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61. 发明申请

US20080060759A1 Electron beam enhanced surface wave plasma source 有权
标题翻译：电子束增强表面波等离子体源
公开(公告)号：US20080060759A1
公开(公告)日：2008-03-13
申请号：US11518884
申请日：2006-09-12
申请人： Lee Chen , Paul Moroz
发明人： Lee Chen , Paul Moroz
IPC分类号： C23F1/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/3233
摘要： A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma.
摘要翻译：描述了一种等离子体处理系统，用于在半导体器件制造期间使用诸如径向线槽天线（RLSA）的表面波等离子体（SWP）源来产生具有弹道电子束的等离子体。天线包括谐振器板，其具有耦合到谐振器板的表面的部分打开的导电层。例如，导电层形成在谐振器板和等离子体之间的界面处。

62. 发明申请

US20080032507A1 Method of treating a mask layer prior to performing an etching process 有权
标题翻译：在进行蚀刻处理之前处理掩模层的方法
公开(公告)号：US20080032507A1
公开(公告)日：2008-02-07
申请号：US11499680
申请日：2006-08-07
申请人： Peter L.G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
发明人： Peter L.G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
IPC分类号： H01L21/461
CPC分类号： H01L21/0273 , H01J37/32027 , H01J37/32082 , H01L21/0337
摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an oxygen-containing plasma or halogen-containing plasma or a noble gas plasma or a combination of two or more thereof prior to proceeding with the etching process.
摘要翻译：描述了在蚀刻下面的薄膜之前对掩模层进行预处理的方法。使用通过弹道电子束增强的等离子体蚀刻诸如电介质膜的薄膜。为了减少图案定义的损失，例如线边缘粗糙度效应，在进行处理之前，用含氧等离子体或含卤素的等离子体或惰性气体等离子体或其两种或更多种的组合处理掩模层蚀刻工艺。

63. 发明申请

US20080029483A1 Method of treating a mask layer prior to performing an etching process 有权
标题翻译：在进行蚀刻处理之前处理掩模层的方法
公开(公告)号：US20080029483A1
公开(公告)日：2008-02-07
申请号：US11499679
申请日：2006-08-07
申请人： Peter L.G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
发明人： Peter L.G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
IPC分类号： H05H1/24 , B05D5/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/0273 , H01J37/3233 , H01L21/0337
摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an electron beam in the absence of an atomic halogen specie prior to proceeding with the etching process.
摘要翻译：描述了在蚀刻下面的薄膜之前对掩模层进行预处理的方法。使用通过弹道电子束增强的等离子体蚀刻诸如电介质膜的薄膜。为了减少诸如线边缘粗糙度效应的图案定义的损失，在进行蚀刻工艺之前，在没有原子卤素物质的情况下用电子束处理掩模层。

64. 发明申请

US20070271598A1 Systems and methods for user access authentication based on network access point 有权
标题翻译：基于网络接入点的用户接入认证系统和方法
公开(公告)号：US20070271598A1
公开(公告)日：2007-11-22
申请号：US11435043
申请日：2006-05-16
申请人： Lee Chen , John Chiong , Yang Yu
发明人： Lee Chen , John Chiong , Yang Yu
IPC分类号： H04L9/32 , G06F15/16 , G06F12/14 , H04L9/00 , H04K1/00 , G06K9/00 , G06F17/00 , G06F17/30 , G06F9/00 , G06F12/00 , G06F13/00 , G06F7/04 , G06F7/58 , G06K19/00 , G11C7/00
CPC分类号： H04L63/08 , G11C7/24 , H04L63/107 , H04W12/06 , H04W12/08
摘要： Systems and methods of authenticating user access based on an access point to a secure data network include a secure data network having a plurality of a network access points serving as entry points for a user to access the secure data network using a user device. The user is associated with a user identity, each network access point with a network access point identity. The user uses a user device to send an access request, requesting access to the secure data network, to the network access point, which then sends an authentication request to an identity server. The identity server processes the authentication request, by validating the combination of the user identity and the network access point identity, and responds with an authentication response, granting or denying access, as communicated to the user device via an access response. The secure data network may comprise an application level secure data network, in which the user uses the user device to request access to a network application. Furthermore, the identity server may validate the combined user identity and network access point identity data in conjunction with time information, access allowance data, and/or traffic volume data.
摘要翻译：基于对安全数据网络的接入点认证用户接入的系统和方法包括具有多个网络接入点的安全数据网络，该网络接入点用作用户使用用户设备访问安全数据网络的入口点。用户与用户身份相关联，每个网络接入点具有网络接入点身份。用户使用用户设备向网络接入点发送访问安全数据网络的访问请求，网络接入点然后向认证服务器发送认证请求。身份服务器通过验证用户身份和网络接入点身份的组合来处理身份验证请求，并通过访问响应传达给用户设备的认证响应，授予或拒绝访问进行响应。安全数据网络可以包括应用级安全数据网络，其中用户使用用户设备来请求对网络应用的访问。此外，身份服务器可以结合时间信息，访问允许数据和/或业务量数据来验证组合的用户身份和网络接入点身份数据。

