专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US09716153B2 Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region 有权
公开(公告)号：US09716153B2
公开(公告)日：2017-07-25
申请号：US13539459
申请日：2012-07-01
申请人： Sagy Levy , Fredrick Jenne , Krishnaswamy Ramkumar
发明人： Sagy Levy , Fredrick Jenne , Krishnaswamy Ramkumar
IPC分类号： H01L29/792 , H01L29/40 , H01L21/28 , H01L29/51 , H01L29/66 , H01L29/78 , H01L29/786 , H01L29/04 , H01L29/06 , H01L29/16
CPC分类号： H01L29/408 , H01L21/28282 , H01L29/04 , H01L29/0676 , H01L29/16 , H01L29/513 , H01L29/518 , H01L29/66833 , H01L29/785 , H01L29/78696 , H01L29/792 , H01L29/7926
摘要： Scaling a charge trap memory device and the article made thereby. In one embodiment, the charge trap memory device includes a substrate having a source region, a drain region, and a channel region electrically connecting the source and drain. A tunnel dielectric layer is disposed above the substrate over the channel region, and a multi-layer charge-trapping region disposed on the tunnel dielectric layer. The multi-layer charge-trapping region includes a first deuterated layer disposed on the tunnel dielectric layer, a first nitride layer disposed on the first deuterated layer and a second nitride layer.

62. 发明授权

US09431549B2 Nonvolatile charge trap memory device having a high dielectric constant blocking region 有权
标题翻译：具有高介电常数阻挡区域的非易失性电荷陷阱存储器件
公开(公告)号：US09431549B2
公开(公告)日：2016-08-30
申请号：US13436875
申请日：2012-03-31
申请人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar
发明人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar
IPC分类号： H01L29/792 , B82Y10/00 , H01L21/28 , H01L29/51 , H01L29/66 , H01L27/115
CPC分类号： H01L29/7923 , B82Y10/00 , H01L21/28282 , H01L27/11578 , H01L29/0676 , H01L29/42392 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66666 , H01L29/66742 , H01L29/66833 , H01L29/78642 , H01L29/78696 , H01L29/792 , H01L29/7926
摘要： An embodiment of a nonvolatile charge trap memory device is described. In one embodiment, the device comprises a channel comprising silicon overlying a surface on a substrate electrically connecting a first diffusion region and a second diffusion region of the memory device, and a gate stack intersecting and overlying at least a portion of the channel, the gate stack comprising a tunnel oxide abutting the channel, a split charge-trapping region abutting the tunnel oxide, and a multi-layer blocking dielectric abutting the split charge-trapping region. The split charge-trapping region includes a first charge-trapping layer comprising a nitride closer to the tunnel oxide, and a second charge-trapping layer comprising a nitride overlying the first charge-trapping layer. The multi-layer blocking dielectric comprises at least a high-K dielectric layer.
摘要翻译：描述了非易失性电荷陷阱存储器件的实施例。在一个实施例中，该装置包括一个通道，该沟道包括覆盖在电连接存储器件的第一扩散区和第二扩散区的衬底上的表面的硅以及与沟道的至少一部分相交并且覆盖的栅极堆，栅极包括邻接通道的隧道氧化物的堆叠，邻接隧道氧化物的分裂电荷捕获区域和与分离的电荷捕获区域邻接的多层阻挡电介质。分离电荷捕获区域包括第一电荷捕获层，其包含更接近隧道氧化物的氮化物，以及包含覆盖在第一电荷俘获层上的氮化物的第二电荷俘获层。多层阻挡电介质至少包括高K电介质层。

