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61. 发明申请

US20080099681A1 Infrared Detector and Process for Fabricating the Same 审中-公开
标题翻译：红外探测器及其制造方法
公开(公告)号：US20080099681A1
公开(公告)日：2008-05-01
申请号：US10589724
申请日：2004-02-17
申请人： Yasuhiro Shimada , Daisuke Ueda
发明人： Yasuhiro Shimada , Daisuke Ueda
IPC分类号： G01J5/00 , H01L21/00
CPC分类号： G01J5/20 , H01C7/045 , H01C17/08 , H01L27/14669 , H01L27/14683 , H01L31/09 , H01L31/109
摘要： First, an electrode is formed on an insulation layer that has been formed on a silicon substrate, when manufacturing an infrared detection device. The electrode has a shape matching that of a thermal resistance element constituting the infrared detection device. A semiconductor substrate is placed in a reaction chamber, given a predetermined potential, and heated. Next, a material of a thermal resistor substance constituting the thermal resistance element is vaporized into a gaseous material, and the gaseous material is ion-clusterized and supplied into the reaction chamber. The gaseous material collects toward the electrode as a result of an action of an electric field generated by giving the electrode the predetermined potential. The gaseous material that came into contact with the electrode is stabilized by receiving electrons, and thermally decomposes, thus growing a thermal resistor substance on the electrode.
摘要翻译：首先，在制造红外线检测装置时，在形成于硅基板上的绝缘层上形成电极。电极的形状与构成红外线检测装置的热电阻元件的形状一致。将半导体衬底放置在反应室中，给定预定电位并加热。接下来，构成热电阻元件的热电阻体的材料蒸发成气态物质，气态物质离子聚集并供给反应室。由于通过给予电极预定电位而产生的电场的作用，气态材料朝向电极聚集。与电极接触的气体材料通过接收电子而被稳定，并且热分解，从而在电极上生长热电阻物质。

62. 发明申请

US20060226415A1 Semiconductor integrated circuit device and vehicle-mounted radar system using the same 有权
公开(公告)号：US20060226415A1
公开(公告)日：2006-10-12
申请号：US11284049
申请日：2005-11-22
申请人： Masaaki Nishijima , Daisuke Ueda
发明人： Masaaki Nishijima , Daisuke Ueda
IPC分类号： H01L29/06
CPC分类号： H01L29/7787 , G01S7/032 , H01L23/481 , H01L23/66 , H01L24/24 , H01L24/82 , H01L29/2003 , H01L2223/6627 , H01L2224/24011 , H01L2224/24051 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12032 , H01L2924/14 , H01L2924/1423 , H01L2924/1903 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor integrated circuit device includes a HFET formed on part of a substrate made of sapphire and including a Group III-V nitride semiconductor layer, a dielectric film formed on the substrate to cover the top and side surfaces and upper corners of the Group III-V nitride semiconductor layer, a microstrip line formed with the dielectric film interposed between the substrate and the microstrip line, and a drain lead which is formed on part of the dielectric film and through which the HFET is electrically connected to the microstrip line.

63. 外观设计

USD529077S1 Front panel portion of a paper feed cassette 有权
标题翻译：供纸盒的前面板部分
公开(公告)号：USD529077S1
公开(公告)日：2006-09-26
申请号：US29224746
申请日：2005-03-08
申请人： Noriaki Takahashi , Takanori Kanda , Daisuke Ueda , Takanobu Ohba
设计人： Noriaki Takahashi , Takanori Kanda , Daisuke Ueda , Takanobu Ohba

64. 发明申请

US20060108605A1 Schottky barrier diode and integrated circuit using the same 有权
标题翻译：肖特基势垒二极管和集成电路使用相同
公开(公告)号：US20060108605A1
公开(公告)日：2006-05-25
申请号：US11271833
申请日：2005-11-14
申请人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/739
CPC分类号： H01L29/66143 , H01L29/872
摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.
摘要翻译：肖特基势垒二极管包括依次形成在衬底上的第一半导体层和第二半导体层; 以及形成在第一半导体层和第二半导体层中并且具有比第一半导体层和第二半导体层更高的电阻的高电阻区域。彼此间隔开的肖特基电极和欧姆电极在被高电阻区域包围的部分中形成在第二半导体层上。