65. 发明申请

US20070195792A1 System and method for an adaptive TCP SYN cookie with time validation 有权
标题翻译：具有时间验证的自适应TCP SYN cookie的系统和方法
公开(公告)号：US20070195792A1
公开(公告)日：2007-08-23
申请号：US11358245
申请日：2006-02-21
申请人： Lee Chen , Ronald Szeto , Shih-Tsung Hwang
发明人： Lee Chen , Ronald Szeto , Shih-Tsung Hwang
IPC分类号： H04L12/56
CPC分类号： H04L47/10 , H04L63/1458
摘要： Provided is a method and system for TCP SYN cookie validation. The method includes receiving a session SYN packet by a TCP session setup module of a host server, generating a transition cookie including a time value representing the actual time, sending a session SYN/ACK packet, including the transition cookie, in response to the received session SYN packet, receiving a session ACK packet, and determining whether a candidate transition cookie in the received session ACK packet comprises a time value representing a time within a predetermined time interval from the time the session ACK packet is received.
摘要翻译：提供了一种用于TCP SYN cookie验证的方法和系统。所述方法包括：通过主机服务器的TCP会话建立模块接收会话SYN分组，生成包含表示实际时间的时间值的转换cookie，响应于接收到的发送包括转换cookie的会话SYN / ACK分组会话SYN分组，接收会话ACK分组，以及确定接收到的会话ACK分组中的候选转移cookie是否包括表示从接收到会话ACK分组的时间起的预定时间间隔内的时间的时间值。

66. 发明申请

US20070180101A1 System and method for storing data-network activity information 审中-公开
标题翻译：用于存储数据网络活动信息的系统和方法
公开(公告)号：US20070180101A1
公开(公告)日：2007-08-02
申请号：US11328823
申请日：2006-01-10
申请人： Lee Chen , Rishi Sampat , John Chiong , Dennis Oshiba
发明人： Lee Chen , Rishi Sampat , John Chiong , Dennis Oshiba
IPC分类号： G06F17/00 , G06F15/173
CPC分类号： H04L67/22 , H04L63/0227
摘要： A system and method are disclosed that may include receiving a first event log for a data network user; identifying the user that is the subject of the first event log; updating a user activity record, within stored user activity records, with activity information included in the first event log, the activity information being represented in a first format in the first event log; and repeating the steps of receiving, identifying, and updating for at least one additional event log having activity information stored therein in at least one format other than the first format.
摘要翻译：公开了一种可以包括接收数据网络用户的第一事件日志的系统和方法; 识别作为第一事件日志主题的用户; 在所存储的用户活动记录中，使用包括在所述第一事件日志中的活动信息来更新用户活动记录，所述活动信息以所述第一事件日志中的第一格式表示; 并且以除了第一格式之外的至少一种格式重复对存储有活动信息的至少一个附加事件日志进行接收，识别和更新的步骤。

67. 发明授权

US07229563B2 Plasma etching of Ni-containing materials 有权
标题翻译：含镍材料的等离子体蚀刻
公开(公告)号：US07229563B2
公开(公告)日：2007-06-12
申请号：US10501987
申请日：2003-01-28
申请人： Lee Chen
发明人： Lee Chen
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32082 , H01L21/32136
摘要： An apparatus and method are described for etching Ni-containing films using gas phase plasma etching. Etching of Ti—Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX) and carbonyl etching gases. The Ti in the Ti—Ni alloy is etched via an ion-assisted reaction with HX and the Ni is etched by reacting with CO. The method is particularly well suited for anisotropic etching of Ti—Ni metal gates for CMOS applications. Etching of Ni—Fe layers is carried out by exposure to plasma comprising a carbonyl etching gas.
摘要翻译：描述了使用气相等离子体蚀刻来蚀刻含Ni膜的装置和方法。通过暴露于包含卤化氢（HX）和羰基蚀刻气体的等离子体进行Ti-Ni合金的蚀刻。通过与HX的离子辅助反应对Ti-Ni合金中的Ti进行蚀刻，并通过与CO反应蚀刻Ni，该方法特别适用于CMOS应用的Ti-Ni金属栅极的各向异性蚀刻。通过暴露于包含羰基蚀刻气体的等离子体来进行Ni-Fe层的蚀刻。

