专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US08912078B1 Dicing wafers having solder bumps on wafer backside 有权
标题翻译：切割晶片在晶片背面具有焊料凸块
公开(公告)号：US08912078B1
公开(公告)日：2014-12-16
申请号：US14254632
申请日：2014-04-16
申请人： Wei-Sheng Lei , James S. Papanu , Aparna Iyer , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Aparna Iyer , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78 , H01L21/683
CPC分类号： H01L21/78 , H01L21/268 , H01L21/3065 , H01L21/6836 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0401 , H01L2224/05568 , H01L2224/0557 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/12041 , H01L2224/11 , H01L2924/00
摘要： Approaches for hybrid laser scribe and plasma etch dicing process for a wafer having backside solder bumps are described. For example, a method of dicing a semiconductor wafer having integrated circuits on a front side thereof and corresponding arrays of metal bumps on a backside thereof involves applying a dicing tape to the backside of the semiconductor wafer, the dicing tape covering the arrays of metal bumps. The method also involves, subsequently, forming a mask on the front side of the semiconductor wafer, the mask covering the integrated circuits. The method also involves forming scribe lines on the front side of the semiconductor wafer with a laser scribing process, the scribe lines formed in the mask and between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, the mask protecting the integrated circuits during the plasma etching.
摘要翻译：描述了具有背面焊料凸块的晶片的混合激光划片和等离子体蚀刻切割工艺的方法。例如，在其前侧具有集成电路的半导体晶片的切割方法和背面的金属凸块的相应阵列包括在半导体晶片的背面施加切割带，该切割带覆盖金属凸块的阵列。该方法还包括在半导体晶片的正面上形成掩模，该掩模覆盖集成电路。该方法还涉及通过激光划线工艺在半导体晶片的正面上形成刻划线，在掩模中形成划线并在集成电路之间。该方法还包括通过划线等离子体蚀刻半导体晶片以对集成电路进行分离，掩模在等离子体蚀刻期间保护集成电路。

62. 发明授权

US08912075B1 Wafer edge warp supression for thin wafer supported by tape frame 有权
标题翻译：用于由胶带框支撑的薄晶片的晶片边缘翘曲
公开(公告)号：US08912075B1
公开(公告)日：2014-12-16
申请号：US14265108
申请日：2014-04-29
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/301 , H01L21/78 , H01L21/673 , H01L21/683
CPC分类号： H01L21/6836 , B32B3/266 , B32B37/0076 , B32B37/22 , B32B2307/202 , B32B2457/14 , H01L21/3065 , H01L21/3085 , H01L21/67092 , H01L21/67132 , H01L21/78 , H01L2221/68327 , H01L2221/6834
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of reducing edge warping in a supported semiconductor wafer involves adhering a backside of a semiconductor wafer to an inner portion of a carrier tape of a substrate carrier comprising a tape frame mounted above the carrier tape. The method also involves adhering an adhesive tape to a front side of the semiconductor wafer and to at least a portion of the substrate carrier. The adhesive tape includes an opening exposing an inner region of the front side of the semiconductor wafer.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个示例中，减少支撑的半导体晶片中的边缘翘曲的方法包括将半导体晶片的背面粘附到包括安装在载带上方的带框架的基板载体的载带的内部。该方法还包括将粘合带粘附到半导体晶片的正面以及衬底载体的至少一部分。胶带包括露出半导体晶片正面的内部区域的开口。

63. 发明申请

US20170256500A1 HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 有权
公开(公告)号：US20170256500A1
公开(公告)日：2017-09-07
申请号：US15060224
申请日：2016-03-03
申请人： Jungrae Park , Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
IPC分类号： H01L23/544 , B23K10/00 , B23K26/0622 , H01L21/78
CPC分类号： H01L23/544 , A47G19/22 , A47G19/2272 , B23K10/003 , B23K26/0624 , B65D47/244 , B65D47/32 , H01L21/78 , H01L2223/5446
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

64. 发明授权

US09443765B2 Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing 有权
公开(公告)号：US09443765B2
公开(公告)日：2016-09-13
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/82 , H01L21/67 , H01L21/306 , H01L21/56 , H01L21/683 , H01L23/00
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.