65. 发明授权

US06999396B2 Initialization method of optical recording medium 失效
标题翻译：光记录介质的初始化方法
公开(公告)号：US06999396B2
公开(公告)日：2006-02-14
申请号：US10474085
申请日：2003-02-07
申请人： Kotaro Kurokawa , Takeshi Yamasaki , Daisuke Ueda , Shigeki Takagawa , Masanobu Yamamoto
发明人： Kotaro Kurokawa , Takeshi Yamasaki , Daisuke Ueda , Shigeki Takagawa , Masanobu Yamamoto
IPC分类号： G11B7/00
CPC分类号： G11B7/268 , G11B7/24038 , G11B7/252 , G11B2007/0013
摘要： An initialization method of an optical recording medium having a plurality of optical recording layers capable of reducing initialization unevenness due to light interference caused at the time of initialization without deteriorating information recording/reproducing signal characteristics of the optical recording layers is provided. An initialization method of an optical recording medium, wherein a second optical recording layer and a first optical recording layer are stacked via an interlayer on a substrate in an order, a protective layer is formed further on the first optical recording layer, a recording film in the first optical recording layer comprises a phase change type recording material, and a recording/reproducing light is irradiated from the protective film side at the time of recording/reproducing, and in a step of initializing by irradiating an initializing light on the first optical recording layer from the protective film side, the first optical recording layer is initialized so that an energy density ID1 per unit area of an incident light of the initializing light at respective points in a light convergence region converged on the first optical recording layer and an energy density ID2 per unit area at the respective points of the light convergence region of a return light, which is the initializing light transmitted through the first optical recording layer to reach the second optical recording layer, reflected on the second optical recording layer and again returned to the first optical recording layer, satisfy ID2/ID1≦0.002.
摘要翻译：提供了具有多个光记录层的光记录介质的初始化方法，其能够在初始化时引起由于光干扰引起的初始化不均匀性，而不会使信息记录/再现信号特性的光记录层恶化。一种光记录介质的初始化方法，其中第二光记录层和第一光记录层经由基板上的中间层依次层叠，在第一光记录层上进一步形成保护层，记录膜第一光记录层包括相变型记录材料，并且在记录/再现时从保护膜侧照射记录/再现光，并且在通过在第一光学记录上照射初始化光来进行初始化的步骤从保护膜侧开始，第一光记录层被初始化，使得会聚在第一光记录层上的光会聚区域各点处的初始化光的入射光的每单位面积的能量密度ID 1和能量在作为初始化的返回光的光会聚区域的各个点处的单位面积的密度ID 2 透射通过第一光学记录层的光到达第二光学记录层，在第二光学记录层上反射并再次返回到第一光学记录层，满足ID 2 / ID 1 <= 0.002。

66. 发明申请

US20050082568A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050082568A1
公开(公告)日：2005-04-21
申请号：US10862452
申请日：2004-06-08
申请人： Yutaka Hirose , Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tomohiro Murata
发明人： Yutaka Hirose , Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tomohiro Murata
IPC分类号： H01L21/28 , H01L21/338 , H01L29/20 , H01L29/417 , H01L29/778 , H01L29/812 , H01L31/0328
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.
摘要翻译：半导体器件具有蓝宝石衬底，设置在蓝宝石衬底上的由GaN制成的半导体层，设置在半导体层上的多层膜和与该多层膜欧姆接触的电极。已经通过交替地堆叠具有不同量的极化或不同量的自发极化的两种类型的半导体层，并且每个含有n型杂质，以便在两种类型的半导体层之间的界面处诱导电子而形成多层膜。这允许电极和多层膜之间的接触电阻和电流传输路径中的寄生电阻降低到比常规半导体器件中的值更低的值。

67. 发明申请

US20050001235A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050001235A1
公开(公告)日：2005-01-06
申请号：US10834362
申请日：2004-04-29
申请人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
IPC分类号： H01L21/20 , H01L21/28 , H01L21/338 , H01L29/20 , H01L29/417 , H01L29/778 , H01L29/812 , H01L31/0328 , H01S5/30
CPC分类号： H01L29/7787 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/4175 , H01L29/41766
摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译：半导体器件具有：形成在导电基板上并由高电阻的Al x Ga 1-x N构成的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，由未掺杂的GaN和N型Al y Ga 1-y N制成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。

