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61. 发明授权

US5428577A Semiconductor storage device having word-line voltage booster circuit with decoder and charger 失效
标题翻译：具有解码器和充电器的字线升压电路的半导体存储装置
公开(公告)号：US5428577A
公开(公告)日：1995-06-27
申请号：US117773
申请日：1993-09-08
申请人： Fuminori Yumitori , Yasuhiro Fujii
发明人： Fuminori Yumitori , Yasuhiro Fujii
IPC分类号： G11C11/413 , G11C8/08 , G11C8/12 , G11C11/407 , G11C11/409 , G11C16/06 , G11C17/00 , G11C7/00
CPC分类号： G11C8/12 , G11C8/08
摘要： A semiconductor storage device having a word-line voltage booster circuit includes: a plurality of word-lines connected to each memory cell array; a drive signal generation circuit for producing a word-line drive signal having a voltage higher than a power supply voltage; a decoder circuit for transmitting the word-line drive signal produced by the drive signal generation circuit, when the drive signal generation circuit is selected by an address signal; and a charging circuit connected to a signal path which transmits the word-line drive signal from the drive signal generation circuit to the decoder circuit. The charging circuit charges the signal path before the word-line drive signal is output to the signal path.
摘要翻译：一种具有字线电压升压电路的半导体存储装置包括：连接到每个存储单元阵列的多个字线; 用于产生具有高于电源电压的电压的字线驱动信号的驱动信号产生电路; 当通过地址信号选择驱动信号产生电路时，解码器电路用于传输由驱动信号产生电路产生的字线驱动信号; 以及连接到将来自驱动信号发生电路的字线驱动信号发送到解码器电路的信号路径的充电电路。充电电路在将字线驱动信号输出到信号路径之前对信号路径充电。

62. 发明授权

US5414055A Coating resin compositions 失效
标题翻译：涂料树脂组合物
公开(公告)号：US5414055A
公开(公告)日：1995-05-09
申请号：US64650
申请日：1993-05-21
申请人： Yoh Sugimura , Motoshi Yabuta , Yoshiyuki Yukawa , Yasuhiro Fujii
发明人： Yoh Sugimura , Motoshi Yabuta , Yoshiyuki Yukawa , Yasuhiro Fujii
IPC分类号： C08G18/62 , C08G18/10 , C08G18/63 , C08G18/72 , C09D175/00 , C09D175/04 , C08F283/04
CPC分类号： C08G18/728 , C08G18/10 , C08G18/633
摘要： (1) A coating resin composition consisting essentially of a self-crosslinking resin (I) having at least one hydroxyl group and at least one blocked isocyanate group in the molecule wherein the resin (I) is prepared by reacting some of the free isocyanate groups of a vinyl polymer (A) having at least two free isocyanate groups in the molecule with some of the hydroxyl groups of a polyolefin resin (B) having at least two hydroxyl groups in the molecule, and subsequently reacting a blocking agent with the remaining free isocyanate groups, and (2) a coating resin composition consisting essentially of a self-crosslinking resin (II) having at least one hydroxyl group and at least one blocked isocyanate group in the molecule wherein the resin (II) is prepared by reacting all free isocyanate groups of a vinyl polymer (C) having at least one free isocyanate group and at least one blocked isocyanate group in the molecule with some of the hydroxyl groups of a polyolefin resin (B) having at least two hydroxyl groups in the molecule.
摘要翻译：（1）一种基本上由分子中具有至少一个羟基和至少一个封端异氰酸酯基的自交联树脂（I）组成的涂料树脂组合物，其中树脂（I）是通过一些游离异氰酸酯基团的分子中具有至少两个游离异氰酸酯基团的乙烯基聚合物（A），其中在分子中具有至少两个羟基的聚烯烃树脂（B）的一些羟基，然后使封闭剂与剩余的游离的异氰酸酯基，和（2）主要由在分子中具有至少一个羟基和至少一个封端的异氰酸酯基的自交联树脂（II）组成的涂料树脂组合物，其中树脂（II）通过使全部自由基在分子中具有至少一个游离异氰酸酯基和至少一个封端异氰酸酯基的乙烯基聚合物（C）的异氰酸酯基团，其中一些聚烯烃树脂（B）的一些羟基具有至少分子中有两个羟基。

