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61. 发明授权

US08558384B2 Interconnect structure containing various capping materials for electrical fuse and other related applications 有权
标题翻译：互连结构，包含用于电熔丝和其他相关应用的各种封盖材料
公开(公告)号：US08558384B2
公开(公告)日：2013-10-15
申请号：US13537879
申请日：2012-06-29
申请人： Louis L. Hsu , William R. Tonti , Chih-Chao Yang
发明人： Louis L. Hsu , William R. Tonti , Chih-Chao Yang
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/5256 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.
摘要翻译：为包含用于电熔丝和其它相关应用的各种封盖材料的互连结构提供了一种设计结构。该结构包括具有第一界面结构的第一互连结构和与第一结构相邻的第二互连结构。第二互连结构具有与第一界面结构不同的第二界面结构。

62. 发明授权

US07956466B2 Structure for interconnect structure containing various capping materials for electrical fuse and other related applications 有权
标题翻译：包含用于电熔丝和其他相关应用的各种封盖材料的互连结构的结构
公开(公告)号：US07956466B2
公开(公告)日：2011-06-07
申请号：US12118186
申请日：2008-05-09
申请人： Louis L. Hsu , William R. Tonti , Chih-Chao Yang
发明人： Louis L. Hsu , William R. Tonti , Chih-Chao Yang
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L27/10 , H01L29/73 , H01L29/74
CPC分类号： H01L23/5256 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.
摘要翻译：为包含用于电熔丝和其它相关应用的各种封盖材料的互连结构提供了一种设计结构。该结构包括具有第一界面结构的第一互连结构和与第一结构相邻的第二互连结构。第二互连结构具有与第一界面结构不同的第二界面结构。

63. 发明授权

US07840916B2 Structure for on-chip electromigration monitoring system 有权
标题翻译：片上电迁移监控系统结构
公开(公告)号：US07840916B2
公开(公告)日：2010-11-23
申请号：US11985966
申请日：2007-11-19
申请人： Louis L. Hsu , Hayden C. Cranford, Jr. , Oleg Gluschenkov , James S. Mason , Michael A. Sorna , Chih-Chao Yang
发明人： Louis L. Hsu , Hayden C. Cranford, Jr. , Oleg Gluschenkov , James S. Mason , Michael A. Sorna , Chih-Chao Yang
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G01R31/2858
摘要： A design structure embodied in a machine readable medium used in a design process can include apparatus of a semiconductor chip operable to detect an increase in resistance of a monitored element of the semiconductor chip. The design structure can include, for example, a resistive voltage divider circuit operable to output a plurality of reference voltages having different values. A plurality of comparators in the semiconductor chip may be coupled to receive the reference voltages and a monitored voltage representative of a resistance of the monitored element. Each of the comparators may produce an output indicating whether the monitored voltage exceeds the reference voltages, so that the resistance value of the monitored element may be precisely determined.
摘要翻译：体现在设计过程中使用的机器可读介质中的设计结构可以包括半导体芯片的装置，其可操作以检测半导体芯片的被监测元件的电阻的增加。该设计结构可以包括例如可操作以输出具有不同值的多个参考电压的电阻分压器电路。可以将半导体芯片中的多个比较器耦合以接收参考电压和表示所监视元件的电阻的监视电压。每个比较器可以产生指示监视的电压是否超过参考电压的输出，使得可以精确地确定被监视元件的电阻值。

64. 发明申请

US20090278228A1 DESIGN STRUCTURE FOR INTERCONNECT STRUCTURE CONTAINING VARIOUS CAPPING MATERIALS FOR ELECTRICAL FUSE AND OTHER RELATED APPLICATIONS 有权
标题翻译：用于电气保险丝和其他相关应用的各种封装材料的互连结构设计结构
公开(公告)号：US20090278228A1
公开(公告)日：2009-11-12
申请号：US12118186
申请日：2008-05-09
申请人： Louis L. Hsu , William R. Tonti , Chih-Chao Yang
发明人： Louis L. Hsu , William R. Tonti , Chih-Chao Yang
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.
摘要翻译：为包含用于电熔丝和其它相关应用的各种封盖材料的互连结构提供了一种设计结构。该结构包括具有第一界面结构的第一互连结构和与第一结构相邻的第二互连结构。第二互连结构具有与第一界面结构不同的第二界面结构。