68. 发明申请

US20060065367A1 Plasma processing system for treating a substrate 有权
标题翻译：用于处理基材的等离子体处理系统
公开(公告)号：US20060065367A1
公开(公告)日：2006-03-30
申请号：US10953801
申请日：2004-09-30
申请人： Lee Chen , Hiromitsu Kambara , Caiz Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Lee Chen , Hiromitsu Kambara , Caiz Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： H01L21/306
CPC分类号： H01J37/32211 , H01J37/32082 , H01J37/32192
摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.
摘要翻译：用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理底物。衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体等离子体空间栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

69. 发明申请

US20050244843A1 Blood test prototypes and methods for the detection of circulating tumor and endothelial cells 审中-公开
标题翻译：血液检测原型和检测循环肿瘤和内皮细胞的方法
公开(公告)号：US20050244843A1
公开(公告)日：2005-11-03
申请号：US10978029
申请日：2004-10-30
申请人： Wen-Tien Chen , Lee Chen , Che Chen
发明人： Wen-Tien Chen , Lee Chen , Che Chen
IPC分类号： C12M1/34 , C12Q1/68 , G01N1/30 , G01N33/48 , G01N33/50
CPC分类号： G01N33/5091 , G01N1/30 , G01N33/574
摘要： Methods and devices for isolating and diagnosing disease with a cell adhesion matrix system, mimicking a metastatic, cardiovascular or placental environment, are disclosed. The cell adhesion matrix facilitates the enrichment of target cells such as metastatic tumor cells, fetal cells and endothelial progenitor cells from a fluid sample such as blood for diagnostic and therapeutic applications in treating patients afflicted with disease, such as cancerous, cardiovascular and fetal diseases, as well as for research applications in molecular analysis of metastatic, and cardiovascular and fetal diseases. Blood test prototypes and methods for the cell enrichment and detection of circulating tumor and endothelial cells using multiplex molecular analysis are described herein. In addition, methods and compositions for determining host immunity to tumor in subjects with risk of cancer progression and methods for isolating an enriched fraction of fetal cells from pregnant females for prenatal diagnosis are also described herein.
摘要翻译：公开了用细胞粘附基质系统分离和诊断疾病的方法和装置，模拟转移性，心血管或胎盘环境。细胞粘附基质促进靶细胞如来自流体样品例如血液的转移性肿瘤细胞，胎儿细胞和内皮祖细胞的富集，用于治疗患有疾病如癌，心血管和胎儿疾病的患者的诊断和治疗应用，以及用于转移性和心血管和胎儿疾病分子分析中的研究应用。本文描述了使用多重分子分析的血液测试原型和用于细胞富集和检测循环肿瘤和内皮细胞的方法。此外，本文还描述了用于确定具有癌症发展风险的受试者中具有肿瘤宿主免疫性的方法和组合物，以及用于从孕妇分离胎儿细胞的富集部分用于产前诊断的方法和组合物。

70. 发明申请

US20050054214A1 Method for mitigating chemical vapor deposition phosphorus doping oxide surface induced defects 审中-公开
标题翻译：减少化学气相沉积磷掺杂氧化物表面诱发缺陷的方法
公开(公告)号：US20050054214A1
公开(公告)日：2005-03-10
申请号：US10661089
申请日：2003-09-10
申请人： Lee Chen , Kuang-Chao Chen , Chin-Hsiang Lin
发明人： Lee Chen , Kuang-Chao Chen , Chin-Hsiang Lin
IPC分类号： H01L21/316 , H01L21/31
CPC分类号： H01L21/02129 , H01L21/02271 , H01L21/02362 , H01L21/31625
摘要： A method for mitigating defect formation in a phosphosilicate glass layer of a semiconductor device includes forming an oxide cap upon the phosphosilicate glass layer via a chemical vapor deposition process.
摘要翻译：减轻半导体器件的磷硅玻璃层中的缺陷形成的方法包括通过化学气相沉积工艺在磷硅玻璃层上形成氧化物盖。

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