63. 发明授权

US08940645B2 Radical oxidation process for fabricating a nonvolatile charge trap memory device 有权
标题翻译：用于制造非易失性电荷陷阱存储器件的自由基氧化工艺
公开(公告)号：US08940645B2
公开(公告)日：2015-01-27
申请号：US13539458
申请日：2012-07-01
申请人： Krishnaswamy Ramkumar , Sagy Levy , Jeong Byun
发明人： Krishnaswamy Ramkumar , Sagy Levy , Jeong Byun
IPC分类号： H01L21/31
CPC分类号： H01L29/7926 , B82Y10/00 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02238 , H01L21/02252 , H01L21/02271 , H01L21/02326 , H01L21/02332 , H01L21/0234 , H01L21/28282 , H01L29/0669 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/4234 , H01L29/66833 , H01L29/775
摘要： A method for fabricating a nonvolatile charge trap memory device is described. The method includes subjecting a substrate to a first oxidation process to form a tunnel oxide layer overlying a polysilicon channel, and forming over the tunnel oxide layer a multi-layer charge storing layer comprising an oxygen-rich, first layer comprising a nitride, and an oxygen-lean, second layer comprising a nitride on the first layer. The substrate is then subjected to a second oxidation process to consume a portion of the second layer and form a high-temperature-oxide (HTO) layer overlying the multi-layer charge storing layer. The stoichiometric composition of the first layer results in it being substantially trap free, and the stoichiometric composition of the second layer results in it being trap dense. The second oxidation process can comprise a plasma oxidation process or a radical oxidation process using In-Situ Steam Generation.
摘要翻译：描述了制造非易失性电荷陷阱存储器件的方法。所述方法包括使衬底经受第一氧化工艺以形成覆盖多晶硅沟道的隧道氧化物层，以及在所述隧道氧化物层上形成多层电荷存储层，所述多层电荷存储层包含富氧的第一层，所述第一层包含氮化物，以及在第一层上包含氮化物的贫氧第二层。然后对衬底进行第二氧化处理以消耗第二层的一部分并形成覆盖多层电荷存储层的高温氧化物（HTO）层。第一层的化学计量组成导致其基本上无陷阱，并且第二层的化学计量组成使其陷入致密。第二氧化过程可以包括使用原位蒸汽发生的等离子体氧化过程或自由基氧化过程。

64. 发明授权

US08859374B1 Memory transistor with multiple charge storing layers and a high work function gate electrode 有权
标题翻译：具有多个电荷存储层和高功函数栅电极的存储晶体管
公开(公告)号：US08859374B1
公开(公告)日：2014-10-14
申请号：US13288919
申请日：2011-11-03
申请人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar
发明人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , G11C16/0466 , G11C16/349 , H01L21/0214 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/28035 , H01L21/28282 , H01L27/11573 , H01L29/4234 , H01L29/4916 , H01L29/518 , H01L29/66833 , H01L29/792
摘要： Semiconductor devices including non-volatile memory transistors and methods of fabricating the same to improve performance thereof are provided. In one embodiment, the method comprises: (i) forming an oxide-nitride-oxide (ONO) dielectric stack on a surface of a semiconductor substrate in at least a first region in which a non-volatile memory transistor is to be formed, the ONO dielectric stack including a multi-layer charge storage layer; (ii) forming an oxide layer on the surface of the substrate in a second region in which a metal oxide semiconductor (MOS) logic transistor is to be formed; and (iii) forming a high work function gate electrode on a surface of the ONO dielectric stack. Other embodiments are also disclosed.
摘要翻译：提供包括非易失性存储晶体管的半导体器件及其制造方法以改善其性能。在一个实施例中，该方法包括：（i）在其中将形成非易失性存储晶体管的至少第一区域中，在半导体衬底的表面上形成氧化物 - 氧化物 - 氧化物（ONO）电介质叠层， ONO电介质堆叠包括多层电荷存储层; （ii）在要形成金属氧化物半导体（MOS）逻辑晶体管的第二区域中在所述衬底的表面上形成氧化物层; 和（iii）在ONO电介质叠层的表面上形成高功函数栅电极。还公开了其他实施例。

65. 发明授权

US08772059B2 Inline method to monitor ONO stack quality 有权
标题翻译：监控ONO堆栈质量的内联方法
公开(公告)号：US08772059B2
公开(公告)日：2014-07-08
申请号：US13430631
申请日：2012-03-26
申请人： Yu Yang , Krishnaswamy Ramkumar
发明人： Yu Yang , Krishnaswamy Ramkumar
IPC分类号： H01L21/66
CPC分类号： H01L29/792 , H01L22/14 , H01L29/66833
摘要： Embodiments of structures and methods for determining operating characteristics of a non-volatile memory transistor comprising a charge-storage-layer and a tunneling-layer are described. In one embodiment, the method comprises: forming on a substrate a structure including a nitrided tunneling-layer and a charge-storage-layer overlying the tunneling-layer comprising a first charge-storage layer adjacent to the tunneling-layer, and a second charge-storage layer overlying the first charge-storage layer, wherein the first charge-storage layer is separated from the second charge-storage layer by a anti-tunneling layer comprising an oxide; depositing a positive charge on the charge-storage-layer and determining a first voltage to establish a first leakage current through the charge-storage-layer and the tunneling-layer; depositing a negative charge on the charge-storage-layer and determining a second voltage to establish a second leakage current through the charge-storage-layer and the tunneling-layer; and determining a differential voltage by calculating a difference between the first and second voltages.
摘要翻译：描述了用于确定包括电荷存储层和隧穿层的非易失性存储晶体管的操作特性的结构和方法的实施例。在一个实施例中，该方法包括：在衬底上形成包括氮化隧道层和覆盖隧道层的电荷存储层的结构，该隧穿层包括与隧道层相邻的第一电荷存储层和第二电荷覆盖在第一电荷存储层上的第一电荷存储层，其中第一电荷存储层通过包含氧化物的反隧道层与第二电荷存储层分离; 在电荷存储层上沉积正电荷并确定第一电压以建立通过电荷存储层和隧道层的第一泄漏电流; 在电荷存储层上沉积负电荷并确定第二电压以建立通过电荷存储层和隧穿层的第二泄漏电流; 以及通过计算所述第一和第二电压之间的差来确定差分电压。