65. 发明申请

US20160197015A1 HYBRID WAFER DICING APPROACH USING A POLYGON SCANNING-BASED LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 审中-公开
标题翻译：使用基于多边形扫描的激光扫描过程和等离子体蚀刻过程的混合波形绘制方法
公开(公告)号：US20160197015A1
公开(公告)日：2016-07-07
申请号：US14589600
申请日：2015-01-05
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/268 , H01L21/308
CPC分类号： H01L21/78 , H01L21/0275 , H01L21/3086 , H01L21/67092 , H01L21/67207
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the plurality of integrated circuits. The mask is then patterned with a polygon scanning-based laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the plurality of integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the plurality of integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护多个集成电路的层构成。然后通过基于多边形扫描的激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露多个集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对多个集成电路进行分割。

66. 发明授权

US09224650B2 Wafer dicing from wafer backside and front side 有权
标题翻译：从晶片背面和正面进行晶片切割
公开(公告)号：US09224650B2
公开(公告)日：2015-12-29
申请号：US14103534
申请日：2013-12-11
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/46 , H01L21/30 , H01L21/78 , H01L21/308 , B23K26/32 , B23K26/36 , B23K26/40 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/78 , B23K26/32 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/08 , B23K2103/172 , B23K2103/42 , B23K2103/50 , B23K2103/56 , H01L21/3081 , H01L21/31127 , H01L21/3213 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2221/6834 , H01L2223/54433 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.
摘要翻译：描述了用于背面激光划片加正面激光划线和等离子体蚀刻切割晶片或衬底的方法。例如，在其前侧划分具有多个集成电路的半导体晶片的方法，其背面上的金属化包括用第一激光划线工艺在背面上图案化金属化，以在第一激光划线工艺上提供第一多个激光划线背面。该方法还涉及在前侧形成掩模。该方法还包括利用第二激光划线工艺从正面图案化掩模，以提供具有暴露在集成电路之间的半导体晶片的区域的第二多个划线的图案化掩模，其中第二多个划线是与第一组多个划线对准。该方法还包括通过第二多个划线对等离子体蚀刻半导体晶片以对集成电路进行分离。

67. 发明授权

US09112050B1 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing 有权
标题翻译：切割胶带通过晶片框架进行热管理，支持等离子体切割期间的环形冷却
公开(公告)号：US09112050B1
公开(公告)日：2015-08-18
申请号：US14276683
申请日：2014-05-13
申请人： Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/78
CPC分类号： H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/67069 , H01L21/67092 , H01L21/67109 , H01L21/67207 , H01L21/78
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves introducing a substrate supported by a substrate carrier into a plasma etch chamber. The substrate has a patterned mask thereon covering integrated circuits and exposing streets of the substrate. The substrate carrier has a backside. The method also involves supporting at least a portion of the backside of the substrate carrier on a chuck of the plasma etch chamber. The method also involves cooling substantially all of the backside of the substrate carrier, the cooling involving cooling at least a first portion of the backside of the substrate carrier by the chuck. The method also involves plasma etching the substrate through the streets to singulate the integrated circuits while performing the cooling substantially all of the backside of the substrate carrier.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括将由衬底载体支撑的衬底引入等离子体蚀刻室。衬底上具有图案化掩模，其覆盖集成电路并暴露衬底的街道。衬底载体具有背面。该方法还涉及将衬底载体的背侧的至少一部分支撑在等离子体蚀刻室的卡盘上。该方法还包括冷却基板载体的基本上所有背面，冷却涉及通过卡盘冷却基板载体的背面的至少第一部分。该方法还涉及通过街道等离子体蚀刻衬底以对集成电路进行单片化，同时基本上全部衬底载体的背面进行冷却。