65. 发明授权

US08232649B2 Structure for interconnect structure containing various capping materials for electrical fuse and other related applications 有权
标题翻译：包含用于电熔丝和其他相关应用的各种封盖材料的互连结构的结构
公开(公告)号：US08232649B2
公开(公告)日：2012-07-31
申请号：US13052662
申请日：2011-03-21
申请人： Louis L. Hsu , William R. Tonti , Chih-Chao Yang
发明人： Louis L. Hsu , William R. Tonti , Chih-Chao Yang
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/58 , H01L23/62 , H01L29/00 , H01L27/10 , H01L29/73 , H01L29/74
CPC分类号： H01L23/5256 , H01L21/76829 , H01L21/76838 , H01L21/76849 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.
摘要翻译：为包含用于电熔丝和其它相关应用的各种封盖材料的互连结构提供了一种设计结构。该结构包括具有第一界面结构的第一互连结构和与第一结构相邻的第二互连结构。第二互连结构具有与第一界面结构不同的第二界面结构。

66. 发明申请

US20100001253A1 Method for delineation of phase change memory cell via film resistivity modification 有权
标题翻译：通过膜电阻率修饰来描绘相变记忆单元的方法
公开(公告)号：US20100001253A1
公开(公告)日：2010-01-07
申请号：US12492618
申请日：2009-06-26
申请人： John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
发明人： John Christopher Arnold , Lawrence Alfred Clevenger , Timothy Joseph Dalton , Michael Christopher Gaidis , Louis L. Hsu , Carl John Radens , Keith Kwong Hon Wong , Chih-Chao Yang
IPC分类号： H01L45/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.
摘要翻译： PCM单元结构包括第一电极，相变元件和第二电极，其中相变元件插入在第一电极和第二电极之间，并且仅第一电极的周边边缘与相变元件接触，减少相变元件与第一电极之间的接触面积，从而增加通过相变元件的电流密度，并有效地在较低的电流电平和降低的编程功率下引起相变。

67. 发明授权

US08624395B2 Redundancy design with electro-migration immunity and method of manufacture 有权
标题翻译：具有电迁移免疫力的冗余设计和制造方法
公开(公告)号：US08624395B2
公开(公告)日：2014-01-07
申请号：US13400900
申请日：2012-02-21
申请人： Louis L. Hsu , Conal E. Murray , Ping-Chuan Wang , Chih-Chao Yang
发明人： Louis L. Hsu , Conal E. Murray , Ping-Chuan Wang , Chih-Chao Yang
IPC分类号： H01L23/48
CPC分类号： H01L21/76816 , H01L21/76838 , H01L21/76847 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： An IC interconnect for high direct current (DC) that is substantially immune to electro-migration (EM) damage, and a method of manufacture of the IC interconnect are provided. A structure includes a cluster-of-via structure at an intersection between inter-level wires. The cluster-of-via structure includes a plurality of vias each of which are filled with a metal and lined with a liner material. At least two adjacent of the vias are in contact with one another and the plurality of vias lowers current loading between the inter-level wires.
摘要翻译：提供了基本上不受电迁移（EM）损害的高直流（DC）的IC互连以及IC互连的制造方法。一种结构包括层间电线之间的交叉处的通孔簇结构。通孔结构包括多个通孔，每个通孔填充有金属并衬有衬垫材料。至少两个相邻的通孔彼此接触并且多个通孔降低了层间电线之间的电流负载。