68. 发明授权

US06729614B2 Sheet feeding apparatus 失效
标题翻译：送纸装置
公开(公告)号：US06729614B2
公开(公告)日：2004-05-04
申请号：US10225380
申请日：2002-08-21
申请人： Shigeru Okazaki , Daisuke Ueda , Kenji Kato
发明人： Shigeru Okazaki , Daisuke Ueda , Kenji Kato
IPC分类号： B65H314
CPC分类号： B65H3/48 , B65H1/18 , B65H3/06 , B65H3/54
摘要： A sheet feeding apparatus includes a sheet feeding roller that comes in contact with stacked sheets and feeds sheets one by one from the top, wherein an air outlet is provided so that air can be blown onto the upper part of the stacked sheets from the lateral side in the sheet feeding direction, and a floatation suppression member for suppressing floatation of the sheets is provided between the air outlet and the sheet feeding roller and spaced apart from the uppermost surface of the stacked sheets.
摘要翻译：片材进给装置包括与堆叠的片材接触并从顶部一个接一张地供给片材的片材进给辊，其中设置空气出口，使得空气可以从侧面吹送到堆叠片材的上部在片材供给方向上设置有用于抑制片材漂浮的浮起抑制部件，该排出抑制部件设置在排出口与供纸辊之间，并且与堆叠片材的最上表面间隔开。

69. 发明授权

US06376898B1 Bipolar transistor layout with minimized area and improved heat dissipation 有权
标题翻译：双极晶体管布局，最小面积和更好的散热
公开(公告)号：US06376898B1
公开(公告)日：2002-04-23
申请号：US09631104
申请日：2000-08-01
申请人： Tomoya Uda , Daisuke Ueda , Tsuyoshi Tanaka , Manabu Yanagihara
发明人： Tomoya Uda , Daisuke Ueda , Tsuyoshi Tanaka , Manabu Yanagihara
IPC分类号： H01L2973
CPC分类号： H01L29/0692 , H01L27/0207 , H01L27/082 , H01L29/737
摘要： An inventive semiconductor integrated circuit device includes multiple transistor banks over a substrate. The banks are arranged to be substantially parallel to each other in a planar layout of the device. Each said bank includes a plurality of unit transistors, each including a base, an emitter and a collector. In the planar layout of the device, a position of a first one of the transistors is shifted from a position of a second one of the transistors in a direction in which the banks extend. The first and second transistors belong to first and second ones of the banks, respectively, which are adjacent to each other. The second transistor is closer to the first transistor than any other transistor in the second bank.
摘要翻译：本发明的半导体集成电路器件包括在衬底上的多个晶体管组。这些堤被布置成在设备的平面布局中彼此基本平行。每个所述存储体包括多个单元晶体管，每个单元晶体管包括基极，发射极和集电极。在器件的平面布局中，晶体管中的第一个晶体管的位置沿着两个晶体管延伸的方向从第二晶体管的位置移位。第一和第二晶体管分别属于彼此相邻的第一和第二晶体管。第二晶体管比第二组中的任何其它晶体管更靠近第一晶体管。

70. 发明授权

US06365513B1 Method of making a semiconductor device including testing before thinning the semiconductor substrate 有权
标题翻译：制造半导体器件的方法包括在稀薄半导体衬底之前的测试
公开(公告)号：US06365513B1
公开(公告)日：2002-04-02
申请号：US09162232
申请日：1998-09-29
申请人： Hidetoshi Furukawa , Atsushi Noma , Tsuyoshi Tanaka , Hidetoshi Ishida , Daisuke Ueda
发明人： Hidetoshi Furukawa , Atsushi Noma , Tsuyoshi Tanaka , Hidetoshi Ishida , Daisuke Ueda
IPC分类号： H01L2166
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A via hole having a bottom is formed in a substrate and then a conductor layer is formed at least over a sidewall of the via hole. Thereafter, the substrate is thinned by removing a portion of the substrate opposite to another portion of the substrate in which the via hole is formed such that the conductor layer is exposed.
摘要翻译：在衬底中形成具有底部的通孔，然后在通孔的至少一个侧壁上形成导体层。此后，通过去除衬底的与形成通孔的衬底的另一部分相对的部分使得导体层暴露而使衬底变薄。

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