68. 发明申请

US20150214111A1 WATER SOLUBLE MASK FORMATION BY DRY FILM VACUUM LAMINATION FOR LASER AND PLASMA DICING 审中-公开
标题翻译：水溶性膜由干膜真空层压制成，用于激光和等离子体处理
公开(公告)号：US20150214111A1
公开(公告)日：2015-07-30
申请号：US14590910
申请日：2015-01-06
申请人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Prabhat Kumar , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/683 , H01L21/306 , H01L21/56
CPC分类号： H01L21/82 , H01L21/30604 , H01L21/561 , H01L21/67207 , H01L21/6836 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/743 , H01L2224/16145 , H01L2224/27001 , H01L2224/27436 , H01L2224/32145 , H01L2224/73104 , H01L2224/83191 , H01L2924/12042 , H01L2924/00
摘要： Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.
摘要翻译：描述了用于切割包括多个集成电路（IC）的半导体晶片的方法和系统。在一个实施方案中，一种方法包括将粘合带粘附到薄水溶性干膜上。该方法包括将粘附到粘合带上的薄水溶性干膜涂覆在半导体晶片的表面上。该方法包括从薄水溶性干膜中去除粘合带。用激光刻划工艺对薄水溶性干膜进行图案化，使IC之间的半导体晶片的区域暴露。该方法包括通过图案化的薄水溶性干膜中的间隙蚀刻半导体晶片，以及去除薄水溶性干膜。

69. 发明授权

US09041198B2 Maskless hybrid laser scribing and plasma etching wafer dicing process 有权
标题翻译：无掩模混合激光划线和等离子体蚀刻晶圆切片工艺
公开(公告)号：US09041198B2
公开(公告)日：2015-05-26
申请号：US14060005
申请日：2013-10-22
申请人： Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
IPC分类号： H01L23/34 , H01L21/78 , H01L21/3065 , B23K26/40
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0624 , B23K26/50 , B23K26/53 , B23K26/57 , B23K2101/40 , B23K2103/56 , H01L21/3065 , H01L21/82
摘要： Maskless hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface with a plurality of integrated circuits thereon and having a passivation layer disposed between and covering metal pillar/solder bump pairs of the integrated circuits involves laser scribing, without the use of a mask layer, the passivation layer to provide scribe lines exposing the semiconductor wafer. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, wherein the passivation layer protects the integrated circuits during at least a portion of the plasma etching. The method also involves thinning the passivation layer to partially expose the metal pillar/solder bump pairs of the integrated circuits.
摘要翻译：描述了无掩模混合激光划线和等离子体蚀刻晶片切割工艺。在一个示例中，将具有其上具有多个集成电路的前表面的半导体晶片切割并且具有设置在其上并且覆盖集成电路的金属柱/焊料凸块对之间的钝化层的方法包括激光划线，而不使用掩模层，钝化层以提供暴露半导体晶片的划线。该方法还包括通过划线等离子体蚀刻半导体晶片以对集成电路进行分离，其中钝化层在等离子体蚀刻的至少一部分期间保护集成电路。该方法还涉及使钝化层变薄以部分地暴露集成电路的金属柱/焊料凸块对。

70. 发明申请

US20150111364A1 MASKLESS HYBRID LASER SCRIBING AND PLASMA ETCHING WAFER DICING PROCESS 审中-公开
标题翻译：无缝混合激光扫描和等离子体蚀刻抛光工艺
公开(公告)号：US20150111364A1
公开(公告)日：2015-04-23
申请号：US14454656
申请日：2014-08-07
申请人： Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , James S. Papanu , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/3065
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0624 , B23K26/50 , B23K26/53 , B23K26/57 , B23K2101/40 , B23K2103/56 , H01L21/3065 , H01L21/82
摘要： Maskless hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface with a plurality of integrated circuits thereon and having a passivation layer disposed between and covering metal pillar/solder bump pairs of the integrated circuits involves laser scribing, without the use of a mask layer, the passivation layer to provide scribe lines exposing the semiconductor wafer. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, wherein the passivation layer protects the integrated circuits during at least a portion of the plasma etching. The method also involves thinning the passivation layer to partially expose the metal pillar/solder bump pairs of the integrated circuits.
摘要翻译：描述了无掩模混合激光划线和等离子体蚀刻晶片切割工艺。在一个示例中，将具有其上具有多个集成电路的前表面的半导体晶片切割并且具有设置在其上并且覆盖集成电路的金属柱/焊料凸块对之间的钝化层的方法包括激光划线，而不使用掩模层，钝化层以提供暴露半导体晶片的划线。该方法还包括通过划线等离子体蚀刻半导体晶片以对集成电路进行分离，其中钝化层在等离子体蚀刻的至少一部分期间保护集成电路。该方法还涉及使钝化层变薄以部分地暴露集成电路的金属柱/焊料凸块对。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式