63. 发明授权

US5291447A Semiconductor memory device having function of controlling sense amplifiers 失效
标题翻译：具有控制读出放大器功能的半导体存储器件
公开(公告)号：US5291447A
公开(公告)日：1994-03-01
申请号：US921155
申请日：1992-07-29
申请人： Yukinori Kodama , Yasuhiro Fujii
发明人： Yukinori Kodama , Yasuhiro Fujii
IPC分类号： G11C11/409 , G11C7/06 , G11C7/10 , H01L21/8242 , H01L27/10 , H01L27/108 , G11C7/00
CPC分类号： G11C7/1096 , G11C7/065 , G11C7/1078
摘要： A semiconductor memory device includes a memory cell array including a plurality of memory cells provided in the form of a matrix along a plurality of word lines and a plurality of pairs of bit lines, a plurality of sense amplifiers operatively connected to the plurality of pairs of bit lines, and a sense amplifier control unit operatively connected to the plurality of sense amplifiers. When one of the plurality of memory cells is selected and data writing is carried out to the selected memory cell, the sense amplifier control unit selectively inactivates only a sense amplifier corresponding to the selected memory cell among the plurality of sense amplifiers. Thus, it is possible to remove useless dissipation of write current in the data write operation to thereby decrease the dissipated power, while realizing a high speed write operation.
摘要翻译：一种半导体存储器件包括存储单元阵列，该存储单元阵列包括沿着多条字线和多对位线以矩阵形式提供的多个存储器单元，多个读出放大器可操作地连接到多对位线，以及可操作地连接到多个读出放大器的读出放大器控制单元。当选择多个存储单元之一并对所选存储单元执行数据写入时，读出放大器控制单元仅选择性地使仅在多个读出放大器中与所选存储单元相对应的读出放大器失效。因此，在实现高速写入操作的同时，可以在数据写入操作中消除写入电流的无用耗散，从而降低耗散功率。

64. 发明授权

US5242716A Barrier coating process using olefin resin and urethane resin 失效
标题翻译：使用烯烃树脂和URETHANE树脂的阻挡涂层工艺
公开(公告)号：US5242716A
公开(公告)日：1993-09-07
申请号：US750483
申请日：1991-08-27
申请人： Osamu Iwase , Yasuhiro Fujii , Tuguo Nezu
发明人： Osamu Iwase , Yasuhiro Fujii , Tuguo Nezu
IPC分类号： B05D7/00 , B05D7/16 , C09D5/44
CPC分类号： B05D7/58 , B05D7/16 , C09D5/4496 , B05D2202/00 , B05D2451/00 , B05D2503/00 , B05D2504/00 , B05D2507/00
摘要： A process for coating a surface of a substrate containing a metallic member, which comprises first coating a cationic electrodeposition coating paint on the metallic member, then integrating the coated metallic member with a plastic member if required, coating an aqueous barrier coat composed mainly of a composition comprising an olefin resin and a urethane resin, further coating an intermediate coating paint if required, and thereafter coating a top coating paint.
摘要翻译：一种用于涂覆含有金属构件的基材的表面的方法，其包括首先在金属构件上涂覆阳离子电沉积涂料，然后如果需要，将涂覆的金属构件与塑料构件整合，涂覆主要由组合物，其包含烯烃树脂和聚氨酯树脂，如果需要，还涂覆中间涂料涂料，然后涂覆顶涂层。

