧结二硅酸锂玻璃陶瓷，其特别可以通过在粘性状态下压制成型牙齿产品进一步加工。

68. 发明授权

US06200137B1 Chemically stable translucent apatite glass ceramic 失效
标题翻译：化学稳定的半透明磷灰石玻璃陶瓷
公开(公告)号：US06200137B1
公开(公告)日：2001-03-13
申请号：US09096625
申请日：1998-06-12
申请人： Wolfram Höland , Martin Frank , Helga Drescher , Volker Rheinberger
发明人： Wolfram Höland , Martin Frank , Helga Drescher , Volker Rheinberger
IPC分类号： A61C13083
CPC分类号： C03C4/0021 , A61K6/0008 , A61K6/0017 , A61K6/0085 , A61K6/0215 , A61K6/0235 , A61K6/024 , A61K6/025 , A61K6/026 , A61K6/0273 , C03C10/16
摘要： An apatite glass ceramic is described which is characterized by good chemical stability, a low expansion coefficient and high translucence, and is particularly suitable, by itself or together with glasses or other glass ceramics, as a veneering material for ceramic dental restorations.
摘要翻译：描述了磷灰石玻璃陶瓷，其特征在于具有良好的化学稳定性，低膨胀系数和高半透明度，并且特别适合作为陶瓷牙科修复体的贴面材料本身或与玻璃或其它玻璃陶瓷一起使用。

69. 发明授权

US5432130A Opalescent glass 失效
标题翻译：乳白色玻璃
公开(公告)号：US5432130A
公开(公告)日：1995-07-11
申请号：US225719
申请日：1994-04-11
申请人： Volker Rheinberger , Wolfram Hoeland , Martin Frank
发明人： Volker Rheinberger , Wolfram Hoeland , Martin Frank
IPC分类号： A61K6/06 , C03C3/097 , C03C4/00 , C03C3/083
CPC分类号： C03C4/005 , A61K6/0005 , A61K6/0094 , A61K6/0215 , A61K6/0235 , A61K6/024 , A61K6/025 , A61K6/0276 , C03C3/097
摘要： An opalescent glass is described which is characterized by a continuous glass phase and a discontinuous glass phase dispersed therein, and which can be used as dental material or as a constituent of dental materials.
摘要翻译：描述了一种乳白色玻璃，其特征在于连续玻璃相和分散在其中的不连续玻璃相，并且其可以用作牙科材料或作为牙科材料的成分。

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