66. 发明授权

US08710579B1 SONOS stack with split nitride memory layer 有权
标题翻译： SONOS堆叠带有划痕的氮化物存储层
公开(公告)号：US08710579B1
公开(公告)日：2014-04-29
申请号：US13551237
申请日：2012-07-17
申请人： Fredrick Jenne , Krishnaswamy Ramkumar
发明人： Fredrick Jenne , Krishnaswamy Ramkumar
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , G11C16/04 , H01L21/022 , H01L21/02323 , H01L27/11563 , H01L29/4234 , H01L29/513 , H01L29/792
摘要： A semiconductor device and method of manufacturing the same are provided. In one embodiment, semiconductor device comprises a split charge-trapping region comprising two nitride layers with charge traps distributed therein, the two nitride layers separated by one or more oxide layers. The two nitride layers include a first nitride layer closer to a substrate over which the split charge-trapping region is formed, and a second nitride layer on the other side of the one or more oxide layers. The second nitride layer comprises a majority of the charge traps. Other embodiments are also described.
摘要翻译：提供半导体器件及其制造方法。在一个实施例中，半导体器件包括分离的电荷捕获区域，其包括分布有电荷陷阱的两个氮化物层，两个氮化物层由一个或多个氧化物层分隔开。两个氮化物层包括更靠近其上形成有分离电荷捕获区的衬底的第一氮化物层和在一个或多个氧化物层的另一侧上的第二氮化物层。第二氮化物层包括大部分电荷阱。还描述了其它实施例。

67. 发明授权

US08679927B2 Integration of non-volatile charge trap memory devices and logic CMOS devices 有权
标题翻译：集成非易失性电荷陷阱存储器件和逻辑CMOS器件
公开(公告)号：US08679927B2
公开(公告)日：2014-03-25
申请号：US12185751
申请日：2008-08-04
申请人： Krishnaswamy Ramkumar , Fredrick B. Jenne , Sagy Levy
发明人： Krishnaswamy Ramkumar , Fredrick B. Jenne , Sagy Levy
IPC分类号： H01L29/792
CPC分类号： H01L29/7833 , H01L21/823412 , H01L21/823425 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11568 , H01L27/11573 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7836 , H01L29/7843
摘要： A semiconductor structure and method to form the same. The semiconductor structure includes a substrate having a non-volatile charge trap memory device disposed on a first region and a logic device disposed on a second region. A charge trap dielectric stack may be formed subsequent to forming wells and channels of the logic device. HF pre-cleans and SC1 cleans may be avoided to improve the quality of a blocking layer of the non-volatile charge trap memory device. The blocking layer may be thermally reoxidized or nitridized during a thermal oxidation or nitridation of a logic MOS gate insulator layer to densify the blocking layer. A multi-layered liner may be utilized to first offset a source and drain implant in a high voltage logic device and also block silicidation of the nonvolatile charge trap memory device.
摘要翻译：一种半导体结构及其形成方法。半导体结构包括具有设置在第一区域上的非易失性电荷陷阱存储器件和设置在第二区域上的逻辑器件的衬底。可以在形成逻辑器件的阱和通道之后形成电荷陷阱电介质叠层。可以避免HF预清洗和SC1清洁，以提高非挥发性电荷陷阱存储器件的阻挡层的质量。在逻辑MOS栅极绝缘体层的热氧化或氮化期间，阻挡层可以被热再氧化或氮化，以致密封阻挡层。可以使用多层衬垫来首先在高压逻辑器件中偏置源极和漏极注入，并且还阻挡非易失性电荷陷阱存储器件的硅化。

68. 发明授权

US08536640B2 Deuterated film encapsulation of nonvolatile charge trap memory device 有权
公开(公告)号：US08536640B2
公开(公告)日：2013-09-17
申请号：US11904474
申请日：2007-09-26
申请人： Krishnaswamy Ramkumar , Fredrick B. Jenne , William W. Koutny
发明人： Krishnaswamy Ramkumar , Fredrick B. Jenne , William W. Koutny
IPC分类号： H01L29/792
CPC分类号： H01L29/66833 , H01L21/28282 , H01L29/4234 , H01L29/511 , H01L29/792
摘要： A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.

