会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 63. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20070057280A1
    • 2007-03-15
    • US11519169
    • 2006-09-11
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • H01L29/74
    • H01L29/7834H01L23/5225H01L23/585H01L29/0638H01L29/0653H01L29/0692H01L29/1083H01L29/402H01L29/7833H01L2924/0002H01L2924/00
    • A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
    • 一种半导体器件,包括:半导体层; 栅极绝缘层; 栅电极; 一个通道区; 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层,其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层,其中当从所述顶侧观察时,所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中,所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域 所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上,所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域 在从顶侧观察的通道宽度方向上。
    • 64. 发明授权
    • Method for manufacturing semiconductor devices
    • 制造半导体器件的方法
    • US07163855B2
    • 2007-01-16
    • US10902699
    • 2004-07-29
    • Takafumi NodaMasahiro HayashiAkihiko EbinaMasahiko Tsuyuki
    • Takafumi NodaMasahiro HayashiAkihiko EbinaMasahiko Tsuyuki
    • H01L21/336H01L21/8238H01L21/8234
    • H01L21/823892H01L21/823814H01L21/823857H01L27/0922H01L27/0928
    • A semiconductor device manufacturing method is provided including: forming a first impurity layer that becomes first wells in a high breakdown voltage transistor forming region in a semiconductor layer; forming a second impurity layer that becomes offset regions in the high breakdown voltage transistor forming region; forming the first wells and the offset regions by diffusing impurities of the first and second impurity layers by heat treating the semiconductor layer; forming element isolation regions by a trench element isolation method in the semiconductor layer, after forming the first wells and the offset regions; forming first gate dielectric layers in the high breakdown voltage transistor forming region; forming second wells in a low voltage driving transistor forming region in the semiconductor layer; forming second gate dielectric layers in the low voltage driving transistor forming region; and forming gate electrodes in the high breakdown voltage transistor forming region and the low voltage driving transistor forming region.
    • 提供一种半导体器件制造方法,包括:在半导体层中形成在高击穿电压晶体管形成区域中成为第一阱的第一杂质层; 形成成为所述高击穿电压晶体管形成区域的偏移区域的第二杂质层; 通过热处理所述半导体层来扩散所述第一和第二杂质层的杂质来形成所述第一阱和所述偏移区域; 在形成第一阱和偏移区之后,通过沟槽元件隔离方法在半导体层中形成元件隔离区; 在高击穿电压晶体管形成区域中形成第一栅极电介质层; 在半导体层中的低电压驱动晶体管形成区域中形成第二阱; 在所述低电压驱动晶体管形成区域中形成第二栅极电介质层; 以及在高击穿电压晶体管形成区域和低电压驱动晶体管形成区域中形成栅电极。
    • 65. 发明申请
    • Wiring substrate and radiation detector using the same
    • 接线基板和辐射探测器使用它
    • US20060244153A1
    • 2006-11-02
    • US10541618
    • 2004-01-08
    • Katsumi ShibayamaYutaka KusuyamaMasahiro Hayashi
    • Katsumi ShibayamaYutaka KusuyamaMasahiro Hayashi
    • H01L23/52H01L39/22H01L33/00H01L23/48H01L29/40
    • H01L31/02322H01L27/14618H01L2224/16225H05K1/02H05K1/115H05K1/144
    • Between a radiation detecting section 1, arranged by a scintillator 10 and a PD array 15, and a signal processing element 30, processing detected signals output from PD array 15, is disposed a wiring substrate section 2, provided with conduction paths that guide the detected signals between PD array 15 and signal processing element 30. Wiring substrate section 2 has a first wiring substrate 20, having conductive members 21, which are to serve as the conduction paths at the PD array 15 side, provided in through holes 20c, and a second wiring substrate 25, having conductive members 26, which are to serve as the conduction paths at the signal processing element 30 side, provided in through holes 25c, and is arranged so that the positions of through holes 20c in wiring substrate 20 differ from the positions of through holes 25c in wiring substrate 25 as viewed in the alignment direction. A wiring substrate, with which the transmission of radiation is restrained, and a radiation detector, using this wiring substrate, are thus provided.
    • 在由闪烁体10和PD阵列15布置的放射线检测部分1和信号处理元件30之间,处理从PD阵列15输出的检测信号,布置在布线基板部分2上,布线基板部分2设置有引导检测到的传导路径 PD阵列15与信号处理元件30之间的信号。 布线基板部分2具有第一布线基板20,其具有导电构件21,其用作在PD阵列15侧的导通路径,设置在通孔20c中,第二布线基板25具有导电构件26, 其用作在通孔25c中设置在信号处理元件30侧的传导路径,并且布置成使得布线基板20中的通孔20c的位置与布线中的通孔25c的位置不同 基板25。 因此,提供了利用该布线基板来抑制辐射传播的布线基板和放射线检测器。
    • 67. 发明授权
    • Data transfer method including recognizing identical messages and communication apparatus using the method
    • 数据传输方法包括使用该方法识别相同消息和通信装置
    • US06865182B2
    • 2005-03-08
    • US09817325
    • 2001-03-26
    • Hironori OchiaiYuji ItoAkinori KubotaYasuhide TsuruMasahiro HayashiTakao Shikama
    • Hironori OchiaiYuji ItoAkinori KubotaYasuhide TsuruMasahiro HayashiTakao Shikama
    • H04L12/761H04L12/28
    • H04L47/10H04L47/36H04L2212/00
    • In a data transfer method and apparatus of the present invention, multiple data frames are received from a preceding node of a network of communication units, and the received data frames are routed to a next node of the network. It is detected whether each of the multiple data frames is addressed to another communication unit. It is detected whether the data frames that are detected as being addressed to another communication unit contain identical messages. The data frames that are detected as containing different destinations and identical messages are assembled into an integrated data frame, so that the integrated data frame is transmitted to the next node. A selected next-node equipment identifier is supplied, which indicates a selected next-node communication unit of the network that receives the integrated data frame. When the selected next-node equipment identifier and the integrated data frame are received, the integrated data frame is transmitted to the selected next-node communication unit via the network.
    • 在本发明的数据传送方法和装置中,从通信单元的网络的前一节点接收多个数据帧,并将接收到的数据帧路由到网络的下一个节点。 检测多个数据帧中的每一个是否寻址到另一个通信单元。 检测到被检测为寻址到另一个通信单元的数据帧是否包含相同的消息。 被检测为包含不同目的地和相同消息的数据帧被组合成一个集成数据帧,使得集成数据帧被传送到下一个节点。 提供选择的下一节点设备标识符,其指示接收集成数据帧的网络的选定的下一节点通信单元。 当接收到所选择的下一节点设备标识符和集成数据帧时,经由网络将集成数据帧发送到所选择的下一节点通信单元。