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    • 62. 发明授权
    • Positive-working photoresist composition
    • 正光刻胶组合物
    • US06589705B1
    • 2003-07-08
    • US09698190
    • 2000-10-30
    • Kenichiro SatoKazuyoshi MizutaniShoichiro Yasunami
    • Kenichiro SatoKazuyoshi MizutaniShoichiro Yasunami
    • G03C172
    • G03F7/0758G03F7/0045G03F7/0048
    • A positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B′) an onium salt compound which generates an acid when irradiated with active ray or radiation and (C) at least one of fluorine-based and/or silicon-based surface active agent and nonionic surface active agent or a positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B) a compound which generates an acid when irradiated with active ray or radiation, and (D) a mixed solvent containing at least one propylene glycol monoalkyl ether carboxylate and at least one of solvents selected from the group consisting of propylene glycol monoalkyl ether, alkyl lactate and alkoxyalkyl propionate and solvents selected from the group consisting of &ggr;-butyrolactone, ethylene carbonate and propylene carbonate.
    • 正性光致抗蚀剂组合物包含(A)包含特定重复结构单元的树脂,当被酸作用时树脂在碱性显影剂中的溶解度增加,(B')当照射时产生酸的鎓盐化合物 活性射线或辐射,和(C)氟基和/或硅基表面活性剂和非离子表面活性剂或正性光致抗蚀剂组合物中的至少一种包含(A)包含特定重复结构单元的树脂,该树脂 (B)当用活性射线或辐射照射时产生酸的化合物,和(D)含有至少一种丙二醇单烷基醚羧酸酯的混合溶剂,和 选自丙二醇单烷基醚,乳酸烷基酯和丙酸烷氧基烷基酯中的至少一种溶剂和选自以下的溶剂: 的γ-丁内酯,碳酸亚乙酯和碳酸亚丙酯。
    • 63. 发明授权
    • Positive photoresist composition for exposure to far ultraviolet light
    • 用于暴露于远紫外光的正性光致抗蚀剂组合物
    • US06303265B1
    • 2001-10-16
    • US09345159
    • 1999-06-30
    • Kenichiro Sato
    • Kenichiro Sato
    • G03C173
    • G03F7/0397G03F7/0395Y10S430/107
    • A positive photoresist composition for exposure to far ultraviolet light which comprises (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B) a resin which is decomposed by the action of an acid to increase its solubility in an alkaline developing solution and has a group represented by the following formula (1) connected to at least one terminal of the molecular chain thereof: —X—R  (1) wherein X represents —R1—, —S—R1—, —O—R1—, —NH—R1— or —NR2—R1—; R represents an alkoxy group, a hydroxy group, —COO—R2, —CONH—R2, —CONHSO2—R2 or —CONH2; R1 represents a divalent hydrocarbon group having from 1 to 20 carbon atoms; and R2 represents an alkyl group. The positive photoresist composition provides good sensitivity, resolution and resist pattern when used with a light source having a wavelength of 250 nm or less, particularly 220 nm or less and which forms a solution having excellent storage stability when dissolved in an organic solvent.
    • 用于暴露于远紫外光的正性光致抗蚀剂组合物,其包含(A)在用光化射线或辐射照射时产生酸的化合物,和(B)通过酸的作用分解以提高其在 碱性显影液,并具有与下述分子链的至少一个末端相连的下式(1)表示的基团:其中,X表示-R 1,-S-R 1,-O-R 1,-NH- R1-或-NR2-R1-; R代表烷氧基,羟基,-COO-R2,-CONH-R2,-CONHSO2-R2或-CONH2; R1表示碳原子数为1〜20的二价烃基; 并且R 2表示烷基。当与具有250nm或更小,特别是220nm或更小的波长的光源一起使用时,正性光致抗蚀剂组合物提供良好的灵敏度,分辨率和抗蚀剂图案,并且当溶解时形成具有优异的储存稳定性的溶液 在有机溶剂中。