65. 发明授权

US5037587A Preparation process of polyimide film 失效
标题翻译：聚酰亚胺薄膜的制备工艺
公开(公告)号：US5037587A
公开(公告)日：1991-08-06
申请号：US549149
申请日：1990-07-06
申请人： Masumi Saruwatari , Yasuhiko Ohta , Yasuhiro Fujii , Yasuko Honji , Shoichi Tsuji , Shinobu Moriya
发明人： Masumi Saruwatari , Yasuhiko Ohta , Yasuhiro Fujii , Yasuko Honji , Shoichi Tsuji , Shinobu Moriya
IPC分类号： B29C47/90 , B29C47/88 , B29K79/00 , C08J5/18
CPC分类号： C08J5/18 , B29C47/0021 , B29C47/884 , B29C47/8845 , B29C47/886 , B29C47/887 , B29C47/8875 , C08J2379/08
摘要： In the preparation of a film by melt-extrusion process of thermoplastic polyimide, static charge is applied to a molten film, primary cooling is carried out by adhering the film to a cooling roller having a surface temperature in the range of from the glass transition temperature of said polyimide -50.degree. C. to the glass transition temperature -15.degree. C., the film is successively cooled to 60.degree. C. and less without bringing the film into contact with rollers, and is taken up under tension to give a polyimide film.

66. 发明授权

US4981759A Coating method 失效
标题翻译：涂布方法
公开(公告)号：US4981759A
公开(公告)日：1991-01-01
申请号：US189167
申请日：1988-05-02
申请人： Eisaku Nakatani , Masaru Mitsuji , Yasuhiro Fujii , Katsuya Sera , Yuzo Miyamoto , Masafumi Kume , Tadayoshi Tatsuno , Akimasa Nakahata
发明人： Eisaku Nakatani , Masaru Mitsuji , Yasuhiro Fujii , Katsuya Sera , Yuzo Miyamoto , Masafumi Kume , Tadayoshi Tatsuno , Akimasa Nakahata
IPC分类号： C09D5/44 , C09D5/46
CPC分类号： C09D5/4473 , Y10T428/12569 , Y10T428/31522
摘要： A coating method, which comprises(i) applying to a substrate a multilayer film-forming cationic electrodeposition paint composed of(A) a cationic electrodepositable epoxy resin having a surface tension of 40 to 60 dynes/cm and being able to form a cathodically electrodepositable aqueous bath by neutralization with an acid, and(B) a nonionic film-forming resin having a surface tension of 25 to 45 dynes/cm, the weight ratio of resin (A) to resin (B) being from 60:40 to 98:2 and the surface tension of resin (A) being greater than that of resin (B), and curing the coated film by heating,(ii) applying a water-base or organic solvent-base colored paint as a first top coat, and(iii) applying as a second top coat a powder paint capable of forming a transparent film which may be colored.
摘要翻译：一种涂布方法，其包括（i）向基材施加多层成膜阳离子电沉积涂料，其由（A）表面张力为40至60达因/厘米的阳离子可电沉积环氧树脂组成，并且能够形成阴极电沉积（B）表面张力为25〜45达因/厘米的树脂（A）与树脂（B）的重量比为60:40〜98的非离子性成膜树脂：2，树脂（A）的表面张力大于树脂（B）的表面张力，并且通过加热固化涂膜，（ii）施加水基或有机溶剂基着色涂料作为第一面漆，和（iii）作为第二面漆施加能够形成可以着色的透明膜的粉末涂料。