68. 发明授权

US08487696B2 Modularized three-dimensional capacitor array 有权
标题翻译：模块化三维电容阵列
公开(公告)号：US08487696B2
公开(公告)日：2013-07-16
申请号：US13438230
申请日：2012-04-03
申请人： Louis L. Hsu , Xu Ouyang , Chih-Chao Yang
发明人： Louis L. Hsu , Xu Ouyang , Chih-Chao Yang
IPC分类号： G01R31/28 , H03K17/687
CPC分类号： H01L28/40 , H01L22/14 , H01L22/22 , H01L22/34 , H01L23/5223 , H01L27/0688 , H01L27/0805 , H01L28/60 , H01L2924/0002 , Y10T307/865 , H01L2924/00
摘要： A modularized capacitor array includes a plurality of capacitor modules. Each capacitor module includes a capacitor and a switching device that is configured to electrically disconnect the capacitor. The switching device includes a sensing unit configured to detect the level of leakage of the capacitor so that the switching device disconnects the capacitor electrically if the leakage current exceeds a predetermined level. Each capacitor module can include a single capacitor plate, two capacitor plates, or more than two capacitor plates. The leakage sensors and switching devices are employed to electrically disconnect any capacitor module of the capacitor array that becomes leaky, thereby protecting the capacitor array from excessive electrical leakage.
摘要翻译：模块化电容器阵列包括多个电容器模块。每个电容器模块包括电容器和被配置为电气断开电容器的开关装置。开关装置包括：感测单元，被配置为检测电容器的泄漏电平，使得如果泄漏电流超过预定电平，则开关装置电连接电容器。每个电容器模块可以包括单个电容器板，两个电容器板或多于两个的电容器板。泄漏传感器和开关装置用于电气断开任何电容器阵列的电容器模块，从而保护电容器阵列免于漏电。

69. 发明授权

US08471356B2 Programmable anti-fuse structures with conductive material islands 失效
标题翻译：具有导电材料岛的可编程抗熔丝结构
公开(公告)号：US08471356B2
公开(公告)日：2013-06-25
申请号：US12761780
申请日：2010-04-16
申请人： Kangguo Cheng , Louis L. Hsu , William R. Tonti , Chih-Chao Yang
发明人： Kangguo Cheng , Louis L. Hsu , William R. Tonti , Chih-Chao Yang
IPC分类号： G06F17/50 , H01L21/768 , H01L23/525
CPC分类号： H01L23/5252 , G06F17/505 , H01L2924/0002 , H01L2924/00
摘要： Voltage programmable anti-fuse structures and methods are provided that include at least one conductive material island atop a dielectric surface that is located between two adjacent conductive features. In one embodiment, the anti-fuse structure includes a dielectric material having at least two adjacent conductive features embedded therein. At least one conductive material island is located on an upper surface of the dielectric material that is located between the at least two adjacent conductive features. A dielectric capping layer is located on exposed surfaces of the dielectric material, the at least one conductive material island and the at least two adjacent conductive features. When the anti-fuse structure is in a programmed state, a dielectric breakdown path is present in the dielectric material that is located beneath the at least one conductive material island which conducts electrical current to electrically couple the two adjacent conductive features.
摘要翻译：提供了电压可编程的抗熔丝结构和方法，其包括位于介于两个相邻导电特征之间的电介质表面上的至少一个导电材料岛。在一个实施例中，反熔丝结构包括具有嵌入其中的至少两个相邻导电特征的电介质材料。至少一个导电材料岛位于介电材料的位于至少两个相邻导电特征之间的上表面上。电介质覆盖层位于电介质材料的暴露表面上，至少一个导电材料岛和至少两个相邻的导电特征。当反熔丝结构处于编程状态时，介电击穿路径存在于介电材料中，介电材料位于至少一个导电材料岛之下，该导电材料岛传导电流以电耦合两个相邻导电特征。

70. 发明授权

US08138603B2 Redundancy design with electro-migration immunity 有权
标题翻译：具有电迁移免疫力的冗余设计
公开(公告)号：US08138603B2
公开(公告)日：2012-03-20
申请号：US12115817
申请日：2008-05-06
申请人： Louis L. Hsu , Conal E. Murray , Ping-Chuan Wang , Chih-Chao Yang
发明人： Louis L. Hsu , Conal E. Murray , Ping-Chuan Wang , Chih-Chao Yang
IPC分类号： H01L23/52
CPC分类号： H01L21/76816 , H01L21/76838 , H01L21/76847 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： An IC interconnect for high direct current (DC) that is substantially immune to electro-migration (EM) damage, a design structure of the IC interconnect and a method of manufacture of the IC interconnect is provided. The structure has electro-migration immunity and redundancy of design, which includes a plurality of wires laid out in parallel and each of which are coated with a liner material. Two adjacent of the wires are physically contacted to each other.
摘要翻译：提供了基本上不受电迁移（EM）损害的高直流（DC）的IC互连，提供IC互连的设计结构和IC互连的制造方法。该结构具有电迁移免疫性和设计冗余性，其包括并列布置的多根线，并且每条线都涂有衬里材料。电线的两个相互物理接触。

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