69. 发明申请

US20130175600A1 SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER 有权
标题翻译： SONOS堆叠分离硝酸盐存储层
公开(公告)号：US20130175600A1
公开(公告)日：2013-07-11
申请号：US13431069
申请日：2012-03-27
申请人： Fredrick Jenne , Krishnaswamy Ramkumar
发明人： Fredrick Jenne , Krishnaswamy Ramkumar
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/792 , B82Y10/00 , H01L21/28282 , H01L29/513 , H01L29/785 , H01L29/7926
摘要： Embodiments of a non-planar memory device including a split charge-trapping region and methods of forming the same are described. Generally, the device comprises: a channel formed from a thin film of semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide overlying the channel; a split charge-trapping region overlying the tunnel oxide, the split charge-trapping region including a bottom charge-trapping layer comprising a nitride closer to the tunnel oxide, and a top charge-trapping layer, wherein the bottom charge-trapping layer is separated from the top charge-trapping layer by a thin anti-tunneling layer comprising an oxide. Other embodiments are also disclosed.
摘要翻译：描述了包括分离电荷捕获区域的非平面存储器件及其形成方法的实施例。通常，该器件包括：由覆盖存储器件的源极和漏极的衬底上的表面的半导体材料薄膜形成的沟道; 覆盖通道的隧道氧化物; 分离电荷捕获区域，覆盖隧道氧化物，分离电荷捕获区域包括底部电荷捕获层，其包含更接近隧道氧化物的氮化物，以及顶部电荷捕获层，其中底部电荷捕获层被分离从顶部的电荷捕获层通过包含氧化物的薄的抗隧道层。还公开了其他实施例。

70. 发明申请

US20130175599A1 INLINE METHOD TO MONITOR ONO STACK QUALITY 有权
标题翻译：用于监控堆栈质量的在线方法
公开(公告)号：US20130175599A1
公开(公告)日：2013-07-11
申请号：US13430631
申请日：2012-03-26
申请人： Yu Yang , Krishnaswamy Ramkumar
发明人： Yu Yang , Krishnaswamy Ramkumar
IPC分类号： H01L29/792 , H01L21/66
CPC分类号： H01L29/792 , H01L22/14 , H01L29/66833
摘要： Embodiments of structures and methods for determining operating characteristics of a non-volatile memory transistor comprising a charge-storage-layer and a tunneling-layer are described. In one embodiment, the method comprises: forming on a substrate a structure including a nitrided tunneling-layer and a charge-storage-layer overlying the tunneling-layer comprising a first charge-storage layer adjacent to the tunneling-layer, and a second charge-storage layer overlying the first charge-storage layer, wherein the first charge-storage layer is separated from the second charge-storage layer by a anti-tunneling layer comprising an oxide; depositing a positive charge on the charge-storage-layer and determining a first voltage to establish a first leakage current through the charge-storage-layer and the tunneling-layer; depositing a negative charge on the charge-storage-layer and determining a second voltage to establish a second leakage current through the charge-storage-layer and the tunneling-layer; and determining a differential voltage by calculating a difference between the first and second voltages.
摘要翻译：描述了用于确定包括电荷存储层和隧穿层的非易失性存储晶体管的操作特性的结构和方法的实施例。在一个实施例中，该方法包括：在衬底上形成包括氮化隧道层和覆盖隧道层的电荷存储层的结构，该隧穿层包括与隧道层相邻的第一电荷存储层和第二电荷覆盖在第一电荷存储层上的第一电荷存储层，其中第一电荷存储层通过包含氧化物的反隧道层与第二电荷存储层分离; 在电荷存储层上沉积正电荷并确定第一电压以建立通过电荷存储层和隧道层的第一泄漏电流; 在电荷存储层上沉积负电荷并确定第二电压以建立通过电荷存储层和隧穿层的第二泄漏电流; 以及通过计算所述第一和第二电压之间的差来确定差分电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式