67. 发明授权

US4861799A Benzoylurea compounds and pesticides containing them 失效
标题翻译：苯甲酰脲化合物和含有它们的农药
公开(公告)号：US4861799A
公开(公告)日：1989-08-29
申请号：US102855
申请日：1987-09-30
申请人： Takahiro Haga , Tadaaki Toki , Toru Koyanagi , Yasuhiro Fujii , Kiyomitsu Yoshida , Osamu Imai
发明人： Takahiro Haga , Tadaaki Toki , Toru Koyanagi , Yasuhiro Fujii , Kiyomitsu Yoshida , Osamu Imai
IPC分类号： A01N43/40 , A01N47/34 , A01N47/36 , A01P7/04 , C07C275/54 , C07D213/64 , C07D213/643 , C07D213/70 , C07D213/74 , C07D213/75 , C07D333/38
CPC分类号： C07D213/643 , A01N47/34 , A01N47/36 , C07C275/54 , C07D213/70 , C07D213/74 , C07D213/75 , C07D333/38
摘要： A benzoylurea compound having the formula: ##STR1## wherein each of X.sub.1 and X.sub.2 is a hydrogen atom, a halogen atom or a methyl group, provided that X.sub.1 and X.sub.2 are not simultaneously hydrogen atoms, Y is independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted by halogen, a --CO.sub.2 R.sub.1 group wherein R.sub.1 is a hydrogen atom, a cation or an alkyl group, or a --OR.sub.1 group wherein R.sub.1 is as defined above, A.sub.1 is .dbd.N--or ##STR2## wherein Y is as defined above, W is an oxygen atom, a sulfur atom or ##STR3## wherein R.sub.1 is as defined above, k is an integer of from 1 to 3, l is 0 or 1, and Ar is ##STR4## wherein Z is independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted by halogen, an alkoxy group which may be substituted by halogen, a nitro group, a cyano group or a --S(O).sub.n R.sub.2 group wherein R.sub.2 is an alkyl group which may be substituted by halogen and n is 0, 1 or 2, A.sub.2 is --S--, ##STR5## wherein Z is as defined above, or ##STR6## wherein Z is as defined above, and m is an integer of from 1 to 3, or a salt thereof.
摘要翻译：具有下式的苯甲酰脲化合物：其中X1和X2各自为氢原子，卤素原子或甲基，条件是X1和X2不同时为氢原子，Y独立地为氢原子，卤素原子，可以被卤素取代的烷基，其中R 1是氢原子的-CO 2 R 1基团，阳离子或烷基或-OR 1基团，其中R 1如上所定义，A 1 = N-或其中Y如上所定义，W是氧原子，硫原子或其中R 1如上定义，k是1至3的整数，l是0或1，Ar是< 其中Z独立地为氢原子，卤素原子，可被卤素取代的烷基，可被卤素取代的烷氧基，硝基，氰基或-S（O）nR 2基团）其中R 2是可以被卤素取代的烷基，n是0,1或2，A 2是-S-，其中Z如上所定义，或者其中Z如上定义 m为1〜3的整数，或其盐。

68. 发明授权

US4592025A Information storing circuit using blown and unblown fuses 失效
标题翻译：信息存储电路采用熔断和未熔丝保险丝
公开(公告)号：US4592025A
公开(公告)日：1986-05-27
申请号：US598742
申请日：1984-04-10
申请人： Yoshihiro Takemae , Junji Ogawa , Yasuhiro Fujii , Tomio Nakano , Takeo Tatematsu , Takashi Horii , Masao Nakano , Norihisa Tsuge, deceased
发明人： Yoshihiro Takemae , Junji Ogawa , Yasuhiro Fujii , Tomio Nakano , Takeo Tatematsu , Takashi Horii , Masao Nakano , Norihisa Tsuge, deceased
IPC分类号： G11C17/14 , G11C17/16 , G11C17/18 , G11C29/00 , G11C29/04 , G11C7/00
CPC分类号： G11C29/785 , G11C17/16 , G11C17/18
摘要： A circuit for storing information by blown and unblown fuses has at least two fuses per bit and an information output circuit. The information output circuit discriminates between the state in which all the fuses are unblown and the state in which at least one of the fuses is blown, and provides an output in accordance with the result of the discrimination as stored information.
摘要翻译：通过熔断和未熔断保险丝存储信息的电路每位具有至少两个熔丝和一个信息输出电路。信息输出电路鉴别所有保险丝未被吹出的状态和至少一个保险丝被熔断的状态，并根据鉴别结果提供输出作为存储信息。

69. 发明申请

US20140229452A1 STORED DATA DEDUPLICATION METHOD, STORED DATA DEDUPLICATION APPARATUS, AND DEDUPLICATION PROGRAM 有权
标题翻译：存储数据分类方法，存储数据分类装置和编码程序
公开(公告)号：US20140229452A1
公开(公告)日：2014-08-14
申请号：US14349561
申请日：2011-10-06
申请人： Susumu Serita , Yasuhiro Fujii
发明人： Susumu Serita , Yasuhiro Fujii
IPC分类号： G06F17/30
CPC分类号： G06F17/30156 , G06F3/0641 , G06F11/1453
摘要： Method of dividing data to be stored in storage device into data fragments; recording the data by using configurations of divided data fragments; judging whether identical data fragments exist in data fragments; when it is judged that identical data fragments exist, storing one of the identical data fragments in storage area of the storage device, and generating and recording data-fragment attribute information indicating an attribute unique to the data fragment stored; upon receipt of request to read data stored in the storage area of the storage device, acquiring the configurations of the data fragments forming the read-target data, reading the corresponding data fragments from the storage area of the storage device, and restoring the data; acquiring and coupling the recorded data fragments to generate concatenation target data targeted for judgment on whether chunk concatenation is possible or not, and detecting whether the concatenation target data has a repeated data pattern
摘要翻译：将要存储在存储设备中的数据划分成数据片段的方法; 通过使用分割数据片段的配置来记录数据; 判断数据片段中是否存在相同的数据片段; 当存在相同的数据片段时，将相同数据片段中的一个存储在存储装置的存储区域中，并且生成和记录指示存储的数据片段唯一的属性的数据片段属性信息; 在接收到读取存储在存储装置的存储区域中的数据的请求时，获取构成读取对象数据的数据片段的配置，从存储装置的存储区域读取相应的数据片段，并恢复数据; 获取和耦合记录的数据片段以产生目标的连接目标数据，用于判断是否可以进行组块级联，以及检测级联目标数据是否具有重复的数据模式

70. 发明授权

US08288232B2 Manufacturing method of semiconductor device and semiconductor device 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US08288232B2
公开(公告)日：2012-10-16
申请号：US12687110
申请日：2010-01-13
申请人： Yasuhiro Fujii , Kazumasa Yonekura , Tatsunori Kaneoka
发明人： Yasuhiro Fujii , Kazumasa Yonekura , Tatsunori Kaneoka
IPC分类号： H01L21/8234
CPC分类号： H01L21/823462 , H01L21/823418 , H01L21/823456 , H01L21/823481 , H01L29/0653 , H01L29/42364
摘要： An improvement is provided in a manufacturing yield of a semiconductor device including transistors in which gate insulating films have different thicknesses. After a high-breakdown-voltage insulating film is formed over a silicon substrate, a surface of the high-breakdown-voltage insulating film is abraded for a reduction in the thickness thereof so that a middle-breakdown-voltage insulating film is formed to be adjacent to the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed by a thermal oxidation method so as to extend from an inside of the main surface of the silicon substrate to an outside thereof. The middle-breakdown-voltage insulating film is formed so as to be thinner than the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed as the gate insulating film of a high-breakdown-voltage MIS transistor, while the middle-breakdown-voltage insulating film is formed as the gate insulating film of a middle-breakdown-voltage MIS transistor.
摘要翻译：提供一种半导体器件的制造成品率的提高，该半导体器件包括其中栅绝缘膜具有不同厚度的晶体管。在硅衬底上形成高耐压绝缘膜之后，高耐压绝缘膜的表面被磨损以减小其厚度，使得中间击穿电压绝缘膜形成为邻近高耐压绝缘膜。高耐压绝缘膜通过热氧化法形成，以从硅衬底的主表面的内部延伸到其外部。中间击穿电压绝缘膜形成为比高击穿电压绝缘膜薄。高击穿电压绝缘膜形成为高击穿电压MIS晶体管的栅极绝缘膜，而中间击穿电压绝缘膜形成为中间击穿电压MIS晶体管的栅极绝缘膜。

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